Ferromagnetic resonance and magnetic microstructure in nanocomposite films of Cox(SiO2)1 ? x and (CoFeB)x(SiO2)1 ? x

This paper reports on the results of the investigation of the relation between the magnetic microstructure and ferromagnetic resonance (FMR) in ferromagnetic metal-insulator composites by using granular alloys (Co₄₁Fe₃₉B₂₀) _x (SiO₂)_{1 − x} and Co _x (SiO₂)_{1 − x} as an example. A comparative analysis of the properties of FMR spectra and parameters of random magnetic anisotropy leads to correlations between these quantities. It has been found that the main mechanism that determines the FMR line width in the films under investigation is the exchange narrowing mechanism.     

Tuning X/(TiO2)x–(SiO2)100 – x (0 < x < 40) xerogel photocatalysts

Microporous (TiO₂) _x –(SiO₂)_{100 − x} (0 < x < 40) xerogels have been produced by sol–gel methods either by partial pre-hydrolysis or reflux of tetraethoxysilane and titanium isopropoxide. These have been characterised by ²⁹Si nuclear magnetic resonance, X-ray diffraction, EXAFS at the Ti–K edge, X-ray photoelectron spectroscopy, temperature-programmed reduction, FT infrared, N₂ adsorption at 78 K (BET), transmission electron microscopy and dynamic light scattering (DLS). These were dip coated onto fused silica and characterised by atomic force microscopy and UV–visible absorption. Their photoactivity in removal of alkylphenol ethoxylate TX100 from water was less than for less porous titania. The advantages of including thermally removable PEG or PPG templates in terms of increasing surface, meso-porosity and photon absorbance at visible wavelengths to give nanoengineered photocatalytic films are described.     

Magnetic anisotropy and magnetoelectric properties of Tb1 ? xErxFe3(BO3)4 ferroborates

Magnetic and magnetoelectric properties of ferroborate single crystals with complex composition (Tb_{1 − x} Er _x Fe₃(BO₃)₄, x = 0, 0.75) and with competing exchange Tb-Fe and Er-Fe interactions are investigated. Jumps in electric polarization, magnetostriction, and magnetization are observed as a result of spin-flop transitions, as well as a considerable decrease in the critical field upon an increase in the Er concentration, in a field H _c parallel to the c axis. The observed behavior of phase-transition fields is analyzed and explained using a simple model taking into account anisotropy in g factors and exchange splitting of funda-mental doublets of the easy-axis Tb³⁺ ion and easy-plane Er³⁺ ion. It is established that magnetoelectric and magnetostriction anomalies under spin-flop transitions are mainly controlled by the Tb subsystem. The Tb subsystem makes a nonmonotonic contribution ΔP _a (H _a , T) to polarization along the a axis: the value of ΔP _a reverses its sign and increases with temperature due to the contribution from the excited states of the Tb³⁺ ion. Original Russian Text ? A.K. Zvezdin, A.M. Kadomtseva, Yu.F. Popov, G.P. Vorob’ev, A.P. Pyatakov, V.Yu. Ivanov, A.M. Kuz’menko, A.A. Mukhin, L.N. Bezmaternykh, I.A. Gudim, 2009, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 136, No. 1, pp. 80–86.     

Structural and electrical investigation of (Ag3AsS3)x(As2S3)1?x superionic glasses

Structural studies of (Ag₃AsS₃) _x (As₂S₃)_1−x chalcogenide superionic glasses in the compositional range x = 0.3–0.9 were performed by scanning electron microscopy. Temperature and compositional dependences of transmission coefficient, electrical conductivity, and activation energy were investigated     

