Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs1−xSbx Type-II Quantum Dots

Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs_1−xSb_x layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs_1−xSb_x layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs_1−xSb_x type-II QDs.     

Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition x

InGaAs/AlAsSb systems lattice matched to InP have two distinguishable features: a high conduction band offset and type-II band configuration. Although, the former results in a large intersubband transition (ISBT) at conduction band, the latter makes it difficult to use the effective interband transition (IBT). To overcome this latter problem, the effect of the Sb was investigated because Sb would act as a band modulator from type-II to type-I. In_0.57Ga_0.43As_1-xSb_x/AlAs_0.48Sb_0.52 single quantum well (SQW) samples with various Sb compositions x, were grown on GaAs substrates via AlAs_0.48Sb_0.52 buffer layer. Their photoluminescence (PL) properties were examined to identify their band configurations. When the excitation laser power was increased, the PL property of In_0.57Ga_0.43As SQW sample, showed a larger blue shift than that of ones. This indicates that the band configuration modulates from type-II to type-I when the antimonide composition is larger than 0.13. These findings indicate that new functional devices can be fabricated using a combination of IBT and ISBT.     

Optical properties of GaN x As y P1?x?y semiconductor quaternary solid solutions

The photoluminescence method was used in the temperature range of 15?C300 K to study the optical properties of quantum-dimensional heterostructures based on GaN _x As _y P_(1?x?y) solid solutions, synthesized on the surface of a GaP (100) substrate. The calculations for the band-gap width of the GaN _x As _y P_(1?x?y) solid solution with the use of the band anticrossing model are shown to agree well with experimental data.     

Electronic Raman scattering from inter-valence band transition in photo-excited GaP and GaAs1−xPx crystals

Raman scattering from photo-created free carriers in undoped GaP and GaAs_1?xP_x (x = 0.85, 0.73 and 0.66) under high excitation intensity has been studied. Two new Raman bands have been observed and assigned to electronic transitions from the split-off hole band to the heavy hole band and from the light hole band to the heavy hole band. The spin-orbit splitting energies in these crystals have been determined from the analysis of observed Raman bands, and compared with other experimental values.     

Structural and electronic properties of zincblende phase of Tl x Ga1−x As y P1−y quaternary alloys: First-principles study

Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor Tl _x Ga_1?x As _y P_1?y quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of Tl _x Ga_1?x As, Tl _x Ga_1?x P ternary and Tl _x Ga_1?x As _y P_1?y quaternary alloys were composed by Vegard’s law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for Tl _x Ga_1?x As _y P_1?y quaternary alloys. The band gap of Tl _x Ga_1?x As _y P_1?y , E _g (x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on Tl _x Ga_1?x As _y P_1?y quaternary alloys and needs experimental verification.     

Electron beam epitaxy of alloy semiconductors

Abstract

It was investigated that, when an Al evaporated layer on a GaP (GaAs, GaAs_1?y P _y ) substrate was bombarded with total fluences of 0.1?1.0 × 10¹⁸ electrons cm^?2 at 7 MeV and at 50°C, a thin heteroepitaxial layer of Al _x Ga_1?x P (Al _x Ga_1?x As, Al _x Ga_1?x As_1?y P _y ) crystal was grown on S-doped (111), (100) and (110) GaP [(110) Cr, O-doped GaAs, (100) Te-doped GaAS_1?y P _y ] substrates.

Evidence for the creation of the epilayers before annealing was obtained from measurements using an X-ray diffractometer, an X-ray photoelectron spectrometer, a reflection high-energy electron diffractometer, a transmission electron microscope and a scanning transmission electron microscope. In the case of Al/GaP, the epitaxial layers of Al_～0.25Ga_～0.75P, Al_～0.5Ga_～0.5P and Al_～0.75Ga_～0.25P were grown on (111), (100) and (110) GaP substrates, respectively. Their compositions did not vary with the total electron fluence.     

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN_xAs_yP_(1-x-y)/GaP quantum wells on GaP substrates

The GaP-based dilute nitride direct band gap material Ga（NAsP） is gaining importance due to the monolithic integra- tion of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga（NAsP）/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen （N） concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/Al2Ga1-2P QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and AI into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.     

Nitrogen trap bound states in In1−xGaxP

Photoluminescence and absorption data are reported for nitrogen-doped In_1?xGa_xP (0.64 ? x ? 1.0) demonstrating the existence of a shallow N-trap bound state, N_Γ, in the direct-gap composition region. The N_Γ state, which is derived from the Γ conduction band minimum, exists along with a deeper bound state, N_X, derived from the X minima. These states, which are not observed in N-doped GaP, exhibit non-crossing behavior in the composition region of strong coupling between the N_Γ and N_X states. This observation is in accord with recent experimental and theoretical work indicating that the N-trap bound states in the related alloy GaAs_1-xP_x are produced by a combination of long and short range potentials which should also exist in In_1-xGa_xP.     

On the concentration dependence of the direct and indirect band gaps of substitutional GaPxAs1−x alloys

The variation of the direct and indirect band gaps of the substitutional GaP_xAs_1?x alloy with concentration has been studied by the KKRZ-ATA method. It is found that the gaps plotted against concentrations have little bowing on the low concentration side of GaP. This bowing has been discussed in the light of existing theoretical and experimental results.     

Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s1 bandstructures

Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs_1−x P_x, Ga_x In_1−x As, Ga_x Al_1−xAs, Ga_x In_1−x P, and GaSb_1−xP_x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp³s¹ bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb_1−xP_x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs_1−xP_x, of moderate importance for Ga_xIn_1−xAs and Ga_xAl_1−xAs, and relatively large for Ga_xIn_1−xP. However, such effects are found to be significant for GaSb_1−xP_x, with this alloy predicted to be in the strong scattering regime.     

Growth and photoelectric properties of graded-gap Si-(Si<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(GaP)<Subscript>x</Subscript> heterostructures

Theoretical grounds for formation of continuous substitutional solid solutions are analyzed taking into account the generalized moments, the difference in valence, and covalent radii of initial components. On the basis of these studies, the technology of formation of epitaxial (Si₂)_1?x(GaP)_t (0≤x≤1) layers on silicon substrates from the tin solution-melt using forced cooling is developed. The distribution of components over the thickness of Si-(Si₂)_1?x(GaP)_x layers, the photosensitivity, and the current-voltage characteristics of the Si-(Si₂)_1?x(GaP)_x heterostructures are studied. Analyses of the results of the X-ray studies and photoelectric properties of obtained solid-solution epitaxial layers indicate that the grown graded-gap (Si₂)_1?x(GaP)_x layers have a high structural quality.     

AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

Impédance des jonctions entre une électrode polycristalline d'alliage GaxIn1−xP et un électrolyte aqueux

Impedance measurements were made in the dark on n-type Ga_xIn_1?xP polycrystal electrodes (0 ? x ? 1) in different electrolyte aqueous solutions as a function of applied voltage and of frequency. The observed frequency dependence of the impedance elements can be attributed to dipole relaxation phenomena in the space charge layer of the semiconductor electrode, in relation to the surface etching and polishing. It is possible to measure the number of majority carriers and position of the flat band potential with the composition x. Impedance measurements coupled with the illumination can be used to obtain the position of energy levels. We have shown a linear shift of the flat band potential with x.     

Observation of Brillouin scattering in mixed InxGa1−xP crystals

Brillouin scattering is observed in the In_xGa_1?xP solid solution with 0.38 ? × ? 0. The composition dependences of the longitudinal and transverse acoustic phonons propagating along the [111] direction are investigated and compared with the expressions derived by Lakshmi et al. from the random element isodisplacement theory. Pronounced broadening of the Brillouin peaks is observed with the increasing amount of In in GaP.     

Efficient band structure engineering and visible-light response in ZrS2/GaS heterobilayer by electrical field or external strains

Via first-principle methods, the electronic structures and optical properties of 2D ZrS₂/GaS van der Waals heterostructure (vdWH) are studied. It is found that the band alignment changes from type-II to type-I under negative electrical field, and compressive strains. The transition points are -0.2 V/Å and -1%, respectively. The band gap changes efficiently under positive electrical field and compressive strains. The tensile strains increase the optical adsorption coefficients in ultraviolet regions, while the compressive strains increase the optical adsorption coefficients in visible region significantly.     

应力对(GaP)1/(InP)1(111)超晶格体内和表面电子结构的影响

考虑到应力对超薄层(GaP)₁/(InP)₁(111)结构中Ga-P和In-P键长的作用为均匀分布的情况,本文提出在紧束缚近似下,将应力的影响直接反映到Harrison的交迭积分项中,并利用Recursion方法全面计算了由Keating模型确定的稳定(GaP)₁/(InP)₁(111)超晶格体内和表面的电子结构,结果表明,这种材料的带隙为1.88eV,它比体材料GaP(2.91eV)和InP(1.48eV)的平均值小 关键词：     

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al_0.45Ga_0.55As layers onn ⁺  -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.     

Theoretical investigation of the conduction and valence band offsets of GaAs1−x Nx/GaAs1−yNy heterointerfaces

Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs_1−xN_x/GaAs_1−yN_y heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs_1−xN_x over layer falls completely inside the band gap of the substrate GaAs_1−yN_y and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs_1−yN_y which is fully inside the band gap of the GaAs_1−xN_x over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs_1−xN_x/GaAs and GaAs_1−xN_x/GaAs_0.98N_0.02 heterointerfaces have been determined.     

Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)

Previously it has been suggested on theoretical grounds and early data on N-doped In_1?xGa_xP that at the point of degeneracy of the Γ band edge and the N-trap (x ≡ x_N) the electron-hole recombination probability associated with the trap is resonantly enhanced by the presence of Γ band states. Data are presented on N-doped and N-free In_1?xGa_xP_1?zAs_z/ GaAs_1?yP_y (x ～ 0.70, y ≈ 0.40, z ～ 0.01) single heterojunction laser diodes fabricated on the same VPE GaAs_1?yP_y:N system, where the position of the N trap is well known, indicate that the N trap weakens the band-to-band (Γ) transition and is not itself enhanced beyond the usual band structure enhancement (BSE) described recently for ternary alloys. A theoretical argument is offered to explain the discrepancy between earlier theory and experimental observations.