Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility

A new two‐dimensional (2D) layered material, namely, titanium trisulfide (TiS₃) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS₃ monolayer is a direct‐gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in‐plane electron mobility of the 2D TiS₃ is highly anisotropic, amounting to about 10 000 cm² V^?1 s^?1 in the b direction, which is higher than that of the MoS₂ monolayer, whereas the hole mobility is about two orders of magnitude lower. Furthermore, TiS₃ possesses lower cleavage energy than graphite, suggesting easy exfoliation for TiS₃. Both dynamical and thermal stability of the TiS₃ monolayer is examined by phonon‐spectrum calculation and Born–Oppenheimer molecular dynamics simulation. The desired electronic properties render the TiS₃ monolayer a promising 2D atomic‐layer material for applications in future nanoelectronics.     

Alkyl Monolayer Passivated Metal–Semiconductor Diodes: 2: Comparison with Native Silicon Oxide

To understand the electrical properties at passivated metal–semiconductor interfaces, two types of mercury–insulator–silicon (n‐type) junctions, Hg|C₁₀H₂₁? Si and Hg|SiO₂? Si, were fabricated and their current–voltage and capacitance–voltage characteristics compared. Both of them exhibited near‐ideal rectifying characteristics with an excellent saturation current at reverse bias, which is in contrast to the previously reported ohmic behavior of an unmodified mercury–silicon junction. The experimental results also indicated that the n‐decyl monolayer passivated junction possesses a higher effective barrier height, a lower ideality factor (that is, closer to unity), and better reproducibility than that of native silicon oxide. In addition, the dopant density and build‐in potential, extracted from capacitance–voltage measurements of these passivated mercury–silicon junctions, revealed that alkyl monolayer derivatization does not alter the intrinsic properties of the silicon substrate. The calculated surface state density at the alkyl monolayer|silicon interface is lower than that of the silicon oxide|silicon interface. The present study increases the possibility of using advanced organic materials as ultrathin insulator layers for miniaturized, silicon‐based microelectronic devices.     

Liquid‐Phase Epitaxial Growth of Two‐Dimensional Semiconductor Hetero‐nanostructures

Although many two‐dimensional (2D) hybrid nanostructures are being prepared, the engineering of epitaxial 2D semiconductor hetero‐nanostructures in the liquid phase still remains a challenge. The preparation of 2D semiconductor hetero‐nanostructures by epitaxial growth of metal sulfide nanocrystals, including CuS, ZnS and Ni₃S₂, is achieved on ultrathin TiS₂ nanosheets by a simple electrochemical approach by using the TiS₂ crystal and metal foils. Ultrathin CuS nanoplates that are 50–120 nm in size and have a triangular/hexagonal shape are epitaxially grown on TiS₂ nanosheets with perfect epitaxial alignment. ZnS and Ni₃S₂ nanoplates can be also epitaxially grown on TiS₂ nanosheets. As a proof‐of‐concept application, the obtained 2D CuS–TiS₂ composite is used as the anode in a lithium ion battery, which exhibits a high capacity and excellent cycling stability.     

Observation of Charge Separation and Space‐Charge Region in Single‐Crystal P3HT/C60 Heterojunction Nanowires

We directly observed charge separation and a space‐charge region in an organic single‐crystal p–n heterojunction nanowire, by means of scanning photocurrent microscopy. The axial p–n heterojunction nanowire had a well‐defined planar junction, consisted of P3HT (p‐type) and C₆₀ (n‐type) single crystals and was fabricated by means of the recently developed inkjet‐assisted nanotransfer printing technique. The depletion region formed at the p–n junction was directly observed by exploring the spatial distribution of photogenerated carriers along the heterojunction nanowire under various applied bias voltages. Our study provides a facile approach toward the precise characterization of charge transport in organic heterojunction systems as well as the design of efficient nanoscale organic optoelectronic devices.     

Graphitic Silicon Nitride: A Metal‐Free Ferromagnet with Charge and Spin Current Rectification

As a first example, herein we show that g‐Si₄N₃ is expected to act as a metal‐free ferromagnet featuring both charge and spin current rectification simultaneously. Such rectification is crucial for envisioning devices that contain both logic and memory functionality on a single chip. The spin coherent quantum‐transport calculations on g‐Si₄N₃ reveal that the chosen system is a unique molecular spin filter, the current‐voltage characteristics of which is asymmetric in nature, which can create a perfect background for synchronous charge and spin current rectification. To shed light on this highly unusual in‐silico observation, we have meticulously inspected the bias‐dependent modulation of the spin‐polarized eigenstates. The results indicate that, whereas only the localized 2p orbitals of the outer‐ring (OR) Si atoms participate in the transmission process in the positive bias, both OR Si and N atoms contribute in the reverse bias. Furthermore, we have evaluated the spin‐polarized electron‐transfer rate in the tunneling regime, and the results demonstrate that the transfer rates are unequal in the positive and negative bias range, leading to the possible realization of a simultaneous logic–memory device.     

