Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice

Standing-wave-excited photoemission is used to study a SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and valence band spectra are used to derive layer-resolved spectral functions, revealing a suppression of electronic states near the Fermi level in the multilayer as compared to bulk LaNiO3. Further analysis shows that the suppression of these states is not homogeneously distributed over the LaNiO3 layers but is more pronounced near the interfaces. Possible origins of this effect and its relationship to a previously observed metal-insulator-transition in ultrathin LaNiO3 films are discussed.     

Layer Crystallization in PZT/LNO/Si Heterostructures

Physics of the Solid State - A Pb(Zr0.52Ti0.48)O3–LaNiO3–Si composition and LaNiO3 thin films are synthesized using chemical solution deposition and studied by transmission electron...     

The surface hydro-oxidation of LaNiO(3-delta) thin films

The chemical structure and possible hydro-oxidation of LaNiO(3-delta) films were studied by means of tuneable high-energy X-ray photoelectron spectroscopy using synchrotron radiation. It was shown that the hydroxyl-containing phase, located near the film surface, may be attributed to the lanthanum and nickel hydroxide species. The thickness of a hydroxide-enriched layer was estimated from the oxide/hydroxide ratio measured at normal and grazing conditions. The hydroxide layer thickness was about 2 nm for step and/or exponential hydroxide spatial distribution.     

不同生长条件下BiFeO_3薄膜的显微拉曼光谱研究

使用显微拉曼散射技术观察了用脉冲激光沉积方法(PLD)在不同的生长条件下制备的BiFeO3薄膜的拉曼光谱,并且研究了薄膜的结构以及不同的生长条件对薄膜的结构和微结构的影响。与BiFeO3粉末的拉曼光谱比较,我们发现在N2气氛中,在LaNiO3缓冲层上沉积的BiFeO3薄膜具有单一的三方相和最完整的晶格结构。     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

间隔层对双发光层白色有机电致发光器件性能的影响

采用蓝色bis (FIrpic)和黄色bis iridium(acetylacetonate) 两种磷光染料,制备了双发光层结构的白色有机电致发光器件,器件结构为ITO/TAPC (30 nm)/host: (t-bt)₂Ir(acac) /spacer (x nm)/host: FIrpic (15 nm, 8%)/Bphen (40 nm)/Mg∶Ag (200 nm)。分别选用p型1,1-bis cyclohexane (TAPC)和n型tris borane (3TPYMB)作为主体材料制备了两种类型的器件,通过在两个发光层之间加入一层较薄的间隔层进行器件优化。结果表明,加入间隔层之后,器件性能得到提高,获得了色稳定性较好的白光器件。当主体为TAPC时,使用间隔层后器件取得最大亮度为19 550 cd/m²,最大电流效率为8.3 cd/A;当主体为3TPYMB时,使用间隔层后器件的最大亮度为1 950 cd/m²,最大电流效率为30.7 cd/A。实验结果表明,器件性能的提高,是由于加入了间隔层之后载流子复合区域拓宽,促进了发光层中电子和空穴的平衡。     

激基复合物给体作间隔层对激子复合区域的调节

为研究激基复合物器件激子复合区域的变化,在TPD/BPhen界面可形成激基复合物发光的基础上,以Ir(pq)2(acac)为探测层,制备器件ITO/Mo O_3(2.5 nm)/TPD((40-x)nm)/Ir(pq)2(acac)(0.5 nm)/TPD(x,x=0,3,6,10 nm)/BPhen(40 nm)/Cs2CO_3/Al,其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明,该组器件的激子复合区域主要位于Ir(pq)2(acac)薄层和TPD/BPhen界面,分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高,发光区域向激基复合物区域(TPD/BPhen界面)移动,即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光,Ir(pq)2(acac)发光减弱。当间隔层厚度由0 nm增至10nm时,6 V电压下的Ir(pq)2(acac)和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件,Ir(pq)2(acac)和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见,激基复合物给体作间隔层能有效调节激子复合区域。     

