Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

In this study, the reduced graphene oxide field-effect transistor (rGO FET) with indium tin oxide (ITO) extended gate electrode was demonstrated as a transducer for proton sensing application. In this structure, the proton sensing area of the ITO extended gate electrode is isolated from the active area of the rGO FET. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device with encapsulation by a tetratetracontane (TTC) layer showed good stability in electrolytic solutions. The device showed an ambipolar behavior with shifts in Dirac point as the pH of the electrolyte is varied. The pH sensitivity based on the Dirac point shift as a sensing parameter was about 43–50 mV/pH for a wide range of pH values from 2 to 12. The ITO extended gate rGO FET may be considered a potential transducer for sensing of H⁺ in electrolytes. Its sensing area can be modified further for various ions sensing applications.     

Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics

Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.     

Significantly reduced leakage currents in organic thin film transistors with Mn‐doped Bi2Ti2O7 high‐k gate dielectrics

We report the fabrication of organic thin‐film transistors (OTFTs) with high‐k gate dielectrics of Mn‐doped Bi₂Ti₂O₇ (BTO) films. 3% Mn‐doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10^–8 A/cm² at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10^–4 A/cm². Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene‐based OTFTs with the Mn‐doped BTO gate dielectrics. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of graphene oxide,reduced graphene oxide and their nanocomposites with polyethylene oxide

This work describes the synthesis of GO, rGO and their nanocomposites with PEO. GO and rGO were prepared by the modified Hummers method and in-situ reduction of GO utilizing green reductant L (+) Ascorbic acid. The nanocomposites were characterized by Fourier-transform infrared spectroscopy (FT-IR), X-ray powder diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Thermogravimetric Analysis (TGA), and Universal Testing Machine (UTM). FT-IR and XRD confirmed the synthesis of GO and rGO. FE-SEM confirmed the uniformly exfoliated GO and rGO nanosheets in the polymer matrix. Hydrogen bonding was the main interaction mechanism for GO with PEO while no interaction was detected by FT-IR for rGO. Enhanced thermal stability was observed for both GO/PEO and rGO/PEO nanocomposites. The mechanical analysis showed an increase in Young's modulus, tensile strength, and elongation at break for GO/PEO nanocomposites, which is attributed to the homogeneous dispersion and hydrophilic hydrogen bonding interaction of GO with PEO.     

Ultrathin gate dielectrics for silicon nanodevices

This paper reviews recent progress in structural and electronic characterizations of ultrathin SiO₂thermally grown on Si(100) surfaces and applications of such nanometer-thick gate oxides to advanced MOSFETs and quantum-dot MOS memory devices. Based on an accurate energy band profile determined for the n ⁺ -poly- Si/SiO₂/Si(100) system, the measured tunnel current through ultrathin gate oxides has been quantitatively explained by theory. From the detailed analysis of MOSFET characteristics, the scaling limit of gate oxide thickness is found to be 0.8 nm. Novel MOSFETs with a silicon quantum-dot floating gate embedded in the gate oxide have indicated the multiple-step electron injection to the dot, being interpreted in terms of Coulombic interaction among charged dots.     

The Kondo effect in reduced graphene oxide films

The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal–insulator transition in resistance (at ～30 K) as well as high field magneto‐resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano‐islands and localized magnetic moments found in disordered regions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

稀土元素掺杂的Hf基栅介质材料研究进展

随着金属氧化物半导体场效应管(MOSFETs)等比缩小到45 nm技术节点,具有高介电常数的栅介质材料(高k材料)取代传统的SiO₂已经成为必然,然而Hf基高k材料在实际应用中仍然存在许多不足,而稀土元素掺杂在提高Hf基栅介质材料的k值、降低缺陷密度、调整MOSFETs器件的阈值电压等方面表现出明显的优势.本文综述了Hf基高k材料的发展历程,面临的挑战,稀土掺杂对Hf基高k材料性能的调节以及未来研究的趋势. 关键词： k栅介质')" href="#">Hf基高k栅介质 稀土掺杂 氧空位缺陷 有效功函数     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

Complete coverage of reduced graphene oxide on silicon dioxide substrates

Reduced graphene oxide(RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost(相似文献   

栅氧化层介质经时击穿的逾渗模型

在研究了MOSFET栅氧化层介质经时击穿物理机制的基础上，提出了氧化层击穿的逾渗模型.认为氧化层的击穿是E′心和氧空位等深能级缺陷产生与积累，并最终形成电导逾渗通路的结果.指出在电场作用下，氧化层中产生深能级缺陷，缺陷形成定域态，定域态的体积与外加电场有关.随着应力时间的增长，氧化层中的缺陷浓度增大，定域态之间的距离缩小.当定域态之间的距离缩小到一个阈值时，定域态之间通过相互交叠形成逾渗通路，形成扩展态能级，漏电流开始急剧增大，氧化层击穿. 关键词： 栅氧化层 TDDB 逾渗 模型     

