7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素分子的光谱和激发态的密度泛函理论研究

采用密度泛函理论(DFT)对7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素分子做理论研究。用B3LYP/6-31G(d,p)对其几何结构进行优化,得到其最稳定构型及能量。在优化结构的基础上,对其进行频率分析得到了分子的红外光谱和拉曼光谱,并对谱线中的各峰值做了具体指认,同时也得到了分子的最高占据轨道(HOMO)和最低空轨道(LUMO)能隙为2.150eV。利用含时密度泛函理论(TDDFT)对该分子的激发态进行计算,得到最低十个跃迁允许的单激发态。对前线分子轨道最高占据轨道和最低空轨道分析得到,C-C原子之间形成了离域π键。研究结果表明:7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素是一种良好的有机半导体材料,并具有很好的发光性能。     

并五噻吩分子光谱和激发态的密度泛函理论

首次采用密度泛函理论(DFT)中的B3LYP方法,在6-31G(d)水平上对并五噻吩进行了构型优化,并作振动分析,未出现虚频。频率分析得到分子红外光谱和拉曼光谱,同时也得到分子的HOMO-LUMO能隙为3.86eV,所得计算结果与实验值基本符合。利用含时密度泛函理论(TDDFT)计算其激发态,得到振荡强度最大的五个允许跃迁的单激发态,所有激发态光谱均在紫外波段,故在可见光区域分子相对稳定,不易光致分解。对前线分子轨道HOMO和LUMO分析得到,HOMO到LUMO的跃迁是电子从C原子转移到S原子上,C—C原子之间形成离域键,这正是并五噻吩区别于一般有机材料而具有导电性的根本原因。结果表明:相对于并五苯,并五噻吩具有更高的稳定性,同时具有很好的导电性能和发光性能,是新一类有机半导体材料。     

苯乙烯化苯酚的密度泛函研究

以苯乙烯化苯酚(SP-2)为研究对象,采用密度泛函理论的M06-2X/6-311g(d,p)方法,进行了分子结构优化.在此基础上,对其分子轨道、能级、最高占据轨道(HOMO)和最低空轨道(LUMO)、红外光谱(IR)、核磁共振谱(NMR)、紫外-可见吸收光谱(UV-Vis)进行了模拟计算.根据能级和分子轨道计算结果,主要讨论了苯乙烯化苯酚的最高占据轨道(HOMO)和最低空轨道(LUMO)的特点;获得了红外光谱(IR)、核磁共振谱(NMR)、紫外-可见吸收光谱(UV-Vis)计算结果,并对谱图数据进行了分析讨论.     

经式8-羟基喹啉铝的光谱与激发性质密度泛函

经式8-羟基喹啉铝(mer-Alq3)是一种光电性能优良的小分子有机半导体发光材料.本文采用密度泛函理论(DFT)B3LYP/6-31G*方法和基组对其进行结构优化,计算并研究了该分子的红外光谱、拉曼光谱和前线轨道.计算得到的红外光谱、拉曼光谱均与实验相符.前线轨道表明基态最高占据轨道(HOMO)的电子云主要集中在苯酚环,最低未占据轨道(LUMO)的电子云主要集中在吡啶环.用含时密度泛函理论(TDDFT)计算得到紫外-可见吸收光谱,采用空穴-电子分析法研究了电子激发特征.结果表明:电子从基态到激发态的跃迁,主要是8-羟基喹啉环内或环间的电荷转移,以π-π*跃迁为主,包括局域激发和电荷转移激发两种类型.本工作对mer-Alq3分子发光机理提出更深入的认识,能为进一步提高该分子发光效率和调控分子的发光范围提供一定的理论指导.     

外电场作用下TiO光激发特性研究

利用密度泛函BLYP方法优化得到了TiO分子的稳定构型,并计算了TiO分子基态在外场作用下前线轨道变化情况,然后利用杂化组态相互作用CIS-DFT方法,比较了TiO分子在外电场下的激发特性.结果表明,在一定的电场范围内,随着电场的增大,α轨道的最高占据轨道与最低空轨道能隙逐渐变小,β轨道能隙逐渐变大,同时可跃迁的低激发态跃迁波长随电场的增大而变长,高激发态波长变化相对复杂,且基态跃迁至激发态的耦合强度随外电场的增大而加强.     

