溶液浓度对SiC量子点光学性能的影响及表面修饰

采用可控化学腐蚀法制备SiC量子点,在原有腐蚀剂(氢氟酸和硝酸)的基础上添加适量的分析纯硫酸,一步法完成SiC量子点的表面修饰.采用光度计和Lince软件测量并计算了平均粒径5 nm的SiC量子点在不同溶液浓度下的光致发光谱和平均间距;采用傅里叶变换红外光谱仪对SiC量子点表面的功能团进行检测,对其表面亲水性基团耦合的机理进行分析.结果表明,随着SiC量子点溶液浓度的增大(4～12 μmol·L-1),其光致发光强度先增大后减小,且光致发光强度峰值出现在8 μmol·L-1时;SiC量子点表面形成亲水性基团的关键在于腐蚀法制备过程中超声空化环节所营造的局部高压高温环境.     

水溶性量子点ZnS:Mn的光学非线性特性研究

以Nd:YAG锁模激光器二倍频532 nm激光为泵浦光,用Z-扫描技术详细研究了水溶性量子点ZnS:Mn的光学非线性特性.实验结果表明,ZnS:Mn量子点对532 nm的光存在明显的双光子吸收.重点研究了在双光子吸收区ZnS:Mn量子点的非线性吸收和非线性折射,求解了不同入射光强下ZnS:Mn量子点的双光子吸收系数、双光子吸收截面、非线性折射率以及三阶非线性极化率,计算得到双光子吸收截面的最大值达10650×1050 cm4·s·photon-1,平均非线性折射率为8.22×10-20 m2·W-1.分析表明,ZnS:Mn量子点具有长波长的荧光发射、优良的光化学稳定性以及较小的双光子吸收截面,这些特性使其有可能成为双光子荧光分子探针.     

PbSe量子点的制备与近红外波段光学性质研究

通过化学溶液体系中反应温度与原料配比的控制获得了尺寸分布均匀的窄带隙半导体PbSe量子点。利用吸收光谱、X射线衍射（XRD）、透射电子显微镜（TEM）和高分辨透射电子显微镜（HRTEM）等手段研究了化学溶液法制备的PbSe量子点形貌、尺寸分布及红外吸收等特性。结果表明,所获得的量子点尺寸分布均匀,结晶性良好,并实现了第一吸收峰在885 nm～2 200 nm范围内可调的PbSe量子点。     

Surface Modification Strategy Synthesized CsPbX3 Perovskite Quantum Dots with Excellent Stability and Optical Properties in Water

The poor stability of CsPbX₃ (X = Cl, Br, I) perovskite quantum dots (PQDs) in polar solvents such as water, seriously hinders their practical application. Herein, 5-Bromovaleric acid (BVA) is used to replace oleic acid (OA), the most common surface ligand in CsPbX₃ PQDs synthesis. Under the synergic action of oleylamine (OLA), CsPbX₃ PQDs with high water stability can be synthesized directly in water. Because the carboxyl ligands provided by BVA, and the long chain amines provided by OLA formed hydrophobic shells on the surface of CsPbBr₃ PQDs, the obtained CsPbBr₃ PQDs still has high luminescence intensity and photoluminescence quantum yield after being dispersed in water for several days, and the luminescence peak is always maintained at 518 nm. In contrast, the luminescence intensity of CsPbBr₃ PQDs synthesized with OA and OLA is <1% of the initial intensity after only 30 min. CsPbCl₃ and CsPbI₃ PQDs synthesized directly in water by this method also show high water stability. In this study, for the first time the synthesis method of CsPbX₃ PQDs with high water stability using BVA/OLA as surface ligands is proposed, which provides an effective way to explore the synthesis of PQDs that can maintain stability in water.     

Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

Hydrogenated silicon-rich nitride films were deposited by plasma-enhanced chemical vapor deposition using NH₃ and SiH₄. As-deposited samples were thermally annealed under different conditions in argon ambient. Fourier-transform infrared spectroscopy was carried out to investigate the bonding configurations, and Raman scattering spectroscopy was used to study the microstructures and confirm the presence of Si quantum dots (QDs). We found that a near-stoichiometric silicon nitride matrix was formed after high-temperature processing. When the annealing temperature reached 1100°C, the degree of crystallinity (X _c) increased to 51.6% for the 60-min sample compared with 46.1% for the 30-min sample. Red-light and yellow-light emission were obtained from the samples annealed at 1100°C for 30 min and 60 min, respectively. The emission mechanism is dominated by excitons confined within the Si QDs. The ultra-nanocrystals play an important role in the luminescence blue-shift. We measured the bandgap values from optical absorption studies. The increase of the optical bandgap from 1.80 eV to 1.90 eV with increase of the annealing temperature from 950°C to 1100°C is ascribed to the silicon clusters and nitride matrix.     

