Nuclear spin relaxation rates in two-Leg spin ladders

Using the transfer-matrix density-matrix renormalization group method, we study the nuclear spin relaxation rate 1/T(1) in the two-leg s = 1 / 2 ladder as a function of the interchain (J( perpendicular)) and intrachain (J( parallel)) couplings. In particular, we separate the q(y) = 0 and pi contributions and show that the latter contribute significantly to the copper relaxation rate (63)(1/T(1)) in the experimentally relevant coupling and temperature range. We compare our results to both theoretical predictions and experimental measures on ladder materials.     

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B=0 and B=2 T shows a 20% decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin-orbit effective fields in the in-plane and out-of-plane directions and discuss the role of the Elliott-Yafet and Dyakonov-Perel mechanisms for spin relaxation.     

Muon spin relaxation in ferromagneticPdMn

Positive-muon ( ⁺) spin relaxation experiments have been carried out in the dilute ferromagnetic alloy Pd+2 at.% Mn (T _c=5.8 K). In the paramagnetic state the inhomogeneous ⁺ linewidth is proportional to the bulk magnetization. BelowT _c the ⁺ linewidth and the width of the ⁺ local field distribution in zero applied field are both in qualitative accord with the Sherrington-Kirkpatrick theory of disordered magnets.This work was performed under the auspices of the U.S. Department of Energy, and was supported by the U.S. National Science foundation, grant nos. DMR-7909223 and DMR-8115543, and by the Netherlands Stichting voor Fundamenteel Onderzoek der Materie (FOM).     

Positron spin relaxation in naphthalene

Summary The remaining spin polarizationP of positrons was measured in naphthalene against longitudinal magnetic-field strength. The measuring method was based on the relative yield of Ps in triplet and singlet state. In a zero fieldP is reduced to 50% of the initial polarization and approaches 100% upon increasing the applied field to larger values. This effect, which in teflon is quite absent, appears to be determined by the specific behaviour of positrons in naphthalene. This work was supported by CISM (Centro Interuniversitario di Struttura della Materia) of Ministero Pubblica Istruzione and by GNSM (Gruppo Nazionale di Struttura della Materia) of CNR.     

Low-temperature relaxation in spin glasses

We analyze the mechanism governing the long-time, low-temperature relaxation of the thermoremanent magnetization (σ_TRM) in metallic spin glasses. Ideas of quantum tunneling and “screening” of the local magnetic moments are employed to explain the existence of a hierarchy of relaxation times. This results in a time decay which is described by anenhanced power law: $$\sigma _{TRM} = \sigma _0 \exp - A[\ln (\omega t)]^y = \sigma _0 (\omega t)^{ - A[\ln (\omega t)]y - 1} $$ withy≧1. A crossover is predicted below which most parameters become temperature-independent.     

Positron spin relaxation in solids

Summary The positron spin relaxation in a longitudinal magnetic field was investigated in some solids where Ps formation occurs. The experimental results indicate that this relaxation manifests itself in those organic compounds where the positron can excite low-lying triplet states. The values of positron slowing-down time, obtained by adopting a schematic model, range from 13 to 28 ps. This work was supported by CISM (Centro Interuniversitario di Struttura della Materia) of Ministero della Pubblica Istruzione, and by GNSM (Gruppo Nazionale di Struttura della Materia) of CNR.     

Nuclear spin relaxation in disordered conductors

The relaxation timesT ₁ andT ₂ for nuclear spins interacting with the conduction electrons of disordered metals are calculated. An explicite expression for Warren's relaxation enhancement in terms of electron spectra is obtained, showing in particular that the proportionality ofT ₁ and the conductivity is a universal feature of high resistivity conductors. A formula for an inhomogeneous line width contribution due to disorder induced static Knight shift fluctuations is found. Two dimensional electron spin diffusion is shown to imply various logarithmic line width corrections.     

Nuclear spin relaxation in CoAl system

The temperature and magnetic field dependence of the nuclear spin relaxation rate $\text{1}\text{T}{}_1$ for ²⁷Al in CoAl has been investigated in the vicinity of exact stoichiometry. The experimental results are interpreted well in terms of the Benoit, de Gennes and Silhoutte (BGS) mechanism which involves a mutual flip of a nuclear spin and a localized electro spin on an excess Co atom via the Rudermann, Kittel, Kasuya and Yosida (RKKY) interaction, as well as the Korringa mechanism. The dynamic behavior of the localized moments thus obtained is discussed in terms of the Kondo effect.     

