Surface ablation оf aluminum and silicon by ultrashort laser pulses of variable width

Single-shot thresholds of surface ablation of aluminum and silicon via spallative ablation by infrared (IR) and visible ultrashort laser pulses of variable width τ_las (0.2–12 ps) have been measured by optical microscopy. For increasing laser pulse width τ_las < 3 ps, a drastic (threefold) drop of the ablation threshold of aluminum has been observed for visible pulses compared to an almost negligible threshold variation for IR pulses. In contrast, the ablation threshold in silicon increases threefold with increasing τ_las for IR pulses, while the corresponding thresholds for visible pulses remained almost constant. In aluminum, such a width-dependent decrease in ablation thresholds has been related to strongly diminished temperature gradients for pulse widths exceeding the characteristic electron-phonon thermalization time. In silicon, the observed increase in ablation thresholds has been ascribed to two-photon IR excitation, while in the visible range linear absorption of the material results in almost constant thresholds.     

On the ultrafast nonradiative relaxation of optically excited F2-centers

Single picosecond light pulses of a Nd-YAG excite-and-probe beam spectrometer are used for optical excitation of F₂-centers in LiF-OH. By measuring the rise of optical gain of these centers an upper limit of the configurational relaxation time could be estimated to be τ_nr < 10 ps. The emission cross section of F₂-centers at room temperature was found to be σ_e = (6 ± 2) x 10^-17cm².     

Picosecond laser ablation of thin copper films

The ablation process of thin copper films on fused silica by picosecond laser pulses is investigated. The ablation area is characterized using optical and scanning electron microscopy. The single-shot ablation threshold fluence for 40 ps laser pulses at 1053 nm has been determinated toF _thres = 172 mJ/cm². The ablation rate per pulse is measured as a function of intensity in the range of 5 × 10⁹ to 2 × 10¹¹ W/cm² and changes from 80 to 250 nm with increasing intensity. The experimental ablation rate per pulse is compared to heat-flow calculations based on the two-temperature model for ultrafast laser heating. Possible applications of picosecond laser radiation for microstructuring of different materials are discussed.     

Biexponential intersubband relaxation in n-modulation-doped quantum-well structures

Intersubband scattering in an n-modulation-doped GaAs/Al_0.31Ga_0.69As quantum-well structure is systematically investigated as a function of temperature and pump intensity. For the first time biexponential relaxation is observed during infrared bleaching experiments. The fast component with a time constant of ∼1 ps, which represents the depopulation of the first excited well subband, is found to dominate the signal more and more with decreasing temperature and pump intensity. The decay time of the slower component rises with decreasing temperature from τ₂=8 ps atT=300 K to τ₂=23 ps atT=10 K. This component is believed to be connected with a carrier transfer to the potential minima in the barrier layers. The intensity dependent excitation mechanism and the relaxation processes are discussed with the help of detailed numerical simulations.     

Laser Ablation of Metals by Low-Density Picosecond Pulses

Thresholds of laser ablation ofmetals for the picosecond range of laser pulse duration are determined. Within the two-temperature metal model, the space-time dependences of the electron and lattice temperature are obtained. It is shown that ablation parameters become dependent on the pulse duration at the pulse duration τ _p ≥ τ _ie , where τ _ie is the cooling time of the electron gas. For noble metals, such pulse durations are τ _p ≈ 3 ? 10 ps.     

Generation of fast ions in femto-and picosecond laser plasmas at low intensities of the heating radiation

X-ray spectra from Teflon targets irradiated by laser pulses with a duration of 60 fs to 1 ps have been investigated experimentally. It is shown that, when the contrast of the laser pulse is sufficiently low, the effect of self-focusing of the main laser pulse in the plasma produced by the prepulse can significantly enhance the generation efficiency of fast particles. In this case, ions with energies as high as ～1 MeV are observed at relatively low laser intensities, q _las ≈ (4–6) × 10¹⁶ W/cm².     