LaNiO3-δ 薄膜中的氧缺位及其对金属输运行为的影响

钙钛矿结构 LaNiO3 因其高电导的金属性输运行为, 有望作为电极材料在今后的氧化物器件工艺中发挥重要作用. 为了细致认识氧缺位对其金属输运的影响, 本文采用溶胶凝胶法在氧气、 空气和真空等气氛下烧结获得具有不同缺氧量的 LaNiO3 -δ 薄膜, 并利用 Mn3 + 的还原性进一步调整其缺氧量δ . 对这些样品的电阻率温度关系测量结果表明, 缺氧量δ > 0. 1 后薄膜的高温电阻率开始超过 Mott-Ioffe-Regel 极限, 变成“坏金属”; 增大δ 至0.2, 薄膜的低温剩余电阻率大幅度上升, 说明氧空位分布无序性导致的载流子局域化有明显作用. 以上样品的金属输运都呈非费米液体行为. 继续增加氧缺位浓度, 样品电阻率在低温a30 K 以下呈绝缘体温度关系, 同时高温金属态转变为费米液体行为, 说明钙钛矿结构镍酸盐的金属-绝缘体转变与费米液体输运之间或存在关联性.     

Magnetic and magnetoresistive properties of epitaxial Co/Cu/Co trilayers on Si(111)

Giant magnetoresistance of the epitaxial Co/Cu/Co trilayers grown on vicinal Si(111) was determined as a function of Cu spacer coverage in the range from 0 to 7 ML. The first maximum of giant magnetoresistance and antiferromagnetic coupling was detected at 3.0 ML coverage of the Cu spacer. The portion of antiferromagnetic coupling in the first antiferromagnetic maximum was estimated as 17%. 3D growth mode of the Cu spacer leads to the simultaneous occurrence of the ferromagnetically and antiferromagnetically coupled areas between the Co layers.     

Asymmetric orbital-lattice interactions in ultrathin correlated oxide films

Using resonant x-ray spectroscopies combined with density functional calculations, we find an asymmetric biaxial strain-induced d-orbital response in ultrathin films of the correlated metal LaNiO3 which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.     

间隔层对红绿磷光有机电致发光器件发光性能的影响

制备了结构为ITO/MoO₃(40 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶GIr1(14%)∶R-4B(2%)(20 nm) /间隔层(3 nm)/ CBP∶GIr1(14%)∶R-4B(2%)(10 nm)/BCP(10 nm)/Alq₃(40 nm)/LiF(1 nm)/Al(100 nm) 的有机电致发光器件,间隔层分别为CBP,TCTA,TPBI和BCP,GIr1和R-4B分别为绿红磷光材料。通过加入不同间隔层来调控载流子和激子在发光层内的分布并研究了其对器件发光性能的影响。研究表明TCTA,TPBI和BCP分别作为间隔层的器件较CBP为间隔层的参考器件,电压为6 V时,电流效率分别高出59%,79%和93%,以BCP为间隔层的器件效率最高达到22.58 cd·A-1;TPBI和BCP为间隔层相对于以TCTA为间隔层的器件,在较高的电流密度下,效率滚降更小。分析原因TCTA间隔层较高的LUMO能级和三线态能量将电子和激子限制在较窄的复合区域,提高了载流子相遇形成激子的概率,在较高电流密度下猝灭也更严重;TPBI和BCP由于具有较高的HOMO能级和电子传输能力,拓宽了激子的复合区域。间隔层引起电子或空穴的累积,形成较高的空间电场,有利于发光层相应载流子的注入与传输。由于发光层掺杂方式为红绿共掺,器件均获得了较好的色坐标稳定性。     

Dynamical mean-field theory of nickelate superlattices

Dynamical mean-field methods are used to calculate the phase diagram, many-body density of states, relative orbital occupancy, and Fermi-surface shape for a realistic model of LaNiO(3)-based superlattices. The model is derived from density-functional band calculations and includes oxygen orbitals. The combination of the on-site Hunds interaction and charge transfer between the transition metal and the oxygen orbitals is found to reduce the orbital polarization far below the levels predicted either by band-structure calculations or by many-body analyses of Hubbard-type models which do not explicitly include the oxygen orbitals. The findings indicate that heterostructuring is unlikely to produce one band-model physics and demonstrate the fundamental inadequacy of modeling the physics of late transition-metal oxides with Hubbard-like models.     

