醋酸锌热解温度对ZnO纳米棒的结构及光学性质的影响

采用水热法在普通载玻片上热解醋酸锌生成的ZnO种子层上制备ZnO纳米棒, 采用 X射线衍射仪、扫描电镜、分光光度计等测试手段详细研究了醋酸锌热解温度对 ZnO纳米棒的结构和光学性质的影响. 结果表明: 纳米棒的结晶质量、端面尺寸、宏观应力和透射率与醋酸锌热解温度有密切关系. 随着热解温度的增加, ZnO纳米棒具有的c轴择优取向性先增强后减弱, 拉应力先减小后增大, 可见光区的平均透射率先增大后减小. 热解温度为350 ℃时, ZnO纳米棒c轴择优取向性最强, 拉应力最小, 平均透射率最大. 端面尺寸诱导的表面散射 是影响ZnO纳米棒可见光区平均透射率的主要机制. 关键词： 醋酸锌 水热法 ZnO纳米棒     

Al和Sb共掺对ZnO有序阵列薄膜的结构和光学性能的影响

采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜. 通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成, 呈单晶六角纤锌矿ZnO结构, 且沿[001]方向择优生长, 纳米棒的平均直径和长度分别为27.8 nm和1.02 μm. Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580 cm^-1), Al和Sb共掺ZnO阵列薄膜的E₁(LO)振动模式存在拉曼位移. 当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时, Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12 cm^-1. E₁ (LO) 振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的. 室温光致发光结果表明:掺杂Al和Sb后, ZnO薄膜在545 nm处的发光强度减小,在414 nm处的发光强度增加. 这是由于掺杂Al和Sb后, ZnO薄膜中Zn_i缺陷增加, O_i缺陷减少引起的. 关键词： Al和Sb共掺ZnO薄膜 纳米棒有序阵列 结构表征 拉曼散射     

粉末靶制备的AZO/Ag/AZO透明导电薄膜的光电性能

室温下,采用射频磁控溅射AZO粉末靶和Ag靶在玻璃基底上制备Ag层厚度分别为12 nm和15 nm两组对称结构掺铝氧化锌/银/掺铝氧化锌(AZO/Ag/AZO)透明导电薄膜,研究了Ag层和AZO层厚度对薄膜光电性能的影响。结果表明:3层薄膜的可见光区平均透光率达到了80%,550 nm处的最高透过率达到了88%,方块电阻小于5 Ω/□。Ag层厚度是影响AZO/Ag/AZO薄膜光电性能的主要因素,AZO层的厚度对薄膜光学性能影响较大。     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

水热合成ZnO:Cd纳米棒的微结构及光致发光特性

采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性.结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小.由于内部张应力的影响,Cd掺杂使得材料光学带隙减少.当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.     

Ag掺杂氧化锌纳米材料的制备及高压相变拉曼光谱研究

宽禁带直接带隙半导体材料氧化锌（ZnO）,具有优异的光电性能、机械性能和化学特性。ZnO材料的结构对其性能影响较大,元素掺杂可改变ZnO晶体结构和带隙宽度,是提升ZnO材料性能的有效手段,当前常用Ag掺杂ZnO即为提高光催化反应效率。高压独立于温度、成分,是调控材料结构组织性能的重要手段,是产生新材料、发现新调控原理的重要因素。该研究通过对比纯ZnO晶体和Ag掺杂ZnO晶体的高压相变行为,揭示了元素掺杂对ZnO纳米晶体材料结构性能的影响。研究首先采用水热法辅助制备纯ZnO纳米微球和Ag掺杂ZnO纳米微球（1∶150Ag/ZnO）,表征结果显示水热法合成的纯ZnO和1∶150Ag/ZnO均为六角纤锌矿晶体结构,形貌均为几十纳米尺寸小颗粒堆积形成的微球,ZnO晶格常数随着Ag离子掺杂而变大,Ag掺杂导致ZnO晶格膨胀。随后应用金刚石压腔结合原位拉曼光谱技术测定了纯ZnO和Ag掺杂ZnO的高压结构相变行为。相比于纯ZnO拉曼峰,Ag掺杂ZnO的E₂（high）振动模式439 cm-1拉曼峰峰宽变窄,并呈现向低频方向移动的趋势,与无定形ZnO谱峰相近,表明Ag+取代Zn2+影响了Zn-O键,同时也影响了ZnO晶格结构的长程有序性。随体系压力增大,表征六角纤锌矿结构ZnO的拉曼特征峰439 cm-1出现瞬间弱化和宽化。压力增大至9.0 GPa时,纤锌矿结构ZnO拉曼特征峰439 cm-1消失,585 cm-1处出现新峰,ZnO晶体发生由六角纤锌矿向岩盐矿的结构转变。压力继续增大至11.5 GPa,新的拉曼峰显著增强,峰形变窄,同时向高波数方向移动,相变完成,岩盐矿结构ZnO性能稳定。1∶150 Ag/ZnO从六角纤锌矿结构到立方岩盐结构的相变压力为7.2 GPa,低于纯ZnO。相变压力降低表明晶体结构稳定性下降,可能的原因在于掺杂Ag导致ZnO晶格膨胀,晶体结构松弛,两相相对体积变化增加,从而导致相变势垒降低,使样品在较低压力下发生相变。纳米材料的高压研究揭示了元素掺杂对材料结构稳定性的影响,是纳米材料调控原理的潜在研究手段。     

