Interaction of low-energy ions and atoms of light elements with a fluorinated carbon molecular lattice

The mechanism of interaction of low-energy atoms and ions of light elements (H, H+, He, Li, the kinetic energy of the particles 2-40 eV) with C6H6, C6F12, C60, and C60F48 molecules was studied by ab initio MD simulations and quantum-chemical calculations. It was shown that starting from 6 A from the carbon skeleton for the "C6H6 + proton" and "C60 + proton" systems, the electronic charge transfer from the aromatic molecule to H+ occurs with a probability close to 1. The process transforms the H+ to a hydrogen atom and the neutral C6H6 and C60 molecules to cation radicals. The mechanism of interaction of low-energy protons with C6F12 and C60F48 molecules has a substantially different character and can be considered qualitatively as the interaction between a neutral molecule and a point charge. The Coulomb perturbation of the system arising from the interaction of the uncompensated proton charge with the Mulliken charges of fluorine atoms results in an inversion of the energies of the electronic states localized on the proton and on the C6F12 and C60F48 molecules and makes the electronic charge transfer energetically unfavorable. On the different levels of theory, the barriers of the proton penetration for the C6F12 and C60F48 molecules are from two to four times lower than those for the corresponding parent systems (C6H6 and C60). The penetration barriers of the He atom and Li+ ion depend mainly on the effective radii of the bombarding particles. The theoretical penetration and escaped barriers for the "Li+ + C60" process qualitatively explain the experimental conditions of synthesis of the Li@C60 complex.     

Surface transfer p-type doping of epitaxial graphene

Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications.     

Fermi level engineering of single-walled carbon nanotubes by AuCl3 doping

We investigated the modulation of optical properties of single-walled carbon nanotubes (SWCNTs) by AuCl 3 doping. The van Hove singularity transitions (E 11 (S), E 22 (S), E 11 (M)) in absorption spectroscopy disappeared gradually with an increasing doping concentration and a new peak appeared at a high doping concentration. The work function was downshifted up to 0.42 eV by a strong charge transfer from the SWCNTs to AuCl 3 by a high level of p-doping. We propose that this large work function shift forces the Fermi level of the SWCNTs to be located deep in the valence band, i.e., highly degenerate, creating empty van Hove singularity states, and hence the work function shift invokes a new asymmetric transition in the absorption spectroscopy from a deeper level to newly generated empty states.     

Charge transfer excitations in cofacial fullerene-porphyrin complexes

Porphyrin and fullerene donor-acceptor complexes have been extensively studied for their photo-induced charge transfer characteristics. We present the electronic structure of ground states and a few charge transfer excited states of four cofacial porphyrin-fullerene molecular constructs studied using density functional theory at the all-electron level using large polarized basis sets. The donors are base and Zn-tetraphenyl porphyrins and the acceptor molecules are C(60) and C(70). The complexes reported here are non-bonded with a face-to-face distance between the porphyrin and the fullerene of 2.7 to 3.0 A?. The energies of the low lying excited states including charge transfer states calculated using our recent excited state method are in good agreement with available experimental values. We find that replacing C(60) by C(70) in a given dyad may increase the lowest charge transfer excitation energy by about 0.27 eV. Variation of donor in these complexes has marginal effect on the lowest charge transfer excitation energy. The interfacial dipole moments and lowest charge transfer states are studied as a function of face-to-face distance.     

Surface charge transfer doping of graphene using a strong molecular dopant CN6-CP

Surface charge transfer doping of graphene plays an important role in graphene-based electronics due to its simplicity, high doping efficiency, and easy-controllability. Here, we demonstrate the effective surface charge transfer hole doping of graphene by using a strong p-type molecular dopant hexacyano-trimethylene-cyclopropane (CN6-CP). The CN6-CP exhibits a very high intrinsic work function of 6.37 eV, which facilitates remarkable electron transfer from graphene to CN6-CP as revealed by in situ photoelectron spectroscopy investigations. Consequently, hole accumulation appears in the graphene layer at the direct contact with CN6-CP. As evidenced by Hall effect measurements, the areal hole density of graphene significantly increased from 8.3 × 10¹² cm^?2 to 2.21 × 10¹³ cm^?2 upon 6 nm CN6-CP evaporation. The CN6-CP acceptor with strong p-doping effect has great implications for both graphene-based and organic electronics.     

