ZnO-based deep-ultraviolet light-emitting devices

Deep-ultraviolet(DUV) light-emitting devices(LEDs) have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_(1-x)O and Be_xZn_(1-x)O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.     

纤锌矿BexZn1-xO合金能隙弯曲系数的第一原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 对纤锌矿Be_xZn_1-xO合金进行能隙特性、弯曲系数和结构参数的计算. 结果表明: Be_xZn_1-xO合金的能隙和弯曲系数都随Be掺杂组分的增大而增大. 通过修正Be_xZn_1-xO合金的能隙值得知其合金弯曲系数b为6.02 eV, 这与实验值接近. 纤锌矿Be_xZn_1-xO合金的能隙弯曲系数过大主要来源于体积形变和电荷转移的贡献. 文中还分析了Be_xZn_1-xO合金的晶格常数、 平均键长和平均次近邻原子距离与Be组分的关系.     

纤锌矿BeO掺Cd的电子结构与能带特性研究

采用基于密度泛函理论平面波赝势方法, 对纤锌矿BeO掺Cd的Be_1-xCd_xO合金进行电子结构与能带特性研究. 结果表明: Be_1-xCd_xO的价带顶始终由O 2p电子态决定, 而导带底由Be 2s和Cd 5s的电子态决定.随着Be_1-xCd_xO合金的Cd掺杂量增加, Cd 4d与O 2p的排斥效应逐渐加强, 同时Be_1-xCd_xO的带隙逐渐变小, 出现"直接-间接-直接"的带隙转变. 为了使理论值与实验值相一致, 对Be_1-xCd_xO带隙进行修正, 并分析了纤锌矿BeO-ZnO-CdO三元合金的带隙和弯曲系数与晶格常数的关系.     

Effect of Sm doping into CuInTe_2 on cohesive energy before and after light absorption

The effects of Sm doping into CuInTe_2 chalcopyrite on the cohesive energy before and after light absorption are systematically investigated by the empirical electron theory(EET) of solids and molecules.The results show that the static energy of CuIn_(1-x)Sm_xTe_2 decreases with Sm content increasing due to the valence electronic structure modulated by doping Sm into CuIn_(1-x)Sm_xTe_2.The calculated optical absorption transition energy from the static state to the excited energy level in CuIn_(1-x)Sm_xTe_2 accords well with the experimental absorption bandgap of CuIn_(1-x)Sm_xTe_2.Moreover,it is found that the energy bandgap of CuIn_(1-x)Sm_xTe_2 is significantly widened with Sm content increasing due to its special valent electron structure,which is favorable for enhancing the light absorption in a wider range and also for the potential applications in solar cells.     

CdSexS1-x电子学结构及光学性质的第一性原理研究

CdSe是Ⅱ-Ⅵ族中重要的半导体材料,一定条件下可与CdS形成无限固溶体CdSexS1-x(0≤x≤1)。CdSexS1-x在薄膜太阳电池及光电器件等领域具有重要的应用,对CdSexS1-x的电子学结构和光学性质进行研究有助于进一步提高其在光电器件等方面的应用。基于第一性原理,采用平面波超软赝势方法,计算了CdSexS1-x的电子学结构及光学性质,并将计算结果与实验进行了对比。结果表明,CdSexS1-x的晶格常数随着Se组分的增加呈线性增大趋势,态密度向低能级方向移动,禁带宽度减小,光吸收边发生一定程度的蓝移。当Se含量为0.5时,CdSexS1-x的光折射、反射和能量损失最大。除了Se和S的比例为1∶1时CdSexS1-x所属晶系为三斜晶系,其他比例下均为立方晶系。理论计算结果与实验符合。     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si_1-xGe_x合金半导体材料中C_iC_s缺陷的性质进行探讨,同时也对比调查了C_iO_i缺陷在Si和Si_1-xGe_x合金中的性质. 在不同Ge含量的Si_1-xGe_{x关键词： 1-x}Ge_x合金')" href="#">Si_1-xGe_x合金 从头计算法 iC_s缺陷')" href="#">C_iC_s缺陷 iO_i缺陷')" href="#">C_iO_i缺陷     

Investigation of the effect of pressure on thermodynamic properties and thermoelastic phase transformation of CuAlNi alloys: A molecular dynamics study

Thermoelastic phase transformations and thermodynamic properties of CuAlNi alloys at 0, 1, 2 and 3 GPa pressures were investigated by using MD simulation in this study. The interactions between atoms were modelled by Sutton-Chen type of embedded atom method (SCEAM) that is based on many-body interaction. It was observed that thermoelastic phase transformation in the ternary alloy system occurred at the end of thermal process. Radial distribution function (RDF) was used in order to analysis the structures obtained from MD simulation using the simulation techniques’ thermodynamic parameters. The transformation temperatures, enthalpy and entropy of the ternary alloy system have been observed to be changing with the applied pressure. In addition, it was found that the elastic energy has been decreased about 22% by applied pressure whereas Gibbs free energy has been increased about 60% by applied pressure. The values of the thermodynamical parameters obtained in this study were observed to be in close agreement with the experimental study.     

