共查询到20条相似文献,搜索用时 62 毫秒
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介绍了一种用于等离子体焦点装置(DPF装置)中子波形测量的塑料闪烁体探测器,该探测器由ST401型塑料闪烁体、XP2262B型光电倍增管构成。利用银活化中子探测器和DPF装置对该塑料闪烁体探测器进行标定,确定其中子灵敏度为0.022 5 pC每中子,,中子产额测量范围达到109~1011每脉冲,可以满足DPF装置中子参数测量的需要。 相似文献
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介绍了一种用于等离子体焦点装置(DPF装置)中子波形测量的塑料闪烁体探测器,该探测器由ST401型塑料闪烁体、XP2262B型光电倍增管构成。利用银活化中子探测器和DPF装置对该塑料闪烁体探测器进行标定,确定其中子灵敏度为0.022 5 pC每中子,,中子产额测量范围达到109~1011每脉冲,可以满足DPF装置中子参数测量的需要。 相似文献
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根据二次回路实验装置的现状、存在的缺陷及发展趋势,研制了一套高压断路器控制及事故信号电路的仿真实验装置用于电气专业教学和实习.经过在相关实验课中应用,取得了较好的教学效果. 相似文献
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设计了一种基于网络化的随钻测井地面采集管理平台,能在钻井过程中实时获取各种井下随钻仪器测量的参数,并根据需要绘制成曲线或者图像;该采集管理平台是基于Windows开发环境,采用Vs2010设计开发,具有高度可靠的数据采集、便捷的仪器挂接等特点,可挂接常规MWD测量仪器、常规LWD测井仪以及随钻成像仪器等;介绍了其主要功能模块,并且该采集管理平台在长庆油区进行了现场应用,结果表明,系统能够准确的对井下仪器的各种测量参数等进行解码,包括井斜、方位、工具面以及伽马、电阻率等,数据计算正确,软件运行稳定可靠、操作方便,能够满足工程的现场需要。 相似文献
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国际聚变材料辐照装置屏蔽中子学设计研究 总被引:1,自引:0,他引:1
介绍了中国科学院等离子体物理研究所与德国Forschungszentrum Karlsruhe合作开展的国际聚变材料辐照装置(IFMIF)屏蔽中子学方面的相关设计研究工作。重点介绍了新开发的三维耦合屏最计算方法,包括其基本原理和程序系统等,以及基于该方法的IFMIF的三维屏蔽计算典型结果与分析。The International Fusion Materials Irradiation Materials Irradiation Facility (IFMIF) is a joint project within the framework of the Fusion Materials Implementing Agreement of the International Energy Agency (IEA). Shielding is one of the key issues of the IFMIF engineering design. Due to the complex geometry and large size of the shields, it is difficult to make accurate shielding design using the conventional computational tools. To handle this problem, a coupled 3-D computational scheme has been developed under the cooperation of the Institute of Plasma Physics of Chinese Academy of Sciences and Forschungszentrum Karlsruhe Germany. This paper presents the newly-developed 3-D coupled computational scheme and its application to the IFMIF shielding design. 相似文献
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锁相检测式二维小角度测量装置 总被引:2,自引:1,他引:1
介绍了一种新型的二维小角度检测装置。由于该装置采用了光电自准直结构,以高灵敏度的四象限硅光电探测器作为检测元件,采用交流调制,锁相放大的方法对信号进行了处理,所以有效地消除了直流漂移的影响,提高了稳定性和测试精度。分析了光斑的形状和大小对测试结果的影响,研制了专门的标定装置。首先由高精度的光电自准直仪标定测量角度与输出信号的关系,并将相关数据存入单片机,然后由软件拟合出关系曲线。测量时,既可自动显示角度的大小,同时也可以与计算机相连。该测试系统结构小巧,具有较高的测量精度。 相似文献
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在核聚变实验中, 积分器是还原微分信号的基本手段,低漂移积分器系统的研制是托卡马克实验中
的重要环节。介绍了用于 HL-2M 装置磁测量的低漂移积分器系统。通过模拟与数字补偿相结合的方法减小漂移,
提高了信号间的测量精度。性能测试显示,积分器输出漂移小于 2mV/15s,积分时间常数精度优于 0.3%。该积分
器应用于 HL-2M 装置实验,满足磁测量系统的测量需要。 相似文献
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介绍了中高能电子散射全截面绝对测量装置的设计,采用直线透射技术.因采用了恒温控制作用室,以便较准确测量反应室的绝对气压值;同时采用静电型圆柱能量分析器,并用计数率测量模式代替通常的束流强度测量模式,从而可以大幅度减小接收立体角,抑制零度角的弹性散射贡献.通过以上几项措施,可以有效地提高测量的精度,从而可以对一些有意义的分子的中、高能电子散射全截面进行绝对测量. 相似文献