外电场下L-茶氨酸分子的结构特征与光谱性质

L-茶氨酸(N-乙基-L-谷氨酰胺)是一类具有降压、抗氧化的非蛋白氨基酸,研究外场下它的结构和光谱特征有助于人们更好地认识L-茶氨酸分子的性质.基于密度泛函理论,利用B3LYP方法,在6-311g(d,p)基组水平上对L-茶氨酸分子进行几何构型优化,在此基础上计算L-茶氨酸分子在不同外电场下(0～0.0125 a.u.)的分子各键长与振动频率,得到对应的红外光谱.同时,在相同的基组下采用含时密度泛函方法(TD-DFT)计算外电场对分子的激发态、前线轨道和能隙的影响.结果表明:分子结构及其紫外、红外光谱都随外电场强度发生变化.随外电场的增加,伸缩振动频率红移,弯曲振动频率蓝移;最高占据轨道的能量(E_(HOMO))与最低空轨道的能量(E_(LUMO))发生改变,前线轨道能隙先小幅增加后随电场减小,分子活性先减小后增强;紫外吸收光谱先蓝移后红移.本研究对L-茶氨酸分子的检测、合成及其生物活性的研究可提供理论依据.     

苋菜红分子基态和激发态结构与光谱性质的量子化学研究

应用英国Edinburgh FLS920P光谱仪对苋菜红的吸收光谱和荧光光谱进行了实验检测.同时,分别采用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)对苋菜红分子的基态和激发态构型进行优化,经振动分析合理后,比较这两种能态下分子结构的差异,并对其前线分子轨道和发光机制进行了分析.在此基础上,选用6种泛函并结合溶剂化模型(PCM)在6-311++G(d,p)水平上分别计算苋菜红的吸收光谱和荧光光谱.计算结果表明:苋菜红含有分子内氢键,基态结构非平面,两个萘环所在平面有一定的夹角,激发态时两个萘环共平面;CAM-B3LYP泛函得到光谱的理论值与实验结果基本吻合;421 nm处的荧光峰值波长对应的轨道跃迁为LUMO→HOMO-1.     

基于密度泛函理论的肾上腺素分子的光谱分析

肾上腺素是一种神经和激素的传送体,研究肾上腺素分子的光谱和能级有助于了解其化学稳定性和药理作用。基于密度泛函理论（DFT）,利用Gaussian 09软件在B3LYP/6-311G（d,p）基组水平上对肾上腺素分子进行结构优化,采用含时密度泛函理论（TD-DFT）的PBE方法在def2tzvp基组水平上计算肾上腺素分子在气相中的前20个激发态,利用Multiwfn3.7（dev）软件绘制出其紫外光谱图并对激发性质进行分析。肾上腺素分子紫外光谱对应的主要跃迁是从基态分别到第1,2,4,8,15和16激发态的跃迁,其他的激发态的振子强度低于阈值0.03。理论计算得出肾上腺素的紫外光谱有两个吸收峰,分别位于206.23和273.92 nm,206.23 nm峰主要由基态跃迁到第16激发态形成,273.92 nm峰主要是基态跃迁到第2、4激发态形成,主要是由苯环上π→π*跃迁所产生,并与实验光谱吻合较好。对肾上腺素分子的激发态性质分析可知,上述吸收峰都是在最高占据轨道和最低空轨道的临近轨道跃迁产生的。利用密度泛函的PBE方法在6-311G（d, p）的基组水平上计算肾上腺素分子频率并绘制红外光谱,由振动分析可知,3 738和3 662 cm-1峰是由酚羟基O-H伸缩振动产生的特征吸收峰,3 715 cm-1峰是由醇羟基O-H伸缩振动产生的特征吸收峰,2 854 cm-1峰是由甲基的C18-H20键的伸缩振动产生的特征吸收峰,1 516和1 439 cm-1峰是苯环骨架的伸缩振动的特征吸收峰,1 279与1 057 cm-1峰分别是由C6-O10和C12-O23键伸缩振动产生的特征吸收峰,620 cm-1峰是N22-H17键摇摆振动的特征吸收峰。对比肾上腺素的实验红外光谱,发现理论光谱与实验光谱中各基团的特征吸收峰都较为明显且总体吻合较好。由于肾上腺素分子二聚体和多聚体之间形成氢键,分子间氢键的形成削弱了O-H键的强度,降低了能形成分子间氢键的羟基O-H的伸缩振动频率,从而导致实验光谱在3 500～2 500 cm-1之间呈现出一个宽峰。     

