准周期原胞超晶格中的横声子谱

本文计算了准周期原胞超晶格中横弹性波的体和面模式的色散关系,导出了用传输矩阵表述的动力学格林函数,并用以计算了热涨落的谱密度。结果表明由于系统对于垂直于超晶格轴的平面不存在反映对称性,当表面截取在原胞内F_m个不同的界面上时(F_m是Fibonacci数)半无限样品的横声子表面谱呈现F_m种截然不同的形式。     

GaAs/AlGaAs Fibonacci准周期超晶格带间跃迁的光谱研究

运用光致荧光,光调制反射和光电流谱等方法研究了11级的GaAs/AlGaASFibonacci准周期超晶格的带间跃迁,并用转移矩阵方法计算了Fibonacci准周期超晶格和相应的周期性超晶格的子能级和子能带.理论计算与实验结果符合得很好. 关键词：     

TiN／VN超晶格薄膜的切变弹性模量的计算

采用赝势方法计算TiN/VN超晶格薄膜的能带结构，并计算了TiN/VN超晶格原胞的总能量，进而得到了该材料的切变弹性模量C44随超晶格周期的变化关系，C44出现最大值时所对应的周期与实验值基本一致。     

一维Fibonacci类准晶的衍射性质

利用傅里叶变换方法推导了一维Fibonacci类(FC(n))准晶衍射的结构因子方程,讨论了该系统的衍射峰和系统消光规则.在此基础上,计算了FC(1)和FC(3)准点阵的衍射谱.另外,把所得方程进行推广使之能用来研究FC(n)准周期超晶格的衍射性质.通过把FC(1)准周期超晶格衍射相对强度的计算结果与Merlin等人的实验结果进行比较,发现大多数衍射谱符合得较好,但有一条谱不一致.理论计算表明Merlin等人标定的谱(4,2)应该是一个次强峰.     

一维Fibonacci类准晶的衍射性质

利用傅里叶变换方法推导了一维Fibonacci类(FC(n))准晶衍射的结构因子方程,讨论了该系统的衍射峰和系统消光规则.在此基础上,计算了FC(1)和FC(3)准点阵的衍射谱.另外,把所得方程进行推广使之能用来研究FC(n)准周期超晶格的衍射性质.通过把FC(1)准周期超晶格衍射相对强度的计算结果与Merlin等人的实验结果进行比较,发现大多数衍射谱符合得较好,但有一条谱不一致.理论计算表明Merlin等人标定的谱(4,2)应该是一个次强峰.     

GexSi1-x/Si超晶格的X射线小角衍射分析

用分子束外延生长了23周期的Ge_xSi_1-x/Si超晶格,用计算机控制的衍射仪(CuK_a辐射)测量了X射线衍射曲线,共观察到13级超晶格结构的衍射峰。超晶格的周期和Ge平均含量可以根据考虑折射修正的布喇格定律得出。用光学多层膜反射理论分析衍射曲线可以确定超晶格的结构参数,第2级衍射峰与第一级峰的强度比对应于超晶格两种材料的相对厚度变化非常灵敏,通过比较实验和计算的I₂/I₁值,可以确定Si,Ge_xSi_1-x层的厚度以及合金组份x。用光学多层膜反射理谁计算得到的衍射曲线与实验曲线趋于一致。 关键词：     

MOCVD-GaxIn1-xAsyP1-y/InPDBR结构的晶格振动

利用微区Raman散射技术研究了MOCVD-Ga_xIn_1-xAs_yP_1-y/InPDBRs结构的晶格振动。在InP衬底上生长的与InP晶格匹配的四元合金Ga_0.4In_0.6As_0.85P_0.15中包含三种主要的振动模式,分别归属于类InAs、类GaAs和类GaInP。随着Ga_0.4In_0.6As_0.85P_0.15与InP交替生长构成的DBRs结构周期数增加,Raman散射谱中三种振动模式的谱线线型发生明显变化,类InAs振动强度不变,谱线窄化,峰值位置向低频方向移动,类GaAs和类GaInP振动强度逐渐减弱。同时类InAs与类GaAs振动强度比增大。Raman散射研究中声子的限制效应表明多层结构生长过程中界面存在非完整晶态。     