Magnetic phase transitions in Nd1 ? xDyxFe3(BO3)4 ferroborates

The magnetic properties of ferroborate single crystals with substituted compositions Nd_{1 − x} Dy _x Fe₃(BO₃)₄ (x = 0.15, 0.25) with competing exchange Nd-Fe and Dy-Fe interactions are investigated. For each composition, we observed a spontaneous spin-reorientation transition from the easy-axis to the easy-plane state and step anomalies on the magnetization curves for the spin-flop transition induced by a magnetic field B | c. The measured parameters and effects are interpreted using a unified theoretical approach based on the molecular field approximation and on calculations performed in the crystal-field model for the rare-earth ion. The experimental temperature dependences of the initial magnetic susceptibility from T = 2 K to T = 300 K, anomalies on the magnetization curves for B | c in fields up to 1.8 T, and their evolution with temperature, as well as temperature and field dependences of magnetization in fields up to 9 T are described. In the interpretation of experimental data, the crystal-field parameters in trigonal symmetry for the rare-earth subsystem are determined, as well as the parameters of Nd-Fe and Dy-Fe exchange interactions.     

Ferromagnetic resonance, magnetic properties, and resistivity of (CoFeZr)x(Al2O3)1 ? x/Si multilayer nanostructures

Comparative investigations of static magnetic properties, magnetoresistance, and ferromagnetic resonance data of multilayer nanostructures consisting of CoFeZr-Al₂O₃ composite magnetic layers and amorphous silicon semiconductor spacers were performed in a layer thickness range below 5 nm. The influence of layer dimension parameters and chemical peculiarities of silicon on the inner structure and type of magnetic interactions in nanostructures with 35 and 46 at % magnetic phase composite layers is discussed.     

Profile of the refractive index distribution over the depth of (HfO2)x(Al2O3)1 ? x films

Capabilities of the method of laser null ellipsometry for the study of optical parameters of thin films of multicomponent alloys are demonstrated. Films of alloys (HfO₂) _x (Al₂O₃)_{1 − x} on single-crystal silicon are obtained by the chemical vapor deposition with the use of the following volatile compounds: hafnium dipivaloylmethanate (IV) and aluminum acetylacetonate (III). The selection of initial sets for their optical parameters is justified. The selected model is shown to correspond to experimental data. In films deposited from the mixture of precursors, the refractive index increases from a substrate to a film surface. Due to the separation of sources, films described by a single-layer model were deposited. This fact is indicative of the homogeneous distribution of components over the film thickness.     

Magnetic and band parameters of (3HgS)1–x(Al2S3)x (x = 0.5) crystals doped with manganese

Investigations of magnetic susceptibility (χ) of (3HgS)_1–x (Al₂S₃) _x (x = 0.5) crystals doped with manganese investigated by the Faraday method in the range of Т = 77–300 K and Н = 0.25–4 kOe demonstrate that peculiar magnetic properties can be due to the presence of clusters of the Mn–S–Mn–S type in these crystals. Based on the investigation of kinetic coefficients of the crystals performed for Т = 77–300 K and Н = 0.5–5 kOe, it is established that the crystals demonstrate conductivity of the n-type, and their electric conduction only very slightly depends on the temperature and shows a maximum, the Hall coefficient is independent of the temperature, while the temperature dependences of mobility exhibit a maximum. Using the concentration dependence of the effective electron mass at the Fermi level, the width of the forbidden band, the matrix element of interatomic interaction, and the effective mass on the conduction-band bottom are obtained. Based on investigations by optical methods, the presence of direct optical interband transitions in the crystals is established and the value of the optical forbidden band (at Т = 300 K) is determined.     

Optical properties of (In2Se3)1–x·(CuIn5Se8)x solid solutions

Single crystals of In₂Se₃ and CuIn₅Se₈ compounds and (In₂Se₃)_1–x·(CuIn₅Se₈)_x solid solutions have been grown from the melt using the Bridgman method and their composition and structure determined. It is shown that the crystals have n-type conductivity. Their transmission spectra were studied in the self-absorption edge region at 80 and 295 K. Based on the spectral measurements, the band gap width (E_g) was determined and the band gap concentration dependences were plotted. It is found that E_g varies with the x composition nonlinearly. Using the dielectric model of Van Vechten–Bergstresser and the Hill–Richardson pseudo potential model, E_g(x) was calculated theoretically.     

