Si/SiO<Subscript>2</Subscript> superlattice based optical planar microcavity

Si/SiO₂ Fabry–Pérot microcavities with a silicon nanocrystal (Si-nc) active spacer have been realized using a novel process based on a reactive magnetron sputtering of a pure silica target. Spectral, spatial and temporal behaviours of the quantum dots confined inside the resonator are detailed. Compared with a reference sample, the spectral and spatial emission distributions are significantly narrowed and the forward emission intensity is enhanced. Time resolved photoluminescence measurements also revealed an increase of the spontaneous emission rate. PACS 42.70.Qs; 78.55.-m; 78.66.-w     

Comparison between Si/SiO<Subscript>2</Subscript> and InP/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> based MOSFETs

The discrete breathers in graphane in thermodynamic equilibrium in the temperature range 50–600 K are studied by molecular dynamics simulation. A discrete breather is a hydrogen atom vibrating along the normal to a sheet of graphane at a high amplitude. As was found earlier, the lifetime of a discrete breather at zero temperature corresponds to several tens of thousands of vibrations. The effect of temperature on the decay time of discrete breathers and the probability of their detachment from a sheet of graphane are studied in this work. It is shown that closely spaced breathers can exchange energy with each other at zero temperature. The data obtained suggest that thermally activated discrete breathers can be involved in the dehydrogenation of graphane, which is important for hydrogen energetics.     

Laser-induced thermal effects on Si/SiO<Subscript>2</Subscript> free-standing superlattices

The thermal effects produced by continuous-wave laser radiation on free-standing Si/SiO₂ superlattices are studied. We compare two samples with different SiO₂ layer thicknesses (2 and 6 nm) and the same Si layer thickness (2 nm). The as-prepared free-standing superlattices contain some amount of Si nanocrystals (Si-nc). Intense laser irradiation at 488 nm of the as-prepared samples enhances the Raman scattering of Si-nc by two orders of magnitude. This laser-induced crystallization originates from melting of Si nanostructures in silica, which makes Si-nc better ordered and better isolated from the oxide surrounding. Continuous-wave laser control of Si-nc stress was achieved in these samples. In the proposed model, intense laser radiation melts Si-nc, and Si crystallization upon cooling down from the liquid phase in a silica matrix leads to compressive stress. The Si-nc stress can be tuned in the ∼3 GPa range using laser annealing below the Si melting temperature. The high laser-induced temperatures were verified with Raman spectroscopy. The laser-induced heat leads to a strongly nonlinear rise of light emission. The light emission is also observed in the anti-Stokes region, and its temperature dependence is practically the same for the two studied samples. The laser-induced temperature is essentially controlled by the absorbed laser power. PACS 78.55.-m; 78.20.-e; 68.55.-a; 78.30.-j     

Theoretical studies on intervalley splittings in Si/SiO<Subscript>2</Subscript> quantum dot structures

Using the coupled cluster method we investigatespin-s J ₁-J′ ₂ Heisenberg antiferromagnets (HAFs) on an infinite, anisotropic, two-dimensional triangular lattice for the two cases where the spin quantum number s = 1 and s = $\frac{3} {2}$\frac{3} {2}. With respect to an underlying square-lattice geometry the model has antiferromagnetic (J ₁ > 0) bonds between nearest neighbours and competing (J′ ₂ > 0) bonds between next-nearest neighbours across only one of the diagonals of each square plaquette, the same diagonal in each square. In a topologically equivalent triangular-lattice geometry, the model has two types of nearest-neighbour bonds: namely the J′ ₂ ≡ κJ ₁ bonds along parallel chains and the J ₁ bonds producing an interchain coupling. The model thus interpolates between an isotropic HAF on the square lattice at one limit (κ = 0) and a set of decoupled chains at the other limit (κ → ∞), with the isotropic HAF on the triangular lattice in between at κ = 1. For both the spin-1 model and the spin-$\frac{3} {2}$\frac{3} {2} model we find a second-order type of quantum phase transition at κ _c = 0.615 ± 0.010 and κ _c = 0.575 ± 0.005 respectively, between a Néel antiferromagnetic state and a helically ordered state. In both cases the ground-state energy E and its first derivative dE/dκ are continuous at κ = κ _c , while the order parameter for the transition (viz., the average ground-state on-site magnetization) does not go to zero there on either side of the transition. The phase transition at κ = κ _c between the Néel antiferromagnetic phase and the helical phase for both the s = 1 and s = $\frac{3} {2}$\frac{3} {2} cases is analogous to that also observed in our previous work for the s = $\frac{1} {2}$\frac{1} {2} case at a value κ _c = 0.80 ± 0.01. However, for the higher spin values the transition appears to be of continuous (second-order) type, exactly as in the classical case, whereas for the s = $\frac{1} {2}$\frac{1} {2} case it appears to be weakly first-order in nature (although a second-order transition could not be ruled out entirely).     

