激光制备类金刚石膜技术研究

现有技术制备的类金刚石(DLC)膜由于含氢、硬度低、内应力大、附着力差等特点,严重限制了其光学工程应用.激光法是近年发展的一种制备DLC膜的新方法,相比其他制备方法具有诸多优点.综合分析了激光制备DLC膜过程中,激光波长、脉宽、功率密度、衬底温度和偏压等因素对薄膜质量的影响规律.采用氧气氛辅助沉积、元素掺杂和双波长激光...     

脉冲激光制备类金刚石薄膜及原位激光等离子体发射光谱

用ＹＡＧ脉冲激光轰击真空室内的石墨靶,可以形成包含碳素的激光等离子体,并在硅或石英衬氏上淀积形成某种类型的碳膜。用光学多道分析仪原位测量了激光等离子体的发射光谱,给出反应空间可能存在的反应基团有碳原子、碳离子、碳分子等,用拉曼光谱研究了薄膜的结构,证明所形成的薄膜为类金刚石膜,并得出碳原子和碳离子与薄膜的类金刚石结构有关。制备过程中,氢的参与有利于薄膜中金刚石成分的形成。空间分辨的原位激光等离子体发射光谱表明,在反应空间存在薄膜形成的最佳位置。     

脉冲激光沉积法(PLD)生长Co掺杂ZnO薄膜及其磁学性能

采用脉冲激光沉积(PLD)法在单晶Si(100)及石英衬底上生长Co掺杂ZnO薄膜,并且比较了不同生长条件下薄膜的性能。实验观察到了700℃、0.02Pa氧压气氛下生长的Co掺杂ZnO薄膜显示室温磁滞回线。采用XRD、SEM等手段对Co掺杂ZnO薄膜的晶体结构及微观形貌进行了分析,得到的ZnO薄膜具有高度的c轴择优取向,结构比较致密,表面平整度较高,并且没有发现Co的相关分相,初步表明Co有效地掺入了ZnO的晶格当中。霍尔测试表明Co掺杂ZnO薄膜样品保持了半导体的电学性能,电阻率为0.04Ω·cm左右,载流子浓度约为1018/cm3,迁移率都在18.7cm2/V·s以上。实验结果表明材料保持了ZnO半导体的性能,并具有室温铁磁性。     

利用脉冲激光沉积法制备高Mg掺杂的六方相MgZnO薄膜

选用Mg0.2Zn0.8O陶瓷靶,利用脉冲激光沉积(PLD)法,在单晶Si(100)和石英衬底上生长了一系列MgZnO薄膜(MZO)。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)和紫外可见光透射光谱(UV-Vis)等实验手段,研究了在不同工作压强下生长的薄膜样品的晶体结构、微观形貌和光学性能的变化。结果表明:所有的薄膜样品都是单一的ZnO六方相,禁带宽度随生长压强的升高而增加,变化范围在3.83～4.05eV之间,最短吸收边接近300nm。     

利用脉冲激基分子激光制备大尺寸类金刚石薄膜及其均匀性分析

利用脉冲激光沉积结合计算机辅助衬底扫描技术制备了尺寸为70×66mm、均匀性为±5%的类金刚石薄膜,薄膜显微硬度最高为27GPa,薄膜结合强度达到20000转;在制备大尺寸薄膜的过程中,衬底扫描速度越慢,薄膜的均匀性越好;在应用传统清洗等方法的基础上,认为增大镀膜粒子的能量对于提高薄膜和衬底的结合强度是非常重要的.     

XeCl（308nm）脉冲准分子激光淀积类金刚石薄膜

利用ＸｅＣｌ（３０８ｎｍ）脉冲准分子激光淀积技术在功率密度５×１０８Ｗ／ｃｍ２、室温、真空度１０－３Ｐａ的条件下，制备出不含氢成分的类金刚石薄膜，研究了类金刚石薄膜的特性及其随制备工艺条件的变化规律。研究了激光诱导的碳等离子体发射光谱，探讨了类金刚石薄膜的形成机理。     