Ion chemistry of NOO+

The kinetics for the reactions of NOO+ ions with neutral molecules having ionization potentials (IPs) from 9.27 to 15.58 eV was measured in a selected ion flow tube at 298 K. The NOO+ ions are produced from the reaction of N3+ + O2 and have been reacted with the following: NO, C6F6, CS2, CF3I, C3F6, OCS, C2H6, Xe, SO2, O3, N2O, CO2, Kr, CO, D2, and N2. Numerous types of reactions were observed with the various neutral reagents, including production of NO+ (which may involve loss of an O from the ion or addition of O to the neutral reactant, although the two channels could not be distinguished here), charge transfer, isomerization of NOO+ to ONO+, and hydride abstraction. High level theoretical calculations of the structures and energetics of the various isomers, electronic states, and transition states of NOO and NOO+ were performed to better understand the observed reactivity. All neutral species with an IP< or =11.18 eV were observed to react with NOO+ in part by charge transfer. Detailed calculations showed that the recommended adiabatic and vertical IPs of NOO are 10.4 and 11.7 eV, respectively, at the MRCISDQ/AVQZ level of theory. The observed experimental limit for charge transfer of 11.18 eV agreed well with the energetics of the final products obtained from theory if dissociation of the neutral metastable product occurred, i.e., the products were X+ +[O(3P) + NO(2Pi)], where [O(3P)+NO(2Pi)] formed via dissociation of metastable NOO. Charge exchange with neutral reagent X would, therefore, be exothermic if IP(X)<[IPad(NOO)-DeltaE(O+NO)-NOO]= approximately 11.1 eV, where IPad(NOO) is the adiabatic IP. The potential energy surface for the reaction of NOO+ with C2H6 was also calculated, indicating that two pathways for formation of HNO2 + C2H5 (+) exist.     

Electronic properties of a pure and sodium-doped C(70) single layer adsorbed on Al polycrystalline surface

Core level and valence band photoemission measurements combined with near edge x-ray absorption fine structure measurements were performed on a single C(70) layer adsorbed on polycrystalline Al (1 ML-C(70)/Al) (ML-monolayer), pure and doped with sodium atoms. The data obtained from the pure ML chemisorbed on Al surface show a semiconducting behavior of the system, which is characterized by a covalent bond between the adsorbate and the substrate. The same data show also that the C(70) molecules tend to orient themselves with the C(5v) axis perpendicular to the surface in analogy to what observed for 1 ML-C(70)/Cu(111). By doping the sample with sodium atoms a charge transfer from the alkali atoms to the lowest unoccupied molecular orbital (LUMO) of the C(70) molecules takes place, as underlined by the gradual increasing intensity of the C(70) LUMO peak as a function of doping. Nevertheless, no metallic phases are observed for any doping step.     

Oxygen effects on the interfacial electronic structure of titanyl phthalocyanine film: p-Type doping,band bending and Fermi level alignment

The effect of oxygen doping on titanyl phthalocyanine (TiOPc) film was investigated by ultraviolet photoelectron spectroscopy (UPS). The electronic structure of the interface formed between TiOPc films deposited on highly oriented pyrolytic graphite (HOPG) was clearly different between the films prepared in ultrahigh vacuum (UHV) and under O₂ atmosphere (1.3 × 10⁻² Pa). The film deposited in UHV showed downward band bending characteristic of n-type semiconductor, possibly due to residual impurities working as unintentional n-type dopants. On the other hand, the film deposited under O₂ atmosphere showed upward band bending characteristic of p-type semiconductor. Such trends, including the conversion from n- to p-type, are in excellent correspondence with reported field effect transistor characteristics of TiOPc, and clearly demonstrates that bulk TiOPc film was p-doped with oxygen. In order to examine the Fermi level alignment between TiOPc film and the substrate, the energy of the highest occupied molecular orbital (HOMO) of TiOPc relative to the Fermi level of the conductive substrate was determined for various substrates. The alignment between the Fermi level of conductive substrate and Fermi level of TiOPc film at fixed energy in the bandgap was not observed for the TiOPc film prepared in UHV, possibly because of insufficient charge density in the TiOPc film. This situation was drastically changed when the TiOPc film exposed to O₂, and clear alignment of the Fermi level fixed at 0.6 eV above the HOMO with the Fermi level of the conducting substrate was observed, probably by p-type doping effect of oxygen. These are the first direct and quantitative information about bulk oxygen doping from the viewpoint of the electronic structure. These results suggest that similar band bending with Fermi level alignment may be also achieved for other organic semiconductors under practical device conditions, and also call for caution at the comparison of experimental results obtained under UHV and ambient atmosphere.     