Influence of the Si/SiO<Subscript>2</Subscript> interface on the charge carrier density of Si nanowires

The electrical properties of Si nanowires covered by a SiO₂ shell are influenced by the properties of the Si/SiO₂ interface. This interface can be characterized by the fixed oxide charge density Q_f and the interface trap level density D_it. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Q_f, D_it, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius a_crit. An analytic expression for a_crit is derived. PACS 68.65.-k; 61.46.+w; 81.10.Bk     

Absorption and photoluminescence properties of silver clusters in SiO<Subscript>2</Subscript> matrix

Absorption and luminescence properties of silver nanoclusters embedded in SiO₂ matrixes were studied experimentally. Thin SiO₂ films with different amount of silver were produced by co-deposition of Ag and SiO₂ onto the silica substrates in vacuum. The thus obtained films possess three peaks in absorption spectra at 297, 329 and 401 nm and two peaks in luminescence spectra at about 500 and 650 nm. We ascribed these spectral features to silver nanoclusters of different sizes that present in the film. Thermal annealing transforms both absorption and emission spectra of the films. Lager clusters that are formed after annealing possess one absorption band at 350–450 nm and one luminescence band at 510 nm. The luminescence was observed only in samples with the silver content of less than 2.2%. Quenching of the luminescence in samples with higher concentration of silver is due to the presence of larger particles with plasmonic properties.     

A computer study of the Raman spectra of the (GaN)<Subscript>129</Subscript>, (SiO<Subscript>2</Subscript>)<Subscript>86</Subscript>, and (GaN)<Subscript>54</Subscript>(SiO<Subscript>2</Subscript>)<Subscript>50</Subscript> nanoparticles

The Raman spectra of the (GaN)₁₂₉, (SiO₂)₈₆, and (GaN)₅₄(SiO₂)₅₀ nanoparticles were calculated using the molecular dynamics method. The spectrum of (SiO₂)₈₆ had three broad bands only, whereas the Raman spectrum of (GaN)₁₂₉ contained a large number of overlapping bands. The form of the Raman spectrum of (GaN)₅₄(SiO₂)₅₀ was determined by the arrangement of the GaN and SiO₂ components in it. The nanoparticle with a GaN nucleus had a continuous fairly smooth spectrum over the frequency range 0 ≤ ω ≤ 600 cm⁻¹, whereas the spectrum of the nanoparticle with a SiO₂ nucleus contained well-defined bands caused by vibrations of groups of atoms of different kinds and atoms of the same kind.     

Casimir friction force between a SiO<Subscript>2</Subscript> probe and a graphene-coated SiO<Subscript>2</Subscript> substrate

The possibility of mechanical detection of Casimir friction with the use of a noncontact atomic force microscope is discussed. A SiO₂ probe tip located above a graphene-coated SiO₂ substrate is subjected to the frictional force caused by a fluctuating electromagnetic field produced by a current in graphene. This frictional force will create the bend of a cantilever, which can be measured by a modern noncontact atomic force microscope. Both the quantum and thermal contributions to the Casimir frictional force can be measured using this experimental setup. This result can also be used to mechanically detect Casimir friction in micro- and nanoelectromechanical systems.     