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采用蒙特卡罗模拟方法研究了微结构参数、填充致密度等因素对沟槽型微结构半导体中子探测器(MSND)性能的影响规律,并开展了沟槽型MSND的优化设计研究。研究表明,随着沟槽间距的增加,MSND的探测效率呈下降趋势;当沟槽间距固定时,存在最优的沟槽宽度使得探测效率最大化;沟槽深度越大,探测效率越高。沟槽宽度和沟槽间距为15 m和5 m是一对优化的参数组合,可保证较高的探测效率和较平稳的系统甄别阈-探测效率曲线。当系统甄别阈取300 keV时,沟槽宽度、间距和深度分别为15,5 m和200 m时的MSND热中子本征探测效率可达37.77%,与平面探测器相比提高了9.2倍;对137Cs源662 keV伽马射线的中子-伽马射线甄别比可达4.1103,与平面探测器相比提高了23.7倍。本工作从理论上证明了MSND可解决传统平面型半导体中子探测器探测效率低的难题,同时可保持半导体探测器中子-伽马射线甄别容易的特点。 相似文献
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A compact neutron spectrometer based on the liquid scintillator is presented for neutron energy spectrum measurements at the HL-2A Tokamak. The spectrometer was well characterized and a fast digital pulse shape discrimination software was developed using the charge comparison method. A digitizer data acquisition system with a maximum frequency of 1 MHz can work under an environment with a high count rate at HL-2A Tokamak. Specific radiation and magnetic shielding for the spectrometer were designed for the neutron spectrum measurement at the HL-2A Tokamak. For pulse height spectrum analysis, dedicated numerical simulation utilizing NUBEAM combined with GENESIS was performed to obtain the neutron energy spectrum. Subsequently, the transportation process from the plasma to the detector was evaluated with Monte Carlo calculations. The distorted neutron energy spectrum was folded with the response matrix of the liquid scintillation spectrometer, and good consistency was found between the simulated and measured pulse height spectra. This neutron spectrometer based on a digital acquisition system could be well adopted for the investigation of the auxiliary heating behavior and the fast-ion related phenomenon on different tokamak devices. 相似文献
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在测量各种双口网络电路的频率特性时,需要对它们的输入与输出信号之间的相位差进行准确测量,针对采用示波器测量相位差误差较大的问题,提出一种能对信号相位差进行高精度测量的设计方案;系统采用过零鉴相和填充计数的测量原理,利用可编程逻辑器件的高速运算能力对高速脉冲计数,由单片机对工作电路进行协调控制和数据处理显示;同时设计高精度相位差可调的直接数字频率合成信号源对系统进行测试,实际测试结果显示,系统对相位差的测量精度高,最小测量精度可达0.1o,并实现宽频率范围的相位差测量。系统在实际应用中测量结果准确、稳定、可靠。 相似文献
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Improved interface properties of an Hf02 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
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A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density (0.785 × 10^-6 Alcm^2 at Vfo + 1 V) and lower interface-state density (2.9 × 10^12 eV^-1 ·cm^-2) compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses. 相似文献
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Improved interface properties of an HfO_2 gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer
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A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx ) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785 × 10-6 A/cm2 at Vfb + 1V) and lower interface-state density (2.9 × 10 12 eV-1 ·cm-2 ) compared with other samples with N2-or NH3-plasma pretreatment. The influences of post-deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses. 相似文献