Free carrier absorption in quantizing magnetic fields: Nonpolar optical phonon scattering

A quantum theory of free carrier absorption in nondegenerate semiconductors and in strong magnetic fields which was previously developed to treat the case when acoustic phonon scattering dominates the free carrier absorption process [1] is extended to treat the case when nonpolar optical scattering is important. When the electromagnetic radiation field is polarized parallel to the direction of the applied magnetic field, results are obtained which are similar to those when acoustic phonon scattering is dominant. The free carrier absorption is an oscillatory function of the magnetic field which on the average increases in magnitude with the magnetic field. However, more structure in the free carrier absorption occurs when nonpolar optical phonon scattering dominates. This is due to the fact that there are two periods in the oscillatory magnetic field dependence associated with the emission or the absorption of optical phonons during the intraband transitions. When the cyclotron frequency exceeds the sum of the photon and optical phonon frequencies, i.e. ω_c > θ + ω_o, the free carrier absorption is predicted to increase linearly with magnetic field when ?ω_c? k_BT. The magnetic field dependence of the free carrier absorption can be explained in terms of phonon-assisted transitions between the various Landau levels in a band involving the emission and absorption of optical phonons.     

Phonon Band Filling and Photon Emission by Phonons

Phonon generation by electrons is supplied in n-type Si crystals in electric fields E100 kV/cm at the lattice temperature of 80 K employing the ensemble Monte Carlo technique. Electron transfer between equivalent energy valleys is accounted for the g-type- and f-type phonon absorption and emission. Acoustic phonons are accounted for the quasi-elastic scattering of electrons within the energy valleys. Excess phonon number is determined using numerical data on phonon generation rate and experimental values of phonon lifetimes. The feasibility of stimulated emission of infrared-range photons due to direct optical transitions between the phonon bands is discussed.     

Amplification of optical phonons in the multiphoton absorption in semiconductors

The optical phonon scattering by electrons in the presence of a strong radiation field is discussed. It is shown that in the strong-field limit the optical phonon population may become unstable.     

The longitudinal magnetophonon effect in semiconductors containing magnetic impurities

The dependence of longitudinal magnetoresistance on magnetic field in semiconductors containing magnetic impurities is investigated theoretically. The calculation takes into account the scattering of electrons on magnetic impurities and on optical phonons. The inelastic optical phonon scattering itself is responsible for magnetophonon oscillations of the magnetoresistance, the extremes of these oscillations occuring when energy distance between Landau levels is equal to the energy of optical phonon, $\text{h}\text{?}$ω₀. The scattering on magnetic impurities may lead to spin flip electronic transitions. The spin flip electronic transitions manifest themselves as additional minima on the oscillatory picture of magnetoresistance. These new minima occur when the energy separation between spin-split Landau levels is equal to $\text{h}\text{?}$ω₀.     

Spin relaxation due to polar optical phonon scattering

Spin relaxation due to polar optical phonon scattering in semiconductors was investigated. The relaxation of the electron spin was found to increase with increasing the strength of the electric field. However, a high field completely depolarized the electron spin due to an increase of the spin precession frequency of the hot electrons, suggesting that high field transport conditions might not be desirable for spin-based technology with these semiconductors. It was also found that spin relaxation decreases with increasing moderately n-doping density or decreasing temperature. The results were discussed in comparison with the data available in the literature.     

High reflectivity phase conjugation in magnetized diffusion driven semiconductors

Optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in magnetized diffusion driven semiconductors under the off-resonant transition regime has been investigated theoretically. The model is based upon the coupled-mode approach and incorporates the effect of pump absorption through the first-order induced polarization. The linear dispersion is found not to affect the reflectivity of the phase conjugate Stokes shifted Brillouin mode. The reflectivity of the image radiation is dependent upon the Brillouin susceptibility and can be significantly enhanced through n-type doping of the crystal and the simultaneous application of magnetic field. Moreover, the threshold of the pump intensity required for the occurrence of SBS in the crystal with finite optical attenuation can be considerably diminished through a suitable choice of the excess carrier concentration and the magnetic field. Consequently, OPC-SBS becomes a possible tool in phase-conjugate optics even under not-too-high power laser excitation by using moderately doped n-type semiconductors kept under the influence of magnetic field. Numerical estimates made for n-InSb crystal at 77 K duly irradiated by nanosecond pulsed 10.6 μm CO₂ laser show that high OPC-SBS reflectivity (70%) can be achieved at pump intensities below the optical damage threshold if the crystal is used as an optical waveguide with relatively large interaction length (L ∼5 mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors.     