基于金属氧化物薄膜晶体管的高速行集成驱动电路

本文提出了一种基于非晶铟锌氧化物薄膜晶体管的高速行集成驱动电路,该电路采用输入级复用的驱动结构,一级输入级驱动三级输出级,不仅减少电路输入级2/3晶体管的数量,实现AMOLED或AMLCD显示屏的窄边框显示,而且输入级的工作频率是输出级的1/3,该结构适用于高速驱动电路.电路内部产生了三次电容耦合效应,每一次电容耦合效应都可以提高相应节点的电压,保证了信号完整传输.输出级采用了一个二极管接法的薄膜晶体管,该薄膜晶体管连接了输出级的控制信号和上拉薄膜晶体管的栅极,利用的每一级输出级输出时所产生的电容耦合效应,增加上拉薄膜晶体管的栅极电压,有效地提高电路输出能力和工作速度.仿真表明电路能够输出脉宽达到4μs速度.最后成功地制作了10级行集成驱动电路,包括10级输入级电路和30级输出级电路,负载为R=10k?和C=100pF,实验结果验证,该电路满足4k×8k显示屏在120 Hz刷新频率下的驱动需求.     

氧化石墨烯被动调Q掺铒光纤激光器

报道了基于氧化石墨烯的被动调Q掺铒光纤激光器。激光器采用环形腔结构,调Q器件为自制的氧化石墨烯可饱和吸收镜。泵浦功率在81~505 mW范围内时,得到了重复频率68~124 kHz的稳定的调Q脉冲输出,脉宽为0.47~1.60 s。由于泵浦功率限制,激光器最大输出功率为10 mW, 相应单脉冲能量为80.6 nJ。此种基于氧化石墨烯可饱和吸收体的被动调Q光纤激光器体积小、成本低廉、结构简单、稳定性高、光束质量高,具有广阔的应用前景。     

A new analytical device incorporating a nitrogen doped lanthanum metal oxide with reduced graphene oxide sheets for paracetamol sensing

The novel N-CeO₂ nanoparticles decorated on reduced graphene oxide (N-CeO₂@rGO) composite has been synthesized by sonochemical method. The characterization of as prepared nanocomposite was intensely performed by UV–Vis, FT-IR, EDX, FE-SEM, HR-TEM, XRD, and TGA analysis. The synthesized nanomaterial was further investigated for its selective and sensitive sensing of paracetamol (PM) based on a N-CeO₂@rGO modified glassy carbon electrode. A distinct and improved reversible redox peak of PM is obtained at N-CeO₂@rGO nanocomposite compared to the electrodes modified with N-CeO₂ and rGO. It displays a very good performance with a wide linear range of 0.05–0.600 μM, a very low detection limit of 0.0098 μM (S/N = 3), a high sensitivity of 268 μA µM⁻¹ cm⁻² and short response time (<3 s). Also, the fabricated sensor shows a good sensibleness for the detection of PM in various tablet samples.     

氧化石墨烯与淀粉样短肽相互作用的理论研究

利用副本交换分子动力学方法,对比研究了淀粉样短肽Aβ_(16-22)在加入石墨烯以及氧化石墨烯前后的聚集状况.我们发现相比石墨烯,氧化石墨烯能够明显地抑制淀粉样短肽Aβ_(16-22)的聚集.其原因是氧化石墨烯与Aβ_(16-22)片段中氨基酸的疏水相互作用以及氧化石墨烯表面的极性基团与Aβ_(16-22)形成的氢键大大地弱化了Aβ_(16-22)氨基酸链间的相互作用,最终抑制了Aβ_(16-22)的纤维化.我们的研究将为基于碳纳米颗粒治疗淀粉样变性病的药物设计与开发提供新思路.     

Deposition of hybrid structures of reduced graphene oxide and tin dioxide thin films,and persistent photoconductivity observation

Reduced graphene oxide (rGO) is deposited on glass substrate by dripping and sol-gel-coating methods giving rise to nanostructures. When in combination with thin films of SnO₂, they form a heterostructure SnO₂:2 at% Eu/rGO, which alters the surface electrical conductivity. SnO₂ and rGO were also combined as a composite, with conductivity strongly affected by ultraviolet excitation, and shows persistent photoconductivity (PPC) phenomenon even very close to room temperature. Both sort o hybrid structures can be applied in electronic devices. The SnO₂ films are deposited via chemical route by sol-gel or by a mixed technique that combines powders generated by drying the sol-gel solution with resistive evaporation of this powder. Resistivity measured as a function of temperature show that the SnO₂:2 at%Eu sample behaves very similarly to the SnO₂:2 at%Eu/rGO heterostructure sample, with the same energy level for the dominant defect, 172 meV, coincident with ionization of oxygen vacancies. Despite not changing the position of this level, the presence of rGO on the surface of the SnO₂ film induces a decrease in conductivity in vacuum, demonstrating the surface interaction.     

