Well-defined Co clusters embedded in an Ag matrix: A model system for the giant magnetoresistance in granular films

Well-defined granular Co/Ag films have been prepared by the co-deposition of in-beam prepared Co clusters and Ag atoms. In this way we were able to study the giant magnetoresistance (GMR) as a function of mean Co cluster size for a fixed Co cluster volume fraction v_cl as well as a function of v_cl for a fixed . Mean Co cluster size has been varied between and 6.9 nm, Co cluster volume fraction between 5 and 43%. The GMR was measured in-situ at T=4.2 K in magnetic fields 1.2 T. The analysis of the GMR data obtained from these studies clearly shows that spin-dependent scattering at the Co-cluster/Ag-matrix interface is the only relevant scattering mechanism causing the GMR in our well-defined samples. Received: 21 April 1998 / Received in final form: 17 May 1998 / Accepted: 18 May 1998     

Tunnel magnetoresistance of bilayer ferromagnetic nanoparticles with magnetostatic interlayer interaction

A new method for forming submicron magnetic tunnel junctions consisting of two CoFe ferromagnetic layers separated by a dielectric TaO _x spacer is proposed. It is shown that the tunnel magnetoresistance effect can be used for studying the features of magnetization reversal of bilayer ferromagnetic nanoparticles.     

Positive magnetoresistance effect in rare earth cobaltites

The structure, magnetic, and magnetotransport properties of the Pr_0.5Sr_0.5Co_{1 ? x} Fe _x O₃ system have been studied. The ferromagnet-spin glass (x = 0.5)-G-type antiferromagnet (x = 0.7) transitions and the metal—insulator transitions (x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.     

High sensitivity GMR with small hysteresis in Ni–Fe/Cu multilayers

Giant magnetoresistance (GMR) effect and magnetisation reversal processes have been investigated in Py/Cu(Py=Ni₈₃Fe₁₇,permalloy) multilayers (Mls) obtained by face-to-face sputtering method. The investigated films had constant sublayer thicknesses both for Py and Cu (d_Cu=2nm,d_Py=2nm) and various numbers of ferromagnetic sublayers. It has been shown that for such Mls a high field sensitivity of GMR effect (S≈0.4%/Oe) and negligible hysteresis can be obtained for a low number of Py layers.     

Correlation between structural and giant magnetoresistance properties of Fe–Ag nanogranular films

Fe _x Ag_1?x granular thin-films, with the atomic Fe concentration, x, ranging from 0 up to 0.5, were deposited by dc magnetron co-sputtering. The giant magnetoresistance (GMR) intensity is maximum at x _I  = 0.32, while the maximum of GMR efficiency, γ, i.e., the change of GMR intensity for a unit change of reduced squared magnetization, is observed at x _γ = 0.26. Owing to the spin-dependent scattering features, the GMR intensity and γ depend on both the concentration and the arrangement of the magnetic material. Therefore, to explain the difference between x _I and x _γ and to understand how the structural properties affect the magnetoresistive behaviour, we performed magnetization, Mössbauer and X-ray diffraction measurements as a function of x. X-ray data indicate that the granular films exhibit three different regimes: for x < 0.2, they can be described as a Fe–Ag solid solution; for 0.2 < x < 0.32 the Fe–Ag solid solution is still observed and very small Fe precipitates are found; finally, for x > 0.32, a Fe–Ag saturated solid solution is detected, containing bcc Fe clusters whose size is about 10 nm. Differently, for all the concentrations, magnetization data show the presence of Fe precipitates, whose size increases with x, and the Mössbauer investigation confirms this picture. We find that the samples grown at x = x _γ display the finest Fe dispersion within the Ag matrix, as the Fe–Ag solid solution is nearly at saturation and the Fe cluster size is of the order of a few nanometers; this arrangement possibly maximizes the magnetic/non-magnetic interface extension thus enhancing the GMR efficiency. If x is slightly increased, the increase in total Fe content compensates the GMR efficiency reduction, so the GMR intensity maximum is observed.     