Si-C(N) sigma linkages and N --> Si dative bonding at pyridine/Si(111)-7 x 7

We experimentally demonstrated that pyridine/Si(111)-7 x 7 can act as an electron donor/acceptor pair as a result of the charge transfer from the electron-rich N atom of pyridine to the electron-deficient adatom of the Si surface, evidenced by the upshift of 1.8 eV (state A) for the N(1s) core level upon the formation of a datively bonded complex compared to physisorbed molecules. Another state (B) whose N(1s) binding energy downshifts by 1.2 eV was assigned to an adduct through Si-C and Si-N covalent linkages, formed via a [4 + 2]-like addition mechanism on Si(111)-7 x 7. Binding molecules through the formation of the dative bond resulted from significant electron transfer opens a new approach for the creation of Si-based molecular architectures and modification of semiconductor interfacial properties with unsaturated organic molecules.     

萘酞菁锌复合体系的光致电荷转移

合成了萘酞菁锌, 利用傅立叶红外光谱、元素分析和MALDI-TOF质谱等手段表征了分子结构; 循环伏安测试和吸收光谱确认了共轭体系的扩大使分子带隙下降. 根据材料加工性能的不同, 分别采用溶液法、层-层蒸镀(Layer-by-layer evaporation)法和单层分散旋涂法, 将给体分子萘酞菁锌与三种受体分子1-(3-甲氧基羧基)丙基-1-苯 基-[6,6]C61, C60和N,N’-二嘧啶基苝四羧基二酰亚胺进行了复合, 通过研究复合前后荧光变化, 确认了给体-受体两相界面处发生了由分子能级差引发的光致电荷转移, 为制备更宽光伏响应范围的太阳能电池器件提供了潜在的新途径.     

Electrical and optical properties of a novel nonconjugated conductive polymer,poly(β‐pinene)

Electrical conductivity in a novel nonconjugated conductive polymer, poly(β‐pinene), has been measured as a function of molar concentration of iodine. The conductivity increases about 10 orders of magnitude to a maximum value ?8 × 10^?3 S/cm. The molar concentration of iodine, corresponding to saturation, is ?0.85. The optical absorption measurements after light doping have shown two peaks: one at 4.0 eV and the other at 3.1 eV. The first peak is due to the radical cation, and the second due to the charge‐transfer between the double bond and the dopant. As observed in other nonconjugated conductive polymers, the second peak becomes broader and undergoes a red shift, upon higher doping. The FTIR spectroscopic studies have shown that the C?C stretching vibration at 1610 cm^?1 and the ?C? H bending vibration band at 728 cm^?1 decrease upon doping, because of decrease of double bonds. Photoluminescence studies of poly(β‐pinene) show a maximum value at 360 nm for excitation at 280 nm. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 3695–3698, 2005     

Significant influence of doping effect on photovoltaic performance of efficient fullerene-free polymer solar cells