Complex microscopic optical potential between two nuclei based on Dirac-Brueckner theory for nuclear matter

The real and imaginary parts of the optical-model potential between two nuclei are calculated in the energy density formalism. The energy density is derived from the Dirac-Brueckner approach to nuclear matter. In this approach, both free NN scattering and the saturation properties of nuclear matter can be explained starting from a realistic NN interaction. The relativistic features incorporated in the Dirac-Brueckner approach make the real part of the optical potential less attractive than that obtained in a non-relativistic calculation while the imaginary part is enhanced. The comparison of the calculated differential cross section for elastic ¹²C-¹²C scattering with the experimental data suggests that the enhancement of the imaginary part due to the relativistic treatment is favourable while its repulsive contribution to the real part is unfavourable.     

双能谷效应对N型掺杂Si基Ge材料载流子晶格散射的影响

性能优越的Si基高效发光材料与器件的制备一直是Si基光电集成电路中最具挑战性的课题之一.Si基Ge材料不仅与成熟的硅工艺相兼容,而且具有准直接带特性,被认为是实现Si基激光器最有希望的材料.对Si基Ge材料N型掺杂的研究有利于提示出其直接带发光增强机理.本文研究了N型掺杂Si基Ge材料导带电子的晶格散射过程.N型掺杂Si基Ge材料具有独特的双能谷(Γ能谷与L能谷)结构,它将通过以下两方面的竞争关系提高直接带导带底电子的占有率:一方面,处于Γ能谷的导带电子通过谷间光学声子的散射方式散射到L能谷;另一方面,处于L能谷的导带电子通过谷内光学声子散射以及二次谷间光学声子散射或者直接通过谷间光学声子散射的方式跃迁到Γ能谷.当掺杂浓度界于10~(17)cm~(-3)到10~(19)cm~(-3)时,适当提高N型掺杂浓度有利于提高直接带Γ能谷导带底电子占有率,进而提高Si基Ge材料直接带发光效率.     

A hybrid-phonon resonance in a quasi-two-dimensional nanostructure

The coefficient of absorption of electromagnetic radiation by a quasi-two-dimensional electron gas placed in an oblique magnetic field is found. The scattering of electrons by optical phonons is shown to lead to resonant absorption. The shape of the resonance peaks on the absorption curve is studied, and their doublet nature is demonstrated. Finally, the dependence of the resonance peaks on the angle between the magnetic field vector and the confinement plane is investigated. Zh. éksp. Teor. Fiz. 111, 1092–1106 (March 1997)     

Magnetic susceptibility and short-range order in iron pnictides: Anisotropic J1-J2 Heisenberg model

The electron spin relaxation times by piezoelectric and polar optical phonon scattering in GaAs are calculated using the formula derived from the projection-reduction method. The temperature, magnetic field, and electron density dependences of the relaxation time are investigated. The electrons are found to be scattered mostly by piezoelectric phonons at low temperatures and polar optical phonons at high temperatures. The electron density affects the magnetic field dependence of the relaxation time at low temperatures but have only slight affects at high temperatures.     

Electric-field dependence of the intersubband optical absorption in a semiconductor quantum well

We present theoretical results of intersubband linear optical absorption in the conduction band of a GaAsAlGaAs quantum well with an applied electric field taking into account the field dependent linewidth. Our analysis is based on the one electron density matrix formulation with intrasubband relaxation processes due to polar optical phonon scattering and tunneling of electrons. We show that (a) for an increasing electric field the absorption peak corresponding to the transition of states 1 → 2 is shifted higher in energy and (b) the peak amplitude increases if the Fermi level is fixed and decreases if the electron density in the well is fixed when an increasing electric field is applied. The linewidth broadening also reduces the peak absorption amplitude.     

吸收限附近非对称反射条件下X射线的异常透射

研究了原子吸收限附近非对称布拉格条件下完整平板晶体的X射线异常透射．当衍射主要由原子散射因子的虚部引起时，在严格的布拉格角处，晶体内部驻波的波节位于衍射原子面上，从而导致异常透射的发生．透射波主要来源于晶体内部坡印廷矢量指向晶体下表面（入射面为上表面）的波场．该波场的有效吸收系数随非对称因子a的增大而减小，所以整个晶体的透射系数随a的增大而增大．当原子散射因子的实虚部对衍射的贡献之比一定时，晶体内坡印廷矢量偏离色散面实部法向的程度随反射的非对称程度的增大而增大． 关键词：     

Orbital and spin magnetism and dielectric response of electrons in metals

A survey is given of the theory of orbital and spin magnetism of electrons in metals, and of the relation of this to dielectric response theory. In particular, the orbital magnetic behaviour of Bloch electrons in a static but spatially varying magnetic field is discussed. It is shown that the treatment of Hebborn and Sondheimer can be generalized to include this spatial dependence of the applied magnetic field and that the result may be written compactly in terms of the zero field canonical density matrix, or Green function.

