Differential dislocations in martensite-type interphase boundaries

The tensor describing the density of differential dislocations, formed on interphase surfaces with a martensite transformation and on boundaries of mechanical twins, is calculated. Differential dislocations arise due to the transformation of Burgers vectors and dislocation lines in the process of their succession from the parent crystal. The dependence of the density of differential dislocations on the starting dislocation structure, transformation geometry, and the transformation matrix of the lattice with the transformation is demonstrated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 76–79, June, 1981.     

Frenkel model of pair of dislocations

The graphical method of solution given in the paper [1] is used to study a pair of dislocations with opposite signs of the Burgers vectors in the Frenkel model of a crystal. The dependence of the force between the dislocations on their mutual distance is determined.     

On the measurement of dislocation core distributions in a GaAs/ZnTe/CdTe heterostructure by high-resolution transmission electron microscopy

Tensorial maps of misfit dislocations at the strained GaAs-ZnTe-CdTe interfacial zone are reconstructed by use of digital processing of high-resolution transmission electron micrographs. Large distortions of the crystal lattice around Lomer dislocations are measured using the geometric phase technique. The integration of the dislocation distribution tensor field over a dislocation core region gives the in-plane components of their Burgers vectors. The accuracy of the method for the dislocation map reconstruction is tested by comparing the theoretical values of the so-called true Burgers vectors with those obtained from the integration of tensorial maps.     

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

Contrasts of dislocations in the sub-surface region of the Si-face of a 4H-SiC wafer were observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry. Basal-plane dislocations show very characteristic contrast depending on their Burgers vectors, running directions, and types of dislocations, whether they are screw dislocations, C-core edge dislocations, or Si-core edge dislocations. The rules for contrasts of basal-plane dislocations are summarized. It is shown that by observing those contrasts at fixed diffraction conditions, Burgers vectors of the basal-plane dislocation can be identified without performing a g?·?b analysis in some cases. Threading edge dislocations also have very characteristic contrasts depending on the angles between the projected g and their Burgers vectors. It is shown that Burgers vectors of threading edge dislocations can be determined uniquely by observing their characteristic contrasts without performing g?·?b analysis. Contrast mechanisms for these dislocations in grazing-incidence X-ray topography are discussed.     

Twin-transformed lattice defects in γ-TiAl

We study the transformation of lattice defects in γ-TiAl upon intersection by deformation twins. A faulted dipole is chopped forming a dislocation loop faulted on the cube plane of the twin; faulted dipoles and twin loops may shrink at different rates. Dislocations with 1/2<110] and <011] Burgers vectors gliding on octahedral planes are transformed into configurations with low mobility on {010} plane. Elementary mechanisms involved in the transformation are considered and a pole mechanism for twin growth at forest dislocations is proposed.     

Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy

High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (～0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.     

Reprise: partial chemical strain dislocations and their role in pinning dislocations to their atmospheres

A correct solution for a dislocation atmosphere is provided using Hirth's Standard Model, confirming the errors in Hirth and Lothe. Contrary to what is given there, concentration changes in Cottrell atmospheres reduce an edge dislocation's stress and its elastic energy, thereby reducing the magnitude of the concentration changes. The chemical and elastic strain fields from Cottrell atmospheres are again shown to behave as partial dislocations with variable Burgers vectors that are not crystal translation vectors. The reality of partial dislocations provides a simpler explanation for pinning of dislocations by atmospheres. Much of the literature on dislocation properties in solid solutions should be re-examined.     

