O2 plasma oxidation effect on magnetic properties of spin valves

The use of nano-oxide to improve the performance of spin valves has been extensively studied. But most of the investigations so far have been carried out on different samples. This may make some of the conclusions drawn from the experiments inconsistent because of the fluctuation in deposition conditions and device structures. In this work, the effect of nano-oxide on the properties of spin valves has been investigated through post-growth oxidation of the same sample in oxygen plasma for different rf powers and durations. The sample investigated was a bottom spin valve with the structure Si/SiO₂/Ta/NiFe/IrMn/CoFe/Cu/CoFe/Ta. A relative increase of 20% and 12% was obtained in the giant magnetoresistance (GMR) ratio of as-deposited and annealed samples, respectively. It was found that, at a fixed rf power, there is a peak of the GMR ratio as the oxidation time increases. A higher peak value of the GMR ratio was obtained for lower rf power, although the required oxidation time is longer. This result can be well understood by considering both the enhanced specularity at the insulator/metal interface and the loss of magnetic effective thickness of the free layer by the oxidation. Magnetic parameters such as the interlayer coupling field (H₀) and the coercivity of the free layer (H_cf) were also greatly influenced by the oxidation process. When only the Ta layer was oxidized, H₀ increases very slightly, and H_cf increases with the oxidation time. However, when the CoFe free layer was oxidized, a significant increase was found for H₀, and H_cf changes to decreasing. These results can be explained based on the Néel and RKKY coupling models. Received: 25 October 2001 / Accepted: 21 December 2001 / Published online: 3 June 2002     

Influence of rapid stress annealing on magnetic and structural properties of nanocrystalline Fe74.5Cu1Nb3Si15.5B6 alloy

Influence of rapid stress annealing on magnetic and structural properties of nanocrystalline Fe_74.5Cu₁Nb₃Si_15.5B₆ alloys is reported. Increase of stress during annealing reduces the initial permeability (from 2600 to 280) whereas the anisotropy field increases almost linearly (from 10 to 3470 A/m) showing the induction of anisotropy in the specimens. From WAXS experiments, volume fraction of the crystallites varies between 53 and 60% with quite similar average grain diameter (∼9 nm), increase of applied stress during annealing leads to the elongation of the unit cell. From Mössbauer spectra, increase of stress during annealing shows appreciable changes in spin texture.     

Hysteresis-free spin valves with a noncollinear configuration of magnetic anisotropy

A noncollinear configuration of magnetic anisotropy in spin valves with strong and weak interlayer couplings has been formed by annealing and cooling in a magnetic field. The dependence of the low-field magnetoresistance hysteresis loop width on the angle between the applied magnetic field and the principal axes of the magnetic anisotropy in a spin valve has been investigated. It has been found that, only in the case of a strong ferromagnetic interlayer coupling, the formation of a noncollinear configuration of the magnetic anisotropy provides a hysteresis-free character of the magnetization reversal of the free layer with retaining the maximum magnetoresistance and magnetoresistive sensitivity.     

Effect of magnetic field annealing on microstructure and magnetic properties of FePt films

FePt (20 nm) films were annealed in a magnetic field (along the normal direction of the films) at a temperature around the Curie temperature of L1₀ FePt. The influence of magnetic filed annealing on texture and magnetic properties of FePt films were investigated. The results indicate that preferential (0 0 1) orientation and perpendicular anisotropy can be obtained in L1₀ FePt films by using magnetic field annealing around the Curie temperature of L1₀ FePt. This is one of the potential methods to obtain (0 0 1) orientation and thus to improve the perpendicular anisotropy in FePt films.     

Influence of annealing on magnetic properties of Co-based metallic glasses

The influence of low-temperature annealing on the magnetic hysteresis loop parameters of magnetostrictive Co-Si-B and nonmagnetostrictive Co-Fe-Si-B glasses was studied. The dependence of Curie temperature (T_C), crystallization temperature (T_x), full-stress-relaxation temperature, saturation magnetostriction constant, saturation magnetization and coercive field H_c on metalloids contents for as quenched Co_100-x(Si_0.5B_0.5)_x glasses was determined.It was found that annealing enhances remanence magnetization for all investigated Co-Si-B glasses. The coercive field of these glasses is influenced by annealing owing to: stress relaxation (resulting in an H_c decrease) and domain structure stabilization (resulting in an H_c increase). Significant H_c reduction for both magnetostrictive and non-magnetostrictive glasses was observed, after annealing above T_C. For glasses with T_C<>T_x, it was necessary to apply an external magnetic field in ord er to decrease H_c.It was found that non-magnetostrictive metallic glasses with low Curie temperatures (T_C ? 450 K) exhibit the most stable magnetic hysteresis loop parameters.     

Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs

The behavior of the defects created in the gate oxide and at the Si/SiO₂ interface of n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) by irradiation and positive high electric field stress have been investigated. Interface traps exhibit the same behavior after both types of stress, while there are significant differences in post-stress responses of the charge trapped in the oxide, consisting of fixed and switching component.     

Screening of the magnetic field by magnetic monopoles in spin ice

The screening of the external magnetic field by magnetic monopoles in spin ice has been considered. The polarization of the magnetic system with moving monopoles has been shown to result in the incomplete screening of the external magnetic field. The static permeability of spin ice and the magnetic-field screening length have been calculated and numerically estimated and the physical meaning of introducing monopoles is discussed.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

The magnetic field effects on the frustrated antiferromagnetic spin chain

We presented a numerical study of the magnetization process of frustrated spin-1/2 chain. Using the exact diagonalization technique, we provided the evidence that a plateau at one-third of the saturation magnetization exists in the magnetization curve of frustrated antiferromagnetic spin-1/2 chain.     