塞来昔布的密度泛函理论计算及光谱分析

塞来昔布(Celecoxib, CXB)是COX-2的高选择性抑制剂,经过20年的发展已经成为世界范围内使用最为广泛的一类处方药.本文基于密度泛函理论,使用B3LYP泛函,6-311++G(d, p)基组进行结构优化.在此工作上对该药物分子的结构、红外光谱、拉曼光谱、分子前线轨道、静电势和激发态性质做了一系列的研究.结果表明：CXB分子是一个稳定的非平面扭曲结构,此结构使得该药物分子在COX-2上的疏水通道中可以迅速通过,从而形成了一个可与苯磺酰胺片段结合的结合腔.对化合物进行频率计算,分别得到红外光谱和拉曼光谱,与实验采集的数据进行对比,呈现出较好的一致性.对分子的基态进行前线轨道和静电势的分析,磺酰胺基与COX-2易形成氢键作用.在CXB分子的激发态研究中发现,CXB分子的激发态性质主要由第1激发态、第3激发态和第6激发态共同决定.这为理解CXB的作用机理提供了重要的信息,也为后期扩展CXB衍生物提供了理论基础.     

激发态下甘氨酸与水分子间氢键性质研究

在生物体中氨基酸通常以水作为溶剂,是形成细胞的重要成分.在该环境下,分子间氢键的产生会对氨基酸分子与水分子的结构和性质产生影响.为了研究其在基态和激发态下的性质,本文利用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)对甘氨酸分子和H₂O分子在基态和激发态下的分子间氢键的静电势、键长、自然键轨道(NBO)电荷、分子中的原子理论(AIM)分析、Wiberg键级b、红外(IR)光谱、空穴-电子轨道和基态与激发态之间的电子转移进行了理论研究.结果表明：分子间氢键的形成会导致分子结构的改变和红外光谱振动频率的移动.在激发态下,分子间氢键有不同程度的增强或减弱.该计算结果为氢键的形成和激发态下分子间氢键的研究提供理论依据.     

Surface and interface properties of thin pentacene and parylene layers

To improve Organic Thin Film Transistor (OTFT) properties we study OTFT semiconductor/dielectric interfacial properties via examination of the gate dielectric using thin Parylene C layer. Structural and morphology properties of pentacene layers deposited on parylene layer and SiO₂/Si substrate structure were compared. The surface morphology was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM topography of pentacene layer in non-contact mode confirmed the preferable pentacene grain formation on parylene surface in dependence on layer thickness. The distribution of chemical species on the surfaces and composition depth profiles were measured by secondary ion mass spectroscopy (SIMS) and surface imaging. The depth profiles of the analyzed structures show a homogenous pentacene layer, characterized with C or C₂ ions. Relatively sharp interface between pentacene and parylene layers was estimated by characteristic increased intensity of CCl ions peak. For revealing the pentacene phases in the structures the Micro-Raman spectroscopy was utilized. Conformal coatings of parylene and pentacene layers without pinholes resulted from the deposition process as was confirmed by SIMS surface imaging. For the pentacene layers thicker than 20 nm, both thin and bulk pentacene phases were detected by Micro-Raman spectroscopy, while for the pentacene layer thickness of 5 and 10 nm the preferable thin phase was detected. The complete characterisation of pentacene layers deposited on SiO₂ and parylene surface revealed that the formation of large grains suggests 3D pentacene growth at parylene layer with small voids between grains and more than one monolayer step growth. The results will be utilized for optimization of the deposition process.      

In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

Molecular orientations of pentacene ultrathin films grown on SiO₂ substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO₂ surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO₂ substrate.     

Interaction between surface migrating pentacene molecules and chemically modified surfaces of silicon oxides studied by pulsed molecular beam scattering

The interaction between pentacene molecules and organic self-assembling monolayers formed on silicon oxides (SiO₂) was studied by measuring the surface scattering time profile of the pulsed molecular beam of pentacene. It was found that the surface residence time (SRT) of pentacene was significantly reduced on a surface treated with hexamethyl silazarane (HMDS) compared with that on a bare SiO₂ surface. The activation energies derived from the temperature dependence of the SRT were 24 kJ/mol and 100 kJ/mol for HMDS-SiO₂ and the bare SiO₂, respectively. A surface treated with octadecyltrichlorosilane (OTS) showed SRT values almost the same as those on the bare SiO₂ surface, which was due to exposed SiO₂ regions on the thermally-degraded OTS-SiO₂. The growth mechanism with improved quality is due to the shallower adsorption potential and enhanced migration of pentacene by the surface alkylation.     