Nanostructures of Si/SiO<Subscript>2</Subscript>/metal systems with tracks of fast heavy ions

Structures based on the SiO₂/n-Si and SiO₂/p-Si systems, with nanopores in silicon dioxide layers filled with Cu and Ni nanoparticles, have been prepared and investigated using the fast heavy ion technology, which includes irradiation with ¹⁹⁷Au²⁶⁺ ions, chemical etching of ion tracks, and subpotential electrochemical deposition. The selectivity of filling nanopores with metals and cluster character of their formation in tracks is shown.     

Optical studies of Si/SiO<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript> interfaces by second-harmonic generation spectroscopy of silicon interband transitions

Optical second-harmonic generation (SHG) studies of Si/SiO₂ interfaces by resonant two-photon excitation of Si interband transitions are reviewed. Three different types of interband resonances at Si interfaces are identified in SHG spectra: (i) E₁ and E₂ critical-point bulk interband transitions in the space-charge region of charged Si interfaces, (ii) E₁- and E₂-type transitions associated with Si atoms at the interface in bulk-like tetrahedral coordination, and (iii) transitions related to Si interface atoms with bonding properties specific of the atomic structure of the interface. The effects of the polarity of space-charge fields on SHG spectra of Si(100)/SiO₂ interfaces are also discussed. PACS 73.40.Qv; 73.20.-r; 42.65.Ky     

Impedance of Si/SiO<Subscript>2</Subscript> composites in the vicinity of the percolation threshold

The Si/SiO₂ composites, in which the concentration of the conducting silicon phase is close to the percolation threshold, have been prepared using the ceramic technology and studied at an alternating current. It has been found that an increase in the potential difference in a direct-current electric field leads to a decrease in the dispersion of time constants of dielectric spacers in the “Si grain-SiO₂ spacer-Si grain” structures forming a conducting cluster in the composite.     

Coaxial ZnO/SiO<Subscript>2</Subscript> nanocables fabricated by thermal evaporation/oxidation

ZnO/SiO₂ coaxial nanocables have been synthesized on silicon substrates by simply evaporating zinc powder under an argon and argon/oxygen mixed atmosphere sequentially. The diameters of these nanocables vary from 50 to 100 nm and the lengths up to several millimeters. Electron microscopy and chemical composition investigations reveal that the nanocable consists of a crystalline ZnO core surrounded by an amorphous silica sheath. The electron diffraction pattern proves that the long-axis direction of ZnO cores grows along the [0001] direction. Silica nanotubes with wall structures have been obtained by the selective dissolution of the cores with hydrochloric acid. PACS 81.10.Bk; 81.05.Hd     

Raman scattering by Hg<Subscript>2</Subscript>F<Subscript>2</Subscript> polycrystals

The Raman spectra of Hg₂F₂ polycrystals are experimentally measured for the first time. The spectra of Hg₂F₂ are interpreted using X-ray diffraction analysis and group-theoretical treatment. The results obtained are discussed in comparison with the spectra of Hg₂Hal₂ crystals.     

Synthesis and nanostructural investigation of TiO<Subscript>2</Subscript> nanorods doped by SiO<Subscript>2</Subscript>

TiO₂ Nano rods can be used as dye-sensitized solar cells, various sensors and photocatalysts. These nanorods are synthesized by a hydrothermal corrosion process in NaOH solution at 200°C using TiO₂ powder as the source material. In the present work, the synthesis of TiO₂ nanorods in anatase, rutile and Ti₇O₁₃ phases and synthesis of TiO₂ nanorods by incorporating SiO₂ dopant, using the sol–gel method and alkaline corrosion are reported. The morphologies and crystal structures of the TiO₂ nanorods are characterized using field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) study. The obtained results show not only an aggregation structure at high calcination temperatures with spherical particles but also Ti–O–Si bonds having four-fold coordination with oxygen in SiO^4 −.     