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge

(TiO₂) _x (Al₂O₃)_1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO₂)_0.8(Al₂O₃)_0.2 film annealed at 500°C is amorphous with sharp interface between (TiO₂)_0.8(Al₂O₃)_0.2 and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 ? for (TiO₂)_0.9(Al₂O₃)_0.1 gate dielectrics is achieved with a gate leakage current of 2.70×10⁻⁵ A/cm² at V _g=+1 V.     

Low-field magnetization of ludwigites Co3O2BO3 and Co3 ? xFexO2BO3 (x ≈ 0.14)

Ludwigite single crystals of compositions Co₃O₂BO₃ and Co_{3 − x} Fe _x O₂BO₃ (x ≈ 0.14) have been synthesized. The crystal structure is investigated at room temperature, and the magnetization is studied in the temperature range T = 4.2–100 K in magnetic fields of up to 600 Oe. The orthorhombic symmetry is revealed, and the unit cell parameters are determined. A number of features are established for the temperature dependence of the magnetization. In unsubstituted Co₃O₂BO₃, two magnetic transitions are found at T _C1 = 43 K and T _C2 = 15 K. At temperatures below 40 K, spin-glass state is revealed. Substitution of iron ions for cobalt ions leads to a noticeable shift in the magnetic transitions toward the high-temperature range: T _C1 = 83 K and T _C2 = 74 K. A ferromagnetic ordering of the P type is found in the Co_{3 − x} Fe _x O₂BO₃ (x ≈ 0.14) compound. Original Russian Text ? N.V. Kazak, N.B. Ivanova, V.V. Rudenko, A.D. Vasil’ev, D.A. Velikanov, S.G. Ovchinnikov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 5, pp. 916–919.     

Electrical and magnetic properties of [(CoFeZr)x(Al2O3)1 ? x/(α-SiH)]n multilayer structures

The concentration dependences of the electrical resistivity and complex permeability of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures and (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites have been studied. It has been established that introduction of a semiconductor interlayer into the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites substantially decreases the electrical resistivity of [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n multilayer structures. The concentration dependences of the real and imaginary parts of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures substantially differ from those of the (Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} composites. The real part of the complex permeability of the [“(Co₄₅Fe₄₅Zr₁₀) _x (Al₂O₃)_{100 − x} ”/“α-Si: H”] _n nanomultilayer structures follows the curve with a minimum near the percolation threshold of the composite, and the imaginary part smoothly decreases as the ferromagnetic phase concentration increases. The results obtained are explained by the increase in the bifurcation temperature due to the conduction electrons of the semiconductor interlayer, which favor magnetic ordering of ferromagnetic grains.     

Structure and magnetism of semiconductor crystals of the (Ga1 ? xMnx)2Se3 (x = 0?0.04) compounds

Neutron diffraction and magnetic measurements have been used to study the effect of doping with Mn³⁺ ions on the fine crystal structure of the Ga₂Se₃ monoclinic compound. It has been established that the structural state of the crystals is changed even at a relatively low doping level (x = 0.04). Arguments in favor of the fact that local Jahn-Teller distortions are responsible for the formation of the fine structure and magnetism in compounds of this class are presented.     

M?ssbauer study of compounds of Cu3 ? xFexSnS4 and Cu2Fe1 ?xZnxSnS4 systems

A M?ssbauer study of the structural and charge states of ⁵⁷Fe and ¹¹⁹Sn atoms in the compounds of Cu_{3 −x} Fe _x SnS₄ and Cu₂Fe_{1 − x} Zn _x SnS₄ systems was performed. It was shown that the iron atoms in the compounds of both systems were in the divalent and trivalent states occupying the tetrahedral positions of the structure. The character of the changes of the degree of covalency of the Fe²⁺-S, Fe³⁺-S and Sn⁴⁺-S bonds during the isomorphic substitution in the systems was established.     