用粉末靶在玻璃和PI衬底上制备AZO/Ag/AZO薄膜

室温下在玻璃和聚酰亚胺两种不同衬底上, 采用射频磁控溅射法溅射掺铝氧化锌(AZO)粉末靶和固体Ag靶, 制备了两组AZO/Ag/AZO 3层透明导电薄膜, 研究了AZO层厚度对不同衬底3层膜结构和光电性能的影响.结果表明:不同衬底的两组AZO/Ag/AZO薄膜均为多晶膜.当Ag层厚度不变时, 随着AZO层厚度的增加, 两组薄膜电学性能变化不大, 透射峰向长波方向移动.玻璃和PI衬底上制备的AZO(30 nm)/Ag(14 nm)/AZO(30 nm)薄膜, 在550 nm处的透光率分别为85%和70%, 方块电阻分别为2.6 Ω/□和4.6 Ω/□.     

水热法制备Co掺杂ZnO纳米棒及其光学性能

采用水热法在石英衬底上以Zn(CH3COO)2.2H2O和Co(NO3)2.6H2O水溶液为源溶液,以C6H12N4(HMT)溶液作为催化剂,在较低温度下制备了Co掺杂的ZnO纳米棒。采用X射线衍射(XRD)和扫描电子显微镜(SEM)对所生长ZnO纳米棒的晶体结构和表面形貌进行了表征,考察了Co掺杂对ZnO纳米棒微观结构和对发光性能影响的机制。结果表明:Co掺杂的ZnO纳米棒呈六方纤锌矿结构,具有沿(002)面择优生长特性,Co掺杂使ZnO纳米棒的直径变细;同时室温光致发光(PL)谱检测显示Co掺杂ZnO纳米棒具有很强的近带边紫外发光峰,而与深能级相关的缺陷发光峰则很弱。本研究采用水热法在石英衬底上于较低温度下生长出了具有较高光学质量的Co掺杂ZnO纳米棒。     

聚合物纳米复合电解质(PEO)8-ZnO-LiClO4微结构及电导率研究

以聚氧化乙烯(PEO)为基质,成功制备出纳米ZnO掺杂的(PEO)₈-ZnO-LiClO₄离子导电聚合物电解质,并利用多种实验技术,包括扫描电子显微镜、X射线衍射(XRD)、傅里叶变换红外光谱和正电子湮没寿命谱(PALS),系统地研究了纳米ZnO与基质间相互作用及其对聚合物链段运动、纳米尺度自由体积、离子输运和复合电解质电导率的影响.实验结果发现,纳米ZnO的掺杂使聚合物电解质的离子电导率得到了大幅度提高,当ZnO与PEO质量比为6%时达到最大,(PEO)₈-ZnO-LiClO₄的电导率为1.82×10^-4 S ·cm^-1,比(PEO)₈-LiClO₄的电导率(6.58×10^-5 S ·cm^-1)提高了大约一个数量级.XRD结果显示,纳米ZnO的加入降低了PEO的结晶性,增加了锂离子传输的非晶相,从而提高了电导率.离散PALS测量结果表明,随着纳米ZnO的加入,复合电解质的自由体积、浓度和相对自由体积分数f_r均增加.连续PALS分析揭示了自由体积的分布由一个峰劈裂成两个峰,表明纳米ZnO的掺杂对聚合物的微结构有很大影响.基于实验测量的f_r和离子电导率,研究了离子导电机理.研究发现, f_r与电导率之间存在一个直接关系,即f_r越大,越有利于锂离子的传输,导致电导率越大.这个结果支持聚合物电解质导电的自由体积理论. 关键词： 正电子湮没寿命谱 聚合物纳米复合电解质 离子电导率 自由体积     

