Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Density-functional theory investigation of energy gaps and optical properties of Hg1-xCdxTe and In1-xGaxAs

We use a modified Becke-Johnson exchange plus a local density approximation correlation potential within the density functional theory to investigate the electronic structures of Hg_1-xCd_xTe and In_1-xGa_xAs with x being 0, 0.25, 0.5, 0.75, and 1. For both of the two series, our calculated energy gaps and dielectric functions (real part ε₁ and imaginary part ε₂) are in agreement with the corresponding experimental results with x being between 0 and 1. The calculated zero-frequency refractive index varies greatly with x for Hg_1-xCd_xTe, but changes little with x for In_1-xGa_xAs, which is consistent with the real parts of their dielectric functions. Therefore, this new approach is satisfactory to describe the electronic structures and the optical properties of the semiconductors.     

Stress relaxation in CdHgTe/CdTe heterostructures

Based on our analysis of the results of measurements of elastic deformation in Cd_xHg_1–xTe/CdTe heterostructures it is shown that the degree of relaxation of the crystal lattice for Cd_0.2Hg_0.8Te films 1 µm thick with a working temperature of 273 K is 0.8766, which supports the idea of almost full relaxation of the mismatch stress for such thicknesses of A₂B₆ films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 112–114, August, 1995.     

Sputter cleaning and dry oxidation of CdTe,HgTe, and Hg0.8Cd0.2Te surfaces

The analyses of CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces by XPS and LEED after Ar⁺ sputtering and after the subsequent onset of a dry oxidation are described, and a quantitative evaluation of the XPS spectra is attempted. The results are: Ar⁺ sputtering yields a perfect unreconstructed CdTe surface of stoichiometric composition, whereas the composition of sputtered HgTe and Hg_0.8Cd_0.2Te surfaces generally deviates from the stoichiometry of the respective compound. This deviation is a function of the energy of the Ar ions (1 to 15 keV) and is characterized by an increasing deficit in Hg as the ion energy is raised. The Hg deficit of sputtered Hg_0.8Cd_0.2Te surfaces is substitutionally compensated by an equivalent increase in Cd, and due to this substitution the resulting surfaces are sufficiently ordered to display a distinct LEED pattern. The oxidation of sputtered CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces in an O₂ atmosphere is an extremely slow process. Therefore, the surfaces to be oxidized were additionally exposed to UV radiation (low pressure mercury lamp), and due to UV generated ozone as an oxidizing agent ultrathin native oxide layers of up to 15 Å thickness were readily obtained. The predominant constituents of these native oxide layers on Hg_0.8Cd_0.2Te are concluded to be CdTeO₃ and TeO₂.     

CdTe/HgCdTe indium-diffused photodiodes

CdTe/HgCdTe structures have been prepared by MBE deposition of high resistivity CdTe on bulk p-type Hg_1−xCd_xTe (x = 0.295). Diodes were produced by diffusion from indium dots evaporated on the CdTe surface. The I-V characteristics are diffusion-limited down to a temperature of 160K. The C-V characteristics indicate a built-in potential of 0.2 V. The diodes operate as photovoltaic detectors due to lateral collection around the diffused region, showing a spectral response between 0.9 and 5 μm. The lateral collection effect has been used to measure the minority carrier diffusion length in the HgCdTe substrate and calculate the theoretical saturation current as a function of temperature; good agreement with the experiment was found.     

Optical properties of Cd1−xZnxTe thin films fabricated through sputtering of compound semiconductors

Cd_1−xZn_xTe thin film fabrication is necessary for its photovoltaic and imaging applications in large scale. Thermally annealed and thereby interdiffused r.f. sputtered multilayers comprising of CdTe and ZnTe have been utilized here for the fabrication of Cd_1−xZn_xTe thin films. Photoluminescence and change of resistance of the multilayer under illumination were studied using different annealing temperatures and varying number of repetitions. It was found that three number of repetitions annealed at 300 °C exhibited the best results.     