μ+ spin relaxation in ferromagnets

We review the recent theoretical studies of the muon spin relaxation mechanisms in metallic ferromagnets.     

Proton spin relaxation in hexagonal ice

Measurements of the rotating frame proton spin relaxation timeT _1p in hexagonal ice single crystals as a function of temperature ? for various rotating magnetic field strengths reveal the expectedT _1p minimum at the lowest practicable field values. This allows a very precise determination of the proton correlation (? molecular jump) time τ_c and the related activation energy ΔE by means of the theoretical reasoning of relaxation spectroscopy. We find the Arrhenius-law temperature dependenceτ _c=1.99×10^?17exp(0.603/8.61×10^?5 ?)sec, which is in good agreement with our earlier indirect derivation.     

Critical spin relaxation in GdCl3

In the critical region of the insulating, uniaxial ferromagnet GdCl₃ the real part of the uniform susceptibility χ(q = 0, ω; T) has been measured by means of a frequency counting method in the ranges $\text{1.7 MHz ?}\text{ω}\text{2π}\text{? 720 MHz, 0.003 ? (}\text{T}\text{T}{}_{\mathrm{c}}\text{? 1 ≡ ?) ? 0.5}$. Parallel to the easy direction at all temperatures, χ′(ω) has a lorentzian shape, its amplitude being equal to the static susceptibility, χ_T. The half-widths τ^?1 exhibit s critical slowing down: above ?_c = 0.03 they are proportional to χ^?1_T, while at ?_c a change-over to $\text{τ}{}^{\mathrm{?1}}\text{∝ χ}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>2</mtext>}}{}_{\mathrm{T}}$ occurs, the origin of which is uncertain.     

Muon spin relaxation in spin gap state of BaVS3

Positive muon spin relaxation measurements were performed on a spin-1/2 system BaVS₃, which shows a metal-insulator transition at T_MI= 70 K. We found a marked muon-spin depolarization below T_X= 30 K without appreciable critical divergence. The possibility of muonium formation in the insulating state rather than electron spin freezing is discussed taking into account the quenching of V spins evidenced by ⁵¹V NMR and NQR measurements. This revised version was published online in August 2006 with corrections to the Cover Date.     

半导体量子阱中电子自旋弛豫和动量弛豫

根据电子自旋轨道耦合对自旋极化弛豫影响的DP机理进一步导出了半导体中电子自旋弛豫与动量弛豫及载流子浓度的关系，并采用飞秒抽运探测技术在室温下测量AlGaAs/GaAs 多量子阱中载流子浓度在 1×10¹⁷—1×10¹⁸cm^-3范围内，电子自旋弛豫时间由58ps增加至82 ps的变化情况，与理论计算值符合，说明了随着载流子浓度的增加，载流子间的频繁散射加速了电子动量驰豫，减弱了电子自旋轨道耦合作用，从而延长了电子自旋寿命. 关键词： 电子自旋轨道耦合 电子自旋弛豫和动量弛豫 飞秒光谱技术     

129Xe-Xe molecular spin relaxation

We identify the formation of bound 129Xe-Xe molecules as the primary fundamental spin-relaxation process at densities below 14 amagat. Low pressure Xe relaxation rate measurements as a function of gas composition show that Xe-Xe molecular relaxation contributes 1/T1 = 1/4.1 h to the total observed relaxation rate. The measured rate is consistent with theoretical estimates deduced from previously measured NMR chemical shifts. At atmospheric pressure the molecular relaxation is more than an order of magnitude stronger than binary relaxation. Confusion of molecular and wall relaxation mechanisms has historically caused wall relaxation rates to be overestimated.     

Zero-field muon spin relaxation reflecting dynamics of spin glass

The muon spin relaxation function is calculated in a fluctuating random dilute spin system, and the effect of Edwards—Anderson's order parameter is considered in a time-dependent treatment. The results demonstrate the unique capability of zero-field μSR probing spin glasses.     

Zero field muon spin relaxation in simple magnets and spin glasses

A theory is developed for the calculation of zero field muon spin relaxation function for classical simple magnets (Ising, XY, and Heisenberg) in D(=1,2,3) dimensions. The results are different from the Kubo-Toyabe theory, except for Heisenberg system in three dimension. Relation between the relaxation function and random field distribution is dicussed and a new method of analysing experimental data is suggested and discussed in the context of spin glasses.     

Anisotropy of spin splitting and spin relaxation in lateral quantum dots

Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B ||[100] than for B || [110].