TiS2 Monolayer as an Emerging Ultrathin Bifunctional Catalyst: Influence of Defects and Functionalization

We have envisaged the hydrogen evolution and oxygen evolution reactions (HER and OER) on a two-dimensional (2D) noble-metal-free titanium disulfide (TiS₂) monolayer, which belongs to the exciting family of transition metal dichalcogenides (TMDCs). Our theoretical investigation to probe the HER and OER on both the H and T phases of 2D TiS₂ is based on electronic-structure calculations witihin the framework of density functional theory (DFT). Since TiS₂ is the lightest compound among the group-IV TMDCs, it is worth exploring the catalytic activity of a TiS₂ monolayer through the functionalization at the anion (S) site, substituting with P, N, and C dopants as well as by incorporating single sulfur vacancy defects. We have investigated the effect of functionalization and vacancy defects on the structural, electronic, and optical response of a TiS₂ monolayer by determining the density of states, work-function, and optical absorption spectra. We have determined the HER and OER activities for the functionalized and defective TiS₂ monolayers based on the reaction coordinate, which can be constructed from the adsorption free energies of the intermediates (H*, O*, OH* and OOH*, where * denotes the adosrbed state) in the HER and OER mechanisms. Finally, we have shown that TiS₂ monolayers are emerging as a promising material for the HER and OER mechanisms under the influence of functionalization and defects.     

Visible‐Light‐Induced Generation of H2 by Nanocomposites of Few‐Layer TiS2 and TaS2 with CdS Nanoparticles

Graphene analogues of TaS₂ and TiS₂ (3–4 layers), prepared by Li intercalation followed by exfoliation in water, were characterized. Nanocomposites of CdS with few‐layer TiS₂ and TaS₂ were employed for the visible‐light‐induced H₂ evolution reaction (HER). Benzyl alcohol was used as the sacrificial electron donor, which was oxidized to benzaldehyde during the reaction. Few‐layer TiS₂ is a semiconductor with a band gap of 0.7 eV, and its nanocomposite with CdS showed an activity of 1000 μmol h^?1 g^?1_. The nanocomposite of few‐layer TaS₂, in contrast, gave rise to higher activity of 2320 μmol h^?1 g^?1, which was attributed to the metallic nature of few‐layer TaS₂. The amount of hydrogen evolved after 20 and 16 h for the CdS/TiS₂ and CdS/TaS₂ nanocomposites was 14833 and 28132 μmol, respectively, with turnover frequencies of 0.24 and 0.57 h^?1, respectively.     

Few‐Layer Nanosheets of n‐Type SnSe2

Layered p‐block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created sensation in thermoelectrics due to its ultralow thermal conductivity and high thermoelectric figure of merit. Tin diselenide (SnSe₂), an additional layered compound belonging to the Sn‐Se phase diagram, possesses a CdI₂‐type structure. However, synthesis of pure‐phase bulk SnSe₂ by a conventional solid‐state route is still remains challenging. A simple solution‐based low‐temperature synthesis is presented of ultrathin (3–5 nm) few layers (4–6 layers) nanosheets of Cl‐doped SnSe₂, which possess n‐type carrier concentration of 2×10¹⁸ cm^?3 with carrier mobility of about 30 cm² V^?1 s^?1 at room temperature. SnSe₂ has a band gap of about 1.6 eV and semiconducting electronic transport in the 300–630 K range. An ultralow thermal conductivity of about 0.67 Wm^?1 K^?1 was achieved at room temperature in a hot‐pressed dense pellet of Cl‐doped SnSe₂ nanosheets due to the anisotropic layered structure, which gives rise to effective phonon scattering.     

CuO–ZnO Micro/Nanoporous Array‐Film‐Based Chemosensors: New Sensing Properties to H2S

CuO–ZnO micro/nanoporous array‐films are synthesized by transferring a solution‐dipped self‐organized colloidal template onto a device substrate and sequent heat treatment. Their morphologies and structures are characterized by X‐ray diffraction, field‐emission scanning electron microscopy, transmission electron microscopy, and X‐ray photoelectron spectrum analysis. Based on the sensing measurement, it is found that the CuO–ZnO films prepared with the composition of [Cu²⁺]/[Zn²⁺]=0.005, 0.01, and 0.05 all show a nice sensitivity to 10 ppm H₂S. Interestingly, three different zones exist in the patterns of gas responses versus H₂S concentrations: a platform zone, a rapidly increasing zone, and a slowly increasing zone. Further experiments show that the hybrid CuO–ZnO porous film sensor exhibits shorter recovery time and better selectivity to H₂S gas against other interfering gases at a concentration of 10 ppm. These new sensing properties may be due to a depletion layer induced by p–n junction between p‐type CuO and n‐type ZnO and high chemical activity of CuO to H₂S. This work will provide a new construction route of ZnO‐based sensing materials, which can be used as H₂S sensors with high performances.     

