The study of HgCdTe MBE-grown structure with ion milling

Of many techniques used to characterize quality of HgCdTe, ion milling is emerging as a unique means to reveal electrically active and neutral defects and complexes. Ion milling is capable of strongly affecting electrical properties of HgCdTe, up to conductivity type conversion in p-type material. It appears, that strongly non-equilibrium processes which take place under ion milling, when material is oversaturated with mercury interstitial atoms generated near a surface, lead to formation of specific defect complexes, which may not form under other type of treatment. By measuring parameters of a crystal before and after milling, and following disintegration of defects with time after ion milling (’relaxation’), one can detect and identify these defects. This method was applied to analyse different samples grown by molecular beam epitaxy.     

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10¹⁵ cm^?3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.     

Electrical properties of HgCdTe films grown by MOCVD and doped with as

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2–5)×10¹⁵ cm^?3, and the presence of some unidentified defects.     

Optical breakdown threshold in the electron-thermal model of defect generation

An investigation is made of the conditions for the nucleation of optical breakdown in transparent material when recombination-stimulated defect-formation reactions occur in it. It is shown that a positive feedback between the conduction electron concentration and point defects activates defect formation even if the medium is not heated. Under real conditions, where heating of the medium by the light is important, lowering of the activation barrier by thermal defect generation aided by conduction electrons results in optical breakdown of the medium at light intensities much lower than predicted in the classical “semiconductor” or “thermochemical” models of thermal breakdown. The analysis confirms that optical breakdown of transparent condensed media is due to electron-aided defect formation reactions over a broad range of illumination conditions. Zh. Tekh. Fiz. 67, 48–53 (May 1997)     

Thermally induced defect photoluminescence in hydrogenated amorphous silicon

The intrinsic defect photoluminescence of hydrogenated amorphous silicon (a-Si:H) films has been investigated at high intensities of optical pumping that lead to heating of the film. It has been revealed that, for short heating times, the intensity of the defect photoluminescence increases exponentially with an increase in the temperature with an activation energy of 0.85 eV, which is considerably higher than the activation energy (∼0.2 eV) determined from experiments on classical annealing. This and other experimental results on the temperature dependence of the intensity and kinetics of the defect photoluminescence have been explained in terms of the “hydrogen glass” model by thermally induced generation of intrinsic defects in amorphous silicon. The results of the calculations are in good agreement with the experimental data on the defect photoluminescence that reflects the formation and annihilation of defects for short heating times under optical excitation.     

Optical properties of indium nitride powder and films

Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼ 4·10¹⁹ cm⁻³ was 0.94 eV, and for InN films with electron concentrations ∼10¹⁸ cm⁻³ it was 0.7 eV. We have established that when the electron concentration is increased to 8·10¹⁹ cm⁻³, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. Report given at the Fifth Belorussian-Russian Seminar on Semiconductor Lasers and Systems Based on Semiconductor Lasers, June 1–5, 2005, Minsk, Belarus. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 86–89, January–February, 2006.     

Control of acceptor doping in MOCVD HgCdTe epilayers

The acceptor doping of mercury cadmium telluride (HgCdTe) layers grown by MOCVD are investigated. (111)HgCdTe layers were grown on (100)GaAs substrates at 350°C using horizontal reactor and interdiffused multilayer process (IMP). TDMAAs and AsH3 were alternatively used as effective p-type doping precursors. Incorporation and activation rates of arsenic have been studied. Over a wide range of Hg_1−xCd_xTe compositions (0.17 < x < 0.4), arsenic doping concentration in the range from 5×10¹⁵ cm⁻³ to 5×10¹⁷ cm⁻³ was obtained without postgrowth annealing. The electrical and chemical properties of epitaxial layers are specified by measurements of SIMS profiles, Hall effect and minority carrier lifetimes. It is confirmed that the Auger-7 mechanism has decisive influence on carrier lifetime in p-type HgCdTe epilayers.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

More progressive technology of GaSb single crystal growth

GaSb single crystals were grown by the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.8–1.0Ω cm) and free carrier concentration decreased to the value of (1–2) × 10¹⁶ cm⁻³ in comparison with the crystals grown under molecular hydrogen atmosphere. A certain asymmetry in acceptor and donor passivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996.     