Features of high-power ion beam irradiation of nanoporous Si and SiO<Subscript>2</Subscript>

Nanoporous Si and SiO₂ melting observed under high-power ion beam irradiation of nanosecond duration was investigated. The sizes of ellipsoidal particles formed in Si and those of holes formed in SiO₂ under irradiation were determined. The possible origin of these morphology features was discussed.     

Friction and wear properties of ZrO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript> composite nanoparticles

In this article, the lubrication properties of ZrO₂/SiO₂ composite nanoparticles modified with aluminum zirconium coupling agent as additives in lubricating oil under variable applied load and concentration fraction were reported. It was demonstrated that the modified nanoparticles as additives in lubrication can effectively improve the lubricating properties. Under an optimized concentration of 0.1 wt%, the average friction coefficient was reduced by 16.24%. This was because the nanoparticles go into the friction zone with the flow of lubricant, and then the sliding friction changed to rolling friction with a result of the reduction of the friction coefficient.     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at     

Structural properties of the range-II- and range-III order in amorphous-SiO<Subscript>2</Subscript> probed by electron paramagnetic resonance and Raman spectroscopy

In the present work we report an experimental investigation by electron paramagnetic resonance spectroscopy on the hyperfine structure of the E'_g_\gamma point defect, probing the local arrangement of the network (range-II order), and by Raman spectroscopy on the D₁ and D₂ lines, probing mean features of the network (range-III order). Our studies, performed on a-SiO₂ samples thermally treated at 1000 °C in air for different time durations, show that changes of the hyperfine structure and of the D₁ and D₂ lines occur in a correlated way. These results give strong evidence that the range-II and range-III order properties are intimately related to each other and that these properties are determined by the history of the material.     

Structure of Ultrathin Polycrystalline Iron Films Grown on SiO<Subscript>2</Subscript>/Si(001)

The structure of polycrystalline Fe films grown on an oxidized Si(001) surface at room temperature has been studied by the technique of high-energy electron diffraction. It has been found that the grain orientation in the films depends of the amount of deposited iron. In Fe films less than 5 nm thick, grains have been found to be randomly oriented. Fe films more than 5 nm in thickness exhibit the (111) texture with an axis coinciding with the surface normal. The angular dispersion of the [111] direction in the Fe lattice from the surface normal is ±25°. It has been found that as the Fe films become thicker, the (111) texture changes to the (110) texture.     

RETRACTED ARTICLE: Refractive-index tailoring and morphological evolutions in Gd<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript> and ZrO<Subscript>2</Subscript>–SiO<Subscript>2</Subscript> composite thin films

Refractive-index tailoring and morphological evolutions in two different thin film composite systems of gadolinia–silica (Gd₂O₃:SiO₂) and zirconia–silica (ZrO₂:SiO₂) deposited through reactive electron-beam codeposition processes are discussed in this research paper. For Gd₂O₃:SiO₂ the refractive-index tuning has been achieved from 1.45 to 2.18, whereas in the case of ZrO₂:SiO₂ the achieved tunable range is from 1.45 to 2.45 in the ultraviolet region. Under certain compositional mixings with lower silica fractions both the systems demonstrated relative microstructural and morphological densifications. Such evolutions were very successfully derived through phase-modulated ellipsometry and atomic force microscopy. The composition-dependent refractive-index tailoring and microstructural densifications have been investigated by adopting Tauc–Lorentz and single-effective-oscillator models. The morphological correlation functions have also very aptly supported such evolutions in these composite films. These experimental results indicate their favourable properties and applicability down to the extreme ultraviolet wavelength region of the electromagnetic spectrum. PACS 42.79.Wc; 78.66.-w; 78.20.Ci; 61.16.Ch; 42.70.-a;68.55.-a; 68.35.Bs; 81.15.Ef