脉冲激光沉积动力学研究进展

脉冲激光沉积技术是现代常用的先进薄膜材料制备技术之一.文章在简要介绍脉冲激光沉积技术及其进展的基础上,较全面地介绍了脉冲激光 沉积动力学的基本物理图像和动力学构架,深入地探讨了激光烧蚀靶材过程、等离子体膨胀过程和薄膜沉积过程的动力学规律,阐述了我国 学者在脉冲激光沉积动力学研究方面的贡献,例如包括脉冲激光沉积三个工艺过程自洽的统一模型,等离子体膨胀的冲击波模型,基于局域 能量动量守恒定律的新等离子体演化动力学模型,包括热源项、蒸发项、等离子体屏蔽效应和动态物性参数的烧蚀热传导模型,考虑电子碰 撞效应和能带结构变化的修正双温模型,能统一描写从纳秒级到飞秒级脉冲激光烧蚀规律的统一双温模型等.     

Tribological properties of diamond-like carbon films deposited by pulsed laser arc deposition

A novel method, pulsed laser arc deposition combining the advantages of pulsed laser deposition and cathode vacuum arc techniques, was used to deposit the diamond-like carbon (DLC) nanofilms with different thicknesses. Spectroscopic ellipsometer, Auger electron spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and multi-functional friction and wear tester were employed to investigate the physical and tribological properties of the deposited films. The results show that the deposited films are amorphous and the sp$^{2}$, sp$^{3}$ and C--O bonds at the top surface of the films are identified. The Raman peak intensity and surface roughness increase with increasing film thickness. Friction coefficients are about 0.1, 0.15, 0.18, when the film thicknesses are in the range of 17--21~nm, 30--57~nm, 67--123~nm, respectively. This is attributed to the united effects of substrate and surface roughness. The wear mechanism of DLC films is mainly abrasive wear when film thickness is in the range of 17--41~nm, while it transforms to abrasive and adhesive wear, when the film thickness lies between 72 and 123~nm.     

飞秒激光制备硅窗口增透保护类金刚石膜

采用飞秒激光（800 nm, 120 fs, 3 W, 1 000 Hz）制备类金刚石膜,研究了不同偏压、生长温度和氧气氛等辅助手段对激光沉积类金刚石膜的影响,实验发现在室温（25 ℃）、无偏压和低气压氧气氛（2 Pa）条件下沉积的类金刚石膜性能最优。在单面预镀普通增透膜的硅红外窗口材料上镀制出了无氢类金刚石膜,3~5 μm 波段平均透过率达到90%以上,纳米硬度高达40 GPa,用压力为9.8 N的橡皮磨头,摩擦10５次,膜层未见磨损,并且通过了军标规定的高温、低温、湿热、盐雾等环境试验,所制类金刚石膜可对红外窗口起到较好的增透保护作用。     

Determination of the optical bandgap for diamond-like carbon films obtained by laser plasma deposition

We have obtained and analyzed the optical transmission spectra of diamond-like carbon films deposited on quartz substrates by pulsed laser deposition (λ = 1064 nm, τ = 20 nsec, q = 4.9·10⁸ W/cm²) under vacuum (p = 2.6·10⁻³ Pa). Based on the spectra obtained, we have estimated the size of the bandgap by the Tauc method, and also have studied the growth dynamics of the coatings formed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 637–641, September–October, 2007.     

脉冲激光气相沉积法制备的非晶CH薄膜特性分析

采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度（100~300 nm）、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。     

Surface properties of diamond-like carbon films prepared by CVD and PVD methods

Diamond-like carbon (DLC) films have been deposited using three different techniques: (a) electron cyclotron resonance---plasma source ion implantation, (b) low-pressure dielectric barrier discharge, (c) filtered---pulsed cathodic arc discharge. The surface and mechanical properties of these films are compared using atomic force microscope-based tests. The experimental results show that hydrogenated DLC films are covered with soft surface layers enriched with hydrogen and sp$^{3}$ hybridized carbon while the soft surface layers of tetrahedral amorphous carbon (ta-C) films have graphite-like structure. The formation of soft surface layers can be associated with the surface diffusion and growth induced by the low-energy deposition process. For typical CVD methods, the atomic hydrogen in the plasmas can contribute to the formation of hydrogen and sp$^{3}$ hybridized carbon enriched surface layers. The high-energy ion implantation causes the rearrangement of atoms beneath the surface layer and leads to an increase in film density. The ta-C films can be deposited using the medium energy carbon ions in the highly-ionized plasma.     