Ion transport and solid state battery studies on a new silver molybdate superionic glass system: x[0.75AgI: 0.25AgCl]: (1-x)[Ag2O: MoO3]

Preparation, material characterization, ion transport and battery discharge characteristic studies are reported for a new silver molybdate glass system: x[0.75AgI: 0.25AgCl]: (1-x)[Ag₂O: MoO₃], where 0<x<1 in molar weight fraction. The traditional host AgI has been replaced by an alternate compound: “a quenched [0.75AgI: 0.25 AgCl] mixed system/solid solution”. Electrical conductivity (σ), ionic mobility (μ) and mobile ion concentration (n) measurements were carried out as a function of “x”. The composition: 0.8[0.75AgI: 0.25AgCl]: 0.2[Ag₂O: MoO₃] exhibited the highest conductivity (∼ 6×10⁻³ S·cm⁻¹) at room temperature and has been referred to as ‘optimum conducting composition (OCC)’. The compositional variation of “μ” and “n” revealed that the enhancement in the room temperature conductivity of OCC is predominantly due to the increase in mobile ion concentration. The XRD and DSC analysis on OCC indicated the formation of glassy phase with partial presence of unreacted polycrystalline phase of the host salt. The temperature dependence of various ionic transport parameters viz. “σ”, “μ”, “n” and ionic transference number (t_ion) were carried out on the OCC and the results have been discussed on the basis of theoretical models suggested for superionic glasses. In addition to this, solid state batteries were fabricated using OCC as electrolyte and discharge characteristics were studied under varying load conditions.     

Ion etching of HgCdTe: Properties,patterns and use as a method for defect studies

Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible for modification of these properties under the etching. Possibilities are discussed that ion etching opens for defect studies in HgCdTe, including detecting electrically neutral tellurium nanocomplexes, determining background donor concentration in the material of various origins, and understanding the mechanism of arsenic incorporation in molecular-beam epitaxy-grown films.     

Hedgehog production in spatially correlated noise

The production of topological defects during a quench in a φ⁴ model is investigated. The influence of a spatially correlated noise on defect production in two and three dimensions is demonstrated. Received 28 August 2001 / Received in final form 11 February 2002 Published online 2 October 2002 RID="a" ID="a"Paper supported in part by ESF “COSLAB” Programme RID="b" ID="b"e-mail: sfdobrow@kinga.cyf-kr.edu.pl     

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

High-quality GaN thin films are grown by rf-plasma assisted molecular beam epitaxy. The quality of the GaN epitaxial layer is significantly improved by using an intermediate-temperature GaN buffer layer (ITBL) in addition to a conventional 20-nm-thick low-temperature buffer layer. The GaN epitaxial layers demonstrate systematic improvements in the electron mobility increasing from 82 cm² V^-1 s^-1, for films grown with just the low-temperature buffer layer, to about 380 cm² V^-1 s^-1 for films grown with an ITBL of thickness 800 nm. The photoluminescence also indicates systematic improvements in the intensity and the full-width-half-maximum with the use of ITBL. Photoreflectance spectra are measured from the GaN films. Detailed analyses of the excitonic transition energy demonstrate that the residual strain relaxes rapidly with the use of ITBL, which is attributed to the observed improvements in the mobility and the PL spectra. Received: 30 November 2000 / Accepted: 4 December 2000 / Published online: 9 February 2001     

Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23)

Voltage, frequency, and temperature dependences of photo-emf are experimentally studied in the MIS HgCdTe/SiO ₂ /Si ₃ N ₄ and HgCdTe/AOF structures. The MIS structures were produced on the basis of graded-bandgap Hg _1−x Cd _x Te films grown by molecular-beam epitaxy on GaAs substrates. It is found that the subsurface graded-band-gap layers do affect the photoelectrical characteristics of MIS structures. The mechanisms limiting the differential resistance in the space-charge region at various temperatures are revealed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 70–80, October, 2006.     

Properties of the oxygen vacancy in ZnO

As-grown ZnO bulk crystals and crystals annealed in vacuum, oxygen, or zinc vapour were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga and oxygen vacancies (V_O) in the material. Annealing the samples in O₂ at about 1000 °C (2 atm, 20 h) reduces the H and V_O donor concentration by typically one order of magnitude. The photoluminescence and deep level transient spectroscopy (DLTS) results suggest a correlation between the broad unstructured emission at 2.45 eV (“green band”) and a donor level 530 meV below the conduction band, it is attributed to the V_O ^0/++transition. By using DLTS experiments with optical excitation it is possible to observe a metastable level 140 meV below the conduction band which is assigned to the V_O ^2+/+ recharging. The results give evidence for the “negative-U” properties of the oxygen vacancy defects predicted by recent theoretical calculations. PACS 71.55.Gs; 72.20.Jv; 76.30.Mi; 76.70.Hb; 78.55.Et     