正方点阵上Fibonacci超元胞声子晶体的带结构

用平面波展开方法研究了水柱体作为填充物, 按照二维Fibonacci排列成超元胞填充在Hg基体中构成的声子晶体的声频带结构. 结果发现, 随着超元胞中准晶格常数的变化, 各个能带均出现三分裂. 对声场分布的研究发现了居间态的存在. 这些现象体现了准周期结构的特征. 关键词： Fibonacci排列 声子晶体 能带结构     

超晶格正长石的高分辨透射电子显微镜研究

对产自山东五莲辉石二长岩中的正长石进行了高分辨透射电子显微镜(HRTEM)研究,确定这一正长石属大周期超晶格正长石。其扩展晶胞参数与三斜亚晶胞参数间的关系为α=α_tc,b≈8b_tc,c=c_tc,β=β_tc(下标tc表示三斜亚晶胞)。这一超晶格正长石是由一系列的三斜晶畴组成。它是钾长石从C2/m对称向Cl对称的相变过程中,通过四面体中Si-Al间的有序化而形成的一种中间态调制结构。 关键词：     

准周期调制下自旋1/2反铁磁XY模型中的晶格畸变行为

利用严格对角化方法研究了Thue-Morse准周期调制下 自旋1/2反铁磁XY模型中的晶格畸变行为. 结果显示: 系统中每个格点的晶格畸变幅度介于均匀分布和无序分布之间. 对于较弱的准周期调制, 调制强度的增加有利于晶格畸变的形成. 但是, 对于较强的准周期调制, 调制强度的增加则阻碍晶格畸变的形成. 此外, 系统低能谱的能隙也明显受到准周期调制的影响. 关键词： 晶格畸变 Thue-Morse序列 准周期调制     

Anisotropy of the effective mass of 2D electrons in a heterojunction with a lateral superlattice on vicinal faces

The anomalous shift in the maxima of the Shubnikov—de Haas transverse magnetoresistance oscillations in AlGaAs(Si)/GaAs with 2D electrons oriented in the [110] direction with respect to [{ie468-1}10] in large magnetic fields is explained by the formation of a lateral superlattice with an increase of the effective mass (m_[110]* > m_[{ie468-2}]*). Ryazan State Pedagogical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, No. 5, pp. 79–82, May, 1998.     

Self-organization mechanism of GalnP quantum wires in (GaP) m /(lnP) m short-period binary superlattices for GalnP/AllnP multi-quantum-wire (MQWR) lasers

A mechanism for self-organization of GalnP strained quantum wires in (GaP) _m /(lnP) _m short-period binary superlattice (SPBS) is discussed. To elucidate the self-organization mechanism, GalnP/AllnP compressively strained multi-quantum-wire (CS-MQWR) lasers were fabricated, changing the superlattice monolayer numberm in (GaP) _m /(lnP) _m SPBS active layers. The self-organization occurred form>1.2, determined from transmission electron microscopy images and from the anisotropic TM/TE polarization ratio in electroluminescence, i.e. an anisotropic dipole moment.The mechanism by which quantum wire axes were selected to the direction is discussed in terms of the anisotropy in adatom diffusion between [011] and directions. To confirm this, (GaP)_1.2/(lnP)_1.2 SPBS layers were grown on GaAs (100) substrates misoriented towards the [011] direction, on which the [011] adatom diffusion is suppressed. Enhanced quantum wires self-organization by substrate misorientation was observed, showing that anisotropic diffusion played an important role.The mechanism modelling of the lateral compositional modulation is discussed considering the initial growth of films largely mismatched to bottom crystals. The lateral compositional modulation is supposed to be related to GaP wire-like nuclei induced by large strain energy in the first GaP layer growth in (GaP) _m /(lnP) _m SPBSs.GalnP/AllnP CS-MQWR lasers with lowJ _th values of 257 A cm^–2 were obtained atm=1.5.     