脉冲激光沉积法制备的ZnO薄膜的低阈值电抽运紫外随机激射

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜, 用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、 表面形貌和光致发光等进行了表征. 进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射. 结果表明, 与以溅射法制备的ZnO薄膜作为发光层的器件相比, 以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率. 这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少, 从而显著地减少了紫外光在光散射过程中的光损耗. 关键词： 随机激射 ZnO薄膜 脉冲激光沉积 溅射     

脉冲激光气相沉积法制备的非晶CH薄膜特性分析

采用脉冲激光气相沉积(PLD)法,研究了氢气压强对非晶CH薄膜性能的影响。原子力显微镜图和白光干涉图显示,薄膜表面平整致密,随着氢气压强增大,粗糙度变大。拉曼光谱分析表明,氢气压强增加,G峰和D峰位置都在向高波数方向移动。傅里叶变换红外光谱分析显示,薄膜中存在sp3—CH2和sp2—CH等基团。最后,采用PLD漂浮法在最优参数氢气压强为0.3 Pa下,成功制备了不同厚度(100~300 nm)、满足一定力学强度、无明显宏观缺陷的自支撑CH薄膜。     

沉积温度对钛硅共掺杂类金刚石薄膜生长、结构和力学性能的影响

采用中频磁控溅射Ti80Si20复合靶在单晶硅表面制备了共掺杂的类金刚石薄膜.研究了沉积温度对薄膜生长速率、化学成分、结构、表面性质和力学性能的影响.结果表明:随沉积温度升高,薄膜生长速率降低,薄膜Ti和Si原子浓度增加,C原子浓度降低;在高温下沉积的薄膜具有低sp3C含量、低表面接触角、低内应力和高的硬度与弹性模量.基于亚表层注入生长模型分析了沉积温度对薄膜生长和键合结构的影响,从薄膜生长机制和微观结构解释了表面性质和力学性能的变化.     

Preparation and tribological properties of DLC/Ti filmby pulsed laser arc deposition

This paper reports that DLC (diamond like carbon)/Ti and DLC films were prepared by using pulsed laser arc deposition. R-ray diffraction, Auger electron spectroscopy, Raman spectroscopy, atomic force microscopy, nanoindenter, spectroscopic ellipsometer, surface profiler and micro-tribometer were employed to study the structure and tribological properties of DLC/Ti and DLC films. The results show that DLC/Ti film, with $I(D)/I(G)$ 0.28 and corresponding to 76{\%} sp$^{3}$ content calculated by Raman spectroscopy, uniform chemical composition along depth direction, 98 at{\%} content of carbon, hardness 8.2 GPa and Young's modulus 110.5 GPa, compressive stress 6.579 GPa, thickness 46~nm, coefficient of friction 0.08, and critical load 95mN, exhibits excellent mechanical and tribological properties.     

电化学方法制备ZnO纳米颗粒掺杂类金刚石薄膜及其场发射性能研究

采用液相电化学沉积技术制备了ZnO纳米颗粒掺杂的类金刚石(DLC)薄膜, 研究了ZnO纳米颗粒掺杂对DLC薄膜场发射性能的影响. 利用X射线光电子能谱、透射电子显微镜、Raman光谱以及原子力显微镜分别对薄膜的化学组成、 微观结构和表面形貌进行了表征. 结果表明: 薄膜中的ZnO纳米颗粒具有纤锌矿结构, 其含量随着电解液中Zn源的增加而增加. ZnO纳米颗粒掺杂增强了DLC薄膜的石墨化和表面粗糙度. 场发射测试表明, ZnO纳米颗粒掺杂能提高DLC薄膜的场发射性能, 其中Zn与Zn+C的原子比为10.3%的样品在外加电场强度为20.7 V/μm时电流密度达到了1 mA/cm². 薄膜场发射性能的提高归因于ZnO掺杂引起的表面粗糙度和DLC薄膜石墨化程度的增加.