Nuclear magnetic relaxation in ferrimagnetic Y3Fe5−x SixO12 films

The effect of silicon impurities on the damping of spin-echo signals from the ⁵⁷Fe nuclei of tetrahedral Fe³⁺ ions in epitaxial yttrium-iron-garnet films was investigated. It was found that for silicon concentrations 0.015⩽x⩽0.037 the damping of the spin echo is a two-component process, which made it possible to separate nuclei into two types, differing by both the longitudinal and transverse magnetic relaxation times. For silicon concentrations 0.044⩽x⩽0.073 the decay of the echo can be described by one exponential and all nuclei in the sample have the same transverse relaxation times and the same longitudinal relaxation times. The experimental results are interpreted on the basis of the supposition that impurity “macromolecules” form around the Si⁴⁺ ions. The relaxation times of the iron nuclei in a “macromolecule” are much shorter than the relaxation times of iron nuclei belonging to the matrix ions. The radius of a “macromolecule” is estimated on the basis of percolation theory. Fiz. Tverd. Tela (St. Petersburg) 40, 1494–1497 (August 1998)     

Filtered thermal contrast based technique for testing of material by infrared thermography

A new kind of thermal contrast, called “filtered contrast” is presented, which allows detecting and characterizing material defects using active thermography under some assumptions on physical and thermal parameters of materials. In opposition to known definitions of the thermal contrast, knowledge about defect-free area is not necessary and this contrast is less sensitive to nonuniformity of heat disposal to the material surface. The measurements were performed on an experimental setup equipped with a ThermaCAM PM 595 infrared camera and frame grabber. The step heating was chosen as heat excitation. The results demonstrate usefulness of the 1D model of heat transfer used for determination of depth of subsurface defects. The influence of the parameter of the smoothing filter, required for filtered contrast implementation, thermal parameters of the tested material and defect on expanded uncertainty of determination of defect depth is also presented. Due to significant complexity of the model of heat transfer, the conditions for the “law of propagation of uncertainty” were not fulfilled and a numerical method, i.e., Monte Carlo simulation is applied for the propagation of distributions.     

The electrical characteristics of MBE n-Hg1–xCdxTe (x?=?0.29–0.31) MIS structures with sharp inhomogeneities in composition

The effect of regions with periodic sharp 48–54 nm thick inhomogeneities in composition on the electrophysical characteristics of MIS structures based on graded-gap n-Hg_1–x Cd _x Te (x = 0.29–0.31) grown by molecular-beam epitaxy is studied. It is found that major electro-physical and photo-electrical characteristics are qualitatively similar for MIS structures based on n-Hg_1–x Cd _x Te with sharp inhomogeneities in composition (barriers) and without “barriers”. It is shown that the electrical characteristics are mostly affected by the “barrier regions” located close to the insulator – semiconductor interface. This effect is manifested in an increase of the effective dielectric thickness, which can be due to the fact that the regions of enhanced composition form potential barriers for electrons, and in a decrease in the relaxation time of non-equilibrium carriers due to recombination at the boundaries of the regions with sharp changes in composition.     

Investigation of electrical and optical properties of ZnO thin films grown with O<Subscript>2</Subscript>/O<Subscript>3</Subscript> gas mixture

The electrical and optical properties of ZnO thin films grown with an O₂/O₃ gas mixture are compared with samples grown with pure oxygen gas. The ZnO films were grown on sapphire(0001) by pulsed laser deposition. The residual background carrier concentration is reduced by using an O₂/O₃ gas mixture as compared to pure molecular oxygen. In particular, a one order of magnitude reduction in residual background carrier density (6.15×10¹⁶ cm^-3) is achieved by using an O₂/O₃ gas mixture. The lower donor defect density is attributed to the generation of acceptor defects compensating for the residual donor defects. Photoluminescence results show that the deep level emission increased and the band edge emission decreased for the ZnO films grown with ozone, as compared to the samples grown with pure oxygen gas. PACS 73.61.Ga; 78.55Et; 81.05 Dz; 81.15.Fg     

Epitaxial growth and spectroscopic investigation of BaSO4:Mn6+ layers

We report on the first layer growth of a Mn⁶⁺-doped material. Large-size BaSO₄ substrates of 10×6×4 mm³ were grown from a LiCl solvent by the flux method. Flat surfaces of undoped BaSO₄ were then achieved by use of liquid-phase epitaxy (LPE) from a CsCl–KCl–NaCl solvent. Finally, BaSO₄:Mn⁶⁺ layers were grown by LPE with growth velocities of approximately 3 μm h^-1, at temperatures of 550–508 °C. Absorption, luminescence, luminescence-excitation and luminescence-decay measurements confirmed the incorporation of manganese solely in its hexavalent oxidation state. This material possesses potential as a near-infrared tunable laser with a wavelength range larger than Ti:sapphire. Received: 7 January 2002 / Revised version: 30 March 2002 / Published online: 8 August 2002