Electrical conduction mechanism in Fe<Subscript>70</Subscript>Pd<Subscript>30</Subscript> catalyzed multi-walled carbon nanotubes

Carbon nanotubes (CNTs) are synthesized by the catalytic decomposition of acetylene using low pressure chemical vapour deposition method (LPCVD) at 800 °C and at a chamber pressure of 10 Torr over a supported catalyst film of Fe₇₀Pd₃₀. Morphology of these CNTs is studied using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and High Resolution Transmission Electron Microscopy (HRTEM). From HRTEM image of these multi-walled carbon nanotubes (MWNTs), it is clear that these MWNTs do not possess a co-axial cylindrical structure, but are composed of imperfect and broken graphite cylinders of different sizes. The average diameter and length of the nanotubes varies between 20–70 nm and 5–60 μm respectively. Electrical transport measurements of these MWNTs are studied over a temperature range of 298–4.2 K. The results have been interpreted in terms of variable-range hopping (VRH) over the entire temperature range of 298–4.2 K. Three-dimensional variable-range hopping (VRH) is suggested for the temperature range (298–125 K), while two-dimensional VRH is observed for the temperature range (125–4.2 K).     

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The electrical conduction mechanisms in various highly resistive GaN layers of Al _x Ga_1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal–insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln (ρ) is proportional to T ^−1/4 for the insulating sample and proportional to T ^−1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Structure and impedance spectroscopy of Pr1? x Sr x Fe0.8Co0.2O3? δ ( x =0.1, 0.2, 0.3) thin films grown by laser ablation

Polycrystalline samples of Pr_1−x Sr _x Fe_0.8Co_0.2 O_3−δ (x=0.1, 0.2, 0.3) (PSFC) were prepared by the combustion synthesis route at 1200°C. The structure of the polycrystalline powders was analysed with X-ray powder diffraction data. The X-ray diffraction (XRD) patterns were indexed as the orthoferrite similar to that of PrFeO₃ having a single-phase orthorhombic perovskite structure (Pbnm). Pr_1−x Sr _x Fe_0.8Co_0.2O_3−δ (x=0.1, 0.2, 0.3) films have been deposited on yttria-stabilized zirconia (YSZ) single-crystal substrates at 700°C by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell cathodes. The structure of the films was analysed by XRD, scanning electron microscopy (SEM) and atomic force microscopy (AFM). All films are polycrystalline with a marked texture and present pyramidal grains in the surface with different size distributions. Electrochemical impedance spectroscopy (EIS) measurements of PSFC/YSZ single crystal/PSFC test cells were conducted. The Pr_0.7Sr_0.3Fe_0.8Co_0.2O_3−δ film at 850°C presents a lower area specific resistance (ASR) value, 1.65 Ω cm², followed by the Pr_0.8Sr_0.2Fe_0.8Co_0.2O_3−δ (2.29 Ω cm² at 850°C) and the Pr_0.9Sr_0.1Fe_0.8Co_0.2O_3−δ films (5.45 Ω cm² at 850°C).     

Preparation and characterization of Fe3O4 magnetic composite microspheres covered by a P(MAH-co-MAA) copolymer

A magnetic core–shell-layered polymer microsphere (MPS) was successfully synthesized by a dispersion polymerization route, where the modified Fe₃O₄ nanoparticles (MFN) were used as a core, while poly(maleic anhydride-co-methacrylic acid) P(MAH-co-MAA) as a shell was covered on the surface of the Fe₃O₄ nanoparticles. Environmental scanning electron microscope (ESME) and transmission electron microscope (TEM) measurements indicate that the magnetic P(MAH-co-MAA)/Fe₃O₄ composite microspheres assume sphericity and have a novel core–shell-layered structure. The crystal particle sizes of the unimproved Fe₃O₄ and the MFN samples vary from 8 to 16 nm in diameter, and the average size is about 10.6 nm in diameter. The core–shell magnetic composite microspheres can be adjusted by changing the stirring speed. Since multiple Fe₃O₄ cores were coated with a proper percentage of P(MAH-co-MAA) copolymers, and therefore lower density was acquired for the MPS, which improved sedimentation and dispersion behavior. The saturated magnetization of pure Fe₃O₄ nanoparticles reaches 48.1 emu g⁻¹ and the value for composite nanoparticles was as high as 173.5 emu g⁻¹. The nanoparticles show strong superparamagnetic characteristics and can be expected to be used as a candidate for magnetism-controlled drug release.     

Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics

La_0.5Bi_0.5MnO₃ ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were identified in the temperature range from 125 to 350 K. The electron hopping between Mn³⁺ and Mn⁴⁺ was found to be the origin of the dielectric relaxation at low temperatures (125–200 K) with an activation energy of 0.18 eV. The high temperature (200–350 K) dielectric relaxation can be attributed to the conduction.     

Electrical and optical properties of thin film of amorphous silicon nanoparticles

Electrical and optical properties of thin film of amorphous silicon nanoparticles (a-Si) are studied. Thin film of silicon is synthesized on glass substrate under an ambient gas (Ar) atmosphere using physical vapour condensation system. We have employed Field Emission Scanning Electron Microscopy (FESEM), Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM) to study the morphology and microstructure of this film. It is observed that this silicon film contains almost spherical nanoparticles with size varying between 10 and 40 nm. The average surface roughness is about 140 nm as evident from the AFM image. X-ray diffraction analysis is also performed. The XRD spectrum does not show any significant peak which indicates the amorphous nature of the film. To understand the electrical transport phenomena, the temperature dependence of dc conductivity for this film is studied over a temperature range of (300-100 K). On the basis of temperature dependence of dc conductivity, it is suggested that the conduction takes place via variable range hopping (VRH). Three-dimensional Mott's variable range hopping (3D VRH) is applied to explain the conduction mechanism for the transport of charge carriers in this system. Various Mott's parameters such as density of states, degree of disorder, hopping distance, hopping energy are estimated. In optical properties, we have studied Fourier transform infra-red spectra and the photoluminescence of this amorphous silicon thin film. It is found that these amorphous silicon nanoparticles exhibits strong Si-O-Si stretching mode at 1060 cm⁻¹, which suggests that the large amount of oxygen is adsorbed on the surface of these a-Si nanoparticles. The photoluminescence observed from these amorphous silicon nanoparticles has been explained with the help of oxygen related surface state mechanism.     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

Electrical transport, magnetic properties of the half-metallic Fe3O4-based Schottky diode

Fe₃O₄ thin films were prepared successfully by using the rf-sputtering technique with Fe₂O₃ target. The inverse spinel structure of the film was determined by X-ray diffraction (XRD) and the single phase of the Fe₃O₄ was confirmed by the XPS measurements. The surface roughness increases with the increase of the partial pressure of hydrogen. A high saturated magnetic field, 5000 Oe, implies that there exist the antiphase boundaries (APBs) in the film. The higher coercive filed below T_V is ascribed to the lower symmetry of the monoclinic structure. The temperature dependence of resistance shows a very clear Verwey transition and it is implied that the electrical transport behavior follows the variable-range hopping (VRH) mechanism from 40 to 300 K. The current vs. voltage curves of Fe₃O₄/Si Schottky heterojunction exhibits good rectifying property. The ideality factor and Schottky barrier height were obtained from the fitting curves calculated by the standard thermionic emission/diffusion model.     

Nuclear orientation study of54Mn impurity in Pt100-x Fe x alloy

The low temperature nuclear orientation of⁵⁴Mn in Pt_99.95Fe_0.05, Pt_99.9Fe_0.1, Pt₉₉Fe₁ and Pt₈₈Fe₁₂ has been studied in the temperature range 12–50 mK and in the external magnetic field range 0–1.2 T. The strong temperature and external magnetic field dependence of the effective fieldB _eff on⁵⁴Mn has been observed even in the range where the host itself is magnetically saturated. This behaviour is interpreted by noncollinearity of the Mn magnetic moments with respect to the macroscopic magnetisation direction.     

