Surface soft phonon and the sqrt[3] x sqrt[3] <--> 3x3 phase transition in Sn/Ge(111) and Sn/Si(111)

Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.     

Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces

Distortions of the sqrt[3]x sqrt[3] Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, Q, related to the surface band occupancy. A novel understanding of the (3 x 3)-1U ("1 up, 2 down") and 2U ("2 up, 1 down") distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distortions. Negative strain attracts pseudocharge from the valence band causing first a (3 x 3)-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a (sqrt[3] x sqrt[3])-3U ("all up") state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.     

Surface phase transitions induced by electron mediated adatom-adatom interaction

We propose that the indirect adatom-adatom interaction mediated by the conduction electrons of a metallic surface is responsible for the sqrt[3]xsqrt[3]<==>3x3 structural phase transitions observed in Sn/Ge (111) and Pb/Ge (111). When the indirect interaction overwhelms the local stress field imposed by the substrate registry, the system suffers a phonon instability, resulting in a structural phase transition in the adlayer. Our theory is capable of explaining all the salient features of the sqrt[3]xsqrt[3]<==>3x3 transitions observed in Sn/Ge (111) and Pb/Ge (111), and is in principle applicable to a wide class of systems whose surfaces are metallic before the transition.     

Adatom-vacancy mechanisms for the C6)/Al111-(6 x 6) reconstruction

The irreversible (6x6) reconstruction of the C(60)/Al(111) system from the (2sqrt[3]x2sqrt[3])R30 degrees phase is studied by first-principles techniques. We find that C60 binds optimally to the surface if an Al vacancy is created directly underneath. The removed Al atoms form a (6x6) array of ad-dimers in the interstices below the C60 overlayer, to which they strongly bind. This spontaneous local process, rather than the compression state of the unreconstructed C60 overlayer, explains why one molecule out of three protrudes from the surface upon reconstruction.     

Low temperature disordered phase of alpha-Pb/Ge(111)

A new structural phase transition has been observed at low temperature for the one-third of a monolayer (alpha phase) of Pb on Ge(111) using a variable-temperature scanning tunneling microscope. The well-known (sqrt[3] x sqrt[3])R30 degrees to (3 x 3) transition is accompanied by a new structural phase transition from (3 x 3) to a disordered phase at approximately 76 K. The formation of this "glasslike" phase is a consequence of competing interactions on different length scales.     

Direct observation of sn adatoms dynamical fluctuations at the Sn/Ge(111) surface

The well-known low-temperature phase transition sqrt[3]xsqrt[3] to 3x3 for the 1/3 monolayer of Sn adatoms on the Ge(111) surface has been studied by scanning tunneling microscopy. The STM tip was used as a probe to record the tunneling current as a function of time on top of the Sn adatoms. The presence of steps on the current-time curves allowed the detection of fluctuating Sn atoms along the direction vertical to the substrate. We discuss the effect of temperature and surface defects on the frequency of the motion, finding consistency with the dynamical fluctuations model.     

Role of long range interaction in oxygen superstructure formation on Cu(001) and Ni(001)

On the basis of electronic structure calculations, we show that the long range Coulomb interaction provides the driving mechanism for oxygen overlayer formation on Cu(001). We illustrate that this interaction in the precursor c(2 x 2) phase induces a missing row reconstruction of Cu(001), and leads to the (2sqrt[2] x sqrt[2])R45 degrees O structure, which has strong covalent pO-dCu coupling. For the c(2 x 2)O overlayer on Ni(001) and Cu(001), we show that pO-dNi bonding is larger than pO-dCu and serves to neutralize the perturbation of the Coulomb interaction induced by the O overlayer. Consequently, c(2 x 2)O/Ni(001)) is stable while c(2 x 2)O/Cu(001) exists only in limited environments.     

Jahn-Teller stabilization of a "polar" metal oxide surface: Fe3O4(001)

Using ab initio thermodynamics we compile a phase diagram for the surface of Fe3O4(001) as a function of temperature and oxygen pressures. A hitherto ignored polar termination with octahedral iron and oxygen forming a wavelike structure along the [110] direction is identified as the lowest energy configuration over a broad range of oxygen gas-phase conditions. This novel geometry is confirmed via x-ray diffraction analysis. The stabilization of the Fe3O4(001) surface goes together with dramatic changes in the electronic and magnetic properties, e.g., a half metal to metal transition.     