Magnetic field dependence of the energy levels in CdTe-Cd(Mn)Te double quantum well structures

We show that if the valence band offset between CdTe and Cd_1-xMn_xTe alloys is not too large, magneto-photoluminescence experiments performed on CdTe-Cd_1-xMn_xTe-Cd_1-yMn_yTe double quantum wells should yield direct informations on this offset: the structure changes from a type I configuration (where electron and hole are mostly localized within CdTe layer) prevailing at zero magnetic field to a type II configuration (electron in CdTe layer, hole in Cd_1-yMn_yTe layer) at large magnetic field.     

Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures

The energy spectra of quantum-well narrow-bandgap Hg_{1 ? y} Cd _y Te/Cd _x Hg_{1 ? x} Te heterostructures have been studied. The dependences of the effective cyclotron mass on the density (in classical magnetic fields) and the transition energy (in quantizing fields) have been obtained from the cyclotron resonance measurements. These dependences confirm the near-linear dispersion law for the electrons with small mass at the band bottom (the minimum cyclotron mass measured is 0.003 m ₀). The interband photoconductivity of the CdHgTe-based structures with the long-wavelength photoresponse edge lower than 6 meV has been demonstrated.     

First-principles study of the structural,electronic and optical properties of the cubic triangular quaternary ZnxCdyHg1-x-yTe alloys under hydrostatic pressure

In the present computational study, we have explored the structural, electronic and optical properties of ZnTe, CdTe and HgTe binary compounds and their ternary alloys Zn_xCd_1-xTe, Zn_xHg_1-xTe and Cd_xHg_1-xTe as well as their ordered quaternary Zn_xCd_yHg_1-x-yTe alloys using the full potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory. We have numerically estimated the total energies, the lattice parameters, the bulk moduli and their first pressure derivative using the generalized gradient approximation (GGA). The band structure is computed using the modified Becke-Johnson (TB-mBJ) approximation. Results of our study show a nonlinear dependence of the composition on the lattice constant, bulk modulus and band gap for the binary and ternary compounds as well as for the quaternary alloys. Additionally, the dielectric function, the refractive index and the loss energy were also reported. The pressure effect on the band gap energy and optical properties were also investigated and reported. Our results are in good agreement with experimental values and theoretical data available in the literature.     

Hg1-xCdxTe的低频吸收带

本文对Hg_1-xCd_xTe的低频吸收带,提出另一种解释。把Hg_1-xCd_xTe作为具有0—25％Cd(或Hg)替位杂质的HgTe(或CdTe)晶体,用格林函数计算含有一个Cd(或Hg)的HgTe(或CdTe)双原子链振动谱,进而讨论Hg_1-xCd_xTe混晶振动模的特性,结果表明Hg_1-xCd_xTe在k→0存在频率不趋于零的声学声子,它们有条件吸收远红外波段的光子,形成低频吸收带。它能说明已报道的实验上观察到的低频吸收带的主要特征,并表明对光学声子存在双模行为的其它混晶,在远红外吸收谱中很可能存在类似的低频吸收带。 关键词：     

Quantum properties of two-dimensional electron gas in the inversion layer of Hg1−xCdxTe bicyrstals

The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg_1−xCd_xTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 10³ MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity the characteristics parameters of the electric subbands (subband populations n_si, subband energies E_F−E_i, effective electron masses m^*_ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg_1−xCd_xTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

Phonon deformation potentials of CdTe

Abstract

Single and multiple quantum wells (QWs) of CdTe/Cd_1?xZn_xTe, of different composition (x), grown on a Cd_1?xZn_xTe (001) substrate are studied by Raman spectroscopy at low temperature, under resonance conditions. Two of the three phonon deformation potentials (PDPs) of the LO phonon of CdTe are calculated using the observed phonon frequency shifts due to a lattice-misfit bisotropic strain.     

