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针对硅双极器件及其构成的双极集成电路有着如低剂量率辐照损伤增强效应等不同于其他类型电路的特殊的辐照响应问题, 分析了空间辐射电离总剂量环境及铝屏蔽作用, 双极晶体管及电路总剂量辐照损伤机理, 低剂量率辐照损伤增强效应、规律和电参数变化。通过选取几种典型的双极晶体管和电路进行地面辐照模拟试验和测试, 证明了双极器件及电路的关键参数受辐照影响较大, 特别是对低剂量率辐照损伤增强效应敏感, 低剂量率辐照损伤增强因子基本都大于1.5, 不同双极器件和电路的低剂量率辐照损伤增强效应有着明显的不同, 与器件类型、加工工艺(如氧化层厚度)等密切相关。 相似文献
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为了对双极器件在电离辐射环境下的损伤机理及加固技术进行深入的研究,对设计制作的不同工艺类型的栅控横向PNP双极晶体管进行了60Co-γ低剂量率辐照试验.结果表明:1)栅控双极晶体管的辐射特性具有很强的工艺相关性,钝化层的存在对于双极晶体管的辐射响应具有很大影响,有钝化层的器件在电离辐射环境中会产生更多的界面态,其抗辐射能力大大减弱;2)针对国产栅控横向PNP晶体管在低剂量率辐照时会发生峰值电流展宽效应,文中对展宽效应潜在机理进行了分析,并针对展宽效应提出了新的分离方法.这不但对设计抗辐射加固器件提供了依据,而且为进一步深入研究双极器件的低剂量率辐射损伤增强效应提供了强有力工具. 相似文献
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对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT), 在不同辐照剂量率下进行60Co γ射线的辐照效应与退火特性的研究. 测量结果表明, 两种辐照剂量率下, 随着辐照总剂量增加, 晶体管基极电流增大, 共发射极电流放大倍数降低, 且器件的辐照损伤、性能退化与辐照剂量率相关, 低剂量率下辐照损伤较高剂量率严重. 在经过与低剂量率辐照等时的退火后, 高剂量率下的辐照损伤仍较低剂量率下的损伤低, 即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS). 本文对相关的物理机理进行了探讨分析.
关键词:
锗硅异质结双极晶体管
低剂量率辐照损伤增强
辐照效应 相似文献
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针对典型n+-p-n-n+结构的双极晶体管,从器件内部电场强度、电流密度和温度分布变化的分析出发,研究了在强电磁脉冲(electromagnetic pulse,EMP)作用下其内在损伤过程与机理.研究表明,双极晶体管损伤部位在不同幅度的注入电压作用下是不同的,注入电压幅度较低时,发射区中心下方的集电区附近首先烧毁,而在高幅度注入电压作用下,由于基区-外延层-衬底构成的PIN结构发生击穿,导致靠近发射极一侧的基极边缘处首先发生烧毁.利用数据分析软件,对不同注入电
关键词:
双极晶体管
强电磁脉冲
器件损伤
损伤功率 相似文献
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选择了四种典型双极集成电路,在两种不同剂量率下,开展了不同温度的高温辐照加速实验,测量了典型双极集成电路的辐射敏感参数在不同高温辐照下的变化规律。实验结果表明:高温辐照能够给出空间低剂量率辐射损伤增强效应的保守估计,且存在最佳辐照温度,最佳辐照温度随总剂量的增加向低温区漂移,随剂量率的增大向高温区漂移,在相同剂量率和总剂量下,输入级为NPN晶体管的双极集成电路比输入级为PNP晶体管的最佳辐照温度低。 相似文献
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利用有源传输线模型与漂移-扩散模型的耦合计算模型,对在瞬态X射线辐照下电缆末端典型N+-p-n-N+结构的双极晶体管负载的毁伤效应与规律进行研究,通过分析双极晶体管内部晶格温度分布,判定是否处于毁伤状态,总结双极晶体管烧毁时间和烧毁所需能量与脉冲X射线脉冲宽度和注量之间的关系。结果表明:随着脉冲X射线脉宽增加,双极晶体管烧毁能量变化较小,烧毁时间逐渐增加;随着注量增加,烧毁时间逐渐降低,在5.86J/cm2以下时,烧毁所需能量基本相同,之后呈指数逐渐增加,并通过曲线拟合得到损伤规律的经验公式。 相似文献
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为研究油气管道数据采集与监视控制(SCADA)系统的电磁脉冲易损性和防护措施,搭建了具有数据采集、数据通信、远程控制等功能的典型油气管道SCADA模拟实验系统,进行了峰值场强最高为50kV/m的典型高功率电磁波形作用下的电磁脉冲效应试验。利用实验数据,对目前油气管道SCADA系统面临强电磁脉冲威胁的机理和规律进行了初步分析,发现电磁脉冲对油气管道SCADA系统具有一定程度的威胁,获得了效应现象和效应阈值结果。 相似文献
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Silicon photodetectors and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are frequently used devices for measuring ionizing radiation in health physics instrumentation. The Bipolar Junction Transistor (BJT) is not a typical device used as a detector for measuring some physical quantities in radiotherapy beams due to its loss of sensitivity to ionizing radiation, as a consequence of radiation damage in the silicon semiconductor substrate. Actually, the know-how of the BJT characteristic curves and its response to ionizing radiation leads us to suggest an alternative method to estimate the radiation dose value in breast cancer treatments. The BJT parameter to be evaluated before and after the irradiation procedure is the BJT amplification factor, also called DC gain β. In this work, the study was done using a BJT known as Darlington type, within an Alderson Rando anthropomorphic phantom. Darlington transistors have very high gain and this feature allowed that the BJT gain changes to be correlated with the dose of the radiation beam. The results indicate that this new method could be an alternative option to estimate the dose value in the phantom for measurements in breast cancer radiotherapy. 相似文献
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Guangbao Lu 《中国物理 B》2023,32(1):18506-018506
The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2 interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages. 相似文献
