拓扑量子材料简介

近20年来,拓扑量子物态和材料已成为凝聚态物理领域最为重要、发展最快的前沿领域之一。文章简单回顾这一领域的研究进展,介绍包括拓扑材料体系、磁性拓扑材料、拓扑超导体及相关物理。这些材料涉及的研究范畴广泛,未来可能推动电子学、自旋电子学、光学等各个方向的基础研究和产业发展。     

拓扑绝缘体的普适电导涨落

拓扑绝缘体因其无能量耗散的拓扑表面输运而备受关注, 揭示拓扑表面态因其 的贝利相位而产生的拓扑输运现象, 将有助于拓扑绝缘体相关器件的应用开发. 本文回顾了普适电导涨落(UCF) 揭示拓扑绝缘体奇异输运性质的研究进展. 通过调控温度、角度、门电压、垂直磁场和平行磁场等外部参量, 实现了对拓扑绝缘体的UCF 效应的系统研究, 证实了拓扑绝缘体中二维UCF 的输运现象, 并通过尺寸标度规律获得了UCF 的拓扑起源的实验证据, 讨论了拓扑表面态的UCF 的统计对称规律. 从而实现了对拓扑绝缘体UCF 效应的较为完整的理解.     

拓扑量子材料光电探测器研究进展

物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破.由于存在不同于常规半导体的特殊拓扑量子态(如狄拉克费米子、外尔费米子、马约拉纳费米子等),拓扑量子材料通常能表现出一些新颖的物理特性(如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等),因而在低能耗电子器件和宽光谱光电探测器件领域具有重要...     

二维六角角晶体材料中的Dirac电子

本文综述由碳、硅、硼氮和二硫化钼等单元素或双元素构成的二维六角晶体材料中Dirac电子的研究成果与最新进展。文章从引言开始,接着介绍这些二维六角晶体材料的空间结构和基本电子性质;然后探讨外场调控下这些材料在能谱和光吸收、量子输运、激子凝聚和热Josephson效应,以及拓扑量子相变等方面所表现出来的新奇的物理现象、简要的理论处理和可能的应用前景;最后给出二维六角晶体材料相关研究的总结和展望。谨以本文献给南京大学建立物理学科100周年。     

层状磁性拓扑材料中的物理问题与实验进展

层状磁性材料与拓扑材料的交汇点同时结合了二者的优势,形成了在最小二维单元下同时具有磁序和拓扑性的材料体系,即层状磁性拓扑材料.这类材料的电子结构中可能存在狄拉克点、外尔点、节线等具有螺旋性或手性的拓扑电子态,同时涵盖了绝缘体、半金属和金属等的材料分类,导致新物性、新现象成为可能,因此引起了广泛的关注.本文主要以具有层状结构的本征磁性拓扑绝缘体、磁性外尔半金属、磁性狄拉克半金属等为例简要综述磁序与拓扑序之间的相互作用和近期部分的重要实验结果.此交叉材料领域方兴未艾,候选材料仍然非常缺乏,亟待进一步的开发和研究,是当前一个富有挑战的凝聚态物理前沿.     

拓扑材料中的超导

近来,人们在凝聚态体系中发现了由拓扑不变量定义的物相,其中最重要的有拓扑绝缘体、拓扑半金属和拓扑超导体等.这些物相的拓扑性质由非平凡的拓扑数描述,相应的材料被称为拓扑材料,具有诸多新奇的物理特性.其中拓扑超导体由于边界上有满足非阿贝尔统计的Majorana零能模,成为实现拓扑量子计算的主要候选材料.除了探索本征的拓扑超导体外,由于拓扑性质上的相似性,在不超导的拓扑材料中调制出超导自然成为了实现拓扑超导的重要手段.目前,人们发展了栅极调制、掺杂、高压、近邻效应调制和硬针尖点接触等多种技术,已经成功地在许多拓扑绝缘体和半金属中诱导出了超导,并对超导的拓扑性和Majorana零能模进行了研究.本文回顾了本征拓扑超导候选材料,以及拓扑绝缘体和半金属中诱导出超导的代表性工作,评述了不同实验手段的优势和缺陷、分析了其超导拓扑性的证据,并提出展望.     

二维六角晶体材料中的Dirac 电子

本文综述由碳、硅、硼氮和二硫化钼等单元素或双元素构成的二维六角晶体材料中Dirac 电 子的研究成果与最新进展。文章从引言开始,接着介绍这些二维六角晶体材料的空间结构和基本 电子性质;然后探讨外场调控下这些材料在能谱和光吸收、量子输运、激子凝聚和热Josephson 效 应,以及拓扑量子相变等方面所表现出来的新奇的物理现象、简要的理论处理和可能的应用前景; 最后给出二维六角晶体材料相关研究的总结和展望。谨以本文献给南京大学建立物理学科100 周 年。     

从磁性掺杂拓扑绝缘体到内禀磁性拓扑绝缘体——通往高温量子反常霍尔效应之路

量子反常霍尔效应被认为是已知的拓扑量子效应中最有希望获得广泛实际应用的一个。阻碍其应用的主要障碍是其很低的实现温度。文章介绍了在磁性拓扑绝缘体中量子反常霍尔效应的机理和决定其实现温度的因素,回顾了过去几年在提高量子反常霍尔效应实现温度方面的研究进展,尤其是最近内禀磁性拓扑绝缘体MnBi₂Te₄的相关工作。在此基础上提出在磁性拓扑绝缘体系统中进一步提高量子反常霍尔效应温度的路线图。