It is further shown that the frequency dependence of both the orbital and spin susceptibility can be obtained, again from the density matrix, by calculating the current. The connection with neutron scattering is exhibited and for the case of nickel the way in which such experiments can lead to estimates of the role of the electron interactions is discussed.

The effect of a magnetic field on phonon spectra in metals is considered briefly. Finally it is suggested that it may be of interest to study the effect of the magnetic field on the periodic potential usually employed to calculate energy levels of electrons in magnetic fields. Some modifications of pair forces between ions is to be expected in very high fields.     

LO-phonon instability due to indirect interband absorption of a laser field in semiconductors

We investigate here the possibility of excitation and amplification of longitudinal optical (LO) lattice vibrations by electrons due to interband absorption of a laser field in semiconductors. We show that under certain conditions the phonon excitation rate may become greater than the rate of relaxation and the LO-phonon system may reach instability.     

Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method

Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system.     

Experimental aspects of synchrotron-Čerenkov radiation

Various features of synchrotron-?erenkov radiation are illustrated in the context of the following situations: (1) The passage of high energy electrons through gases, liquids, solids, and plasmas in the presence of magnetic fields. (2) The suppression of synchrotron X-rays from high energy electrons in the earth's atmosphere and extraterrestrial environs. (3) The detection of the real part of the Delbrück scattering amplitude. (4) Vacuum polarization effects on radiation by ultra-high energy electrons in intense magnetic fields. (5) Synchrotron-?erenkov radiation by charged particles heavier than electrons.     

Drag effect of one-dimensional electrons upon photoionization of D<Superscript>(−)</Superscript> centers in a longitudinal magnetic field

A theory is elaborated for the impurity photon drag effect in a semiconductor quantum wire exposed to a longitudinal magnetic field B directed along the axis of the quantum wire. The phonon drag effect is associated with the transfer of the longitudinal photon momentum to localized electrons in optical transitions from D^(?) states to hybrid-quantized states of the quantum wire, which is described by a confinement parabolic potential. An analytical expression for the drag current density is derived within the model of a zero-range potential in the effective mass approximation, and the spectral dependence of the drag current density is examined at different magnitudes of B and parameters of the quantum wire upon electron scattering by a system of impurities with short-range potentials. It is established that the spectral dependence of the drag current density exhibits a Zeeman doublet with a clear beak-shaped peak due to optical transitions of electrons from D^(?) states to states with the magnetic quantum number m=1. The possibility of using the photon drag effect in a longitudinal magnetic field for the development of laser radiation detectors is analyzed.     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Transient magnetoresponse of photoexcited electrons: Negative cyclotron absorption and evolution of Faraday angle

The transient magnetooptical response of electrons with partly inverted initial distribution produced by an ultrashort optical pulse near the optical phonon energy is studied theoretically. Transient cyclotron absorption and Faraday rotation of polarization plane are considered for bulk semiconductors (GaAs, InAs, and InSb) as well as for a GaAs-based quantum well. Damping of the response due to electron momentum relaxation associated with elastic scattering from acoustic phonons is taken into account in calculations, as well as the evolution of the electron distribution due to quasi-elastic energy relaxation at acoustic phonons and effective inelastic transitions accompanied by spontaneous emission of optical phonons. Nonstationary negative absorption in the cyclotron resonance conditions and peculiarities of Faraday rotation of the polarization plane associated with partial inversion of the initial distribution are considered. The possibility of transient enhancement of the probe field under cyclotron resonance conditions is indicated.     

First principle study of the structural and optoelectronic properties of cubic perovskites CsPbM3 (M=Cl, Br, I)

The highly accurate all electrons full potential linearized augmented plane wave method is used to calculate structural, electronic, and optical properties of cubic perovskites CsPbM₃ (M=Cl, Br, I). The theoretically calculated lattice constants are found to be in good agreement with the experimentally measured values. It is found that all of these compounds are wide and direct bandgap semiconductors with bandgap located at R-symmetry point, while the bandgap decreases from Cl to I. The electron densities reveal strong ionic bonding between Cs and halides but strong covalent bonding between Pb and halides. Optical properties of these compounds like real and imaginary parts of dielectric functions, refractive indices, extinction coefficients, reflectivities, optical conductivities, and absorption coefficients are also calculated. The direct bandgap nature and high absorption power of these compounds in the visible-ultraviolet energy range imply that these perovskites can be used in optical and optoelectronic devices working in this range of the spectrum.