硅量子点的表面改性技术

硅量子点具有新颖的光电性能,有望在光电、光伏和生物标记等领域发挥重要作用.为了使硅量子点表现出优异而稳定的光电性能,能够有效地被应用,通常需要对硅量子点的表面进行改性.针对表面起初被氢或氯钝化的硅量子点,详细地介绍了最近国内外在硅量子点表面改性方面的研究进展,重点介绍了表面改性技术对硅量子点的分散和发光等性能的影响,分析讨论了最具代表性的表面改性技术——氢化硅烷化的机理以及其对硅量子点性能的影响,提出了今后发展硅量子点表面改性技术的方向和应该注意的问题.     

Nonlinear Optical Properties of CdS/ZnS Quantum Dots in a High-Molecular-Weight Polyvinylpyrrolidone Matrix

Sols containing core/shell CdS/ZnS semiconductor quantum dots are synthesized and their nonlinear properties, which are interesting for a large variety of applications in nanophotonics, are studied. The quantum dots produced are smaller in dimensions than the exciton Bohr radius and, therefore, exhibit a well-pronounced quantum-confinement effect. The nonlinear optical properties of low-concentration sols are studied upon exposure to laser pulses with an emission wavelength of 532 nm and a duration of 5 ns by the z-scan technique. The dependences of nonlinear optical coefficients on the concentration of CdS/ZnS quantum dots are obtained. The intensity dependence of two-photon absorption coefficients is presented. The dependence determines the boundary of the influence of high-order nonlinearities on the nonlinear transmittance of the samples. The mechanisms of optical limitation exhibited by sols, specifically, two-photon absorption, nonlinear refraction, and nonlinear scattering are discussed.     

Structural,Optical, and Electrical Properties of Cobalt-Doped CdS Quantum Dots

In the present work, a systematic study has been carried out to understand the influence of cobalt (Co) doping on various properties of CdS nanoparticles. CdS and Co-doped CdS quantum dots have been prepared at room temperature using a chemical precipitation method without using catalysts, capping agents, or surfactants. X-ray diffraction reveals that both undoped and Co-doped CdS nanoparticles exhibit hexagonal structure without any impurity phase, and the lattice constants of CdS nanoparticles are observed to decrease slightly with increasing cobalt concentration. High-resolution transmission electron microscopy (HRTEM) shows that the particle size of CdS and 5.02% Co-doped CdS nanoparticles is in the range of 2 nm to 4 nm. The Raman spectra of Co-doped CdS nanoparticles exhibit a red-shift compared with that of bulk CdS, which may be attributed to optical phonon confinement. The optical absorption spectra of Co-doped CdS nanoparticles also exhibit a red-shift with respect to that of CdS nanoparticles. The electrical conductivity of CdS and Co-doped CdS nanoparticles is found to increase with increasing temperature and cobalt concentration.     

玻璃中CdSeS量子点的结构和光学性质

用两步退火法在掺CdSeS的玻璃中制备了高密度的量子点,均匀性较好.量子点尺寸随第二步退火时间加长而增大,但组份基本不变.研究了量子点光学性质与退火时间的依赖关系,证明光致发光谱中的低能峰与量子点表面缺陷态有关.量子点尺寸越小,比表面积越大,该峰相对强度越大.     

InP胶体量子点的合成及光谱性质

以三辛基氧化膦(TOPO)作为溶剂,利用无水InCl3和P(Si(CH3)3)3之间的脱卤硅烷基反应合成了InP胶体量子点.其中,TOPO既作为反应溶剂又作为量子点的包覆剂和稳定剂,在反应后期加入十二胺作为表面活性剂.利用粉末X射线衍射仪及透射电子显微镜测量了量子点的结晶性、晶格结构、晶粒尺寸、表面形貌以及晶粒尺寸分布,利用光致发光(PL)光谱仪和紫外可见分光光度计分析了其光学性质.测试结果显示,量子点具有较好的结晶性及一定的尺寸分布,平均直径为2.5nm,标准偏差为7.4%,表现出明显的量子限制效应.     

InP胶体量子点的合成及光谱性质

以三辛基氧化膦(TOPO)作为溶剂,利用无水InCl3和P(Si(CH3)3)3之间的脱卤硅烷基反应合成了InP胶体量子点.其中,TOPO既作为反应溶剂又作为量子点的包覆剂和稳定剂,在反应后期加入十二胺作为表面活性剂.利用粉末X射线衍射仪及透射电子显微镜测量了量子点的结晶性、晶格结构、晶粒尺寸、表面形貌以及晶粒尺寸分布,利用光致发光(PL)光谱仪和紫外可见分光光度计分析了其光学性质.测试结果显示,量子点具有较好的结晶性及一定的尺寸分布,平均直径为2.5nm,标准偏差为7.4%,表现出明显的量子限制效应.     