Influence of thermal annealing on oxidation states of Al-oxide in spin tunneling junctions

The dielectric constant in annealing coercive differential spin tunneling junctions Co/Al-oxide/Co has been investigated in order to clear the influence of thermal annealing on oxidation states. Al oxidized naturally in pure O₂ shows the relative dielectric constant of 10–40 before annealing. It indicates that Al oxidized in pure O₂ can be AlO₂ because the dielectric constant of AlO₂ is approximately 22.7. This dielectric measurement result is in good agreement with XPS analysis results that O/Al ratio is 1.9–2.0. After annealing at temperature ranging from room temperature up to 250 °C, the relative dielectric constant approaches approximately 8.0, which is equal to that of Al₂O₃. This indicates that the phase of Al-oxide is changing from AlO₂ to Al₂O₃ by annealing. This dielectric measurement will help investigate the oxidation state, such as chemical composition for junctions themselves.     

Dependence of electron spin g-factor on magnetic field in quantum wells

The dependence of electron spin g-factor on magnetic field has been investigated in GaAs/AlGaAs quantum wells. We have estimated the electron g-factor from spin precession frequency in time-resolved photoluminescence measurements under a magnetic field in different configurations; the magnetic field perpendicular (g_⊥) and parallel (g_∥) to the quantum confinement direction. When the angle between the magnetic field and the confinement direction is 45°, we have found that g-factor varies depending on the direction of magnetic field and the circular polarization type of excitation light (σ⁺ or σ^?). These dependences of g-factor exhibit main features of Overhauser effect that nuclear spins react back on electron spin precession. The value of g_⊥ and g_∥ corrected for the nuclear effects agree well with the results of four-band k·p perturbation calculations.     

The influence of thermal annealing on the structural and magnetic properties of gold nanoparticles

In the past few years ferromagnetic-like behavior has been reported in metal gold nanoparticles coated with diverse organic surfactants. In this work we report on the effect of thermal annealing on the ferromagnetic-like behavior of oleic acid and oleylamine coated gold nanoparticles of about 7 nm size. The magnetic moment of the “as prepared” sample is about 3×10⁻² emu/g and the coercive field is 200 Oe at 10 kOe and 5 K, after the annealing the behavior changes from ferromagnetic-like to paramagnetic and the magnetization at 10 kOe decreases at a factor of 10. These results are compared with those obtained for oleylamine coated gold nanoparticles, which are diamagnetic at room temperature.     

Influence of magnetic field on exciton luminescence

The magnetic field dependence of the exciton emission intensity I_ex(H) has been investigated in Ge crystals stressed along the direction near 〈100〉. In the low field limit the magnetic field correction has been evaluated to the wave functions of the ground and some excited states of an isotropic exciton. The calculated dependence I_ex(H) in the case of Ge is in a good agreement with the experimental one at H ? 0.5 T.     

Behavior of Ising spin glasses in a magnetic field

We study the existence of a spin-glass phase in a field using Monte Carlo simulations performed along a nontrivial path in the field-temperature plane that must cross any putative de Almeida-Thouless instability line. The method is first tested on the Ising spin glass on a Bethe lattice where the instability line separating the spin glass from the paramagnetic state is also computed analytically. While the instability line is reproduced by our simulations on the mean-field Bethe lattice, no such instability line can be found numerically for the short-range three-dimensional model.     

Generation of an axial magnetic field from photon spin

In circularly polarized light the spins of the photons are aligned. When a short intense pulse of circularly polarized laser light is absorbed by a plasma, a torque is delivered initially to the electron species, resulting primarily in an opposing torque from an induced azimuthal electric field. This electric field, in general, has a curl and leads to the generation of an axial magnetic field. It also is the main means for transferring angular momentum to the ions. The time-dependent magnetic field has a magnitude proportional to the transverse gradient of the absorbed intensity but inversely proportional to the electron density, in contrast to earlier theories of the inverse Faraday effect.     

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 °C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 Å each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 °C in a step of 100 °C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 °C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 °C due to the formation of TiNi₃ and Ti₂Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes.     

Effect of high magnetic field annealing on the microstructure and magnetic properties of Co-Fe layered double hydroxide

The effects of high magnetic field (10 T) on the products obtained by calcination of Co-Fe LDH precursors at different temperatures were investigated. The XRD results indicated that Fe^III substituted for Co^III in Co₃O₄ to yield Co^IICo^IIIFe^IIIO₄ under the calcination of Co-Fe LDH precursors at 400 °C. The products obtained by magnetic field annealing at 400 °C had a porous plate-like morphology, whereas the products without magnetic field annealing were composed of nanoparticles. It was seen that CoFe₂O₄ phase could be formed at low temperature (about 500 °C) under the magnetic field annealing. The grain size of products obtained by magnetic field annealing at 800 °C was larger than that of zero magnetic field. It was found that the saturation magnetization was significantly enhanced after magnetic field annealing, especially at lower temperature (≤600 °C). The possible reason for the effects on the microstructure and magnetic properties of products obtained by magnetic field annealing was discussed.     

退火对IrMn基磁隧道结多层膜热稳定性的影响

采用磁控溅射方法制备了结构为IrMn/CoFe/AlO_x/CoFe的磁性隧道结多层膜,样品置于真空磁场中进行退火处理. 将在不同温度退火的磁隧道结结构多层膜置于负饱和场中等待,研究退火温度对样品热稳定性的影响. 结果表明:退火提高了多层膜反铁磁层的单轴各向异性能,增加了样品的交换偏置;随着负饱和场等待时间的延长,被钉扎层的磁滞回线向正场偏移,交换偏置单调减小,但退火减弱了这种趋势. 关键词： 磁隧道结 交换偏置 磁化反转     

Effects of electric field and magnetic induction on spin injection into organic semiconductors

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed.