太赫兹量子级联激光器研究进展

太赫兹技术涉及电磁学、光电子学、半导体物理学、材料科学以及微加工技术等多个学科,它在信息科学、生物学、医学、天文学、环境科学等领域有重要的应用价值.太赫兹辐射源是太赫兹频段应用的关键器件.本文简要介绍了太赫兹电磁波的研究背景、重要特点以及潜在应用,重点讨论了太赫兹半导体量子级联激光器的工作原理和研究进展等.     

基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置. 关键词： 太赫兹量子阱探测器 太赫兹量子级联激光器 太赫兹通信 Fourier变换红外光谱     

基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置.     

基于太赫兹量子级联激光器的无线信号传输的实现

文章采用连续波激射的太赫兹量子级联激光器(THz QCL) 为发射端、光谱匹配的THz量子阱探测器(THz QWP) 为接收端, 搭建了基于THz波的无线传输演示系统. 测量并分析了该演示系统的传输带宽. 采用搭建的无线传输系统演示了基于4.13 THz电磁波的图片文件的无线传输过程, 得到了与源文件一致的结果, 验证了采用THz QCL和THz QWP进行THz信号无线传输的可行性.最后, 分析了演示系统的传输速率, 给出了提高系统传输速率的方法.     

半绝缘等离子体波导太赫兹量子级联激光器工艺研究

采用气态源分子束外延设备生长了GaAs/AlGaAs束缚态到连续态跃迁结构的太赫兹（THz）量子级联激光器（QCL）有源区结构,研究了半绝缘等离子体波导THz QCL的器件工艺,采用远红外傅里叶变换光谱仪以及探测器测量了器件的电光特性.器件激射频率为32 THz,10 K下的阈值电流密度为275 A/cm². 关键词： 太赫兹 量子级联激光器 波导 器件工艺     

太赫兹量子级联激光器光束特性分析

用有限元法计算太赫兹量子级联激光器激光模式的阈值增益.结果表明:接触层厚度和掺杂浓度对阈值增益的影响远远大于波导宽度和激射波长;接触层厚度较小(大)和掺杂浓度较低(高)时,TM₁(TM₀)模的阈值增益较小.在此基础上,用矢量衍射理论分析岀射光束的远场特性,得到光束的远场光斑基本是椭圆;x方向的远场散射角随波导宽度或激射波长的增加分别线性减小或增加,尽管对应的接触层厚度和掺杂浓度不同,但TM₀和TM₁模x方向的远场散射角相同;另外,还得到y方向远场散射角不受波导宽度或少受激射波长的影响.在阈值增益和光束质量方面,TM₁模都优于TM₀模.     

基于太赫兹量子级联激光器的实时成像研究进展

太赫兹(THz)实时成像是THz技术中颇具潜力的一个领域,具有成像速度快、成像分辨率高等特点,基于THz量子级联激光器(QCL)的实时成像系统是其中最重要的一种,系统体积小、重量轻、成像信噪比高等特点使其在实际应用中具有独特的优势。本文主要介绍了THz QCL器件及其实时成像系统的研究进展,采用超半球高阻硅透镜改善了THz QCL的输出激光,实现了准高斯光束输出,搭建了基于二维摆镜消干涉技术的THz实时成像系统,单帧成像光斑面积45mm×30 mm,实现了对刀片、药片的实时成像演示,成像分辨率优于0.5 mm;最后对成像系统激光源、成像光路和探测端的改进以及成像效果的改善方面进行了综述,并探讨了THz实时成像系统未来的发展趋势及其在材料分析和生物医学成像方面的应用前景。     

太赫兹量子级联激光器频率梳的色散

群速度色散会限制太赫兹量子级联激光器频率梳的稳定以及频谱宽度.对于太赫兹量子级联激光器频率梳,其色散主要由器件增益、波导损耗、材料损耗引起.研究基于4.2 THz量子级联激光器双面金属波导结构,通过建立德鲁德模型,利用有限元法计算了激光器的波导损耗;器件未钳制的增益由费米黄金定则计算得到,结合增益钳制效应,计算了器件子带电子跃迁吸收以及镜面损耗,得到了器件钳制后的增益;利用Kramers-Kronig关系得到了器件的增益、波导损耗、材料损耗引起的色散,结果表明器件的激射区域存在非常严重的色散(–8×10~5—8×10~5 fs~2/mm).同时,计算了一种基于Gires-Tournois干涉仪结构的色散,结果表明,该结构的色散具有周期性,可以用于太赫兹量子级联激光器的色散补偿.     

移动式量子级联激光器太赫兹全息成像仪光路结构设计

为了满足移动式量子级联激光器太赫兹（QCL-THz）全息成像仪大视场高空间分辨率的技术需求,设计了预放大同轴数字全息光路结构,显微物镜数值孔径为0.707或0.8,放大倍数为6倍,最佳工作距离为15 mm。采用波长为96.8 m的QCL光源,该光路结构能实现10 mm的视场,优于100 m的空间分辨率。     

移动式量子级联激光器太赫兹全息成像仪光路结构设计

为了满足移动式量子级联激光器太赫兹(QCL-THz)全息成像仪大视场高空间分辨率的技术需求,设计了预放大同轴数字全息光路结构,显微物镜数值孔径为0.707或0.8,放大倍数为6倍,最佳工作距离为15mm。采用波长为96.8μm的QCL光源,该光路结构能实现10mm的视场,优于100μm的空间分辨率。     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

Potential‐inserted quantum well design for quantum cascade terahertz lasers

We report on a new design of terahertz quantum cascade laser based on a single, potential‐inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight‐binding calculations, and performances are compared to that of the classical three‐well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature‐independent contrast between phonon‐induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.     

High power-efficiency terahertz quantum cascade laser

We demonstrate continuous-wave(CW) high power-efficiency terahertz quantum cascade laser based on semiinsulating surface-plasmon waveguide with epitaxial-side down(Epi-down) mounting process.The performance of the device is analyzed in detail.The laser emits at a frequency of ~3.27 THz and has a maximum CW operating temperature of ~ 70 K.The peak output powers are 177 mW in pulsed mode and 149 mW in CW mode at 10 K for 130-μm-wide Epi-down mounted lasers.The record wall-plug efficiencies in direct measurement are 2.26% and 2.05% in pulsed and CW mode,respectively.     

Very low threshold operation of quantum cascade lasers

A strain-compensated InP-based quantum cascade laser(QCL) structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy(MBE).By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm~2 in pulsed operation and 0.56 kA/cm~2 in continuous-wave(cw) operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity(HR) coating on its rear facet.     

Si/SiGe量子级联激光器研究进展

Si／SiGe量子级联激光器是一种新型的带内跃迁的红外光源，突破了Si基材料间接带隙特性对光跃迁的限制。Si/SiGe量子级联激光器的开发将为实现太赫兹有源器件的硅基集成产生深远影响。文章介绍了Si/SiGe量子级联激光器的工作原理，以及这类激光器在能带设计、材料生长和波导制作方面的最新进展。     

Periodic and chaotic oscillations in mutual-coupled mid-infrared quantum cascade lasers

Dynamic states in mutual-coupled mid-infrared quantum cascade lasers (QCLs) were numerically investigated in the parameter space of injection strength and detuning frequency based on the Lang—Kobayashi equations model. Three types of period-one states were found, with different periods of injection time delay τ_inj, 2τ_inj, and reciprocal of the detuning frequency. Besides, square-wave, quasi-period, pulse-burst and chaotic oscillations were also observed. It is concluded that external-cavity periodic dynamics and optical modes beating are the mainly periodic dynamics. The interaction of the two periodic dynamics and the high-frequency dynamics stimulated by strong injection induces the dynamic states evolution. This work helps to understand the dynamic behaviors in QCLs and shows a new way to mid-infrared wide-band chaotic laser.     

The progress towards terahertz quantum cascade lasers on silicon substrates

A review is presented of work over the last 10 years which has been aimed at trying to produce a Si‐based THz quantum cascade laser. Potential THz applications and present THz sources will be briefly discussed before the materials issues with the Si/SiGe system is discussed. Waveguide designs and waveguide losses will be presented. Experimental measurements of the non‐radiative lifetimes for intersubband transitions in Si_1‐xGe_x quantum wells will be presented along with theory explaining the important scattering mechanisms which determine the lifetimes. Examples of p‐type Si/SiGe quantum cascade designs with the experimental electroluminescence will be reviewed and examples of n‐type Si‐based designs will be presented. In the conclusion designs and structures will be discussed with the greatest potential to achieve an electrically pumped Si‐based THz laser.     

Microcavity THz quantum cascade laser

We report operation of disk and ring shaped terahertz (THz) quantum-cascade lasers (QCLs) emitting in the THz region between 3.0 and 3.4 THz. The GaAs/Al_0.15Ga_0.85As heterostructure is based on longitudinal-optical phonon scattering for depopulation of the lower radiative state. A double metal waveguide is used to confine the whispering gallery modes in the gain medium. The threshold current density is at 5 K. 3D Finite-Difference Time-Domain (FDTD) simulations were performed to obtain the field distributions within a THz QCl resonator at different frequencies.     

太赫兹量子级联激光器中有源区上激发态电子向高能级泄漏的研究

利用热力学统计理论和激光器输出特性理论,建立了太赫兹量子级联激光器(THz QCL)有源区中上激发态电子往更高能级电子态泄漏的计算模型,以输出功率度量电子泄漏程度研究分析了晶格温度和量子阱势垒高度对电子泄漏的影响.数值仿真结果表明,晶格温度上升会加剧电子泄漏,并且电子从上激发态泄漏到束缚态的数量大于泄漏到阱外连续态,同时温度的上升也会降低激光输出功率.增加量子阱势垒高度能抑制电子泄漏,并且有源区量子阱结构中存在一个最优量子阱势垒高度. THz QCL经过最优量子阱势垒高度优化后,工作温度得到提升,其输出功率相比于以往的结果也有所提高.研究结果对优化THz QCL有源区结构、抑制电子泄漏和改善激光器输出特性有指导作用.