The modification mechanism of the water/alcohol cathode interlayer is one of the most complicated problems in the field of organic photovoltaics,which has not been clearly elucidated yet;this greatly restricts the further enhancement of the PCE for polymer solar cells.Herein,we clarified the different effects of PFN and its derivatives,namely,poly[(9,9-bis(3'-((N,N-dimethyl)-N-ethylammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)](PFN-Br) in modifying fullerene-free PSCs.It is found for the first time that doping on IT-4F by the amino group of PFN leads to the unfavorable charge accumulation,and hence,forms a dense layer of electronegative molecule due to the poor electron transport capacity of the non-fullerene acceptor IT-4F.The electronegative molecular layer can block the electron transfer from the active layer to the interlayer and cause serious charge recombination at the active layer/cathode interface.This mechanism could be verified by the ESR measurement and electron-only devices.By replacing PFN with PFN-Br,the excessive doping effect between the cathode interlayer and IT-4F is eliminated,by which the charge transport and collection can be greatly improved.As a result,a high PCE of 13.5%was achieved in the fullerene-free PSCs.     

Vibrational spectroscopy of individual doping centers in a monolayer organic crystal

A scanning tunneling microscope (STM) is used to study individual Ag doping centers in a monolayer of C60 molecules supported on a thin Al2O3 film grown on the NiAl(110) surface. Vibronic states of the doping centers are observed with differential conductance (dIdV) spectroscopy. The double-barrier nature of the junction results in bipolar transport: same states participate in charge transport at both bias voltage polarities. Identification of the dIdV features corresponding to bipolar conduction enables a new mode of vibrational spectroscopy with STM.     

Energy level tuning of polythiophene derivative by click chemistry‐type postfunctionalization of side‐chain alkynes

A polythiophene derivative substituted with electron‐rich alkynes as a side chain was synthesized using the Suzuki polycondensation reaction. The electron‐rich alkynes underwent the “click chemistry”‐type quantitative addition reaction with strong acceptor molecules, such as tetracyanoethylene (TCNE) and 7,7,8,8‐tetracyanoquinodimethane (TCNQ), resulting in the formation of donor–acceptor chromophores. All polymers showed excellent solubilities in the common organic solvents as well as good thermal stabilities with their 5% decomposition temperatures exceeding 230 °C. The TCNE‐/TCNQ‐adducted polymers displayed well‐defined charge‐transfer (CT) bands in the low energy region. The CT energy of the TCNE‐adducted polymer was 2.56 eV (484 nm), which was much greater than that of the TCNQ‐adducted polymer [1.65 eV (750 nm)]. This result was supported by the electrochemical measurements. The electrochemical band gaps of the TCNE‐adducted polymers were much greater than those of the corresponding TCNQ‐adducted polymers. Furthermore, the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels, determined from the first oxidation and first reduction peak potentials, respectively, decreased with the increasing acceptor addition amount. All these results suggested that the energy levels of the polythiophene derivative can be tuned by varying the species and amount of the acceptor molecules using this postfunctionalization method. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

Surface transfer doping of semiconductors

Surface transfer doping relies on charge separation at interfaces, and represents a valuable tool for the controlled and nondestructive doping of nanostructured materials or organic semiconductors at the nanometer-scale. It cannot be easily achieved by the conventional implantation process with energetic ions. Surface transfer doping can effectively dope semiconductors and nanostructures at relatively low cost, thereby facilitating the development of organic and nanoelectronics. The aim of this review is to highlight recent advances of surface transfer doping of semiconductors. Special focus is given to the effective doping of diamond, epitaxial graphene thermally grown on SiC, and organic semiconductors. The doping mechanism of various semiconductors and their possible applications in nanoelectronic devices will be discussed, including the interfacial charge transfer and the energy level alignment mechanisms.     

两聚物(C6H5F)+2的光解离光谱

使用质量选择的团簇离子光解离光谱技术,ＫａｚｎｈｉｋｏＯｈａｓｈｉ等人研究了两聚物离子苯的电子态谱[1],在可见到近红外波段,光谱分为两种类型:一种是局域激发带,它是出自于两聚体(Ｘ) 2中单体离子Ｘ 的局域电子激发跃迁;另一种则是电荷共振带.在两聚体(Ｘ) 2中,电荷...     

