微波辅助化学浴快速沉积Eu:YVO4薄膜

应用简单有效的微波辐射辅助化学浴技术快速沉积了Eu:YVO₄纳米颗粒膜. 所沉积的Eu:YVO₄薄膜均匀、密实、镜面. 产物用X射线衍射仪、原子力显微镜、紫外分光光度计和荧光分光光度计进行测试、表征和分析. 结果表明所得Eu:YVO₄薄膜由纳米颗粒组成, 具有高的(200)择优取向, 结晶性良好, 在紫外光激发下具有良好的荧光发射性能.     

化学浴沉积法制备高取向钒酸铋薄膜

Highly oriented BiVO₄ films were synthesized on glass substrates by modified chemical bath deposition (CBD). The influence of the deposition parameters as temperature and time of deposition on the rate of process and the quality of BiVO₄ films was studied by XRD, Raman Spectroscopy and SEM. The film deposited at 90 ℃ for 12 h was dense and uniform. The BiVO₄ thin film under this optimal depositing conditions was consisted of octagonal crystalline grains in a narrow size distribution with an average size of about 7 μm, showing a (004) preferential orientation.     

化学浴沉积cawo4薄膜的动力学

对化学浴沉积法制备的CaWO4薄膜进行了动力学研究。采用Avrami-Erofeev方程进行计算,得到反应温度40~80℃和反应溶液pH值为8~12条件下,CaWO4薄膜的动力学方程。结合实验分析各动力学参数的变化,发现反应温度越高,反应速率常数k越大,薄膜趋向于自发形核生长;反应溶液pH值越高,反应速率常数k显著减小,Avrami指数n则几乎不变。结果可见,pH值对反应速率的影响大,而对成核和生长方式影响小。pH值对反应速率的影响主要在于改变了Ca-EDTA螯合体的络合稳定性,进而影响整个反应的进行速度。通过动力学研究可以明确反映反应参数对薄膜生长的影响,体现了薄膜生长过程的本质,有助于达到有效控制反应过程的目的。     

基于内滤效应的YVO4∶Eu荧光纳米探针测定色氨酸

采用溶剂热法合成了发光性能和水溶性良好的YVO4∶Eu纳米探针(YVO4∶Eu NPs).由于YVO4∶Eu NPs的激发光谱与色氨酸的吸收光谱有很大程度的重叠,二者可发生荧光内滤效应,其中色氨酸为吸光体、YVO4∶Eu NPs为荧光体,YVO4∶Eu NPs的发光被猝灭.基于此,建立了基于YVO4∶Eu NPs内滤效应测定色氨酸含量的方法.对YVO4∶Eu NPs的加入量、反应溶液pH值和反应时间进行了优化,在最佳反应条件下,本方法测定色氨酸的线性范围为4.0×10-6~4.0×10-4 mol/L,检出限为1.0 ×10-6 mol/L(3σ).采用本方法测定了酱油中色氨酸的含量,回收率为95.2%和97.3%.本方法具有简便快速、灵敏准确的特点.     

YVO4:Eu发光材料的合成、结构与荧光性——推荐一个大学综合实验

This comprehensive experiment is recommended for the synthesis, structure and fluorescence properties of YVO₄:Eu photoluminescent materials. The main purpose of this experiment is to introduce the research of fluorescent materials, including the synthesis of materials, structure characterization and fluorescence measurement. Students can master the basic principle and operation of instruments, the method for material synthesis, and luminescence properties of the materials. While mastering the basic theory and the basic experimental skills, the experimental ability and creative consciousness, especially their ability to use knowledge comprehensively, can be cultivated and improved. The distance between teaching and scientific research is shortened.     

NaGdF4:Eu3+/AAO薄膜的制备与表征

采用水热法在多孔阳极氧化铝(AAO)模板上制备了NaGdF<,4>:Eu<'3+>(摩尔分数5.0%)/AAO薄膜,并研究了制备方法、溶液浓度和退火温度对薄膜样品形貌、结构和发光性质的影响.XRD结果表明,在低于500 ℃退火,得到具有NaGdF<,4>六方相结构的NaGdF<,4>:Eu<'3+>/AAO薄膜;而在5...     

超声搅拌化学浴沉积法制备大颗粒和致密的CdS薄膜

采用超声搅拌化学浴法(UCBD)在SnO2:F透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40min时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180nm,膜厚为80.8nm,适合作为薄膜太阳电池的窗口层.     