垂直取向FePt/Ag纳米颗粒薄膜的结构和磁性

用磁控溅射法在单晶MgO(100)基片上制备了［FePt 2 nm/Ag dnm］₁₀多层膜， 经真空热处理后，得到具有高矫顽力的垂直取向L1₀-FePt/Ag颗粒膜.x射线衍射结 果表明，在250 ℃的热基片上溅射，当Ag层厚度d=3—11 nm时，FePt颗粒具有很好的［001］取向，随着Ag层厚度的增加，FePt颗粒尺寸减小.［FePt 2 nm/Ag 9 nm］₁₀经过6 00 ℃真空热处理15 min后，颗粒大小仅约8 nm，垂直矫顽力达到692 kA/m.这种无磁耦合作用的颗粒膜，适合用作超高密度的垂直磁记录介质. 关键词： 磁控溅射 垂直磁记录 纳米颗粒膜 0-FePt/Ag')" href="#">L1₀-FePt/Ag     

Ag-doped ZnO nanorods synthesized by two-step method

A two-step method is adopted to synthesize Ag-doped ZnO nanorods.A ZnO seed layer is first prepared on a glass substrate by thermal decomposition of zinc acetate.Ag-doped ZnO nanorods are then assembled on the ZnO seed layer using the hydrothermal method.The influences of the molar percentage of Ag ions to Zn ions(RAg/Zn) on the structural and optical properties of the ZnO nanorods obtained are carefully studied using X-ray diffractometry,scanning electron microscopy and spectrophotometry.Results indicate that Ag ions enter into the crystal lattice through the substitution of Zn ions.The<002>c-axis-preferred orientation of the ZnO nanorods decreases as RAg/Zn increases.At RAg/Zn >1.0%,ZnO nanorods lose their c-axis-preferred orientation and generate Ag precipitates from the ZnO crystal lattice.The average transmissivity in the visible region first increases and then decreases as R Ag/Zn increases.The absorption edge is first blue shifted and then red shifted.The influence of Ag doping on the average head face,and axial dimensions of the ZnO nanorods may be optimized to improve the average transmissivity at RAg/Zn <1.0%.     

Electrical properties and Raman scattering investigation of Ag doped ZnO thin films

Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm^?1 induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LV M_Zn?Ag) and Zn sites (LV M_Ag?O) in ZnO lattice. Moreover, we further studied the effect of donor Ag_O and acceptor Ag_Zn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of Ag_O defects and enhance Ag_Zn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition.     

The effect of Al doping on the morphology and optical property of ZnO nanostructures prepared by hydrothermal process

The undoped and Al-doped ZnO nanostructures were fabricated on the ITO substrates pre-coated with ZnO seed layers using the hydrothermal method. The undoped well-aligned ZnO nanorods were synthesized. When introducing the Al dopant, ZnO shows various morphologies. The morphology of ZnO changes from aligned nanorods, tilted nanorods, nanotubes/nanorods to the nanosheets when the Al doping concentrations increase. The ZnO nanostructures were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence and Raman technology. The Al doping concentrations play an important role on the morphology and optical properties of ZnO nanostructures. The possible growth mechanism of the ZnO nanostructures was discussed.     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

A comparative study of the microstructures and optical properties of Cu- and Ag-doped ZnO thin films

Cu- and Ag-doped ZnO films were deposited by direct current co-reactive magnetron sputtering technique. The microstructure, the chemical states of the oxygen, zinc, copper and silver and the optical properties in doped ZnO films were investigated by X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. XRD analysis revealed that both of Cu- and Ag-doped ZnO films consist of single phase ZnO with zincite structure while the doping elements had an evident effect on the (0 0 2) preferential orientation. The XPS spectra showed that the chemical states of oxygen were different in Cu- and Ag-doped ZnO thin films, which may lead to the shift of the band gap as can be observed in the transmittance and absorption spectra. Meanwhile, the widths of band tails of ZnO films became larger after Cu and Ag doping.     