Observation of spontaneous spin reorientation in Nd1 ? xDyxFe3(BO3)4 ferroborates with a competitive R-Fe exchange

The magnetic, magnetoelectric, and magnetoelastic properties of DyFe₃(BO₃)₄ single crystals and the Nd_0.75Dy_0.25Fe₃(BO₃)₄ substituted compound with the competitive Nd-Fe and Dy-Fe exchange interactions have been investigated in magnetic fields up to 210 kOe. It has been shown that the antiferromagnetic state in Nd_0.75Dy_0.25Fe₃(BO₃)₄ below the Néel temperature is easy-plane and a spontaneous spin-reorientation transition to a uniaxial state occurs near 25 K. Anomalies are observed in various physical characteristics in a spin-flop transition induced by the magnetic field along the trigonal axis. The H-T phase diagrams are constructed; they are in good agreement with a simple model taking into account the anisotropy of the exchange splitting and g factors of the ground doublets of the Dy³⁺ and Nd³⁺ ions. The features of the magnetoelectric effect in various magnetic phases have been studied. Spontaneous electric polarization has been revealed in the region of the existence of an easy-plane antiferromagnetic state in the substituted compound. A qualitative theoretical justification of the possibility of the appearance of the spontaneous spin-reorientation transition in the Nd_0.75Dy_0.25Fe₃(BO₃)₄ substituted compound is given. Original Russian Text ? Yu.F. Popov, A.M. Kadomtseva, G.P. Vorob’ev, A.A. Mukhin, V.Yu. Ivanov, A.M. Kuz’menko, A.S. Prokhorov, L.N. Bezmaternykh, V.L. Temerov, 2009, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 89, No. 7, pp. 405–411.     

M?ssbauer and X-ray studies of the structural phase transformations and suppression of polymorphism in La1 ? xSrxMn0.98Fe0.02O3 + δ (x = 0.05?0.30)

The specific features of the structural transformations in La_{1 − x} Sr _x Mn_0.98Fe_0.02O_{3 + δ} (x = 0.05−0.30) as functions of the Sr content have been investigated using M?ssbauer spectroscopy and X-ray diffraction. It has been shown that, when the Sr content is lower than 10%, three phases are formed: PnmaII, PnmaI, and R-3c. In the Sr concentration range from 10 to 20%, the PnmaI and R-3c phases are formed. At a strontium content of 20%, the rhombohedral phase is formed. When the strontium content increases to 30%, the presumably monoclinic (distorted cubic) phase is formed in addition to the rhombohedral phase. The specific features of the formation and suppression of the phases in the LaMn_0.98Fe_0.02O_{3 + δ} compound are compared with those observed in the strontium-doped La_{1 − x} Sr _x Mn_0.98Fe_0.02O_{3 + δ} compound. The general regularities of the structural transformations and substantial differences between them have been revealed.     

Ion-electron transfer in solid solutions Rb2 ? 2xFe2 ? xPxO4

The rubidium monoferrite RbFeO₂-based solid solutions with the composition Rb_{2 − 2x} Fe_{2 − x} P _x O₄ have been synthesized, and their crystal structure and the temperature and concentration dependences of the total and electron conductivities have been studied. The introduction of P⁵⁺ ions has been found to sharply decrease the electron conductivity that prevails in pure rubidium monoferrite and, at the same time, to increase the ionic conductivity. The latter becomes dominant as the phosphorus concentration increases. The maximum rubidium-cation conductivity of the materials under study is ∼3 × 10⁻² S/cm at 300°C and ∼3 × 10⁻¹ S/cm at 700°C. The results have been compared with the previously obtained data for similar solid solutions based on rubidium monogallate and monoaluminate.     

Perpendicular magnetic anisotropy in the Co50Pt50, Co50Pd50, and Co50Pt50 ? xPdx thin films

Films of the Co₅₀Pt₅₀, Co₅₀Pd₅₀, and Co₅₀Pt_{50 − x} Pd _x alloys (where x = 1–10 at %) have been prepared. The processes of atomic ordering and its influence on the perpendicular magnetic anisotropy and the coercive force in these films have been investigated. The dependence of the coercive force on the film thickness has been analyzed. It has been shown that thin films of ordered alloys become magnetically uniaxial with the easy axis normal to their plane and can be used for magnetic and thermomagnetic recording and storage of information.