Narrow Waveguide Based on Ferroelectric Domain Wall

Ferroelectric materials are spontaneous symmetry breaking systems that are characterized by ordered electric polarizations.Similar to its ferromagnetic counterpart,a ferroelectric domain wall can be regarded as a soft interface separating two different ferroelectric domains.Here we show that two bound state excitations of electric polarization(polar wave),or the vibration and breathing modes,can be hosted and propagate within the ferroelectric domain wall.In particular,the vibration polar wave has zero frequency gap,thus is constricted deeply inside ferroelectric domain wall,and can even propagate in the presence of local pinnings.The ferroelectric domain wall waveguide as demonstrated here offers a new paradigm in developing ferroelectric information processing units.     

铁电晶体畴壁增强非线性性质的研究

通过研究畴壁切伦科夫倍频,发现畴壁存在巨大增强的非线性系数.由此造成的畴壁“定域性”使其可以对非线性极化波产生相速度调制,进而影响切伦科夫倍频.提出并证实了极限切伦科夫倍频的存在,并分析了它和准相位匹配倍频产生的区别.     

Three‐Dimensional,Time‐Resolved Profiling of Ferroelectric Domain Wall Dynamics by Spectral‐Domain Optical Coherence Tomography

We apply here spectral‐domain optical coherence tomography (SD‐OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium‐doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ～ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3‐dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs’ polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD‐OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high‐speed SD‐OCT setup for the real‐time DW tracking upon ferroelectric domain switching under high external fields.     

Exact Solution of the Six-Vertex Model with Domain Wall Boundary Conditions. Critical Line between Ferroelectric and Disordered Phases

This is a continuation of the papers of Bleher and Fokin (Commun. Math. Phys., 268:223–284, 2006) and of Bleher and Liechty (Commun. Math. Phys., 286:777–801, 2009), in which the large n asymptotics is obtained for the partition function Z _n of the six-vertex model with domain wall boundary conditions in the disordered and ferroelectric phases, respectively. In the present paper we obtain the large n asymptotics of Z _n on the critical line between these two phases. The first author is supported in part by the National Science Foundation (NSF) Grant DMS-0652005.     

紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转

对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴壁运动所需要克服的退极化能和畴壁能,实现激光诱导畴反转。     

Erasable and unerasable correlations

We address the problem of removing correlation from sets of states while preserving as much local quantum information as possible. We prove that states obtained from universal cloning can only be decorrelated at the expense of complete erasure of local information (i.e., information about the copied state). We solve analytically the problem of decorrelation for two qubits and two qumodes (harmonic oscillators in Gaussian states), and provide sets of decorrelable states and the minimum amount of noise to be added for decorrelation.     

Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy

The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process (TIP-FeCAP) and the innovated integrated process (IIP-FeCAP) are investigated by piezoresponse force microscopy (PFM). The IIP-FeCAP side wall exhibits fine and clear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9V and -9V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.     

Potential Images of Ferroelectric Domain Structures Formed by Electron Beam in Lithium Niobate Crystals

Ferroelectric domain structures formed by an electron beam in lithium niobate crystals are studied using low-voltage SEM microscopy. The structures are formed in crystals with different conductivity, including samples with high-resistance congruent composition (CLN) and samples with conductivity increased by reductive annealing (RLN). The potential nature of the contrast of the domain structures observed in the secondary electron mode depending on the conductivity of the samples and the direction of spontaneous polarization of the domains is analyzed. It is assumed that the domain contrast in CLN crystals is associated with long-lived charges localized near domain walls and in the irradiated areas. The recorded domain structures in the CLN crystals are visualized on polar and nonpolar cuts. In the RLN crystals with improved conductivity compared to CLN, the potential contrast of the periodic domain structures is found only on the polar cuts, where vector P_s of the domains is perpendicular to the irradiated surface. This contrast is likely because the field of the spontaneous electric polarization charges influences the secondary electrons.     

Arctic Curves of the Twenty-Vertex Model with Domain Wall Boundaries

We use the tangent method to compute the arctic curve of the Twenty-Vertex (20V) model with particular domain wall boundary conditions for a wide set of integrable weights. To this end, we extend to the finite geometry of domain wall boundary conditions the standard connection between the bulk 20V and 6V models via the Kagome lattice ice model. This allows to express refined partition functions of the 20V model in terms of their 6V counterparts, leading to explicit parametric expressions for the various portions of its arctic curve. The latter displays a large variety of shapes depending on the weights and separates a central liquid phase from up to six different frozen phases. A number of numerical simulations are also presented, which highlight the arctic curve phenomenon and corroborate perfectly the analytic predictions of the tangent method. We finally compute the arctic curve of the Quarter Turn symmetric Holey Aztec Domino Tiling (QTHADT) model, a problem closely related to the 20V model and whose asymptotics may be analyzed via a similar tangent method approach. Again results for the QTHADT model are found to be in perfect agreement with our numerical simulations.

     

(Pb,La)Ti03铁电薄膜的太赫兹时域光谱实验研究

利用THz时域光谱技术(THz-TDS)探测了制作在SiO2/Si衬底上的(Pb,La)TiO3铁电薄膜的频谱响应,获得了三种不同烧结温度的掺镧钛酸铅(PLT)薄膜的THz频谱.根据实验数据计算得到了PLT薄膜在0.2～3 THz频段内的吸收系数、折射率和复介电常数,并对比了三种不同烧结温度的PLT薄膜的实验计算结果.实验结果表明,三种PLT薄膜在所测频段内均有较强吸收,且都在1.5 THz处有一个明显的吸收峰,在2.25 THz处有一个相对较弱的吸收峰.     