Mg-Al-Ca合金中三元Laves相的稳定性和电子结构

采用基于密度泛函理论的第一性原理方法,应用VASP (Vienna Ab-initio Simulation Package) 计算软件,研究了Mg-Al-Ca合金中三元Laves相,即Ca(Mg1-x,Alx)2和Al2(Ca1-x,Mgx) (x=0, 0.25, 0.50, 0.75, 1)在不同形态结构(C14, C15和C36)下的相稳定性及电子结构。计算所得的晶格常数和实验值吻合很好,形成能和相关能的计算用来研究三元Laves相的合金化能力和稳定性,结果表明：C14-Ca(Mg0.25,Al0.75)2具有很好的合金化能力,而C15- CaAl2具有很好的结构稳定性。态密度和电荷密度的计算用来研究Mg-Al-Ca合金中三元Laves相稳定性的内在微观机制。     

First-Principles GGA+U Study of Intermediate-Band Characters from Zn_(1-x)M_xO(M=3d Transition-Metal) Alloys Suitable for High Efficiency Solar Cell

The electronic structure characters are calculated for the Zn_(1-x)M_xO alloys with some Zn atoms in ZnO substituted by 3d transition-metal atoms(M),in order to find out which of these alloys could provide an intermediate band material used for fabricating high efficiency soiar cell.Especially,among of these alloys,the electronic structure character and optical performance of Zn_(1-x)Cr_xO alloys clearly show an intermediate band Med partially and isolated from the VB and the CB in energy band structure of ZnO host,and the intermediate band characters can be preserved with increasing Cr concentrations no more than 8.33%in Zn_(1-x)Cr_xO alloys,at the same time,the ratio 0.52 of E_g~(FC) to E_g~(VE) in Zn_(1-x)Cr_xO,(x = 4.16%) alloy is closest to the optimal ratio of 0.57.Besides,compared to the ZnO,the optical absorption does indicate a great improved absorption below the calculated band gap of the ZnO and an enhancement of the optical absorption in the whole solar spectral energy range.     

The structural,elastic,and electronic properties of Zr_x Nb_(1-x)C alloys from first principle calculations

The structural,elastic,electronic,and thermodynamic properties of Zr x Nb1-x C alloys are investigated using the first principles method based on the density functional theory.The results show that the structural properties of Zr x Nb1-x C alloys vary continuously with the increase of Zr composition.The alloy possesses both the highest shear modulus(215 GPa)and a higher bulk modulus(294 GPa),with a Zr composition of 0.21.Meanwhile,the Zr0.21Nb0.79C alloy shows metallic conductivity based on the analysis of the density of states.In addition,the thermodynamic stability of the designed alloys is estimated using the calculated enthalpy of mixing.     

Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films

The optical properties of materials are of great significance for their device applications. Different numbers of krypton ions are doped into high-quality Zn-polar Zn O films fabricated by molecular beam epitaxy(MBE) on sapphire substrates through ion implantation. Krypton is chemically inert. The structures, morphologies, and optical properties of films are measured. The x-ray diffraction(XRD) spectra confirm the wurtzite structures of Zn-polar Zn O films. Atomic force microscopy(AFM) results show that the films have pit surface structure and higher roughness after Kr ion implantation. A detailed investigation of the optical properties is performed by using the absorption spectrum, photoluminescence(PL), and spectroscopic ellipsometry(SE). The absorption spectrum is measured by UV-visible spectrophotometer and the bandgap energy is estimated by the Tauc method. The results show that the absorption increases and the bandgap decreases after Kr ion implantation. Moreover, the Kr ion implantation concentration also affects the properties of the film. The ellipsometry results show that the films' refractive index decreases with the Kr ion implantation concentration increasing. These results can conduce to the design and optimization of Kr ion-implanted polar Zn O films for optoelectronic applications.     