Study of some co-precipitated manganite perovskite samples-doped iron

Polycrystalline La_0.70Sr_0.30Mn_1−yFe_yO₃ (0.05?y?0.07) samples are prepared by the co-precipitation method and have been studied. The substitution of Mn³⁺ by Fe³⁺ reduces the number of available hopping sites for the Mn e_g(↑) electron and suppresses the double exchange (DE), resulting in the reduction of the metal–semiconductor transition temperature (T_P) and the flux density saturation (B_s). Low-temperature resistivity (ρ) data (below T_P) well fit with the relation ρ(T)=ρ₀+ρ₂T², indicating the importance of grain/domain boundary effects and electron–electron scattering processes in the conduction of these materials. On the other hand, at high temperature (T_P<T<θ_D/2) conductivity data satisfy the variable range hopping (VRH) model. For T>θ_D/2 the small polaron hopping model is more appropriate than the VRH model.     

Unusual magnetic behaviour of Mn spin in magnetic PtFe alloys: Nuclear orientation study

The low temperature nuclear orientation of⁵⁴Mn in Pt₉₉Fe₁, Pt₉₉,₉Fe_0.1 and Pt₉₉,₉₅Fe_0.05 has been studied in the temperature rangé 5–60 mK and in the external magnetic field range 0–9 T. A considerable noncollinearity of Mn magnetic moments with respect to B_ext has been found even at rather high B_ext.     

Electrical resistivity behaviour of sodium substituted manganites: electron-phonon,electron-electron and electron-magnon interactions

The present paper focuses on a quantitative analysis of the metallic and semiconducting behaviour of electrical resistivity in perovskite manganites La_{1- x} Na _x MnO₃ (x = 0.1, 0.17). An effective interionic interaction potential (EIoIP) with the long-range Coulomb, van der Waals (vdW) interaction and short-range repulsive interaction up to second neighbour ions within the Hafemeister and Flygare approach was formulated to estimate the Debye and Einstein temperature and was found to be consistent with the available experimental data. For both doping concentration x = 0.1 and 0.17 the electron-phonon, electron-electron and electron-magnon interactions are effective to describe the resistivity behaviour for temperatures less than the metal-insulator transition (T _P ). For temperatures, T > T _P , the semiconducting nature is discussed with Mott's variable range hopping (VRH) model and small polaron conduction (SPC) model. The fitted density of states as revealed from VRH differs drastically from the experimental value and therefore means the VRH model is not a viable option for describing the resistivity behaviour in high temperature region, T > T _P . The SPC model consistently retraces the higher temperature resistivity behaviour (T > θ _D /2). The metallic and semiconducting resistivity behaviour of sodium substituted manganites are analysed, to our knowledge, for the first time highlighting the importance of electron-phonon, electron-electron, electron-magnon interactions and small polaron conduction.     

Electrical properties of a solid polymeric electrolyte of PVC–ZnO–LiClO4

The ZnO filler has been introduced into a solid polymeric electrolyte of polyvinyl chloride (PVC)–ZnO–LiClO₄, replacing costly organic filler for conductivity improvement. Ionic conductivity of PVC–ZnO–LiClO₄ as a function of ZnO concentration and temperature has been studied. The electrolyte samples were prepared by solution casting technique. The ionic conductivity was measured using impedance spectroscopy technique. It was observed that the conductivity of the electrolyte varies with ZnO concentration and temperature. The temperature dependence on the conductivity of electrolyte was modelled by Arrhenius and Vogel–Tammann–Fulcher equations, respectively. The temperature dependence on the conductivity does not fit in both models. The highest room temperature conductivity of the electrolyte of 3.7 × 10⁻⁷ Scm⁻¹ was obtained at 20% by weight of ZnO and that without ZnO filler was found to be 8.8 × 10⁻¹⁰ Scm⁻¹. The conductivity has been improved by 420 times when the ZnO filler was introduced into the PVC–LiClO₄ electrolyte system. It was also found that the glass transition temperature of the electrolyte PVC–ZnO–LiClO₄ is about the same as PVC–LiClO₄. The increase in conductivity of the electrolyte with the ZnO filler was explained in terms of its surface morphology.     

Multiwalled carbon nanotubes mass-produced by dc arc discharge in He–H2 gas mixture

Uniform cathode deposits (longer than 15 mm), containing multiwalled carbon nanotubes (MWNTs) inside, were produced by dc arc discharge evaporation with a computer-controlled feeder of a pure-carbon electrode without a metal catalyst in a He–H₂ gas mixture. The purification of MWNTs was carried out to remove amorphous carbon and carbon nanoparticles. High-resolution transmission electron microscopy observations and Raman scattering studies show that the MWNTs possess a high crystallinity and a mean outermost diameter of ∼ ∼10 nm. It has been confirmed that the current density in the electron field emission from a purified MWNT mat can reach 77.92 mA/cm², indicating that the purified MWNTs are a promising candidate electron source in a super high-luminance light-source tube or a miniature X-ray source.     