Utilizing the Space‐Charge Region of the FeNi‐LDH/CoP p‐n Junction to Promote Performance in Oxygen Evolution Electrocatalysis

The modulation of electron density is an effective option for efficient alternative electrocatalysts. Here, p‐n junctions are constructed in 3D free‐standing FeNi‐LDH/CoP/carbon cloth (CC) electrode (LDH=layered double hydroxide). The positively charged FeNi‐LDH in the space‐charge region can significantly boost oxygen evolution reaction. Therefore, the j at 1.485 V (vs. RHE) of FeNi‐LDH/CoP/CC achieves ca. 10‐fold and ca. 100‐fold increases compared to those of FeNi‐LDH/CC and CoP/CC, respectively. Density functional theory calculation reveals OH^? has a stronger trend to adsorb on the surface of FeNi‐LDH side in the p‐n junction compared to individual FeNi‐LDH further verifying the synergistic effect in the p‐n junction. Additionally, it represents excellent activity toward water splitting. The utilization of heterojunctions would open up an entirely new possibility to purposefully regulate the electronic structure of active sites and promote their catalytic activities.     

Hysteretic Four‐Step Spin Crossover within a Three‐Dimensional Porous Hofmann‐like Material

Materials that display multiple stepped spin crossover (SCO) transitions with accompanying hysteresis present the opportunity for ternary, quaternary, and quinary electronic switching and data storage but are rare in existence. Herein, we present the first report of a four‐step hysteretic SCO framework. Single‐crystal structure analysis of a porous 3D Hofmann‐like material showed long‐range ordering of spin states: HS, HS_0.67LS_0.33, HS_0.5LS_0.5, HS_0.33LS_0.67, and LS. These detailed structural studies provide insight into how multistep SCO materials can be rationally designed through control of host–host and host–guest interactions.     

Immiscible polymers in double spin‐coated electroluminescent devices containing phenyl‐substituted tris(8‐hydroxyquinoline)aluminum derivatives soluble in a host polymer

Three new phenyl‐substituted tris(8‐hydroxyquinoline)aluminum (AlQ₃) derivatives have been synthesized: tris(5‐phenyl‐8‐quinolinolate‐N1,O8)aluminum, tris(5,7‐diphenyl‐8‐quinolinolate‐N1,O8)aluminum, and tris[5,7‐bis(p‐fluorophenyl)‐8‐quinolinolate‐N1,O8]aluminum. These AlQ₃ derivatives are easily soluble in common organic solvents and form solid‐phase solutions in a poly(aryl ether ketone) host polymer (A435). These interesting properties allow the use of soluble AlQ₃ derivatives in double spin‐coated organic light‐emitting devices of the type ITO/NPB‐QP/A435 + 50 wt % soluble AlQ₃ derivative/Mg, where NPB‐QP is a hole‐transporting polymer insoluble in toluene, the solvent for A435. Typical double spin‐coated organic layer devices are characterized by an emission at 530–539 nm, a threshold voltage of 6–9 V, and a maximum luminance of 1800–4000 cd/m² at 21–25 V. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3006–3016, 2003     

A Dicyanomethylene‐Substituted Triangulene: Effects of Molecular‐Symmetry Reduction and Electron‐Accepting Substituents on a Fused Polycyclic Neutral π‐Radical System

A triangulene‐based C₂‐symmetric 33 π‐conjugated stable neutral π‐radical, 2^. , which possesses two dicyanomethylene groups and one oxo group, has been designed, synthesized, and isolated as an analogue of tris(dicyanomethylene) derivative 1^. and trioxo derivative TOT^. with C₃ symmetry. Effects of molecular‐symmetry reduction and electron‐accepting substituents on this fused polycyclic neutral π‐radical system were studied in terms of their molecular structure, electronic‐spin structure, and electrochemical and optical properties with the help of theoretical calculations. Interestingly, this system ( 2^. ) has a four‐stage redox ability, like TOT^. , as well as low frontier energy levels and a small SOMO–LUMO gap, similar to 1^. , in spite of the loss of the degenerate LUMOs in symmetry‐lowered 2^. , which is associated with the attachment of the weaker electron‐accepting oxo group instead of the dicyanomethylene group in 1^. . These prominent results are attributable to the structural and electronic properties in the triangulene‐based highly delocalized fused polycyclic neutral π‐radical system.     