对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

通过扫描电镜和X射线衍射对SiO₂衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在SiO₂衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100nm,且薄膜有较好的结晶取向,呈多晶态存在. 酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在. 还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究. 有源层的厚度为40nm,绝缘层SiO₂的厚度为250nm,器件的沟道宽长比(W/关键词： 有机薄膜晶体管 并五苯薄膜 酞菁铜薄膜 μ_EF)')" href="#">场效应迁移率(μ_EF)     

Morphological characterization of pentacene single crystals grown by physical vapor transport

Pentacene single crystals were grown by physical vapor growth. It was found that large-sized pentacene single crystals can be grown under 1 atm argon either in a closed tube or in an opened tube. The morphology of surface and transect of pentacene crystals was characterized by optical microscope, atomic force microscope and scanning electron microscope. Pentacene monolayers and layer-like structures are observed on the surface and in the interior of single crystals, respectively. The array of large straight steps is also observed on the surface of pentacene single crystals. All results indicate that the growth mechanism of pentacene single crystals is a two-dimensional nucleation-elementary steps-large straight steps-layer-by-layer periods growth.     

Growth of pentacene on Ag(1 1 1) surface: A NEXAFS study

Thin films of pentacene (C₂₂H₁₄) have become widely used in the field of organic electronics. Here films of C₂₂H₁₄ of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.XAS spectra at the C K-edge were collected as a function of the direction of the electric field at the surface. The different features of the spectra were assigned to resonances related to the various molecular unoccupied states by the comparison with the absorption coefficient of the pentacene gas phase. The transitions involving antibonding π states show a pronounced angular dependence for all the measured coverages, from submonolayer to multilayer. The spectra analysis indicates a nearly planar chemisorption of the first pentacene layer with a tilt angle of 10°.     

Studies on morphology and molecular arrangement of pentacene on different substrates

Pentacene (C₂₂H₁₄) thin films with different thicknesses were fabricated to study the dynamic growth process and morphology of pentacene on different substrates. A discontinuous monomolecular layer was observed when a pentacene thin film is about 0.5 nm thick on native oxide silicon wafer. The terraced islands and dendritic structure gradually formed with increasing pentacene thin film thickness. The height of each layer is about 1.4 nm which corresponds well with the length of the long axis of the pentacene molecule at 1.45 nm. Experimental results show that the pentacene molecule is perpendicular to the silicon wafer surface with a slight tilted angle. However, the pentacene molecular orientation on a polymer pre-covered indium tin oxide coated substrate could not give any indication on the scale of nanometers. The surface roughness of substrates strongly influences pentacene molecular diffusion and the morphology of pentacene thin films.     

Molecules on insulating films: scanning-tunneling microscopy imaging of individual molecular orbitals

Ultrathin insulating NaCl films have been employed to decouple individual pentacene molecules electronically from the metallic substrate. This allows the inherent electronic structure of the free molecule to be preserved and studied by means of low-temperature scanning-tunneling microscopy. Thereby direct images of the unperturbed molecular orbitals of the individual pentacene molecules are obtained. Elastic scattering quantum chemistry calculations substantiate the experimental findings.     

Photoemission, NEXAFS and STM studies of pentacene thin films on Au(1 0 0)

We have investigated the initial stages of the growth of pentacene thin films on the Au(1 0 0) substrate using synchrotron radiation photoelectron spectroscopy (PES), near edge X-ray absorption fine structure (NEXAFS) and scanning tunnelling microscopy (STM). Results indicate a well-ordered structure with the pentacene molecules adopting a predominantly flat orientation with respect to the substrate for coverages of less than three monolayers. NEXAFS and photoemission data indicates the presence of a second molecular orientation for thicker films, with the introduction of a slight tilting away from planar bonding geometry at higher pentacene coverages. STM images of coverages less than three monolayers indicate a well-ordered pentacene structure allowing for the calculation of pentacene unit cell parameters. The pentacene molecular rows adopt a side-by-side bonding arrangement on the surface. For pentacene deposited at room temperature, step edges were observed to act as nucleation centres for film growth. Annealing of the substrate to 373 K was found to remove excess molecules and improve film quality, but did not otherwise change the bonding geometry of the pentacene with respect to the surface.     

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increa...