单晶硅化学机械抛光划痕演变研究

化学机械抛光法是制作超光滑单晶硅镜片的常用工艺,抛光过程中的各类杂质粒子经常会导致加工表面产生划痕,降低镜片的表面质量。为系统研究不同晶向单晶硅表面塑性划痕与抛光液中杂质的关系,设计了金刚石微粉掺杂抛光Si(111)、Si(110)和Si(100)晶面的实验。利用轮廓仪测量了不同晶向、不同掺杂浓度下的划痕形貌,并通过计算载荷归一化后的划痕宽度分布、划痕深度分布、粗糙度和二维功率谱密度来评估划痕形貌。结果显示,抛光液中杂质粒子粒径、硅片表面的划痕宽度均服从正态分布。随着杂质粒子浓度的增加,划痕形貌从非周期性特征转变为周期性波动,粗糙度出现突跃点。此外,在同浓度金刚石微粉掺杂情况下,Si(110)面在划痕产生初期有更好的杂质粒子容忍度。     

新世纪的绿色环保能源

 我们伴随着日益严重的世界性能源短缺和环境污染走进了２１世纪。原油价格不断上涨的浪潮还在升温,而地球上的化石燃料如石油、煤炭等这些不可再生能源的储量在快速减少。那么,寻找无污染且可持续发展的绿色环保能源来取代化石燃料已是人类的共同课题之一。按照我国的２１世纪发展计划,即到２０５０年进入中等发达国家的行列,那么,我国那时的年人均ＧＤＰ要达到５０００至６０００美元（美国、日本２０世纪８０年代的水平）。设想那时的单位产值能耗可降至０．４１吨标准煤／千美元ＧＤＰ,可以推算出２０５０年一次能源总需求量约为３４．４亿吨标准煤,按１６亿人口计算,人均约为２．１５吨标准煤。     

高准确度玻璃光学元件的CMP技术研究

依据化学机械抛光（Chemical Mechanical Polishing,CMP）加工玻璃光学元件的原理,通过对抛光运动机理的理论分析,提出了抛光垫的磨削均匀性对光学元件面形的影响,并设计了新的工艺流程.通过工艺试验,完成了高准确度玻璃光学元件的CMP加工,获得了表面质量N<0.2,Rq<0.3 nm的玻璃光学元件.     

化学气相沉积SiC材料超光滑表面纳米加工

利用传统光学加工方法,采用陶瓷磨盘和金刚石微粉对国产化学气相沉积(CVD) SiC进行了粗磨、细磨加工;然后,利用颗粒直径从4 μm到1 μm的金刚石研磨膏逐级进行抛光,发现SiC表面存在纳米级划痕;最后,改用颗粒直径为20 nm氧化铝纳米颗粒的碱性水溶液进行抛光,表面粗糙度达到0.6 nm(RMS),表面纳米级划痕得到很好改善,获得了较高表面质量的超光滑表面。     

化学气相沉积SiC材料超光滑表面纳米加工

 利用传统光学加工方法，采用陶瓷磨盘和金刚石微粉对国产化学气相沉积(CVD) SiC进行了粗磨、细磨加工；然后，利用颗粒直径从4 μm到1 μm的金刚石研磨膏逐级进行抛光，发现SiC表面存在纳米级划痕；最后，改用颗粒直径为20 nm氧化铝纳米颗粒的碱性水溶液进行抛光，表面粗糙度达到0.6 nm(RMS)，表面纳米级划痕得到很好改善，获得了较高表面质量的超光滑表面。     

磁流变抛光液的配制及其抛光稳定性

磁流变液是一种分散体系,通过对分散体系稳定性的研究,并结合磁流变抛光的实际需求,确定了磁流变抛光液添加组分,配制出了适合于光学加工的水基磁流变抛光液。所配制的磁流变液初始粘度仅为0.2Pa·s,利用磁流变仪检测所配制磁流变液在剪切率为1s-1,磁场强度为0.35T时,剪切应力达42.5kPa。利用所配制的磁流变抛光液分别对K9玻璃和Si材料进行抛光,经过2h持续抛光,K9玻璃和Si材料去除函数的峰值去除量相对变化率分别为0.15%和0.22%,体积去除量相对变化率分别为1%和0.88%,去除函数的峰值去除率分别达到4.83μm/min和1.376μm/min。结果验证了所配制的抛光液具有极好的稳定性以及较高的去除效率,能够保证抛光材料的快速去除和高效收敛。     