飞秒激光在空气和水中对硅片烧蚀加工的实验研究

采用1 kHz,800 nm,50 fs—24 ps的钛宝石激光脉冲对单晶硅样品在空气和水溶液环境中的烧蚀加工特性进行了研究.实验观察到了超短脉冲激光在空气氛围中烧蚀形成的双层环状结构,分析揭示了加工区域中心和边缘的烧蚀物理机制分别为热熔化和库仑爆炸,并测量了双层环状结构半径随入射激光能量、脉冲数及持续时间等的变化关系,结果表明获取较大深-宽比的加工效果需选择小能量脉冲激光的多次作用.在水溶液环境中,实验发现飞秒激光在样品表面诱导产生了亚微米量级的多孔状结构,而皮秒激光则更容易实现对硅表面的非热性去除.这是由于激光诱导的光机械应力和空泡效应随脉冲宽度变大而增强所致,在实验上确立了区分这两种不同加工状态的临界脉冲宽度. 关键词： 飞秒激光 硅片 激光加工     

Relaxation mechanism in γ-ray-irradiated L-alanine studied by transfer saturation EPR and pulse EPR

Stable paramagnetic centers in γ-ray-irradiated L-alanine dosimeters exhibit a maximum in relaxation rate in the vicinity of 190 K. The mechanism of this relaxation rate has been investigated on the first stable alanine radical center, SARI, by employing continuous-wave transfer saturation electron paramagnetic resonance and pulse electron paramagnetic resonance techniques. The detected in-phase and out-of-phase spectra as well as phase memory times,T _M, indicate that besides the well-known τ_p of the CH₃ group of SAR1 an additional correlation time, τ_l (ΔElk=2689±50 K and 0 τ₁₀ = 0.15 ± 0.03 ps), is involved in the transverse relaxation process and effects the SAR1 center. For the SAR1 center this mechanism originates from the hindered motion of undamaged CH₃ and NH ₃ ⁺ groups in the lattice. The motion of these groups additionally effects the spectrum of the SAR1 center through averaging out of the anisotropic splitting.     

Interaction of ultra-short laser pulses with CIGS and CZTSe thin films

The thin-film solar cell technologies based on complex quaternary chalcopyrite and kesterite materials are becoming more attractive due to their potential for low production costs and optimal spectral performance. As in all thin-film technologies, high efficiency of small cells might be maintained with the transition to larger areas when small segments are interconnected in series to reduce photocurrent and related ohmic losses in thin films. Interconnect formation is based on the three scribing steps, and the use of a laser is here crucial for performance of the device. We present our simulation and experimental results on the ablation process investigations in complex CuIn_1?x Ga _x Se₂ (CIGS) and Cu₂ZnSn(S,Se)₄ (CZTSe) cell’s films using ultra-short pulsed infrared (~1 μm) lasers which can be applied to the damage-free front-side scribing processes. Two types of processes were investigated—direct laser ablation of ZnO:Al/CIGS films with a variable pulse duration of a femtosecond laser and the laser-induced material removal with a picosecond laser in the ZnO:Al/CZTSe structure. It has been found that the pulse energy and the number of laser pulses have a significantly stronger effect on the ablation quality in ZnO:Al/CIGS thin films rather than the laser pulse duration. For the thin-film scribing applications, it is very important to carefully select the processing parameters and use of ultra-short femtosecond pulses does not have a significant advantage compared to picosecond laser pulses. Investigations with the ZnO:Al/CZTSe thin films showed that process of the absorber layer removal was triggered by a micro-explosive effect induced by high pressure of sublimated material due to a rapid temperature increase at the molybdenum-CZTSe interface.     

Dielectric dispersion in d-ADP

Complex electric permittivity in paraelectric phase close to T_c of d-ADP over the frequency range 0.8–38 GHz has been measured. Molecular relaxation time τ₀ at 239 K equals to 2.2 or 4.0 ps depending on the internal field model and is very close to that found for d-KDP.     

Laser ablation of gold: Experiment and atomistic simulation

The interaction of radiation of a picosecond X-ray laser (wavelength λ = 13.9 nm) with targets made of a thick gold film has been studied theoretically and experimentally. It has been shown experimentally that the action of individual X-ray laser pulses with a fluence of F ≈ 21 mJ/cm² initiates the nanostructuring of the gold surface. Explicitly taking into account the electron subsystem, we have proposed an atomistic model of ablation that makes it possible to adequately describe the experimental results. The atomistic simulation involves the ion-ion potential depending on the electron temperature T _e . The use of such a potential makes it possible to take into account an increase in the pressure in the system with increasing T _e and to reveal two laser ablation mechanisms.     

Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: II. Surface phonon treatment

The electron energy relaxation is investigated as a function of the “electron temperature” T_e in the n-channel of a (100) surface silicon MOSFET device by inspecting the phenomenological energy relaxation time τ_ε(T_e). τ_ε is determined theoretically and compared to experimental results in order to identify the energy relaxation mechanism(s) present at the interface. Two dimensional electron transport is assumed. Single activation temperature (θ) Rayleigh wave scattering and acoustic Rayleigh wave scattering are studied as possible energy loss processes. The effects of electric subbanding near the surface are included. τ_ε is calculated for T_e ? 15 K in the electric quantum limit. We find that a single θ = 12.0 K Rayleigh phonon fits theory to experiment for a single electron inversion density (N_inv) case, but can not provide a fit simultaneously for more than one N_inv value. Theory and experiment disagree when Rayleigh wave acoustic scattering is assumed.     

Temperature dependence of the order-parameter relaxation time of a superconducting indium film

We have measured the critical d.c. current of a superconducting indium bridge in the presence of a superimposed a.c. current for frequencies up to 400 MHz. The temperature dependent order parameter relaxation time has been determined from these experiments, yielding the value τ_E = 80 ps for the inelastic electron phonon scattering time.     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

The proton relaxation of methyl cyanide in the presence of Ni(II) ions,as studied by spin-echo techniques

The proton relaxation times (T ₁ and T ₂) of methyl cyanide, in the presence of Ni(II) ions, have been measured as a function of temperature and frequency by spin-echo techniques. The observed decay times (T ₂?) have also been measured as a function of the separation, t _ep, between the pulses in a Carr-Purcell train of echos. The results obtained in the limit of long pulse separation have been fitted to existing theories. The rotational correlation time of the Ni/MeCN complex, τ _R , the electron spin relaxation time, τ _S , and the distance of closest approach of the protons to the nickel have been estimated from the results. In addition the scalar coupling constant, the exchange rate τ _B and the activation energies for τ _B , τ _S and τ _R have been evaluated. The chemical exchange parameters obtained differ significantly from those obtained by previous workers. There is evidence from the pulse dependence experiments that the complex is a distorted octahedron.     

Short-pulse laser ablation of solids: from phase explosion to fragmentation

The mechanisms of laser ablation in silicon are investigated close to the threshold energy for pulse durations of 500 fs and 50 ps. This is achieved using a unique model coupling carrier and atom dynamics within a unified Monte Carlo and molecular-dynamics scheme. Under femtosecond laser irradiation, isochoric heating and rapid adiabatic expansion of the material provide a natural pathway to phase explosion. This is not observed under slower, nonadiabatic cooling with picosecond pulses where fragmentation of the hot metallic fluid is the only relevant ablation mechanism.     

Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF₂, MgF₂), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t_p = 10 ps) lasers at UV wavelengths (λ₁ = 355 nm and λ₂ = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ₁ = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ₁ = 266 nm and λ₂ = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm², respectively.     

Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

Nd:YAG laser ablation characteristics of thin CIGS solar cell films

This work reports that the ablation characteristics of thin CuIn_1?x Ga _x Se₂ (CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy.     

Effect of the spectral distribution of a chirped pulse on the interaction of the high-power laser radiation with matter

The interaction of high-power picosecond laser radiation with solid targets is experimentally studied for the first time at various spectral distributions of a chirped laser pulse. The interaction of the high-power laser radiation with the target is studied at four regimes of the experimental setup: (i) at a relatively high contrast (10³) in the picosecond (Δt ～ 25 ps) range, (ii) at a relatively low contrast (3 × 10¹) in the picosecond (Δt ～ 25 ps) range, (iii) with spectral distortions of the chirped pulse, and (iv) with a strongly modulated spectrum of the chirped pulse. The results obtained reveal a strong dependence of the atomic and nuclear processes in the laser picosecond plasma on the spectral distribution of the chirped laser pulse. The prospects for the application of the spectral interferometry of chirped pulses for the online control of the parameters of the high-power laser radiation are demonstrated.