用遗传算法优化铜激光放电电路的LC参量

将遗传算法应用于铜蒸气激光(CVLs)计算机动力学模型,以最大输出激光功率为目标函数,优化了CVLs放电电路的LC参量.优化后,储能电容为726nF(实验选8nF,储能电容与峰化电容之比为108(实验选3∶1),两等效电感之比为4∶1(实验选2∶1).优化后激光输出功率增加了15%. 关键词：     

铜蒸气激光脉冲终止机理的数值研究

建立了一个反映纵向脉冲放电激励铜蒸气激光动力学过程的自洽物理模型并进行了数值求解. 根据模拟结果深入分析了铜蒸气激光脉冲的终止机理，表明受激辐射跃迁、激光下能级的电子碰撞激发和激光上能级的铜原子经电子碰撞被抽运到更高激发能级这三个过程，是导致激光脉冲终止的重要因素. 关键词： 铜蒸气激光 激光脉冲终止机制 电子碰撞 更高激发能级     

百瓦级铜蒸汽激光器最大功率的全局优化设计

将全局优化的遗传算法应用于百瓦级铜蒸汽激光器（CVL）,以最大输出激光功率为目标函数,整体优化设计和确定了铜蒸汽激光器同轴结构的激光和放电电源的电路参数等。提高激光功率的一条途径是：在采用相对较小的储能电容的同时,提高输入功率（主要是峰值电压）和管壁温度,且使激光头与供电电源相匹配。     

大口径铜蒸气激光器的动力学分析

通过建立调整大口径铜蒸气激光器的动力学模拟过程中的有关动力学参数,得到一适用于不同输出功率的大口径铜蒸气激光器动力学模型.在此基础上对大口径铜蒸气激光器的径向动力学参量进行了计算,包括激励电场和亚稳态铜粒子密度等动力学参量的径向分布.给出了大口径铜蒸气激光器的径向电子温度及发光强度分布.尔后得到在不同充电电压及缓冲气压条件下铜蒸气激光器的输出功率,此程序对Φ=65cm的大口径铜蒸气激光器的计算结果与实验符合得相当好. 关键词：     

铜蒸气激光器计算机辅助设计

 在已有的各种输出功率、激励条件参数和实际模拟程序基础上,对铜蒸气激光器计算机辅助设计进行改进,获得了适合于宽广参数条件下的模拟程序及实用曲线组。可在一定的激光输出功率条件下确定器件的激活体积;当口径选定后,可得铜蒸气激光器对应的电功率输入密度、激励电场、最佳重复频率和放电管壁温度值。     

光泵铯蒸气激光的动力学模型

建立了一个物理模型描述了光泵铯蒸气激光的动力学过程和激光机理.结合实验参量,经数值求解该模型,定量分析了抽运光参量、缓冲气压和输出镜反射率等对激光输出功率和光光效率产生的影响,得到了与实验基本一致的模拟结果.表明该模型较好地反映了光泵銫蒸气激光的动力学机理和发射过程,为该类激光的优化设计提供了借鉴和参考.     

铜蒸气激光器计算机辅助设计

在已有的各种输出功率、激励条件参数和实际模拟程序基础上,对铜蒸气激光器计算机辅助设计进行改进,获得了适合于宽广参数条件下的模拟程序及实用曲线组。可在一定的激光输出功率条件下确定器件的激活体积;当口径选定后,可得铜蒸气激光器对应的电功率输入密度、激励电场、最佳重复频率和放电管壁温度值。     

铜蒸气激光器等离子体阻抗动态特性研究

 给出了铜蒸气激光器放电电路各参数的表达式及取值。与铜蒸气激光器动力学模型相结合,讨论了铜蒸气激光器动力学过程中由于放电管内等离子体参数的变化引起等离子体阻抗动态演变过程,并与采用固定等离子体参数的等离子体阻抗进行了比较。     

优化封离型CO2激光工作气体的动力学机理研究

详细讨论了封离型CO2激光器中CO2,N2和He三混合气体含量被优化组合后的激光动力学机理.气体优化可以提高激光输出功率的主要机理是通过适当增加N2含量,使N2激发态与CO2激光上能级的碰撞频率增加,提高了激光能级粒子数密度和相对布居数.同时,适当减少CO2含量,使总的电子动量输运碰撞频率减小、放电电流增大,导致增加激光上转动能级的弛豫速率和减小能级寿命,从而提高了谐振腔内的激光饱和光强.     