Reliable determination of the few‐layer graphene oxide thickness using Raman spectroscopy

We report on a reference‐free Raman spectroscopy method for a precise thickness determination of the multilayered graphene oxide flakes. The method is based on the normalization of the total integral intensity of D and G Raman bands to the integral intensity of the second‐order optical phonon peak of the silicon substrate in the Raman spectrum. The normalization provides discrete ratio values corresponding to the number of graphene oxide layers in the respective flakes with the intensity linearly increasing with the number of layers. This provides a fast and robust determination of the thickness of graphene oxide flakes in terms of the layer number up to high values. A comparison with conventional spectrally resolved reflectivity mapping shows similar sensitivity, while selectivity to particular functional chemical groups is a bonus of the Raman‐based method. Copyright © 2015 John Wiley & Sons, Ltd.     

电场诱导氧化石墨烯的极化动力学特性研究

本文通过外加电场改变氧化石墨烯团簇分子的共振能量,利用激光激发氧化石墨烯产生的共振荧光特性测量氧化石墨烯在电场作用下的极化动力学特性. 发现存在外加电场使得荧光共振峰的半高全宽趋于饱和的时间特性,而不同的氧化石墨烯团簇分子的荧光共振峰的暂态特性同时反映了电场对氧化石墨烯产生定向极化和变形极化的动力学特性. 关键词： 氧化石墨烯 团簇分子 电场 极化动力学     

Fractional distribution of graphene oxide and its potential as an efficient and reusable solid catalyst for esterification reactions

Graphene oxide (GrO) prepared by the Hummers method was separated into three different fractions (GrO₅₀₀₀, GrO₂₀₀₀, and GrO_res) on the basis of their dispersion stability in the water. Infrared, nuclear magnetic resonance, X‐ray photoelectron spectroscopy, and elemental analyses revealed that GrO₅₀₀₀ possesses a high degree of oxygen functionalities including phenolic, carboxylic, and ?OSO₂H groups, compared with the other fractions. The GrO₅₀₀₀ was found to be a highly efficient and reusable solid catalyst for the esterification of various carboxylic acids with a variety of alcohols to furnish corresponding esters in high to excellent yields. The catalytic activity of the GrO₅₀₀₀ was attributed to the ability of highly polar GrO₅₀₀₀ scaffold to adsorb/attract reactants, where the acid functionalities of GrO₅₀₀₀ facilitated the esterification process efficiently. The chemical and structural features of GrO₅₀₀₀ were discussed to understand the improved catalytic activity compared with GrO₂₀₀₀ and conventional solid acid catalysts. Copyright © 2014 John Wiley & Sons, Ltd.     

Synthesis of NiCo2S4 nanospheres/reduced graphene oxide composite as electrode material for supercapacitor

The NiCo₂S₄ nanospheres arrayed on the surface of reduced graphene oxide (rGO) was fabricated via one-step hydrothermal method. The effect of initial feeding mass of Ni(NO₃)₂·6H₂O and Co(NO₃)₂·6H₂O to rGO on the microstructure and electrochemical performance of the as-prepared composites was studied. The results indicated that the specific capacitances of the composites were first increased and then reduced due to the aggregation of NiCo₂S₄ nanospheres. NiCo₂S₄ nanospheres/rGO composites exhibited a remarkable specific capacitance of 1406 F/g and excellent cyclic stability of 82.36% at the current density of 1 A/g, which were better than those of individual NiCo₂S₄ (792 F/g and 64.77%) counterpart. These results showed that the as-prepared NiCo₂S₄ nanospheres/rGO composites were outstanding candidate for electrode material of supercapacitors.     

动态应力下超薄栅氧化层经时击穿的可靠性评价

实验发现动态电压应力条件下,由于栅氧化层很薄,高电平应力时间内隧穿入氧化层的电子与陷落在氧化层中的空穴复合产生中性电子陷阱,中性电子陷阱辅助电子隧穿.由于每个周期的高电平时间较短(远远低于电荷的复合时间),隧穿到氧化层的电子很少,同时低电平应力时间内一部分电荷退陷,形成的中性电子陷阱更少.随着应力时间的累积,中性电子陷阱达到某个临界值,栅氧化层突然击穿.高电平时形成的陷阱较少和低电平时一部分电荷退陷,使得器件的寿命提高. 关键词： 超薄栅氧化层 斜坡电压 经时击穿