Intergranular giant magnetoresistance in a spontaneously phase separated perovskite oxide

We present small-angle neutron scattering data proving that, on the insulating side of the metal-insulator transition, the doped perovskite cobaltite La(1-x)Sr(x)CoO(3) phase separates into ferromagnetic metallic clusters embedded in a nonferromagnetic matrix. This induces a hysteretic magnetoresistance, with temperature and field dependence characteristic of intergranular giant magnetoresistance (GMR). We argue that this system is a natural analog to the artificial structures fabricated by depositing nanoscale ferromagnetic particles in a metallic or insulating matrix; i.e., this material displays a GMR effect without the deliberate introduction of chemical interfaces.     

3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed.     

Giant magnetoresistance of MexMn1−x S (Me=Fe, Cr) sulfides

The structural, electrical, and magnetic properties, as well as the magnetoresistance of polycrystalline Me_xMn_1?x S (Me=Fe and Cr) sulfides were investigated in longitudinal magnetic fields of up to 50 kOe over the temperature range 4.2–300 K. The ferromagnetic compound Fe_xMn_1?x S (x=0.29) exhibits the giant magnetoresistance (GMR) effect with magnitude δ_H=?450% in a field of 30 kOe at 50 K. Antiferromagnetic Cr_xMn_1?x S (x=0.5) sulfide undergoes a transition to the GMR state δ_H～?25% in a field of 30 kOe at 4.2 K) in the region of antiferromagnet-ferromagnet transition (T _c ～66 K). A mechanism of the GMR in these compounds is discussed.     

Application of magnetically modulated microwave absorption to study of giant magnetoresistance effect in the Ni−Fe/Cu multilayer system

Magnetically modulated microwave absorption (MMMA), magnetic hysteresisM(H), giant magnetoresistance (GMR) and ferromagnetic resonance (FMR) have been examined in the antiferro-magnetically coupled Py/Cu (Py=Ni₈₃Fe₁₇, permalloy) multilayer system. The correlation between results obtained by the MMMA technique, the standard GMR measurements, and magnetization reversal studies is shown. Microwave studies of GMR, magnetization reversal, and FMR for different orientations of the magnetic field with respect to the sample surface are presented.     

Giant magnetoresistance in Ce-doped manganite systems

The fascinating properties like giant magnetoresistance (GMR) effect, metal-insulator transition, charge ordering phenomenon etc. have made the divalent ion doped RMnO₃ (R = rare-earth elements) an attractive system for investigation. Resistivity of these compounds shows a peak near the ferromagnetic transition temperature (T _c ). The application of magnetic field inhibits the spin-disorder scattering and the resistivity decreases drastically. Keeping electrondoped superconductor Nd_2?x Ce _x CuO₄ in mind we have doped RMnO₃ (R = La, Pr, Nd) with tetravalent Ce ion. These compounds are very susceptible to the annealing treatment and belong to the orthorhombic perovskite phase. They show a very high value of resistivity at the peak and under the magnetic field the GMR effect is observed. For La_0.7Ce_0.3MnO₃ and Pr_0.7Ce_0.3MnO₃ the magnetoresistance ratio reaches about 54% and 82.5% respectively at 7.7 T. With the increase of the temperature the magnetic state changes from ferromagnetic to paramagnetic regime. This magnetic transition is not very sharp and the resistivity peak appears at a temperature higher than T _c .     

Concentration dependence of giant magnetoresistance in magnetic granular composites

We combine effective medium theory (EMT) with the two-channel conducting model to study the magnetic granular concentration dependence of a giant magnetoresistance (GMR) in magnetic granular composites. The composite is composed of small magnetic granules (such as Co) embedded in an immiscible nonmagnetic metallic matrix (such as Ag). We present a model for the composite in which the magnetic metallic granules are spherical in shape and have a distribution in sizes, and in which there are different contributions of superparamagnetic and ferromagnetic granules to conductance. The calculated result about the concentration dependence of GMR is in agreement with the experimental data.     

Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlO_x/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe₃O₄ layer at the CoFe/AlO_x interfaces. The Fe L_2,3 edge core level shifts are also consistent with those of Fe₃O₄. We find no Fe₃O₄ layer in junctions with normal TMR. We believe this Fe₃O₄ layer is responsible for the inverse TMR.     