Sb掺杂Hg1-xCdxTe的光致发光

对不同Sb掺杂浓度Hg_1-xCd_xTe（x≈0.38）样品在3.9—115K的温度范围内进行了光致发光实验测量，观察到与局域激子、带到带和施主受主对有关的辐射复合过程．并用光致发光手段发现Sb掺杂在x≈0.38的Hg_1-xCd_xTe中引入的约30meV的受主能级 关键词：     

Ab-initio investigations of structural, electronic, magnetic and optical properties of ferromagnetic Cd1-xMnxTe

We report ab-initio calculations of the structural, electronic, magnetic and optical properties of the alloy Cd_1-xMn_xTe as a function of the Mn concentration ‘x’. Ab-initio calculations are based on the density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constants of the Cd_1-xMn_xTe alloys exhibit Vegard's law downward bowing parameter. For the minority spin channel the Fermi level shifts toward higher energy with the value of ‘x’ in Cd_1-xMn_xTe. The spin-exchange splitting energy Δ_x(d) increases with increasing ‘x’ in Cd_1-xMn_xTe and the values of p-d exchange splitting energy Δ_x(pd) of Cd_1-xMn_xTe show that the effective potential for the minority spin is more attractive than that for the majority spin. The values of exchange constants N₀α and N₀β obtained for Cd_1-xMn_xTe are in agreement with the reported data. The magnetic moment per Mn atom reduces from its free space charge value of 5μ_B to around 4μ_B due to p-d hybridization and this results into an appearance of small local magnetic moments on the non-magnetic Cd and Te sites. The absorption threshold shifts toward higher energy and the static refractive index decreases with the increasing value of ‘x’ in Cd_1-xMn_xTe.     

Valence band spin-orbit splitting in CdTe and Cdf−xMnxTe and giant zeeman effect in the Γ7 band of Cd1−xMnxTe

Optical transitions from spin-orbit split-off valence band Γ₇ to the conduction band Γ₆ were directly observed in transmission measurements on thin samples of CdTe and Cd_1?xMn_xTe. Precise values of spin-orbit splittings were determined. Giant Zeeman splitting of Γ₇ - Γ₆ exciton in Cd_1?xMn_xTe was observed and found coherent with corresponding splitting of Γ₈-Γ₆ exciton.     

Hydrostatic-pressure-induced degradation of MBE CdTe/CdMgTe heterostructures grown on GaAs substrate

Abstract

Modulation doped CdTe/Cd_1?xMg_xTe heterostructures grown on GaAs substrates were studied by means of magnetotransport measurements performed under hydrostatic pressure, as well as X-ray diffraction and cross-sectional transmission electron microscopy completed before and after pressure experiments. We have shown that hydrostatic pressure leads to the creation of dislocations in the CdTe/Cd_1?xMg_xTe structure in the vicinity of the interface between the II-VI structure and the substrate. The dislocation-enhanced internal stress leads to internal microfractures, resulting in a permanent damage of the heterostructure.     

Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices

Electronic and vibrational states in CdTe/ZnTe quantum dot superlattices are studied using optical spectroscopy techniques (photoluminescence in a wide temperature range, IR reflection, and Raman scattering). The effect of the ZnTe barrier layer thickness on the luminescence spectra of the structures is discussed. The luminescence from electronically coupled islands is assumed to be due to spatially indirect excitons because of the specific features of the CdTe/ZnTe heterostructure band structure. A combination of quantum-dot vibrational modes, which has not been observed earlier, is detected in the Raman spectra. Analysis of the lattice IR reflection spectra shows that, in the case of large barrier thicknesses between the quantum-dot planes, elastic stresses are concentrated in the Zn_1?xCd_xTe layers, whereas in structures with lower barrier thicknesses the elastic-strain distribution exhibits a more complicated pattern.     

Magnetic-field-induced change in optical transmission spectra of Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te epitaxial films

The optical transmission spectra of epitaxial Hg_{1 − x} Cd _x Te films with a gradient of the band gap have been studied experimentally. The possibility of transforming the spectra after exposure of the samples to a homogeneous magnetic field has been demonstrated. This effect is possibly caused by the dependence of the magnetization of the Hg_{1 − x} Cd _x Te films on the composition gradient of the solid solution.     

Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to −50 V) and the X-ray effective energy in the range 28–72 keV. It is shown that photovoltaic detectors based on CdTe with p-n junctions are superior to Cd_0.9Zn_0.1Te ones.