The short-range correlations of a doped Mott insulator

This paper presents numerical studies of the single hole model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to this interplay, two different spin correlations coexist around a mobile vacancy. These local correlations provide an effective two-band picture that explains the two-band structure observed in various theoretical and experimental studies, the doping dependence of the momentum space anisotropic pseudogap phenomena and the asymmetry between hole and electron doped cuprates.     

Self-localization of holes in a lightly doped Mott insulator

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperature, resulting in spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T_c cuprates. Disorder and impurities only play a minor and assistant role here.     

Critical behaviour near the metal-insulator transition of a doped Mott insulator

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value U _c, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping. Received 15 March 2001 and Received in final form 22 May 2001     

Quantum phases in a doped Mott insulator on the Shastry-Sutherland lattice

We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave resonating valence bond superconductors in which superconductivity is strongly enhanced by the emergence of spatially varying plaquette bond order.     

Local moment formation in the superconducting state of a doped Mott insulator

A microscopic theory is presented for the local moment formation near a nonmagnetic impurity or a copper defect in high-Tc superconductors. We use a renormalized mean-field theory of the t-J model for a doped Mott insulator and study the fully self-consistent, spatially unrestricted solutions of the d-wave superconducting (SC) state in both the spin S=0 and S=1/2 sectors. We find a transition from the singlet d-wave SC state to a spin doublet SC state when the renormalized exchange coupling exceeds a doping dependent critical value. The induced S=1/2 moment is staggered and localized around the impurity. It arises from the binding of an S=1/2 nodal quasiparticle to the impurity. The local density of states is calculated and connections to NMR and STM experiments are discussed.     

Nodal-antinodal dichotomy and the two gaps of a superconducting doped Mott insulator

We study the superconducting state of the hole-doped two-dimensional Hubbard model using cellular dynamical mean-field theory, with the Lanczos method as impurity solver. In the underdoped regime, we find a natural decomposition of the one-particle (photoemission) energy gap into two components. The gap in the nodal regions, stemming from the anomalous self-energy, decreases with decreasing doping. The antinodal gap has an additional contribution from the normal component of the self-energy, inherited from the normal-state pseudogap, and it increases as the Mott insulating phase is approached.     

Correlation-driven charge order at the interface between a Mott and a band insulator

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory within the local density approximation including a Hubbard U to (n, m) multilayers, 1相似文献   

Resonating-valence-bond States and ferromagnetic correlations in the doped triangular Mott insulator

The two-dimensional t-J model on a triangular lattice is studied using high-temperature expansions. By studying the entropy and spin susceptibility, we find that the sign of the hopping integral t is very crucial. In the case of t>0, the peak of the spin susceptibility moves to the high-temperature region with hole doping, which indicates the appearance of the resonating-valence-bond state. In contrast, for t<0, the peak of the spin susceptibility disappears with hole doping and the entropy at low temperatures behaves as S=gammaT with large coefficient gamma, representing a large effective mass. This behavior is understood from the competition between Nagaoka's ferromagnetism and singlet formation.     

Photoemission of a doped Mott insulator: spectral weight transfer and a qualitative Mott-Hubbard description

The spectral weight evolution of the low-dimensional Mott insulator TiOCl upon alkali-metal dosing has been studied by photoelectron spectroscopy. We observe a spectral weight transfer between the lower Hubbard band and an additional peak upon electron doping, in line with quantitative expectations in the atomic limit for changing the number of singly and doubly occupied sites. This observation is an unconditional hallmark of correlated bands and has not been reported before. In contrast, the absence of a metallic quasiparticle peak can be traced back to a simple one-particle effect.     

Hidden charge 2e Boson in doped Mott insulators

We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).     