Optic and acoustic plasmon modes of a semiconductor superlattice

The collective plasmon modes of s semiconductor superlattices consisting of alternating layers of electrons and holes or alternating layers of electrons with different densities are investigated. For wells widely separated in space, such that Bloch wavefunction overlap between wells is negligible, we find optical-like and acoustical-like plasmon modes propagating along the superlattice direction. Perpendicular to the superlattice direction, the acoustic mode (ω～q_″) recently observed by Olego and Pinczuk⁸ is found to be split into two acoustic branches.     

Incomplete relaxation and plasmon formation in the K emission band of copper

A method of calculating the effect of self-absorption in X-ray emission spectra and which is suitable for non-adiabatic excitation processes is presented. The Fermi-level E_F and the “true” profile of the electron-excited (20–40keV) CuKβ_2,5 band are determined. A deviation from the calvulated one-electron spectrum in the energy interval [-12 eV, -7 eV] below E_F is interpreted as a result of plasmon formation and Auger broadening. A pronounced disagreement is found also in the range [-1 eV, + 10eV]. Above E_F, a part of the intensity may be due to incomplete electron relaxation.     

Separation of cross-relaxation and exchange in two-site spin systems without resolved couplings

Variable temperature two-dimensional nuclear Overhauser enhancement experiment (2-D NOESY) is used to extract the rate constants and cross-relaxation rates that contribute to the same cross-peaks in NOESY spectra. Rate constants (k _AB) and cross-relaxation rates (R _AB) for two-site spin systems are related to the ratio between the cross-peak and diagonal peak integrals (F) by the expression:R _AB -k _AB = (1/2τ _m)ln[(1 -F)/(1 +F)], where τ_m is the mixing time. As a model, we investigated the exchange processes in a system of dimer calix[4]arenes of C_4v symmetrical configuration with guest inclusion (benzene or benzene-d₆), where the measurement of exchange processes is hindered by the presence of strong nuclear Overhauser enhancement between protons in adjacent aromatic rings in the cone conformation of the calix[4]arene.     

Influence of magnetic field on cesium thermionic energy converter

This article deals with the calculation of the influence of the magnetic field upon the electric current of a thermionic converter presupposing the approach to conditions in a low-pressure cesium converter. The distribution of the starting velocities of the emitted electrons is considered firstly as independent of the angle from the perpendicular to the emitter plane, and secondly according to the cosine law.The magnetic field effect from the converter current is calculated and compared with the calculations in the papers by Schock [1] and Block [2]; the effect of the external magnetic field is verified by measurements on a solar thermionic converter prototype.Symbols F=I/I ₀ factor of current reduction from magnetic field effect - ¯F value of factorF (when the magnetic field is not constant) - I [A/m²] density of collector current (real current influenced by magnetic field) - I ₀ [A/m²] theoretical density of collector current (in ideal case equals electron emission current) - T _e [°K] electron gas temperature; assumed equal to emitter temperatureT _E [°K] - B[Wb/m²] magnetic induction (field) - D[m] distance from emitter to collector - R[m] radius of electrodes, emitter and collector - r[m] variable radius in the limits 0 toR - V [m/s] random velocity of electron - v _xz [m/s] component of the vectorV inx-z plane - v _m =2kT _E /m most probable velocity in the velocity distribution according to Maxwell and Boltzmann - w-v _xz /v _m relatively expressed electron velocityv _xz - the angle of any vectorV - [m] radius of circular electron path - n [m^–3] number (density) of electrons with certain value of random velocity - n ₀ [m^–3] total electron number (density) - n ₁ [m^–3] number of electrons returned to emitter by means of magnetic field - N ₀ [m^–2s^–1] total flow of thermionic electrons emitted from a unit surface - N ₁ [m^–2s^–1] partial flow of electrons returned to emitter - P=N ₁/N₀ relatively expressed flow of electrons returned to emitter (whenB = const.) - ¯P mean value ofP (whenB const.) - F _cos, ,P _cos, values asF,¯F,P,¯P in case of velocity distribution according to cosine law - m=9·107×10^–31 [gk] electron mass - e=1·60×10^–19 [C] electron charge - k×1·38×10^–23 [J/grad] Boltzmann's constant - ₀ 1·257×10^–6 [H/Vs] permeability of vacuum     

