内掺氮富勒烯N_2@C_(60)的几何结构和电子性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对内掺氮富勒烯N2@C60的几何结构和电子性质进行计算研究.发现在N2@C60中,氮倾向以分子形式存在于C60中心处.键长分析、能级图、态密度图和电荷分析表明内掺氮分子对C60几何结构和电子结构带来的影响甚微.     

C72,La2@C72几何结构和电子性质的计算研究

采用密度泛涵理论(density functional theory, DFT)中的广义梯度近似(generally gradient approximation, GGA)对富勒烯C₇₂和内掺金属La富勒烯La₂@C₇₂三种同分异构体的几何结构和电子结构进行研究.发现在C₇₂的三种同分异构体中，满足独立五边形规则(isolated-pentagon-rule，IPR)的C₇₂(D_{6d< 关键词： 72}')" href="#">C₇₂ 2@C₇₂')" href="#">La₂@C₇₂ 密度泛涵理论 几何结构 电子结构     

The stability, frontier orbitals, bond character, and static linear polarizability of the fluorinated fullerene H20@C80F60

This paper uses the density functional theory under generalised gradient approximation to analyse the stability,frontier orbitals,bond character,and static linear polarizability of H20@C80F60,which has not been isolated,as well as those of the synthesised H 20 @C 80 H 60.The H20@C80F60 should be considerably stable by analysing its energy and aromaticity.The inside H and outside X will play different role in the chemical reaction involving H 20 @C 80 X 60(X=H and F).The covalence of C-H bond is in the order that the inside C-H bond of H20@C80F60 > the inside C-H bond of H 20 @C 80 H 60 > the outside C-H bond of H 20 @C 80 H 60,whereas the C-F bond of H20@C80F60 have both the covalent and ionic characters.The static linear polarizabilities of C 80 and H 20 @C 80 X 60(X=H and F) are all isotropic.     

Density functional calculations on the geometric structure and properties of the 3d transition metal atom doped endohedral fullerene M@C20F20（M=Sc-Ni）

This paper uses the generalised gradient approximation based on density functional theory to analyse the geometric structure and properties of the 3d transition metal atom doped endohedral fullerene M@C20F20(M=Sc-Ni).The geometric optimization shows that the cage centre is the most stable position for M,forming the structure named as M@C 20 F 20-4.The inclusion energy,zero-point energy,and energy gap calculations tell us that Ni@C 20 F 20-4 should be thermodynamically and kinetically stablest.M@C 20 F 20-4(M = Sc-Co) possesses high magnetic moments varied from 1 to 6 μ B,while Ni@C 20 F 20-4 is nonmagnetic.The Ni-C bond in Ni@C 20 F 20-4 contains both the covalent and ionic characters.     

内掺过渡金属富勒烯衍生物Ni@C20H20几何结构、成键和电磁性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对Ni@C₂₀H₂₀的几何结构、成键和电磁性质进行密度泛函计算研究.结构优化发现位于偏离笼子中心三种位置处的Ni原子优化之后均回到笼子中心.结合能和能隙分析表明C₂₀H₂₀的中心位置是Ni原子热力学和动力学最稳定的位置.成键分析表明：Ni原子位于C₂₀H₂₀中心时,和C原子之间几乎没有相互作用,保持自己的孤立状态.电磁分析表明：原子磁矩为2关键词： 20H₂₀')" href="#">C₂₀H₂₀ 20H₂₀')" href="#">Ni@C₂₀H₂₀ 几何结构 成键 电磁性质 密度泛函理论     

内掺过渡金属非典型富勒烯M@C22(M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni) 几何结构、电子结构、稳定性和磁性的密度泛函研究

采用密度泛函理论中广义梯度近似对非典型富勒烯C₂₂和过渡金属内掺衍生物M@C₂₂(M=Sc,Ti,V,Cr,Mn,Fe,Co和Ni)的几何结构和电子结构进行计算研究.发现非典型富勒烯C₂₂的基态结构是含有一个四碳环的单重态笼状结构.过渡金属原子的掺入明显提高了体系的稳定性. C-M键既有一定共价性又有一定离子性.磁性、能级图、轨道分布和态密度图分析表明: M原子的3d轨道和碳笼的C原子的原子轨道之间存在较强的轨道杂化. Ti, Cr, Fe和Ni内掺的结构出现磁性完全猝灭现象. Sc和碳笼间是弱反铁磁作用, V,Mn和Co与碳笼间是弱铁磁作用.     