Correlation between magnetotransport properties and the microstructure of the Co20Cu80 granular alloy

We report on the structural, transport and magnetic properties of Co₂₀Cu₈₀ metallic granular films. The granular films are prepared by ion-beam sputtering at room temperature on glass substrates. The structural properties have been investigated using X-ray diffraction and transmission electron microscopy. Structural characterisation confirmed that the samples consist of fine magnetic particles embedded in the non-magnetic Cu matrix. Giant magnetoresistance (GMR) of 3% is observed at room temperature after annealing at 250°C for 30 min. Detailed structural analysis is performed to understand the origin of the small GMR signal. It is confirmed that this result is directly correlated to the small size, density, and non-uniform distribution of Co particles.     

Effects of oxidation and cluster distribution on thermal and magnetotransport properties of mechanically alloyed Co–Cu powders

Thermal and magnetotransport properties of mechanically alloyed Co₃₀Cu₇₀ powders of three different milling times are studied. Both milling and annealing bring about oxidation of the samples. The powders show exothermic behaviors corresponding to the lattice-recovery process. Different milling times and annealing temperatures give rise to different exothermic peaks because of oxidation and the cluster distribution. At room temperature, the compressed powders show, on average, up to 11% giant magnetoresistance (GMR) under 10 kOe with sharp switching. The results may be understood in terms of spin-dependent scattering across Co/oxide/Cu interfaces. Annealing reduces the resistance but does not promote the GMR. By annealing at 400 °C, the GMR is entirely suppressed as the magnetic content is largely replaced by oxides. PACS 72.15.Eb; 75.47.De; 75.47.Np     

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

An ultra-thin Co or CoFe diffusion barrier inserted at the NiFe/Cu interfaces was revealed to effectively control the electrical and magnetic stability of NiFe/Cu/NiFe-based giant magnetoresistance (GMR) spin-valve spintronics devices (SVSDs) operating at high current density. It was found that the activation energy, E_a, related to the electromigration (EM)-induced inter-diffusion process for the patterned NiFe(3)/Cu(2)/NiFe(3 nm) magnetic multi-layered devices (MMLD) was remarkably increased from 0.52±0.2 eV to 1.17±0.16 eV after the insertion of an ultra-thin Co diffusion barrier at the NiFe/Cu interfaces. The dramatically reduced “current shunting paths” from the Cu spacer to the NiFe thin films and the development of “self-healing process” resulted from the effectively restrained Cu inter-diffusion (intermixing with Ni atoms) due to the diffusion barriers were found to be primarily responsible for the improvement of electrical and magnetic stability. The further investigation on the effects of controlling Cu spacer inter-diffusion by diffusion barriers on the EM and thermomigration (TM)-induced magnetic degradation was carried out for the NiFe/(Co or Co₉₀Fe₁₀)/Cu/(Co or Co₉₀Fe₁₀)/NiFe/FeMn top exchange-biased GMR (EBGMR) SVSDs electrically stressed under the applied DC current density of J=2.5×10⁷ A/cm² (I=16.5∼17.25 mA). It was clearly confirmed that the Co and the CoFe diffusion barriers effectively control the Cu spacer inter-diffusion resulting in a smaller reduction in both GMR ratio and exchange bias field of the EBGMR SVSDs. Furthermore, it was obviously observed that the effects of CoFe diffusion barrier on controlling the Cu spacer inter-diffusion are more significant than that of Co. The effectively reduced Mn atomic inter-diffusion at the NiFe/FeMn interface and the well-maintained interfacial spin-dependent scattering resulted from the control of EM and TM-induced Cu spacer inter-diffusion were the main physical reasons for the significant improvement of magnetic and electrical degradation of top EBGMR SVSDs.     