Electroreflectance spectra of polycrystalline gallium in alkali solutions

The electroreflectance spectra (ES) of polycrystalline gallium in alkali solutions have two bands of charge transfer (BCT) from adsorbed water molecules to metal. The energy of one band equals about 4.6 eV and is potential-independent, which points to the presence of water molecules with a zero charge transfer at the metal surface. The energy of the other is lower and drops with increasing potential, which points to the absence of decomposition of adsorbed water to OH_ groups. The plasma ES on gallium is determined largely by mechanism governing electromodulation of the concentration of the surface anion centers where the metal’s free electrons are scattered. The mechanism provides the ES intensity commensurate with that of the water BCT     

Theoretical study of novel porphyrins bearing electron donor–acceptor groups

This research project is focused on molecules that comprise a series of asymmetrically A₃B‐type meso‐substituted free‐base porphyrins and their related Zn‐metalloporphyrins. A and B were taken as electron‐donor and electron–acceptor groups. Full geometry optimizations without symmetry constrains were performed with B3LYP/6‐31G(d,P) methodology. Time‐dependent density functional theory calculations of the optimized structures indicate that there is a good agreement with the available experimental results. The highest occupied molecular orbital–lowest occupied molecular orbital (LUMO) gaps (ranging between 2.62 and 2.80 eV) are similar to those reported before for other porphyrins (2.29 eV). Also, the LUMO is situated close to the conduction band of titanium oxide, increasing the possibility of a charge transfer process. As porphyrins may act as electron transfer systems, the electron donor–acceptor capacity of these systems is characterized using two parameters; electrodonating (χ?) and electroaccepting (χ+) electronegativity. The main goal of this investigation is to analyze the electronic structure and the donor–acceptor properties of these porphyrins to see if these compounds could be useful for further applications related to the design of solar cells. © 2012 Wiley Periodicals, Inc.     

MTDTPY.TCNQ及MTDTPY.CHL电荷转移复合物晶体的电子能带结构 及其与导电性能 关系的研究

用紧束缚近似的EHMO方法对αMTDTPY.TCNQ(1)、β-MTDTPY.TCNQ(2)及MTDTPY.CHL(3)三种电荷转移复合物晶体的电子能带进行了计算。在1中,电子施体(D)分子MTDTPY及受体(A)分子TCNQ形成交替重叠的一维分子柱(M),柱间无净电荷转移。能隙E~G=0.15eV,载流子的产生主要来自热激发。在2及3中,电子施体(D)MTDTPY及受体(A)TCNQ及CHL分子分别相对独立的D及A一维分子柱,载流子的产生主要来自柱间的电荷转移。由电子能带结构及关于载流子迁移的Frohlich-Sewell公式,得出上述三种晶体的室温电导率之比为σ1:σ2:σ3=3.75×10^-^1^0:1:1.15,与实验事实基本一致。关于各分子柱对σ的贡献,2中D柱:A柱～10^3:1;3中D柱:A柱～2:1。根据计算结果,本文还对载流子的迁移机理进行了讨论。     

N doping of TiO2(110): photoemission and density-functional studies

The electronic properties of N-doped rutile TiO2(110) have been investigated using synchrotron-based photoemission and density-functional calculations. The doping via N2+ ion bombardment leads to the implantation of N atoms (approximately 5% saturation concentration) that coexist with O vacancies. Ti 2p core level spectra show the formation of Ti3+ and a second partially reduced Ti species with oxidation states between +4 and +3. The valence region of the TiO(2-x)N(y)(110) systems exhibits a broad peak for Ti3+ near the Fermi level and N-induced features above the O 2p valence band that shift the edge up by approximately 0.5 eV. The magnitude of this shift is consistent with the "redshift" observed in the ultraviolet spectrum of N-doped TiO2. The experimental and theoretical results show the existence of attractive interactions between the dopant and O vacancies. First, the presence of N embedded in the surface layer reduces the formation energy of O vacancies. Second, the existence of O vacancies stabilizes the N impurities with respect to N2(g) formation. When oxygen vacancies and N impurities are together there is an electron transfer from the higher energy 3d band of Ti3+ to the lower energy 2p band of the N(2-) impurities.