Aqueous chemical growth of free standing vertical ZnO nanoprisms,nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity

Tuning the morphology, size and aspect ratio of free standing ZnO nanostructured arrays by a simple hydrothermal method is reported. Pre-coated ZnO seed layers of two different thicknesses (≈350 nm or 550 nm) were used as substrates to grow ZnO nanostructures for the study. Various parameters such as chemical ambience, pH of the solution, strength of the Zn²⁺ atoms and thickness of seed bed are varied to analyze their effects on the resultant ZnO nanostructures. Vertically oriented hexagonal nanorods, multi-angular nanorods, hexagonal diskette and popcorn-like nanostructures are obtained by altering the experimental parameters. All the produced nanostructures were analysed by X-ray powder diffraction analysis and found to be grown in the (002) orientation of wurtzite ZnO. The texture co-efficient of ZnO layer was improved by combining a thick seed layer with higher cationic strength. Surface morphological studies reveal various nanostructures such as nanorods, diskettes and popcorn-like structures based on various preparation conditions. The optical property of the closest packed nanorods array was recorded by UV-VIS spectrometry, and the band gap value simulated from the results reflect the near characteristic band gap of ZnO. The surface roughness profile taken from the Atomic Force Microscopy reveals a roughness of less than 320 nm.     

Studies on structural and magnetic properties of Co-doped pyramidal ZnO nanorods synthesized by solution growth technique

Large-area arrays of highly oriented Co-doped ZnO nanorods with pyramidal hexagonal structure are grown on silica substrates by wet chemical decomposition of zinc–amino complex in an aqueous medium. In case of undoped ZnO with an equi-molar ratio of Zn²⁺/hexamethylenetetramine (HMT), highly crystalline nanorods were obtained, whereas for Co-doped ZnO, good quality nanorods were formed at a higher Zn²⁺/HMT molar ratio of 4:1. Scanning electron microscope (SEM) studies show the growth of hexagonal-shaped nanorods in a direction nearly perpendicular to the substrate surface with a tip size of ～50 nm and aspect ratio around 10. The XRD studies show the formation of hexagonal phase pure ZnO with c-axis preferred orientation. The doping of Co ions in ZnO nanorods was confirmed by observation of absorption bands at 658, 617 and 566 nm in the UV–vis spectra of the samples. The optical studies also suggest Co ions to be present both in +2 and +3 oxidation states. From the photoluminescence studies, a defect-related emission is observed in an undoped sample of ZnO at 567 nm. This emission is significantly quenched in Co-doped ZnO samples. Further, the Co-doped nanorods have been found to show ferromagnetic behavior at room temperature from vibrating sample magnetometer (VSM) studies.     

Plasmonic enhancement of blue emission from ZnO nanorods grown on the anodic aluminum oxide (AAO) template

Luminescent properties of ZnO nanorods covered with Ag nanoparticles are examined. Nanorods were synthesized on AAO templates using Atomic Layer Deposition (ALD) technique. Two types of the samples were prepared with different arrangement of ZnO nanorods and doping conditions. Nanorods of the second type were codoped with Al, to stimulate defect-related emissions. The ZnO material fills heterogeneously the interior of the AAO nanopores and has hexagonal, wurtzite structure. Both types of structures exhibit a broad defect-related emission at about 440 nm, most probably related to recombination at zinc interstitial (Zn_i) defects. This emission in samples with a random distribution of ZnO:Al nanorods and finer Ag nanoparticles is enhanced by factor of ～2.5 upon Ag deposition. The so-obtained material is interesting from the point of view of its application in blue range emitting diodes.     

Effect of growth temperature on characteristics of Cr-doped ZnO nanorods by magnetron sputtering

Cr-doped ZnO nanostructures, in well-aligned Zn_0.92Cr_0.06O nanorods array, were synthesized by radio frequency (RF) magnetron sputtering deposition at different temperatures. The effects of growth temperature on the structure and optical properties of Zn_0.92Cr_0.06O nanorods were investigated in terms of scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectra, X-ray photoelectron spectroscopy (XPS) and spectrophotometer. With increase the growth temperature, Zn_0.94Cr_0.06O nanorods have a strong improved crystalline quality. High growth temperature enhances the build-in electric field in the depletion region in the grain of the nanorods, which trap free carriers from the bulk of the grains. XPS results shows that Cr³⁺ ions substitute Zn²⁺ ions, and no secondary phases in the sample are found, meanwhile the oxygen vacancies decrease with increasing growth temperature. The high growth temperature causes a significant increase in optical transmittance of the Zn_0.92Cr_0.06O nanorods, which can be attributed to the weakening of scattering and absorption of light because of the increase of grain size. The red shift of the optical band gap can be mostly likely related to the Burstein–Moss effect.