TiS2 and ZrS2 single‐ and double‐wall nanotubes: First‐principles study

Hybrid density functional theory has been applied for investigations of the electronic and atomic structure of bulk phases, nanolayers, and nanotubes based on titanium and zirconium disulfides. Calculations have been performed on the basis of the localized atomic functions by means of the CRYSTAL‐2009 computer code. The full optimization of all atomic positions in the regarded systems has been made to study the atomic relaxation and to determine the most favorable structures. The different layered and isotropic bulk phases have been considered as the possible precursors of the nanotubes. Calculations on single‐walled TiS₂ and ZrS₂ nanotubes confirmed that the nanotubes obtained by rolling up the hexagonal crystalline layers with octahedral 1T morphology are the most stable. The strain energy of TiS₂ and ZrS₂ nanotubes is small, does not depend on the tube chirality, and approximately obeys to D^–2 law (D is nanotube diameter) of the classical elasticity theory. It is greater than the strain energy of the similar TiO₂ and ZrO₂ nanotubes; however, the formation energy of the disulfide nanotubes is considerably less than the formation energy of the dioxide nanotubes. The distance and interaction energy between the single‐wall components of the double‐wall nanotubes is proved to be close to the distance and interaction energy between layers in the layered crystals. Analysis of the relaxed nanotube shape using radial coordinate of the metal atoms demonstrates a small but noticeable deviation from completely cylindrical cross‐section of the external walls in the armchair‐like double‐wall nanotubes. © 2013 Wiley Periodicals, Inc.     

GRECP/5e‐MRD‐CI calculation of the electronic structure of PbH

The correlation calculation of the electronic structure of PbH is carried out with the generalized relativistic effective core potential (GRECP) and multireference single‐ and double‐excitation configuration interaction (MRD‐CI) methods. The 22‐electron GRECP for Pb is used and the outer core 5s, 5p, and 5d pseudospinors are frozen using the level‐shift technique, so only five external electrons of PbH are correlated. A new configuration selection scheme with respect to the relativistic multireference states is employed in the framework of the MRD‐CI method. The [6, 4, 3, 2] correlation spin–orbit basis set is optimized in the coupled cluster calculations on the Pb atom using a recently proposed procedure, in which functions in the spin–orbital basis set are generated from calculations of different ionic states of the Pb atom and those functions are considered optimal that provide the stationary point for some energy functional. Spectroscopic constants for the two lowest‐lying electronic states of PbH (²Π_1/2, ²Π_3/2) are found to be in good agreement with the experimental data. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2002     

An Unprecedented Kernel Growth Mode and Layer‐Number‐Odevity‐Dependent Properties in Gold Nanoclusters

Kernel atoms of Au nanoclusters are packed layer‐by‐layer along the [001] direction with every full (001) monolayer composed of 8 Au atoms (Au₈ unit) in nanoclusters with formula of Au_8n+4(TBBT)_4n+8 (n is the number of Au₈ units; TBBTH=4‐tert‐butylbenzenelthiol). It is unclear whether the kernel atoms can be stacked in a defective‐layer way along the [001] direction during growth of the series of nanoclusters and how the kernel layer number affects properties. Now, a nanocluster is synthesized that is precisely characterized by mass spectrometry and single‐crystal X‐ray crystallography, revealing a layer stacking mode in which a half monolayer composed of 4 atoms (Au₄ unit) is stacked on the full monolayer along the [001] direction. The size and the odevity of the kernel layer number influence the properties (polarity, photoluminescence) of gold nanoclusters. The obtained nanocluster extends the previous formula from Au_8n+4(TBBT)_4n+8 to Au_4n+4(TBBT)_2n+8 (n is the number of Au₄ units).     

A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors

For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO₂ (LPD–SiO₂) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.     

Synthesis and Photophysical Properties of a Sc3N@C80‐Corrole Electron Donor–Acceptor Conjugate

Embedding endohdedral metallofullerenes (EMFs) into electron donor–acceptor systems is still a challenging task owing to their limited quantities and their still largely unexplored chemical properties. In this study, we have performed a 1,3‐dipolar cycloaddition reaction of a corrole‐based precursor with Sc₃N@C₈₀ to regioselectively form a [5,6]‐adduct ( 1 ). The successful attachment of the corrole moiety was confirmed by mass spectrometry. In the electronic ground state, absorption spectra suggest sizeable electronic communications between the electron acceptor and the electron donor. Moreover, the addition pattern occurring at a [5,6]‐bond junction is firmly proven by NMR spectroscopy and electrochemical investigations performed with 1 . In the electronically excited state, which is probed in photophysical assays with 1 , a fast electron‐transfer yields the radical ion pair state consisting of the one‐electron‐reduced Sc₃N@C₈₀ and of the one‐electron‐oxidized corrole upon its exclusive photoexcitation. As such, our results shed new light on the practical work utilizing EMFs as building blocks in photovoltaics.