Ordered-disordered ternary alloys by atomic layer epitaxy

Ga₀₅In₀₅P ternary alloys, lattice-matched to GaAs substrates, were grown by atomic layer epitaxy. The growth proceeded by the deposition of monolayers of In-P-Ga-P in a self-regulated fashion. The ternary alloys were found to have different crystal and bandgap structures depending on the growth conditions. Films deposited on (1 0 0) oriented GaAs substrates have a random (disordered) structure withE _g 1.9 eV. However, the same ternary alloy deposited on misoriented substrates showed a high degree of ordering withE _g 1.76 eV. The ordered structure is in the form of highly strained monolayer superlattices (InP-GaP) oriented along the (1 1 1) direction. The ordered-disordered transition can also be achieved by Se doping to the 10¹⁷ cm^–3 range. We report on the atomic layer epitaxy growth conditions for both ordered and disordered GaInP films. We also discuss several possible quantum well structures based on this ternary alloy.     

Ga掺杂对纤锌矿TM_(0.125)Zn_(0.875)O(TM=Be,Mg)电子结构和光学能隙的影响

利用密度泛函理论的平面波超软赝势方法,对纤锌矿T M_(0.125)Zn_(0.875)O(TM=Be,Mg)合金和Ga掺杂T M_(0.125)Zn_(0.875)O的结构参数、能带、电子态密度和光学能隙进行计算和分析,结果表明:T M_(0.125)Zn_(0.875)O掺入Ga容易实现并且结构更稳定,T M_(0.125)Zn_(0.875)O合金掺Ga能获得很好的n型材料改性,能隙由导带底Ga 4s态和价带顶O 2p态决定,由于Bllrstein-Moss移动和多体效应,Ga掺杂后的T M_(0.125)Zn_(0.875)O光学能隙变大,这与实验结果相一致,T M_(0.125)Zn_(0.875)O掺Ga材料可作透明导电薄膜应用到紫外和深紫外光电子器件中。     

Elasticity, band structure, and piezoelectricity of BexZn1−xO alloys

Lattice constants, elasticity, band structure and piezoelectricity of hexagonal wide band gap Be_xZn_1−xO ternary alloys are calculated using first-principles methods. The alloys' lattice constants obey Vegard's law well. As Be concentration increases, the bulk modulus and Young's modulus of the alloys increase, whereas the piezoelectricity decreases. We predict that Be_xZn_1−xO/GaN/substrate (x=0.022) multilayer structure can be suitable for high-frequency surface acoustic wave device applications. Our calculated results are in good agreement with experimental data and other theoretical calculations.     

Al_xCrFeNiTi系高熵合金成分和弹性性质关系

为了探索Al_xCrFeNiTi系高熵合金组成成分和弹性性质的关系,结合固溶体特征参数和第一性原理计算,研究Al元素含量对Al_xCrFeNiTi (x=0, 0.5, 1, 2, 3, 4)合金结构和弹性性质的影响,并分析合金固溶体特征参数与弹性性质之间的关系.结果表明:Al_xCrFeNiTi系合金的价电子浓度随着Al含量的增加逐渐减小,合金在体心立方结构下的形成焓均低于面心立方结构,说明研究的Al_xCrFeNiTi系合金会形成单一的体心立方结构固溶体;合金的晶格常数和形成能力强弱随着Al含量的增加而增大,但合金的结构稳定性略有下降;当合金元素按照等原子比进行成分配比时,合金的原子尺寸差异最大; Al_xCrFeNiTi系合金中不同原子之间除了金属键结合外,还表现出一定的共价和离子键结合特征;对于Al_xCrFeNiTi系合金而言,随着热力学熵焓比的增大,合金体弹模量和韧性随之增大;随着合金混合焓的增加,合金在压缩方向的各向异性程度明显降低.热力学熵焓比和混合焓可作为Al_xCrFeNiTi系高熵合金成分设计的重要参数.     

The influence of magnetic sublattice dilution on magnetic order in CeNiGe3 and UNiSi2

Polycrystalline samples of the Y-diluted antiferromagnet CeNiGe(3) (T(N)?=?5.5?K) and Th-diluted ferromagnet UNiSi(2) (T(C)?=?95?K) were studied by means of x-ray powder diffraction, magnetization and specific heat measurements performed in a wide temperature range. The lattice parameters of the Ce(1-x)Y(x)NiGe(3) alloys decrease linearly with increasing Y content, while the unit cell volume of U(1-x)Th(x)NiSi(2) increases linearly with increasing Th content. The ordering temperatures of the systems decrease monotonically with increasing x down to about 1.2?K in Ce(0.4)Y(0.6)NiGe(3) and 26?K in U(0.3)Th(0.7)NiSi(2), forming a dome of long-range magnetic order on their magnetic phase diagrams. The suppression of the magnetic order is associated with distinct broadening of the anomalies at T(N,C) due to crystallographic disorder being a consequence of the alloying. Below the magnetic percolation threshold x(c) of about 0.68 and 0.75 in the Ce- and U-based alloys, respectively, the long-range magnetic order smoothly evolves into a short-range one, forming a tail on the magnetic phase diagrams. The observed behaviour of Ce(1-x)Y(x)NiGe(3) and U(1-x)Th(x)NiSi(2) is characteristic of diluted magnetic alloys.     