纳米材料的表面增强拉曼散射增强机理研究进展

表面增强拉曼散射(SERS)技术具有高灵敏度、高分辨率、无损检测及不需要预处理等优点,已成为一种可以实现定性定量分子检测的有力工具,使目标分析物信号放大的痕量检测技术,甚至能够在分子水平上提供丰富的结构信息。虽然SERS增强机理一直存在争议,但目前被广泛接受的增强机理包括物理增强(电磁场增强)和化学增强(主要为电荷转移的贡献)。随着近年来金属、非金属等诸多材料应用于SERS领域,诸多学者对于影响SERS基底的增强因素产生广泛兴趣,对于SERS增强机理的研究具有重要意义。综述中主要从SERS电磁增强机理、化学增强机理及两者的协同机理三个方面对SERS增强机理进行阐述,分析哪些因素影响基底增强效应,为SERS增强机理的分析提供一些参考。同时提出不同基底结构在增强机理分析过程中面临的问题：(1)在电磁增强机理中,单一贵金属基底因其“热点”分布不均匀、不可控因素导致SERS灵敏度和重复性差等因素,对SERS电磁增强机理影响效果较大;(2)在化学增强机理中,单一半导体材料由于价格实惠、材料性能较稳定、表面易于改性等优点被广泛应用于SERS基底、由于增强能力较低等因素、对SERS化学增强效果不明显...     

基于机械-化学的方法在硅表面制造功能化结构

"利用机械与化学结合的方法在芳烃重氮盐溶液中用金刚石刀具切削硅片,使得芳香烃分子和硅之间以共价键连接,实现了对硅片的"成形并功能化"的一步完成．研究了在大气环境如何利用金刚石刀具在硅表面加工出表面质量较好的微结构,为下一步在溶液中"成形并功能化"硅提供好的基底．在溶液中对硅表面进行可控自组装实验,初步研究了切削速度和组装时间对切削处生成自组装膜质量的影响,总结出较适合膜生长的参数．用X射线光电子能谱对自组装膜进行了检测,用扫描电子显微镜和原子力显微镜对自组装膜的表面形貌进行了表征,并用原子力显微镜对自     

化学机械抛光中纳米颗粒的作用分析

化学机械抛光（chemical mechanical polishing, CMP）是用于获取原子级平面度的有效手 段.目前，CMP的抛光液通常使用纳米级颗粒来加速切除和优化抛光质量.这类流体的流变性 能必须考虑微极性效应的影响.对考虑微极性效应的运动方程的求解，有助于了解CMP的作用 机理.数值模拟表明，微极性将提高抛光液的等效黏度从而在一定程度上提高其承载能力， 加速材料去除.这在低节距或低转速下尤为明显，体现出其具有尺寸依赖性.通过改变抛光液 中粒子的微极性，用实验研究了微极性效应对CMP中材料去除速率的影响，证明了分析的合 理性. 关键词： 化学机械抛光 微极流体 抛光液 流变特性 材料去除速率     

化学处理增强光学材料的抗激光破坏强度

报道了用化学处理方法提高光学材料的抗激光破坏强度的实验结果,化学处理使和Ｋ２玻璃的激光损伤阈值分离提高３倍和４倍,对晶体和熔石英的化学处理也得取和较好的工对加固机理作了分析。     

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge_2Sb_2Te_5

The effect of iron trichloride （FeC13） on chemical mechanical polishing （CMP） of Ge2Sb2Te5 （GST） film is inves- tigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeC13 concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H2O2-based slurry. This polish- ing rate trends are inversely correlated with the contact angle data of FeCl3-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope （AFM） and optical microscope （OM） are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as Ecorr and Icorr to analyze chemical reaction between FeCl3 and GST surface. Finally, it is verified that slurry with FeCl3 has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature （RT） tests.     

A nano-scale mirror-like surface of Ti–6Al–4V attained by chemical mechanical polishing

Metal Ti and its alloys have been widely utilized in the fields of aviation, medical science, and micro-electromechanical systems, for its excellent specific strength, resistance to corrosion, and biological compatibility. As the application of Ti moves to the micro or nano scale, however, traditional methods of planarization have shown their short slabs.Thus, we introduce the method of chemical mechanical polishing(CMP) to provide a new way for the nano-scale planarization method of Ti alloys. We obtain a mirror-like surface, whose flatness is of nano-scale, via the CMP method. We test the basic mechanical behavior of Ti–6Al–4V(Ti64) in the CMP process, and optimize the composition of CMP slurry.Furthermore, the possible reactions that may take place in the CMP process have been studied by electrochemical methods combined with x-ray photoelectron spectroscopy(XPS). An equivalent circuit has been built to interpret the dynamic of oxidation. Finally, a model has been established to explain the synergy of chemical and mechanical effects in the CMP of Ti–6Al–4V.     

抛光垫磨损非均匀性研究

抛光垫是化学机械抛光的重要组成部分,其磨损的非均匀性对被加工工件面型精度和抛光垫修整有重要影响。基于直线摆动式抛光方式,研究了抛光过程中抛光垫与工件的相对运动,建立了抛光垫磨损模型,分析了抛光工艺参数对抛光垫磨损及均匀性的影响。研究结果表明,工件与抛光垫的转速比为1.11,正弦偏心直线摆动形式,摆动幅度系数为2,摆动频率系数在0.1~0.2之间,抛光垫表面磨损更均匀,并根据抛光垫表面磨损特性优化了抛光垫形状。优化的抛光垫具有更好的面型保持性,延长了修整间隔,为抛光工艺设计提供理论指导。     

Investigation of chemical mechanical polishing of zinc oxide thin films

Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 Å (as compared to the initial roughness of 26 ± 6 Å) were obtained under optimized conditions with removal rates as high as 670 Å/min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.     