Plasmon modes of a superlattice — Classical vs quantum limits

The collective plasmon excitations of a superlattice are investigated in both the classical and quantum limits. Using a model that is applicable to superlattices whose constituent layers are either semiconductor- semiconductor, semiconductor-metal, or metal-metal, we show that the surface plasmon interface modes of each layer (slab) couple via the long range Coulomb interaction into two bands of plasmons with dispersion along the superlattice axis. Results for plasmon dispersion are presented for the classical limit (de Broglie wavelength less than the layer width) where the response is treated via a solution of Maxwell's equations using the bulk 3-D dielectric constant to describe each intervening layer. These results are compared to the plasmon dispersion in the quantum regime where the wave-vector frequency dependent dielectric constant of the superlattice is calculated taking into account quantization effects (subband structure). The relationship between the modes in both limits is derived.     

Surface morphology of sputter deposited low melting point metallic thin films

This paper describes the development of surface morphology of thin InSn(90/10), In, Sn and Cr films, deposited on unheated glass substrates by d.c. magnetron sputtering, with the film thickness. The experiments show that the surface morphology of metallic films with low melting pointsT _m[InSn(90/10)–150°C, In–156.6°C, Sn–231.8°C] and that with high melting pointT _m [Cr–1875°C] strongly differ. InSn(90/10) and Sn films with thickness greater than about 30 nm and also In films with even lower thickness of about 20 nm have a rough surface, milky color and matt appearance. On the contrary, Cr films of the same thickness have a smooth and shiny surface. It is due to a large difference in normalized temperaturesT/T _m for low-T _m films [Sn–0.59, In–0.70, InSn(90/10) –0.71] and for high-T _m films [Cr–0.14] deposited at low temperatures close to room temperature (RT). High values of the ratioT/T _m>0.5 clearly indicate that just the low melting point materials can crystallize at low temperatures close to RT. A crystallization of lowT _m films results in rough surface, milky color and matt appearance of these films.This work was supported in part by the Grant Agency of Czech Republic under Grant No. 202/93/0508.     

Photoemission on highT c superconductors

Ultrathin-layer (AlAs) _m (GaAs) _m superlattices withm = 1, 2, and 3 were grown by molecular beam epitaxy and characterized by x-ray diffraction and photoluminescence measurements. The appearance of distinct satellite peaks around the Bragg reflections demonstrate the formation of high-quality layered crystals. The observed luminescence shows a maximum at 2.033 eV form = 3, and the emission energy decreases form = 2 andm = 1 as well as for them = 4 superlattice. This result for the monolayer superlattice is in good agreement with recent theoretical calculations, and it shows that the (AlAs)₁(GaAs)₁ superlattice represents a new artificial semiconductor material with novel electronic properties.On leave from Mitsubishi Electric Corp., Central Research Laboratory, Amagasaki, Hyogo 661, JapanOn leave from Institute of Semiconductors, Academia Sinica, Beijing, PR China     

Distinction between avalanche and tunneling breakdown in one-sided abrupt junctions

The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF _t. It is shown thatF _t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm _eff ⁺ /m _o and the semiconductor energy band gapE _g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.