Dependence of the interband transition and the activation energy on the ZnTe spacer thickness in CdTe/ZnTe double quantum dots

Photoluminescence (PL) measurements were carried out to investigate the interband transition and the activation energy in CdTe/ZnTe double quantum dots (QDs). While the excitonic peaks corresponding to the interband transition from the ground electronic subband to the ground heavy-hole (E₁-HH₁) in the CdTe/ZnTe double QDs shifted to higher energy with decreasing ZnTe spacer thickness from 30 to 10 nm due to transformation from CdTe QDs to Cd_xZn_1−xTe QDs, the peaks of the (E₁-HH₁) transitions shifted to lower energy with decreasing spacer thickness from 10 to 3 nm due to the tunneling effects of the electrons between CdTe double QDs. The decrease in the activation energy with decreasing ZnTe spacer thickness might originate from an increase in the number of defects in the ZnTe spacer. The present results can help improve the understanding of the interband transition and the activation energy in CdTe/ZnTe double QDs.     

测量非辐射能从荧光分子到介电界面的传输

我们测量了被Al2O3隔离层与Ag,In2O3和SnO2表面分隔开的噻吩甲酰三氟丙酮铕〔europium(Ⅲ)thenoytrifluoroacetonate,EuTTA〕分子的荧光强度。实验结果显示当隔离层厚度为1～10nm时,由于非辐射能从发射中心Eu3+离子传输入介电界面,荧光强度随隔离层厚度减少按指数式减弱。这与能通量模型理论结果相符合.     

Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots

We report the effect of the GaAs spacer layer thickness on the photoluminescence(PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots(QDs).A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer.We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses.The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.     

The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes （RTDs） on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance （NDR） region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.     

Optical and magnetic characterisation of Co3+ and Ni3+ in LaAlO3: interplay between the spin state and Jahn-Teller effect

The coordination, the electronic structures and the spin of the ground state of Ni(3+) (3d(7)) and Co(3+) (3d(6)) introduced as impurities in LaAlO(3) are investigated through optical spectroscopy and magnetic measurements. The unusual trivalent valence state in both transition-metal ions was stabilised via a sol-gel process followed by high oxygen pressure treatments. We show that the crystal-field strength at the nearly O(h) transition-metal site in LaAlO(3) locates Ni(3+) and Co(3+) near the spin state crossover, yielding a low-spin ground state in both cases. We analyse how the interplay between the Jahn-Teller (JT) effect and the spin state affects the magnetic moment of the ion and its temperature dependence. The optical spectra reveal a JT effect associated with a low-spin ground state in Ni(3+) and with a thermally populated high-spin low-lying first excited state in Co(3+). The corresponding JT distortions are derived from structural correlations. We conclude that the JT effect is unable to stabilise the intermediate spin state in Co(3+). A low-spin ground state in thermal equilibrium with a high-spin low-lying first excited state is detected in diluted Co(3+)-doped LaAlO(3). These results are compared with those obtained in the parent pure compounds LaNiO(3) and LaCoO(3).     

Control of unpolarized emission in closely stacked InAs quantum dot structure

In this work, we studied the effect of some growth parameters on the polarization behavior of InAs/GaAs closely stacked quantum dot (CSQDs). In particular, we focused on the surface reconstruction time of GaAs spacer, its thickness and the number of QD layers. We found that the most effective parameter to enhance the TM/TE intensity ratio is the surface reconstruction time of the GaAs spacer before the subsequent QD deposition. By varying this parameter between 20 s and 120 s, a TM/TE ratio as high as 0.86 has been achieved. A further fine tuning of GaAs spacer thickness and QD layer number increased this ratio up to a value of 0.92 in structures containing only 3 QD layers.