Direct observation of a (3 x 3) phase in alpha-Pb/Ge(111) at 10 K

We have investigated the recently reported structural phase transition at low temperature (LT) for alpha-Pb/Ge(111) [from a (3 x 3) symmetry to a disordered phase] using scanning tunneling microscopy (STM). By tracking exactly the same surface regions with atomic resolution while varying the sample temperature from 40 to 140 K, we have observed that substitutional point defects are not mobile, in clear contrast to previous assumptions. Moreover, STM data measured at the lowest temperatures ever reported for this system (10 K) show that while filled-state images display the apparent signature of a glassy phase with no long-range order, in empty-state images honeycomb patterns with (3 x 3) periodicity, and not distinguishable from data measured at much higher temperatures, are clearly resolved. These new observations cast serious doubts on the nature and/or on the existence of a disordered phase at LT.     

Scanning tunneling microscopy and surface simulation of zinc-blende GaN(001) intrinsic 4x reconstruction: linear gallium tetramers?

Scanning tunneling microscopy images confirm electron diffraction studies that the zinc-blende GaN(001)-4x reconstruction consists of rows aligned along [110] with a spacing along [110] of 4a. Dual-bias imaging shows a 180 degree shift of the corrugation maximum position between the profiles of empty and occupied states, in agreement with surface simulations based on the 4 x 1 linear tetramer model of Neugebauer et al. [Phys. Rev. Lett. 80, 3097 (1998)]. Electronic structure calculations predict a surface band gap of 1.1 eV, close to the measured value of 1.14 eV and the previously predicted value (1.2 eV). Despite the successes of this model, high-resolution images reveal an unexpected 3x periodicity (not seen in diffraction) along the [110] row direction, indicating the need for a 4 x 3 model, and putting into question the existence of linear Ga tetramers.     

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111)

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.     

Revisiting the structure of the p(4 x 4) surface oxide on Ag(111)

Scanning tunneling microscopy (STM) and density-functional theory are used to reexamine the structure of the renowned p(4 x 4)-O/Ag(111) surface oxide. The accepted structural model [C. I. Carlisle, Phys. Rev. Lett. 84, 3899 (2000)10.1103/PhysRevLett.84.3899] is incompatible with the enhanced resolution of the current STM measurements. An "Ag6 model" is proposed that is more stable than its predecessor and accounts for the coexistence of the p(4 x 4) and a novel c(3 x 5log3)rect phase. This coexistence is an indication of the dynamic complexity of the system that until now has not been appreciated.     

Imaging phase separation near the Mott boundary of the correlated organic superconductors kappa-(BEDT-TTF)2X

Electronic phase separation consisting of the metallic and insulating domains with 50-100 microm in diameter is found in the organic Mott system kappa-[(h8-BEDT-TTF)(1-x)(d8-BEDT-TTF)x]2Cu[N(CN)2]Br by means of scanning microregion infrared spectroscopy using the synchrotron radiation. The phase separation appears below the critical end temperature 35-40 K of the first-order Mott transition. The observation of the macroscopic size of the domains indicates a different class of the intrinsic electronic inhomogeneity from the nanoscale one reported in the inorganic Mott systems such as high-Tc copper and manganese oxides.     

Phonon softening,chaotic motion,and order-disorder transition in Sn/Ge(111)

The phonon dynamics of the Sn/Ge(111) interface is studied using high-resolution helium atom scattering and first-principles calculations. At room temperature we observe a phonon softening at the Kmacr; point in the (sqrt[3]xsqrt[3])R30 degrees phase, associated with the stabilization of a (3x3) phase at low temperature. That phonon band is split into three branches in the (3x3) phase. We analyze the character of these phonons and find out that the low- and room-temperature modes are connected via a chaotic motion of the Sn atoms. The system is shown to present an order-disorder transition.     