     

应变调控下Tl2Ta2O7中的拓扑相变

拓扑电子材料因为具有非平庸的拓扑态,所以会展现出许多奇异的物理性质.本文通过第一性原理计算对应变调控下的烧绿石三元氧化物Tl₂Ta₂O₇中的拓扑相变进行了研究.首先分析了原子轨道投影能带,发现体系费米能级附近O原子的(px+py)与pz轨道发生了能带反转,再构造了紧束缚模型计算得到体系的Z₂拓扑不变量确定了其拓扑非平庸性,最后研究了表面态等拓扑性质.研究发现未施加应变的Tl₂Ta₂O₇是一个在费米能级处具有二次能带交叉点的半金属,而平面内应变会破缺晶体对称性进而使体系发生拓扑相变.当对体系施加–1%的压缩应变时,它会转变为狄拉克半金属;当对体系施加1%的拉伸应变时,体系相变为拓扑绝缘体.本研究对于在三维材料中调控拓扑相变有着较重要的指导意义,并且为低能耗电子器件的设计提供了良好的材料平台.     

量子Berry相因子与相位教学

回顾了经典物理和量子力学中的相位问题,着重讨论了量子几何Berry相位及在量子力学中如何进行量子相位教学的问题.     

Topological phase transition in the trirutile-type MgBi2O6

Based on the first-principle calculations and k⋅p effective model analysis, we predicted a new topological semimetal (TSM) MgBi₂O₆. Without spin-orbit-coupling (SOC) and under the generalized-gradient-approximation (GGA), MgBi₂O₆ is a nodal-line semimetal. When the exchange-correlation energy was changed to HSE06, MgBi₂O₆ was trivial insulator in the equilibrium volume, but it became TSM under 7% hydrostatic tensile strain. MgBi₂O₆ might be an important platform to study the topological properties because of the two following advantages for measurements: (1) The nodal line, drumhead-liked surface state and Fermi Arc are very closely to the Fermi level; (2) The band structure is very “clean” (no other bulk bands except the related inverted conduction and valence bands around the Fermi level), which avoids the surface states been embedded into the bulk states.     

拓扑声子与声子霍尔效应

拓扑学与物理的结合是近几十年物理学蓬勃发展的一个新领域,它不仅活跃在量子场理论以及高能物理中,更广泛地存在于凝聚态物理体系中,包括量子(反常、自旋)霍尔效应和拓扑绝缘体(超导体)等.声子是凝聚态体系中热输运的主要载体;最近由于各种声子器件的发现,声子学得到了广泛的关注.本文介绍了声子的拓扑性质以及声子的霍尔效应现象,分别评述了在破坏时间反演对称、破坏空间反演对称、以及同时破坏时间和空间反演对称三种情况下所产生的声子霍尔效应、声子谷霍尔效应等相关物理研究进展.最后对拓扑学在其他声学体系中的应用做了简单介绍,并进一步讨论了其未来的发展方向.     

Gauge potential formulations of the spin Hall effect in graphene

Two different gauge potential methods are engaged to calculate explicitly the spin Hall conductivity in graphene. The graphene Hamiltonian with spin-orbit interaction is expressed in terms of kinematic momenta by introducing a gauge potential. A formulation of the spin Hall conductivity is established by requiring that the time evolution of this kinematic momentum vector vanishes. We then calculated the conductivity employing the Berry gauge fields. We show that both of the gauge fields can be deduced from the pure gauge field arising from the Foldy-Wouthuysen transformations.     

Topological states in quasicrystals

With the rapid development of topological states in crystals, the study of topological states has been extended to quasicrystals in recent years. In this review, we summarize the recent progress of topological states in quasicrystals, particularly focusing on one-dimensional (1D) and 2D systems. We first give a brief introduction to quasicrystalline structures. Then, we discuss topological phases in 1D quasicrystals where the topological nature is attributed to the synthetic dimensions associated with the quasiperiodic order of quasicrystals. We further present the generalization of various types of crystalline topological states to 2D quasicrystals, where real-space expressions of corresponding topological invariants are introduced due to the lack of translational symmetry in quasicrystals. Finally, since quasicrystals possess forbidden symmetries in crystals such as five-fold and eight-fold rotation, we provide an overview of unique quasicrystalline symmetry-protected topological states without crystalline counterpart.     

Optical tuning of Berry phase effect in topological insulators

We theoretically discuss the influence of driving laser field on the topological nature, one of the manifestation of the electron Berry phase effect, in two-dimensional electronic systems. Adiabatic change of the laser amplitude with circular polarization alters the “order parameter”, termed the Chern number, in topological insulator with broken time-reversal symmetry, resulting in photo-induced phase transition. The finding is an optical analog of the integer quantum Hall effect, that is triggered by the laser field instead of magnetic field. This parallelism suggests the similarity of effects to electron dynamics between circularly polarized light and magnetic field.     

Topological transport in Dirac electronic systems:A concise review

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological phases. In this topical review, transport properties of topological insulator(Bi2Se3), topological Dirac semimetal(Cd3As2), and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems,including topological edge transport, topological valley transport, and topological Weyl semimetals, are provided.