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对0.18 μm互补金属氧化物半导体(CMOS)工艺的N型金属氧化物半导体场效应晶体管(NMOSFET)及静态随机存储器(SRAM)开展了不同剂量率下的电离总剂量辐照试验研究. 结果表明: 在相同累积剂量, SRAM的低剂量率辐照损伤要略大于高剂量率辐照的损伤, 并且低剂量率辐照损伤要远大于高剂量率辐照加与低剂量率辐照时间相同的室温退火后的损伤. 虽然NMOSFET 低剂量率辐照损伤略小于高剂量率辐照损伤, 但室温退火后, 高剂量率辐照损伤同样要远小于低剂量率辐照损伤. 研究结果表明0.18 μm CMOS工艺器件的辐射损伤不是时间相关效应. 利用数值模拟的方法提出了解释CMOS器件剂量率效应的理论模型. 相似文献
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Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment 下载免费PDF全文
LUO Yin-Hong GONG Jian-Cheng ZHANG Feng-Qi GUO Hong-Xia YAO Zhi-Bin LI Yong-Hong GUO Ning 《中国物理C(英文版)》2006,30(1):79-83
The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by 60Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future. 相似文献
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《Heat Recovery Systems and CHP》1993,13(3):261-276
This work develops a method for the calculation of both the irreversibility produced during combustion and the working medium availability at the end of the expansion process in a high speed, direct injection (DI), naturally aspirated, four-stroke diesel engine, on which experiments were conducted at the authors' laboratory. The experimental data were processed for the determination of fuel reaction rates; the combustion irreversibility production rate was then computed from the fuel reaction rates via an analytical mathematical expression which was developed by the present research group, based on the combined resolution of the first and second laws of thermodynamics. This expression is coupled with standard first law calculations and then is integrated to give the accumulated combustion irreversibility, while the working medium availability variation is also computed throughout the engine closed cycle. These calculations are applied for a wide range of measured loads, injection timings and engine rotational speeds; they are also expanded in the direction of the intensity of the rate of heat transfer loss (to the engine cooling medium) for every combination of the experimentally determined engine variables. Therefore, apart from investigating the effect of various operating parameters on the availability balance, it is possible to evaluate the effect of the engine heat transfer reduction (limited cooled engine), from the second law analysis point of view, on the potential for efficiency improvements made by using the increased exhaust heat in recovery devices (e.g. the exhaust turbine or Rankine bottoming cycle compounding). With the present second law analysis, which forms the spearhead of this work, the exhaust gas availability offers more useful information than its enthalpy counterpart (first law analysis) for the operation of such compounding devices. The irreversibility calculation also provides useful information for the combustion loss, which cannot be isolated and evaluated at all by a first law analysis. 相似文献
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本文以~(60)Co为辐照源,针对3DG111型晶体管,利用半导体参数分析仪和深能级缺陷瞬态谱仪,研究高/低剂量率和有/无氢气浸泡条件下,电性能和深能级缺陷的演化规律.试验结果表明,与高剂量率辐照相比,低剂量率辐照条件下,3DG111型晶体管的电流增益退化更加严重,这说明该器件出现了明显的低剂量率增强效应;无论是高剂量率还是低剂量率辐照条件下,3DG111晶体管的辐射损伤缺陷均是氧化物正电荷和界面态陷阱,并且低剂量率条件下,缺陷能级较深;氢气浸泡后在高剂量率辐照条件下,与未进行氢气处理的器件相比,辐射损伤程度明显加剧,且与低剂量率辐照条件下器件的损伤程度相同,缺陷数量、种类及能级也相同.因此,氢气浸泡处理可以作为低剂量率辐射损伤增强效应加速评估方法的有效手段. 相似文献
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本文采用60 MeV Br离子、5 MeV质子和1 MeV电子等三种辐射源, 针对CC4013型互补金属氧化物半导体器件(complementary metal oxide semiconductor, CMOS)进行辐射损伤研究. 通过Geant4程序计算了该器件电离辐射吸收剂量与芯片厚度的关系, 经过计算, 在相同注量下, 60 MeV Br离子的电离吸收剂量最大, 1 MeV电子产生的电离吸收剂量最小. 应用Keithley4200-SCS半导体特性分析仪在原位条件下研究了CC4013器件电性能参数随辐射吸收剂量的变化关系. 测试结果表明, 相同电离辐射吸收剂量下, 1 MeV电子对CC4013器件的阈值电压参数影响最大, 5 MeV质子其次, 60 MeV Br离子的影响最弱.
关键词:
CMOS器件
高能带电粒子
电离辐射
辐射损伤 相似文献