Metallic nature of the alpha-Sn/Ge(111) surface down to 2.5 K

Low temperature (down to 2.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are presented to assess the nature of the alpha-Sn/Ge(111) surface. Bias-dependent STM and STS measurements have been used to demonstrate that such a surface preserves a metallic 3 x 3 reconstruction at very low temperature. A tip-surface interaction mechanism becomes active below about 20 K at the alpha-Sn/Ge(111) surface, resulting in an apparent unbuckled (sqrt[3] x sqrt[3]) reconstruction when filled states STM images are acquired with tunneling currents higher than 0.2 nA.     

Reflection anisotropy spectroscopy: A new probe for the solid-liquid interface

Introducing reflection anisotropy spectroscopy (RAS) as a new probe for solid-liquid interfaces, we present results for the Au(110)/electrolyte interface which serves as a model system. We demonstrate that RAS is sensitive to surface phase transitions, step morphology, and electronic surface states. Using an empirical approach, the RA spectra are reproduced and features are identified which reflect the known character of the bias voltage driven (2x1) to (1x1) phase transition. RAS is established as an experimental technique to probe the electronic structure of solid-liquid interfaces in real time to study a wide range of interface properties.     

气相传输平衡法在(11-20)面蓝宝石上制备γ铝酸锂膜

为了寻找可能替代蓝宝石作为氮化镓外延的新型衬底,通过48 h的气相传输平衡,分别在1000℃、1030℃、1050℃、1070℃和1100℃制备了一层单相多晶的γ铝酸锂膜。X射线衍射和扫描电镜分别用于表征膜的物相、取向和表面形貌。结果显示,γ铝酸锂择优取向的好坏取决于气相平衡传输温度,在1050℃制备的γ铝酸锂具有高度的[100]择优取向;在γ铝酸锂(001)面上的双轴拉应力可能有助于[100]择优取向的形成;γ铝酸锂晶粒表面裂纹的方向一致性与其择优取向紧密相关。上述结果表明在合适的工艺条件下,气相传输平衡法制备的γ铝酸锂/蓝宝石可能成为一种很有前景且适合(1-100)面氮化镓生长的复合衬底。     

Soft phonon, dynamical fluctuations, and a reversible phase transition: indium chains on silicon

The In/Si(111)-(4 x 1) surface is a paradigmatic example of a quasi-one-dimensional system showing a reversible structural and electronic (metal-insulator) phase transition when the temperature is lowered. In this work, we use first-principles simulation techniques to uncover the atomic and electronic origin of this controversial transition. Our calculations show that the ground state consists of insulating (4 x 2) indium chains with a weak interchain coupling that induces opposite shear distortions in alternate chains. First-principles molecular dynamics simulations show that the (4 x 1) <--> (8 x 2) phase transition is due to the "dynamical fluctuations" the system undergoes when, at high temperature, it fluctuates chaotically between degenerate ground states. The metallicity of the In/Si(111)-(4 x 1) surface is related to the low energy cost for the shear distortion.     

小角x射线散射法研究甲基改性氧化硅凝胶的双分形结构

以正硅酸乙酯［Si(OC2H5)4,TEOS］和甲基三乙氧基硅烷［CH3Si(OC2H5)3,MTES］为前驱体，通过共水解法和两步法制备出两种不同的甲基改性氧化硅凝胶，在北京同步辐射光源(BSRF)小角x射线散射(SAXS)站测量了凝胶的散射强度，计算了凝胶的平均粒径、两相间比表面积等参数，在此基础上分析了凝胶的分形特征，发现存在两个尺度上的分形结构，分别对应于从SiO2原生颗粒到一次团聚体和从一次团聚体到簇团两种尺度.辅以透射电子显微镜(TEM)观测，证实由两种方法获得的凝胶具有非常不同的微观结构.实验证明，利用SAXS技术研究甲基改性凝胶的分形特征是获得凝胶微观结构的有力工具. 关键词： 甲基改性凝胶 氧化硅 小角x射线散射(SAXS) 分形结构     

Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer

Temperature-dependent electron transport in a metallic surface superstructure, Si(111)sqrt[3] x sqrt[3]-Ag, was studied by a micro-four-point probe method and photoemission spectroscopy. The surface-state conductivity exhibits a sharp transition from metallic conduction to strong localization at approximately 150 K. The metallic regime is due to electron-phonon interaction while the localization seemingly originates from coherency of electron waves. Random potential variations, caused by Friedel oscillations of surface electrons around defects, likely induce strong carrier localization.