外掺非典型富勒烯C64Si的几何结构和电子性质计算研究

采用密度泛函理论（density functional theory, DFT）中的广义梯度近似（generalized gradient approximation, GGA）对非典型富勒烯C₆₄Si的几何结构和电子性质进行计算研究,发现在C₆₄Si可能稳定存在的四种同分异构体中,Si原子吸附在三个直接相邻五边形的公共原子处形成的外掺杂结构是热力学最稳定的结构,即文中定义的C₆₄Si-1,这和Ge等人对 Si原子在C_{28关键词： 64}Si')" href="#">C₆₄Si 64')" href="#">C₆₄ 外掺富勒烯 密度泛函理论     

FePc与TiO2(110)及C60界面电子结构研究

基于C₆₀受体和有机分子给体的太阳能电池是目前非常重要的一个研究热点, 利用同步辐射真空紫外光电子能谱(SRUPS) 技术研究了酞菁铁(FePc)与TiO₂(110)及C₆₀的界面电子结构, 以及FePc与C₆₀分子混合薄膜的电子结构. SRUPS价带谱显示, FePc沉积在化学计量比与还原态两种不同的TiO₂(110)表面时, FePc分子的HOMO能级均随FePc厚度的变化发生了移动, 而在化学计量比的TiO₂(110)表面位移较大, 同时发生界面能带弯曲, 说明存在从有机层向衬底的电子转移. 在FePc/C₆₀和C₆₀/FePc界面形成过程中, FePc与C₆₀分子的最高占据分子轨道(HOMO)位移大小基本相同. 由界面能级排列发现, 在FePc与C₆₀的混合薄膜中, FePc分子的HOMO与C₆₀分子的最高占据分子轨道能级差较大, 这有利于提高器件开路电压, 改善器件性能.     

Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory

The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers.The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4.The S doptant is prone to substitute the N atom bonded with only two nearest C atoms.The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.     

H3PAuPh与(H3PAu)2(1,4-C6H4)2光谱性质的密度泛函研究

用密度泛函(DFT)方法优化了配合物H₃PAuPh(a),(H₃PAu)₂(1,4-C₆H₄)₂(b)的基态的几何结构,并用含时密度泛函方法计算了它们的吸收光谱.结果表明配合物a与 b的最低能量吸收谱线的波长分别为257.5 nm和307.6 nm,皆具有C(2p)→Au(6p)电荷转移参与下的p_π 关键词： 激发态 光谱 密度泛函 3')" href="#">AuPH₃     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

Ab initio investigations of the charge transport properties of endohedral M@C20（M=Na and K）metallofullerenes

Using density functional theory and quantum transport calculations based on nonequilibum Green’s function formalism,we investigate the charge transport properties of endohedral M@C 20 (M=Na and K) metallofullerenes.Our results show that the conductance of C 20 fullerene can be obviously improved by insertion of alkali atom at its centre.Both linear and nonlinear sections are found on the I-V curves of the Au-M@C 20-Au two-probe systems.The novel negative differential resistance behaviour is also observed in Na@C 20 molecule but not in K@C 20.     

密度泛函理论计算内掺富勒烯M@C60H60(M=Li、Na)的几何结构和电子性质

采用密度泛函理论中的广义梯度近似(generalized gradient approximation,简称GGA),对M@C_(60)H_(60) (M=Li、Na)几何结构和电子性质进行计算研究.发现M原子的平衡位置处在偏心位置处,并且稳定的存在于一个围绕中心的球体内;掺杂能计算表明:M@C_(60)H_(60)需要在一定的实验条件下才能被合成出来;电子性质分析表明:M原子掺入到C_(60)H_(60)中,对费米能级附近有一定贡献,并产生了1 μB的净磁矩.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