Random alloy-like local structure of Fe(Se, S)(1-x)Te(x) superconductors revealed by extended x-ray absorption fine structure

The local structure of Fe(Se, S)(1-x)Te(x) ternary (11-type) chalcogenides has been studied by temperature dependent Fe K-edge extended x-ray absorption fine structure measurements. We find that the Fe-Se and Fe-Te distances in ternary FeSe(1-x)Te(x) are closer to the respective distances in the binary systems, revealing significant divergence of the local structure from the average one. The mean square relative displacements show a systematic change with Te content, consistent with bond relaxation in the inhomogeneous ternary phases. Also, the Fe-Te and Fe-S distances in the FeS(0.2)Te(0.8) ternary system are found to be different in the crystallographically homogeneous structure. The observed features are characteristic of ternary random alloys, suggesting that a proper consideration should be given to the atomic distribution for describing the complex electronic structure of these multi-band Fe-based chalcogenides.     

Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO

The energy band properties, density of states, and band alignment of the BexZn1-xO1-ySy alloy （Be- and S-doped wurtzite ZnO） are investigated by the first-principles method. BexZn1-xO1-ySy alloy is a direct band gap semiconductor, the valence band maximum （VBM） and the conduction band minimum （CBM） of BexZn1-xO1-ySy are dominated by S 3p and Zn 4s states, respectively. The band gap and lattice constant of BexZn1-xO1-ySy alloy can be modulated by changing the doped content values x and y. With the increase in Be content value x in the BexZnl-xOl-ySy alloy, the band gap increases and the lattice constant reduces, but the situation is just the opposite when increasing the S content value y in the BexZn1-xO1-ySy alloy. Because the lattice constant of Be0.375Zn0.625O0.75S0.25 alloy is well matched with that of ZnO and its energy gap is large compared with that of ZnO, so the Be0.375Zn0.625O0.75S0.25 alloy is suitable for serving as the blocking material for a high-quality ZnO-based device.     

Microstructural evolution in Al–Mn–Cu–(Be) alloys

This study investigates the effects of alloying elements on the microstructural evolution of Al-rich Al–Mn–Cu–(Be) alloys during solidification, and subsequent heating and annealing. The samples were characterised using scanning electron microscopy, energy dispersive X-ray spectroscopy, synchrotron X-ray diffraction, time-of-flight secondary-ion mass spectroscopy, and differential scanning calorimetry. In the ternary Al₉₄Mn₃Cu₃ (at%) alloy, the phases formed during slower cooling (≈1?K?s^?1) can be predicted by the known Al–Mn–Cu phase diagram. The addition of Be prevented the formation of Al₆Mn, decreased the fraction of τ₁-Al₂₉Mn₆Cu₄, and increased the fraction of Al₄Mn. During faster cooling (≈1000?K?s^?1), Al₄Mn predominantly formed in the ternary alloy, whereas, in the quaternary alloys, the icosahedral quasicrystalline phase dominated. Further heating and annealing of the alloys caused an increase in the volume fractions of τ₁ in all alloys and Be₄Al (Mn,Cu) in quaternary alloys, while fractions of all other intermetallic phases decreased. Solidification with a moderate cooling rate (≈1000?K?s^?1) caused considerable strengthening, which was reduced by annealing for up to 25% in the quaternary alloys, while hardness remained almost the same in the ternary alloy.     

Fine grains ceramics of PIN-PT, PIN-PMN-PT and PMN-PT systems: drift of the dielectric constant under high electric field

Lead-based ferroelectric ceramics with (1-x)Pb(B1 B2)O3-xPbTiO3 formula have emerged as a group of promising materials for various applications like ultrasonic sonars or medical imaging transducers. (1-x)PMN-xPT, (1-x)PIN-xPT and ternary solutions xPIN-yPMN-zPT ceramics are synthesised using the solid state reaction method. Our objective is to achieve higher structural transition temperatures than those of PMN-PT ceramics with as good dielectric, piezoelectric and electromechanical properties. Ceramics capacitance and loss tangent are measured when the ac field of measurement increases up to E=500 V/mm. Behaviours of these materials under ac field are related to their coercive field and Curie temperature.