不同对称性下晶界结构演化及微观机理的晶体相场法研究

采用晶体相场法研究了单轴拉伸下三角相双晶变形过程及机理, 并重点分析了小角对称与非对称晶界和大角对称与非对称晶界在变形过程中的演化及微观机理, 变形过程中应力方向与初始晶界方向平行. 结果表明, 小角对称晶界由柏氏矢量夹角呈60°的两种刃型位错组成, 变形过程中不同类型的位错运动方向相反, 并各自与另一晶界上同一类型位错相互吸引以致部分位错发生湮没; 小角非对称晶界上的位错类型单一, 在应力作用下先沿水平方向攀移, 后各自分解成柏氏矢量约呈120°的两位错, 并通过位错运动和湮没最终形成理想单晶; 大角晶界在应力的作用下先保持水平状态而后锯齿化并发射位错, 伴随着位错运动和湮没, 最终大角非对称晶界发生分解, 而大角对称晶界则重新平直化, 表明大角对称晶界比大角非对称晶界更稳定, 这与实验和分子动力学模拟结果一致. 关键词： 晶体相场 双晶 晶界 对称性     

α—SiC晶体中的位错

用腐蚀法和X射线形貌术研究了α-SiC晶体中的位错。所用的腐蚀剂为熔融氢氧化钾。证实了尖底蚀坑与位错的一一对应关系。由于[0001]方向的螺型位错的Burgers矢量比刃型位错的Burgers矢量大得多,故可从蚀坑的深浅来判别螺型位错和刃型位错。给出了蚀坑形状和多型体晶体结构的对应关系。研究了表面生长蜷线的形态与SiC晶体中的位错及位错运动的关系。X射线形貌图显示了α-SiC晶体中相当数量的位错处于基面C面上。生长位错从晶体“根部”成核并随着晶体生长前沿的向前推进而延伸,因而位错线的方向常常沿[101O]和[1120]方向。将腐蚀法和X射线形貌术结合起来才能全面显示α-SiC晶体中的位错。 关键词：     

应用反射光双折射貌相法观察旋光性晶体锗酸铋中的位错及亚晶界

本文对具有强旋光晶体锗酸铋(Bi₁₂GeO₂₀)进行了光双折射貌相的研究,发现采用反射偏光显微镜可以完全抵消晶体的自然旋光性并获得良好效果。观察了锗酸铋晶体中位错及亚晶界的双折射象。确定了位错的柏格斯矢量为1/2〈111〉,〈100〉及〈110〉。 关键词：     

Studies of threading dislocations in Nb(011) films

We obtain strain contrast in low-energy electron microscopy, by dark-field imaging of the strain-sensitive variants of a surface reconstruction. This is employed to make visible the strain fields of dislocations in Nb(011) thin single-crystal films. The strain field symmetries reveal the dislocation Burgers vectors and identify the existence of [111] a /2 and [100] a Burgers vectors for threading dislocations in these epitaxial materials. The contrast also allows interfacial and screw dislocations to be imaged.     

Dislocations and internal length measurement in continuized crystals. II. Closed teleparallelism

The Burgers field responsible for dislocations in a continuized crystal is represented by the torsion tensor of a teleparallel connection, metric with respect to the internal length measurement metric tensor. Lattice lines in a continuized dislocated monocrystal are represented by geodesics of the teleparallel connection, and the internal length measurement along these geodesics is analyzed. The closed teleparallelism responsible for uniformly dense distributions of dislocations is discussed, and equations describing slip surfaces for such distributions of dislocations are formulated. The Galilei-like character of the geometry describing uniformly dense distributions of dislocations is pointed out.     

LiNbO3晶体中包裹物和位错的X射线形貌研究

用X射线透射扫描形貌方法研究了LiNb0₃晶体中的包裹物和位错。在实验中发现了包裹物的相应于不同衍射矢量的X射线形貌与基于各向同性理论预言的形貌之间存在分歧,这被解释为弹性各向异性效应。同时还观察到Burgers矢量为最短点阵平移矢量1/3的纯刃型位错和次短点阵平移矢量1/3<0111>的纯螺型位错,以及由该螺型位错组成的纯扭转晶界。 关键词：     

Orientational effect of the dynamical interaction of circular dislocation loops with a moving edge dislocation

The glide of an edge dislocation in a crystal containing circular dislocation loops is studied theoretically. An analytical expression is obtained for the drag force exerted on a dislocation by various types of dislocation loops, and it is shown that this force depends significantly on the orientation of the Burgers vector of immobile dislocation loops with respect to the gliding dislocation line. The F _‖/F _⊥ ratio of the drag force for the parallel orientation of the Burgers vectors of the loops with respect to the gliding dislocation line (F _‖) and the drag force for the perpendicular orientation (F _⊥) is equal to K(v/c)², where v is the velocity of the dislocation; c is the velocity of acoustic waves in the crystal; and K is a dimensionless coefficient, whose value is of the order of the ratio of the concentrations of dislocation loops with parallel and perpendicular orientations of the Burgers vector.     