第一原理研究Sn(O1-xNx)2材料的光电磁性质

基于第一原理的密度泛函理论, 以量子化学从头计算软件 为平台研究了Sn(O_1-xN_x)₂材料的光电磁性能, 分析了体系的态密度、 能带结构、 磁性、 介电虚部及折射率. 计算结果表明, N替代O后, 随着掺杂浓度的增加, 体系的带隙先减小后增大, 掺杂量为12.50%时带隙最窄. 由于N 2p轨道电子的贡献, 在0.55-1.05 eV范围内产生了浅受主能级, 价带和导带处的能级均出现了劈裂及轨道的重叠现象, Sn-O键的键强大于N-O键的键强. 从磁性来看, N原子决定了磁矩的大小. 从介电虚部可知, 掺杂后体系的光学吸收边增宽, 主跃迁峰发生红移, 反射率和介电谱相对应, 各峰值与电子的跃迁吸收有关.     

Geometric,stable and electronic properties of Aun-2Y2（n=3-8） clusters

Employing first-principles methods,based on the density function theory,and using the LANL2DZ basis sets,the ground-state geometric,the stable and the electronic properties of Aun-2Y2 clusters are investigated in this paper.Meanwhile,the differences in property among pure gold clusters,pure yttrium clusters,gold clusters doped with one yttrium atom,and gold clusters doped with two yttrium atoms are studied.We find that when gold clusters are doped by two yttrium atoms,the odd-even oscillatory behaviours of Aun-1Y and Aun disappear.The properties of Aun-2Y2 clusters are close to those of pure yttrium clusters.     

A nuclear magnetic resonance study of the structural properties and molecular motions of Li2KH(SO4)2 and LiKSO4 single crystals

The structural properties and relaxation mechanisms of Li₂KH(SO₄)₂ crystals were determined using the temperature dependences of NMR spectra and the spin-lattice relaxation times (T₁) of their ¹H, ⁷Li, and ³⁹K nuclei. The results obtained were compared with the previously reported physical properties of LiKSO₄ crystals. The substitution of the potassium ions with protons in the LiKSO₄ crystals were variations in the phase transition temperatures, and the non-appearance of ferroelastic properties. The ⁷Li T₁ for the Li₂KH(SO₄)₂ crystals was much shorter than the ⁷Li T₁ for the LiKSO₄ crystals, and these findings indicate that the presence of the protons in Li₂KH(SO₄)₂ causes the Li ions to move with greater freedom.     

Structures and electronic properties of Mo2nNn（n=1-5）:a density functional study

The lowest-energy structures and the electronic properties of Mo2nNn(n=1-5) clusters have been studied by using the density functional theory(DFT) simulating package DMol 3 in the generalized gradient approximation(GGA).The resulting equilibrium geometries show that the lowest-energy structures are dominated by central cores which correspond to the ground states of Mo n(n = 2,4,6,8,10) clusters and nitrogen atoms which surround these cores.The average binding energy,the adiabatic electron affinity(AEA),the vertical electron affinity(VEA),the adiabatic ionization potential(AIP) and the vertical ionization potential(VIP) of Mo2nNn(n=1-5) clusters have been estimated.The HOMO-LUMO gaps reveal that the clusters have strong chemical activities.An analysis of Mulliken charge distribution shows that charge-transfer moves from Mo atoms to N atoms and increases with cluster size.     

Structure and electronic properties of Hn@C20 molecule

Density functional theory has been employed to optimize the structure of endohedral doped C₂₀ fullerene. We have also investigated electronic properties. We have found that C₂₀ cage can accommodate up to 8 hydrogen atoms. Some hydrogen atoms get chemisorbed on the inner surface of C₂₀ cage and form C-H bond. Structural deformation is found to increase with increase in H-atoms. From the analysis of electronic properties, we observe that due to endohedral doping of hydrogen atoms inside C₂₀, H-atoms acquire net negative charge by accepting electrons and fullerene molecules acquire positive charge by donating electrons to H-atoms. For endohedral complexes where H₃ triangular molecule formation takes place, the nature of net charge transfer changes, i.e. fractional electronic charge is transferred from H-atoms to fullerene. C₂₀ doped with odd number of H-atoms should be more reactive compared to the even number case. Most of the present results are similar to those of endohedral C₆₀.