原位Raman光谱技术应用于铁电陶瓷畴变与电疲劳研究

基于铁电陶瓷材料90°畴变导致Raman光谱变化的原理,自行设计并搭建了铁电材料原位测试分析和数据采集系统,通过与Raman光谱仪的联用,利用特制的样品旋转装置,从实验上证实在外加电场作用下铁电材料中的90°畴变使平均电畴的择优取向发生改变,从而导致Raman光谱强度的变化,利用铁电材料原位测试分析和数据采集系统,实现...     

The Self-Dual Gauge Fields and the Domain Wall Fermion Zero Modes

A new type of gauge fixing of the Coulomb gauge domain wall fermion system that reduces the fluctuation of the effective running coupling and the effective mass of arbitrary momentum direction including the region outside the cylinder cut region is proposed and tested in the 16³ × 32 × 16 gauge configurations of RBC/UKQCD collaboration. The running coupling at the lowest momentum point does not show infrared suppression and compatible with the experimental data extracted from the JLab collaboration. The source of the fluctuation of the effective mass near momentum p = 0.6 GeV region is expected to be due to the domain wall fermion zero modes.     

Propagator of the Lattice Domain Wall Fermion and the Staggered Fermion

We calculate the propagator of the domain wall fermion (DWF) of the RBC/UKQCD collaboration with 2 + 1 dynamical flavors of 16³ × 32 × 16 lattice in Coulomb gauge, by applying the conjugate gradient method. We find that the fluctuation of the propagator is small when the momenta are taken along the diagonal of the 4-dimensional lattice. Restricting momenta in this momentum region, which is called the cylinder cut, we compare the mass function and the running coupling of the quark-gluon coupling α _s,g1(q) with those of the staggered fermion of the MILC collaboration in Landau gauge. In the case of DWF, the ambiguity of the phase of the wave function is adjusted such that the overlap of the solution of the conjugate gradient method and the plane wave at the source becomes real. The quark-gluon coupling α _s,g1(q) of the DWF in the region q > 1.3 GeV agrees with ghost-gluon coupling α _s (q) that we measured by using the configuration of the MILC collaboration, i.e., enhancement by a factor (1 + c/q ²) with c ≃ 2.8 GeV² on the pQCD result. In the case of staggered fermion, in contrast to the ghost-gluon coupling α _s (q) in Landau gauge which showed infrared suppression, the quark-gluon coupling α _s,g1(q) in the infrared region increases monotonically as q→ 0. Above 2 GeV, the quark-gluon coupling α _s,g1(q) of staggered fermion calculated by naive crossing becomes smaller than that of DWF, probably due to the complex phase of the propagator which is not connected with the low energy physics of the fermion taste. An erratum to this article can be found at     

InGaN基发光二极管和激光二极管

在InGaN发光二极管中,尽管存在着大量的位错,但其效率还是相当高的.用InGaN作为有源层是很重要的.在InGaN基LED的情况下,为产生光发射需要较高的激发功率.横向大面积外延生长的GaN激光二极管(LDs)是在厚的GaN衬底上外延制备成的.在温度250℃、30mW输出的连续工作状态下,其工作电流小于42mA,600℃、30mW输出的连续工作状态下的寿命约为15 000小时.这些结果表明,螺旋位错密度的降低延长了激光二极管的寿命.此外,良好的散热也是很重要的.     

Domain Wall Migration in 3-d in the Presence of Diffusing Impurities

A new three-dimensional simulation procedure was developed for domain wall (grain boundary, APB, magnetic, etc.) migration in the presence of diffusing impurities. The simulation is based upon a kinetic Monte Carlo algorithm and an extended Ising model, incorporating both conserved and non-conserved dynamics. The simulations show a dependence of the domain wall velocity on driving force which is very similar to that seen in 2-d and in qualitative agreement with experiment. That is, the presence of a low mobility regime at small driving force and an abrupt transition to a high mobility regime at larger forces, under some conditions, and a continuous, non-linear dependence of the velocity on the force in others. The main qualitative difference between the 2-d and 3-d simulation results is in how the domain wall roughness depends on driving force. The velocity-driving force relation is not consistent with classic continuum models, but may be described, in the high velocity regime, by a theory based upon a discrete version of these models.     

Domain Wall Migration in 3-d in the Presence of Diffusing Impurities

A new three-dimensional simulation procedure was developed for domain wall (grain boundary, APB, magnetic, etc.) migration in the presence of diffusing impurities. The simulation is based upon a kinetic Monte Carlo algorithm and an extended Ising model, incorporating both conserved and non-conserved dynamics. The simulations show a dependence of the domain wall velocity on driving force which is very similar to that seen in 2-d and in qualitative agreement with experiment. That is, the presence of a low mobility regime at small driving force and an abrupt transition to a high mobility regime at larger forces, under some conditions, and a continuous, non-linear dependence of the velocity on the force in others. The main qualitative difference between the 2-d and 3-d simulation results is in how the domain wall roughness depends on driving force. The velocity-driving force relation is not consistent with classic continuum models, but may be described, in the high velocity regime, by a theory based upon a discrete version of these models.