大口径铜蒸气激光“黑心”的优化消除

应用遗传算法,以激光束径向光强无“黑心”的最大输出功率为目标函数,整体优化设计了百瓦量级铜蒸气激光系统的激光头以及放电电路.脉冲放电电场的趋肤效应导致“黑心”, 但可通过选择合适的激光管半径、长度以及LC电路参数等,来消除或改善“黑心”现象.同 时,激光功率也可大幅度提高. 关键词： 铜蒸气激光 黑心 遗传算法 优化     

Finger capacitance of a terahertz photomixer in low-temperature-grown GaAs using the finite element method

Interdigitated finger capacitance of a continuous-wave terahertz photomixer is calculated using the finite element method.For the frequently used electrode width(0.2 μm) and gap width(1.8 μm),the finger capacitance increases quasi-quadratically with the number of electrodes increasing.The quasi-quadratic dependence can be explained by a sequence of lumped capacitors connected in parallel.For a photomixer composed of 10 electrodes and 9 photoconductive gaps,the finger capacitance increases as the gap width increases at a small electrode width,and follows the reverse trend at a large electrode width.For a constant electrode width,the finger capacitance first decreases and then slightly increases as the gap broadens until the smallest finger capacitance is formed.We also investigate the finger capacitances at different electrode and gap configurations with the 8 μm× 8 μm photomixer commonly used in previous studies.These calculations lead to a better understanding of the finger capacitance affected by the finger parameters,and should lead to terahertz photomixer optimization.     

非简谐振动对石墨烯量子电容和热稳定性的影响

采用固体物理理论和方法,研究了单层石墨烯的量子电容和它的温度稳定性随温度和电压的变化规律,探讨原子非简谐振动对它的影响.结果表明:(1)当电压一定时,单层石墨烯的量子电容和温度稳定性系数均随温度升高发生非线性变化,电压小于2.3 V时,量子电容随温度升高而增大,温度稳定性系数随温度升高由缓慢变化到很快增大,电压高于2.3 V时,量子电容随温度升高先增大后减小,而其温度稳定性系数随温度升高由缓慢变化到很快减小.温度一定时,量子电容只在电压值为0.4～2.8 V范围内才变化较小,而电压值大于2.8 V时,量子电容迅速减小并趋于0;(2)与简谐近似相比,非简谐项会使石墨烯量子电容有所增大,且温度愈高,两者的差愈大,非简谐效应愈显著,温度为300 K时,非简谐的量子电容要比简谐近似的值大0.33%,而温度为1 000 K时,差值增大到1.47%;(3)电压在1.5～1.8 V之间,而温度低于800 K时,石墨烯量子电容的温度稳定性系数最小且不随温度而变,储能性能的温度稳定性最好;(4)非简谐项会使它的量子电容热稳定性系数比简谐近似的值增大,且增大的情况与温度有关,当温度为400 K时量子电容热...     

Conductance oscillations and transport spectroscopy of a quantum dot

Results are reported for low temperature measurements of the conductance through small regions of a two-dimensional electron gas (2 DEG). An unconventional GaAs heterostructure is used to form a 2 DEG whose density can be tuned by the gate voltage applied to its conductive substrate. Electron beam lithography is used to pattern a narrow channel in the 2 DEG interrupted by two constrictions, defining a small 2 DEG island between them. The conductance is found to oscillate periodically with the gate voltage, namely with electron density. Calculations of the capacitance between the substrate and the island show that the period of oscillation corresponds to adding one electron to the island. The oscillatory behavior results primarily from the discreteness of charge and the Coulomb interaction between electrons. However, the observed temperature dependence of these oscillations requires a more sophisticated treatment which includes the quantized electron energy levels as well. The magnetic field dependence of the oscillations allows us to extract the discrete energy spectrum of the quantum dot in the quantum-Hall regime.     

Nonclassical behavior in the capacitance of a nanojunction

The capacitance of a nanojunction formed by a scanning tunneling microscope (STM) tip and a two-dimensional gold cluster was measured through the single electron tunneling spectroscopy of a double-barrier tunnel junction. By decreasing the STM tip-cluster separation, it was observed that the capacitance first increases and then decreases at short separation. This characteristic clearly deviates from the classical behavior and provides evidence for potential quantum effects on the capacitance.     