Defects in Tm^3＋／Yb3＋—doped YVO4 Crystals

<正>The microscopic defects have been investigated for crystal Tm3+/Yb3+:YVO4. These defects mainly include the inclusions (solid inclusions, bubbles and inclusions of the liquid phase), dendrites and growth stripes. They are caused by in-pure raw materials, unstable growth conditions, super-cooling component and so on. Tm3+/Yb3+:YVO4 crystals of large size and excellent optical quality are grown by improving the growth conditions to eliminate these defects.     

电沉积-烧结法制备Y2O3:Eu 荧光薄膜的研究

平板显示是显示技术发展的方向,发光材料的薄膜化是显示技术发展的重要研究对象.本研究采用电沉积-烧结方法制备出了氧化钇铕红色荧光薄膜.在0.1 mol/L硝酸钇溶液中加入4%(摩尔分数)0.1 mol/L硝酸铕掺杂,用三电极体系进行阴极电沉积,工作电极的电位为-1.2 V(相对于Ag/AgCl电极),温度65℃,沉积时间为400 s,500℃灼烧2 h,制备出的发光薄膜与高温固相法制备的薄膜对比,其发射光谱的峰位相同.XRD检测显示经不同温度灼烧后,随温度的升高,氧化钇晶相逐渐完整.经SEM扫描,薄膜沉积均匀平整.     

柠檬酸浓度对化学浴沉积硫化铟薄膜形成机理的影响研究

以柠檬酸为配位剂,在酸性条件下采用化学浴沉积方法在FTO玻璃衬底上制得硫化铟薄膜,分别采用XRD、SEM、UV等手段对薄膜相结构、形貌和薄膜的透光率进行了表征。结果表明薄膜为立方结构的β-In2S3,薄膜均一连续,呈网状表面形貌,透光率随厚度增加而递减,带隙宽度介于2.5～2.6 eV之间。主要研究了配位剂的浓度对薄膜形成机理的影响,结果表明:柠檬酸浓度较低时,柠檬酸根与铟离子的配位平衡是整个反应的速控步骤;当柠檬酸浓度较高时,硫代乙酰胺与酸作用生成硫离子的反应是整个反应的速控步骤。     

水浴法制备CdS薄膜产生的本征缺陷对光电学性质的影响

采用化学水浴沉积法(CBD)在钠钙玻璃衬底上制备硫化镉(CdS)薄膜,研究不同硫酸镉(CdSO_4)浓度下产生的本征缺陷对CdS薄膜光电学性质的影响。采用光致发光光谱、紫外-可见分光光度计及霍尔效应测试系统对薄膜的本征缺陷、光学及电学性质进行分析,发现CdS薄膜主要存在镉间隙(Cdi)及硫空位(VS)等本征缺陷,且VS随CdSO_4浓度的降低而逐渐减少。同时,VS缺陷的减少有利于薄膜透过率的提高,但在一定程度上降低了薄膜的电导率。根据透过率及其相关公式可知,半导体材料中透过率与电导率成e指数反比关系,适当减小薄膜的电导率可以使其透过率得到大幅度的提高,理论解释与实验结果相一致。     

Preparation and Characterization of CuInS2 Thin Films for Solar Cells by Chemical Bath Deposition

Introduction Recent years, chalcopyrite semiconductors have been successfully applied as absorber layers for polycrystalline thin-film solar cells. Among the ternary compound semiconductors, CuInS2 thin films with a direct bandgap of about 1.50 eV and a large absorption coefficient in the range of 104-105cm-1[1] are one kind of the most promising optical absorbers for high efficiency thin film solar cells.To date, CuInS2-based solar cells have shown conversion efficiency of about 12. 5%[2]. They exhibit long-term stability without any signs of degradation.     

Chemical Solution Deposition of ZnO Thin Films by an Aqueous Solution Gel Precursor Route

An aqueous chemical solution deposition method was used to prepare thin films of ZnO on SiO₂/Si (1 1 1) substrates. Starting from an aqueous solution of Zn acetate, citric acid and ammonia, very thin films could be deposited by spin coating. Heating parameters, necessary for thin film annealing, were determined using FTIR experiments on dried gel precursors, heated up to different temperatures. The morphology and the thickness of the films were investigated by SEM. It is found that homogeneous thin films with grain sizes of about 20 nm are formed. XRD experiments show that there is an indication that the films, crystallized at 500°C, exhibit preferential grain growth along the c-axis.