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid.The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing.By using zeta potential analyzer,particle size analyzer,horizon profilometer,thermogravimetric analysis and Fourier transform infrared spectroscopy,the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared.Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.     

超光滑加工的后置处理算法研究

为了精确控制超光滑加工过程中磨头的运动轨迹,从而实现光学元件材料去除的均匀稳定,研究了超光滑加工的后置处理算法。分析了超光滑加工工艺的特点和相应的超光滑机床的机械结构,建立了机床的坐标系统,构造了机床的运动学模型。对于光学元件母线为任意平面曲线的情况,研究了磨头运动轨迹的等误差直线逼近算法。在曲率半径为290mm,相对口径为1∶2.9的凹球面上进行了超光滑加工实验。结果表明,利用所述算法可以精确地控制磨头的运动轨迹,从而保证材料去除的稳定性。     

Surface modification of ceria nanoparticles and their chemical mechanical polishing behavior on glass substrate

To improve their chemical mechanical polishing (CMP) performance, ceria nanoparticles were surface modified with γ-aminopropyltriethoxysilane (APS) through silanization reaction with their surface hydroxyl group. The compositions, structures and dispersibility of the modified ceria particles were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), laser particle size analyzer, zeta potential measurement and stability test, respectively. The results indicated that APS had been successfully grafted onto the surface of ceria nanoparticles, which led to the modified ceria nanoparticles with better dispersibility and stability than unmodified ceria particles in aqueous fluids. Then, CMP performance of the modified ceria nanoparticles on glass substrate was investigated. Experimental results showed that the modified ceria particles exhibited lower material removal rate (MRR) but much better surface quality than unmodified ceria particles, which may be explained by the hardness reduction of ceria particles, the enhancement of lubrication of the particles and substrate surfaces, and the elimination of the agglomeration among the ceria particles.     

Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate

Magnesium oxide (MgO) single crystal is an important substrate for high temperature superconductor, ferroelectric and photoelectric applications. The function and reliability of these devices are directly affected by the quality of polished MgO surface because any defect on the substrate, such as pit or scratch, may be propagated onto device level. In this paper, chemical mechanical polishing (CMP) experiments were conducted on MgO (1 0 0) substrate using slurry mainly comprised of 1-hydroxy ethylidene-11-diphosphonic acid (HEDP) and silica or ceria particles. Through monitoring the variations of the pits topography on substrate surface, generation and removal mechanism of the pits were investigated. The experimental results indicate that the pits were first generated by an indentation or scratch caused by particles in the slurry. If the rate of chemical etching in the defect area is higher than the material removal rate, the pits will grow. If chemical reaction in the defect area is slower than the material removal rate, the pits will become smaller and eventually disappear. Consequently, these findings may provide insight into strategies for minimizing pits during CMP process.     

基于压力补偿原理的抛光面形快速收敛技术

为解决强激光系统中大口径光学元件抛光面形精度收敛困难的问题,提出了一种基于压力补偿原理的抛光面形快速收敛技术。利用独特的抛光垫修整技术,将抛光垫表面修整成特定形状,使工件与抛光垫的接触面产生不均匀的压力分布,并结合精确的抛光转速控制,以加快工件面形精度的收敛速度。实验结果表明,将抛光垫修整成微凸面形,可以有效避免抛光中元件过早塌边问题,能将大口径平面元件的初抛时间从数天缩短到6 h以内,元件面形精度提高到1个波长左右。     

Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate

The sapphire substrates are polished by traditional chemical mechanical polishing (CMP) and ultrasonic flexural vibration (UFV) assisted CMP (UFV-CMP) respectively with different pressures. UFV-CMP combines the functions of traditional CMP and ultrasonic machining (USM) and has special characteristics, which is that ultrasonic vibrations of the rotating polishing head are in both horizontal and vertical directions. The material removal rates (MRRs) and the polished surface morphology of CMP and UFV-CMP are compared. The MRR of UFV-CMP is two times larger than that of traditional CMP. The surface roughness (root mean square, RMS) of the polished sapphire substrate of UFV-CMP is 0.83 Å measured by the atomic force microscopy (AFM), which is much better than 2.12 Å obtained using the traditional CMP. And the surface flatness of UFV-CMP is 0.12 μm, which is also better than 0.23 μm of the traditional CMP. The results show that UFV-CMP is able to improve the MRR and finished surface quality of the sapphire substrates greatly. The material removal and surface polishing mechanisms of sapphire in UFV-CMP are discussed too.