锂离子电池Sn-Al薄膜电极的制备及电化学性能研究

采用磁控溅射沉积技术制备了纳米级Sn-Al合金薄膜电极材料,并用X射线衍射和扫描电子显微镜进行表征,用高精度电池测试系统进行充放电和循环伏安测试.结果表明直流DC与射频RF两种不同的溅射方法制备的Sn-Al薄膜电极具有很大的性能差异,前者DC法制备的材料颗粒细小,表现出稳定的循环性能,其首次放电容量为1060 mAh/g,首次效率为71.7％,电极经过50次循环后比容量保持在700 mAh/g以上.后者RF法制备的材料颗粒较大,放电比容量开始上升,第五次循环后接着逐渐衰减,表现出较差的循环性能. 关键词： 锂离子电池 磁控溅射 Sn-Al合金 电化学性能     

行波管电子枪热分析与结构优化设计

利用ANSYS软件建立某Ka波段行波管2 mm阴极电子枪的有限元模型,并进行稳态及瞬态热分析,提取热流矢量图与温度分布图,得到阴极稳态时的温度分布及预热时间。对电子枪样品进行实验测试,得到的实测温度与模拟温度相差2%,因而在误差允许的范围内有限元方法是可行的。根据热流矢量图对热屏蔽筒进行结构优化,优化后,阴极温度比优化前提高了28 ℃,整枪最高温度提高了27 ℃,阴极预热时间缩短了40 s,缩短幅度达到33％。优化后的结构较大程度地提高了阴极的快启动性能,提升了行波管的快速反应能力。     

双异质结AlxGa1-xAs/GaAs发光管中与氧有关能级的测量

用DLTS和单次脉冲瞬态电容技术研究了液相外延生长的双异质结AlxGa1-xAs/GaAs发光管,掺Si的n-Al0.05Ga0.95As有源层中的深能级。着重分析了一个与氧有关的电子陷阱,其发射激活能为EC-ED=0.29eV。我们发现该电子陷阱随正向注入脉冲宽度tp的增加DLTS峰向低温移动,即在确定的温度下发射率随tp的增加而增加。用DLTS首次测得该能级的俘获瞬态谱,发现俘获峰随反向撤空脉冲宽度tR的增加向低温端移动,即在确定的温度下俘获率随tR的增加而增加,并且俘获激活能从△Eσ=0.28eV变化到0.26eV,用位形坐标图讨论了引起变化的原因。     

On the low temperature anomalies in the properties of the electrochemical interface. A non-local free-energy density functional approach

The restricted primitive model has proved to be a useful system to describe the behaviour of electrical double layers. In this model, ions are represented by charged hard spheres of equal diameter and the solvent is represented by a uniform dielectric constant. Classical Gouy-Chapman's theory, and its modification by Stern, always predicts a monotonically decreasing capacitance for this system when the fluid's temperature is increased. Similar results are given by the mean spherical approximation. These predictions are in qualitative agreement with experiment for dissolved electrolytes, but disagree with molten salt experiments where capacitance increases with temperature. Additionally, recent Monte Carlo (MC) simulations for this model show that at very low temperatures, the capacitance of the interface, near its point of zero charge, increases with increasing temperature for both diluted and highly concentrated salts. In this work we apply a particular model of a non-local free-energy density functional theory to study the capacitance of the electrical interface. In our calculations we considered symmetrical 1:1 systems for both diluted electrolytes and highly concentrated salts at very low electrode surface charge. Density functional theory agrees very well with MC results for capacitance at high temperature, but fails to predict a positive slope for this property at low temperatures. Comparison of theoretical density profiles with MC results allows the exploration of possible causes of failure.     

光频支格波对晶格热容的贡献

讨论晶格的光频支格波对晶格热容的贡献，得到了这部分的热容的表达式。在低温极限情况下,光频支格波对晶格热容的贡献很小，可以忽略，只有频率较低的声频支格波对晶格热容有重要贡献；在高温情况下，复式 和中光频支格波对晶格热容有重要贡献，高温情况下的结果与杜隆－珀蒂定律给出的经典数值一致，该定律在高温时与实际实验符合得很好。     

AlGaN/GaN高电子迁移率器件外部边缘电容的物理模型

AlGaN/GaN HEMT外部边缘电容Cofd是由栅极垂直侧壁与二维电子气水平壁之间的电场构成的等效电容.本文基于保角映射法对Cofd进行物理建模,考虑沟道长度调制效应,研究外部偏置、阈值电压漂移和温度变化对Cofd的影响:随着漏源偏压从零开始增加,Cofd先保持不变再开始衰减,其衰减速率随栅源偏压的增加而减缓;AlGaN势垒层中施主杂质浓度的减小和Al组分的减小都可引起阈值电压的正向漂移,正向阈值漂移会加强沟道长度调制效应对Cofd的影响,导致Cofd呈线性衰减.在大漏极偏压工作情况下,Cofd对器件工作温度的变化更加敏感.