Confinement-deconfinement interplay in quantum phases of doped Mott insulators

In the t-J model, the electron fractionalization is dictated by the phase string effect. We find that in the underdoped regime, the antiferromagnetic and superconducting phases are dual: in the former, holons are confined while spinons are deconfined, and vice?versa in the latter. These two phases are separated by a novel phase, the so-called Bose-insulating phase, where both holons and spinons are deconfined. A pair of Wilson loops was found to constitute a complete set of order parameters determining this zero-temperature phase diagram. The quantum phase transitions between these phases are suggested to be of non-Landau-Ginzburg-Wilson type.     

Study of carrier doping across the parent Mott insulator La2CuO4

Ce substituted La₂CuO₄ single crystals are investigated to try doping electrons into the parent Mott insulator. Transport properties of slightly Ce substituted La₂CuO₄ show that carriers are still holes activated from an impurity level of which activation energy is the same as the parent La₂CuO₄.     

Superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice

The accessibility of the critical parameters for the superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice is investigated. We determine the hopping matrix element J, the on-site interaction U, and hence the ratio J/U, in the harmonic oscillator wave function approximation. We show that for a range of realistic parameters the critical values of J/U, predicted by different methods for the Bose-Hubbard model in 2D, such as mean field theory and Monte Carlo simulations, are accessible in a 2D permanent magnetic lattice. The calculations are performed for a 2D permanent magnetic lattice created by two crossed arrays of parallel rectangular magnets plus a bias magnetic field.     

Surface state charge dynamics of a high-mobility three-dimensional topological insulator

We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe, using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface-state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursuit of the topological magnetoelectric effect and axion electrodynamics.     

Atom-molecule Rabi oscillations in a Mott insulator

We observe large-amplitude Rabi oscillations between an atomic and a molecular state near a Feshbach resonance. The experiment uses 87Rb in an optical lattice and a Feshbach resonance near 414 G. The frequency and amplitude of the oscillations depend on the magnetic field in a way that is well described by a two-level model. The observed density dependence of the oscillation frequency agrees with theoretical expectations. We confirmed that the state produced after a half-cycle contains exactly one molecule at each lattice site. In addition, we show that, for energies in a gap of the lattice band structure, the molecules cannot dissociate.     

Coherent light scattering from a two-dimensional Mott insulator

We experimentally demonstrate coherent light scattering from an atomic Mott insulator in a two-dimensional lattice. The far-field diffraction pattern of small clouds of a few hundred atoms was imaged while simultaneously laser cooling the atoms with the probe beams. We describe the position of the diffraction peaks and the scaling of the peak parameters by a simple analytic model. In contrast to Bragg scattering, scattering from a single plane yields diffraction peaks for any incidence angle. We demonstrate the feasibility of detecting spin correlations via light scattering by artificially creating a one-dimensional antiferromagnetic order as a density wave and observing the appearance of additional diffraction peaks.     

Breakdown of a Mott insulator: a nonadiabatic tunneling mechanism

Time-dependent nonequilibrium properties of a strongly correlated electron system driven by large electric fields is obtained by means of solving the time-dependent Schr?dinger equation for the many-body wave function numerically in one dimension. While the insulator-to-metal transition depends on the electric field and the interaction, the metallization is found to be described in terms of a universal Landau-Zener quantum tunneling among the many-body levels. These processes induce current oscillation for small systems, while giving rise to finite resistivity through dissipation for larger systems/on longer time scales.     

Nonequilibrium nuclear-electron spin dynamics in semiconductor quantum dots

We study the spin dynamics in charged quantum dots in the situation where the resident electron is coupled to only about 200 nuclear spins and where the electron spin splitting induced by the Overhauser field does not exceed markedly the spectral broadening. The formation of a dynamical nuclear polarization as well as its subsequent decay by the dipole-dipole interaction is directly resolved in time. Because not limited by intrinsic nonlinearities, almost complete nuclear polarization is achieved, even at elevated temperatures. The data suggest a nonequilibrium mode of nuclear polarization, distinctly different from the spin temperature concept exploited on bulk semiconductors.