Dislocations and internal length measurement in continuized crystals. I. Riemannian material space

Distributions of dislocations creating point defects are considered. These point defects are described by a metric tensor, which supplements a Burgers field responsible for dislocations. The metric tensor depends on the distribution of dislocations and defines a Riemannian geometry of the material space of a continuized crystal and thus an internal length measurement in this crystal. The dependence of the distribution of dislocations on the existence of point defects created by these dislocations is modeled by treating the Burgers field as a field defined on the Riemannian material space. Field equations, following from geometric identities, are formulated as balance equations on this Riemannian space and their source terms, responsible for interactions of dislocations and point defects, are identified.     

On the magnetic properties of dislocations in silicon

The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the 60° dislocations are coupled along limited segments giving rise to superparamagnetic resonance.     

Quasidipoles in the basal plane of hexagonal zinc

The total energy of a system of two straight infinite and parallel dislocations is studied with all possible combinations of Burgers vectors (quasidipoles) in the basal plane of anisotropic zinc. The stable configurations of quasidipoles are found and the binding energy calculated for various types of quasidipoles.     

Secondary dislocation structures in a Ni–TiN system from the GMS and O-lattice theory

The preferred state in an interface is the key to evaluating misfit strain, especially for the interphase interfaces in secondary preferred state. The structure of good matching site (GMS) in a GMS clusters offers a guidance for the preferred state, especially for identifying the coincidence site lattice in two dimension for secondary preferred state and the Burgers vectors in a large misfit system. Here, we combine the GMS with O-lattice theory to calculate the secondary dislocation structure in the habit planes of the type II and III TiN precipitates in a Ni–TiN system. We find that under a slight elastic strain, the type III habit plane contains a single set of secondary dislocations, consistent with the experimental observation. The type II habit plane contains three sets of secondary dislocations, two of which can be relaxed to be nearly parallel and another of which may be invisible in diffraction contrast due to its short Burgers vector. The present study provides a reasonable interpretation to the observed interfacial dislocations, and also suggests Burgers vectors for the dislocations that are not determined experimentally.     

Zigzag lines in a (001)Si low-angle twist boundary

A low angle twist boundary formed by bonding an ultrathin (001) silicon film onto a (001) silicon wafer is investigated using two-beam transmission electron microscopy to identify positively zigzag lines which separate large interfacial regions formed by square networks of 1/2? 110 ? screw misfit dislocations. An approach to the elastic field of a zigzag line is proposed from the repetitive use of angular dislocations added to a ribbon-like uniform distribution of infinitesimal dislocations parallel to a family of pure screw misfit dislocations. Theoretical and experimental images of successive triple nodes are compared to derive the unique set of Burgers vectors attached to a zigzag line. In principle, this approach can be applied to any elongated hexagonal mesh of a dislocation network.     

Characterization of dislocation interactions in olivine using electron tomography

We have investigated by electron tomography, in a transmission electronic microscope, the interactions between dislocations in olivine single crystals and polycrystals deformed in axial compression at T < 1000 °C (T < 0.5T_m). Dislocations are mostly of the [0?0?1] type, except in the polycrystal where [1?0?0] and [0?0?1] dislocations have been activated. A few 〈1?0?1〉 junctions have been found and characterized. Many collinear interactions have been identified either involving direct interactions between crossing dislocations of opposite Burgers vectors or indirect interactions between dislocations gliding in parallel planes and sessile dislocation loops. We suggest that collinear interaction, already identified as the primary source of strain hardening in FCC metals, is the main dislocation interaction mechanism in olivine deformed at temperatures below 1000 °C.