Magnetoresistance effect in A 2(FeMo)Ox double perovskites (A = Sr, Ca; 5.90≤x≤6.05)

The dependences of magnetic, electric, and magnetotransport properties on oxygen non stoichiometry were investigated in compounds of Ca₂(FeMo)O_x and Sr₂(FeMo)O_x (5.90≤x≤6.05). The regular trends in behavior of the magnetization, resistance, and magnetoresistance of samples of these series are determined. It is established that the magnetoresistance is composed of two parts that appear as a result of magnetic ordering in grain-boundary layers and of the intergrain transport of spin-polarized charge carriers. The electronic transport in the samples is assumed to be governed by percolation processes between grains which have a metallic type of conductivity and are separated by insulating spacers.     

Dual spin valves with nano-oxide layers

A novel method is proposed for increasing the giant magnetoresistance (GMR) of dual spin valves of the CoFe/Cu/CoFe/Cu/CoFe type by inserting nano-oxide layers (NOLs) into the pinned layers. Using this method, MR ratio of 23.5% was obtained, a value equal to those of specular spin valves with antiferromagnetic oxide, e.g., NiO. This method allows the selection of metallic materials for the antiferromagnetic layer. In addition, we obtained the specularity factor of upper NOLs, 0.8, and that of lower NOLs, 0.7, by calculating Boltzmann equations taking into account the roughness of each interlayer. This model shows that the MR ratio would be 27.5% for dual spin valves with ideal NOLs.     

Effect of isovalent doping of manganite (La1?xPrx)0.7Ca0.3MnO3 films (0≤x≤1) on their optical, magnetooptical, and transport properties near the metal-insulator transition

The optical, magnetooptical, and electric properties of epitaxial (La_1−x Pr_x)_0.7Ca_0.3MnO₃ films (0≤x≤1) grown by MOCVD on LaAlO₃ and SrTiO₃ substrates were studied. It is shown that the decrease in the average cation radius resulting from isovalent substitution of the Pr for La ions brings about a lowering of the Curie temperature, the metal-insulator transition temperature, and the temperatures of the maxima in magnetotransmission (MT) and magnetoresistance (MR). These temperatures depend only weakly on the substrate type. Substitution of La by Pr does not change the shape of the spectral response of the transverse Kerr effect. For concentrations x≤0.50, the maximum values of the Kerr effect and of the MT vary insignificantly, which should be assigned to the existence of a singly connected ferromagnetic metallic region at low temperatures. In films with x=0.75, the presence of ferromagnetic metallic drops in an antiferromagnetic insulating matrix was revealed. The totality of the experimental data obtained suggest that nanoscopic magnetic and electronic nonuniformities exist both in films with a singly connected metallic region and in an x=1 film, which is an antiferromagnetic insulator. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 7, 2004, pp. 1203–1213. Original Russian Text Copyright ? 2004 by Sukhorukov, Loshkareva, Gan’shina, Kaul’, Gorbenko, Mostovshchikova, Telegin, Vinogradov, Rodin.     

Theory of the giant magnetoresistance in La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>A<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript>

To clarify the origin of the giant magnetoresistance (GMR) observed in La_1?x A _x MnO₃ (A²⁺=Sr²⁺, Pb²⁺, Ba²⁺ and Ca²⁺), we have investigated theoretically the electrical resistivity ρ of carriers in the background of Mn spins which interact with each other through the double exchange interaction. It has been found that extraordinarily large pin fluctuations caused by the instability of the ferromagnetic state are responsible for the transport anomalies including the GMR.     

Conductivity, magnetoresistance, and the Hall effect in granular Fe/SiO2 films

We have investigated the conductance, magnetoresistance, and Hall effect in granular Fe/SiO₂ films with size of the iron grains around 40 Å, whose volume fraction x lies in the range 0.3–0.7. The conduction activation regime has been established for x<0.6. On the insulator side of the transition we observed a giant negative magnetoresistance, falling off sharply as the metal volume fraction decreases. For x<0.4 we observed a large positive magnetoresistance of premagnetized samples, showing up in fields; ～100 Oe and characterized by large response times. The field dependence of the Hall effect in the dielectric samples, as in the metallic samples, correlates with their magnetization. We found that the Hall resistance is proportional to the square root of the longitudinal resistance, which cannot be explained by known models of the anomalous Hall effect.