光学泵作用下两个耦合量子点的输运性质

运用Keldysh格林函数,理论研究了在光学泵作用下的两个耦合量子点的电子输运性质.发现了电流-电压曲线上的平台结构以及透射系数的共振峰,可以由量子点的局域态密度来解释.讨论了光学泵的频率以及强度对系统输运性质的影响,发现当光学泵的频率等于空穴的分立能级时,发生电子的动力学局域化.这个结果可以用来实现光学控制开关.     

Transport Properties of Two Coupled Quantum Dots Under Optical Pumping

运用Keldysh格林函数,理论研究了在光学泵作用下的两个耦合量子点的电子输运性质.发现了电流-电压曲线上的平台结构以及透射系数的共振峰,可以由量子点的局域态密度来解释.讨论了光学泵的频率以及强度对系统输运性质的影响,发现当光学泵的频率等于空穴的分立能级时,发生电子的动力学局域化.这个结果可以用来实现光学控制开关.     

一种表面修饰的CdS量子点的合成与特征分析

用无机成核/有机包裹方法成功合成了3～4nm的CdS量子点;用巯基丙三醇(1t鄄hiogly鄄cerol)对CdS量子点进行了表面修饰;对CdS量子点进行了在水溶液中的分散性实验,同时用透     

ZnS:Er量子点材料制备及其受激发光特性研究

在水性介质中,制备了ZnS：Er量子点,并对其的X射线（XRF）谱、X射线衍射（XRD）谱、透射电子显微镜（TEM）图像和光致发光（PL）谱进行了研究,确定了所制备的ZnS：Er量子点材料中Er的浓度,观测到ZnS：Er量子点呈粒径为4nm的近球型结构。利用LD激发,在LD不同电流强度下得到ZnS：Er量子点从波长1500nm到1650nm的宽谱发射,并随着电流强度的增加ZnS：Er量子点的发射强度明显增加,当电流强度达到1．5A时,1545nm波长处的发射峰更明显。     

Synthesis and Optical Properties of KYF4/Yb,Er Nanocrystals,and their Surface Modification with Undoped KYF4

KYF₄/Yb³⁺, Er³⁺ nanocrystals with a mean diameter of approximately 13 nm were synthesized at 200 °C in the high boiling organic solvent N‐(2‐hydroxyethyl)ethylenediamine (HEEDA). The particles crystallize in the cubic phase known from α‐NaYF₄ and form transparent colloidal solutions in tetraethylene glycol (TEG) or propanol. Solutions containing 1 wt % of the nanocrystals in TEG display visible upconversion emission upon continuous wave (CW) excitation at 978 nm. Growing undoped KYF₄ on the surface of the KYF₄/Yb³⁺, Er³⁺ nanocrystals increases the upconversion efficiency by more than a factor of 20. The XRD data of these particles, display a slight increase in the mean particle size from 13 to 15.5 nm, indicating that only a part of the subsequently added KYF₄ shell material is deposited onto the particle surface. Nevertheless the performed surface modification obviously leads to core/shell structured particles.     

反应条件对水溶性CdSe量子点光学性能的影响

以巯基乙酸(TGA)为配位剂合成了水溶性CdSe量子点,研究了反应时间、溶液pH值及前驱体溶液中镉元素与硒元素的摩尔比对量子点光学性能的影响。以L-半胱氨酸(L-cys)、巯基乙酸和巯基乙胺(CA)为配位剂在优化的pH值条件下合成了系列水溶性量子点,研究了配位剂的种类对量子点光学性能的影响。结果表明:当以TGA为配位剂时,反应条件对量子点的粒径分布及光学性能有重要的影响;为获得粒径分布窄的量子点溶液,宜采用的最佳反应条件为pH值为10～12,Se与Cd的摩尔配比为2∶3,量子点的粒径随时间延长而增大;此外,利用不同的配位剂可有效改变水溶性量子点的表面物理化学特性,且量子点的尺寸大小因所用配位剂不同依以下顺序递减:巯基乙酸L-半胱氨酸巯基乙胺。     

InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质

在InP(001)衬底上使用分子束外延技术自组织生长了多周期InAs/InAlGaAs量子点阵列结构.根据对透射电镜和光致发光谱结果的分析,认为引入与InP衬底晶格匹配的InAlGaAs缓冲层可以获得较大的InAs量子点结构,而InAlGaAs层的表面特性对InAs量子点的结构及光学性质有很大影响.对InP基InAlGaAs缓冲层上自组织量子点的形核和演化机制进行了探讨,提出量子点的演化过程表现为量子点的合并长大并伴随着自身的徙动,以获得能量最优的分布状态.