Magnetotransport and magnetocaloric effect in Ho<Subscript>2</Subscript>In

The magnetotransport and magnetic properties of the binary intermetallic compound Ho₂In have been investigated. Clear signature of long range ferromagnetic order in the resistivity and the magnetization data at T_C = 85 K is observed. A further spin reorientation type transition is also apparent in our measured data at around T_t = 32 K. The sample exhibits negative magnetoresistance (peak value of –14% at 5 T) over a wide temperature range that extends well above T_C. Substantially large magneto-caloric effect is also observed in the sample (maximum value of –8.5 J kg^-1K^-1 for 0 → 5 T), which peaks around the T_C of the sample. The observed magnetoresistance and magnetocaloric effect are related to the suppression of spin disorder by an external magnetic field. Ho₂In can be an interesting addition to the list of rare-earth based magnetic refrigerant materials showing magneto-caloric effect across a second order phase transition.     

Transport behavior and mechanism of conduction of simultaneously substituted Y and Fe in La0.7Ba0.3MnO3 perovskite

The electrical properties and the mechanism of conduction of the simultaneously substituted La_0.7−xY_xBa_0.3Mn_1−xFe_xO₃ perovskite (0≤x≤0.30) have been studied. The insertion of Y³⁺ and Fe³⁺ ions in the parent compound La_0.7Ba_0.3MnO₃ leads to an increase of the resistivity. The undoped sample (x=0) shows a metallic behavior, which can be fitted by the relation ρ(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of electron-magnon scattering effects in this material. All the other samples (x≥0.10) are semiconductors throughout the studied temperature range (80-290 K). Several models have been used to fit their temperature-dependent resistivity: thermal activation, adiabatic nearest-neighbor hopping of small polarons (Holstein theory) and variable range hopping (VRH) models. The fits show that the electronic transport in semiconducting La_0.7−xY_xBa_0.3Mn_1−xFe_xO₃ is well described and dominated by the VRH mechanism, for which the hopping distance (a) grows with increasing Fe³⁺ doping, thus increasing the average hopping energy W.     

Identification of a spin-glass and a cluster-glass by Mössbauer measurements: Fe0.5Mn0.5TiO3 and Fe0.2Mg0.8TiO3

Summary M?ssbauer measurements have been made on two kinds of spin-glass (SG) systems: one is the magnetically non-diluted mixed compound Fe_0.5Mn_0.5TiO₃ with the SG-freezing temperatureT _SG=21.5K, and the other is the diluted one Fe_0.2Mg_0.8TiO₃ withT _SG=6K. We have shown that the temperature variation of the M?ssbauer spectrum of Fe_0.2Mg_0.8TiO₃ above and around itsT _SG is essentially different from that of Fe_0.5Mn_0.5TiO₃: the former is typical of a cluster-glass and the latter of an ordinary spin-glass. The present work has clearly demonstrated that the M?ssbauer spectroscopy is the most useful and unique technique to distinguish a cluster-glass from an ordinary spin-glass. Paper presented at the ICAME-95, Rimini, 10–16 September 1995     

Conduction studies on electrodeposited indium selenide thin films

Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium trichloride (InCl₃) and selenium dioxide (SeO₂) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott’s variable-range hopping conductivity (VRH) is dominant under low field (∼2×10⁵ Vcm⁻¹) condition. At high field the Current-Voltage studies (in the temperature range 300 – 380 K) revealed that the conductivity of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (I/V) and tV showed a straight line and also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed in detail. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Sensitive detection of temperature behind reflected shock waves using wavelength modulation spectroscopy of CO2 near 2.7?μm

Tunable diode-laser absorption of CO₂ near 2.7 μm incorporating wavelength modulation spectroscopy with second-harmonic detection (WMS-2f) is used to provide a new sensor for sensitive and accurate measurement of the temperature behind reflected shock waves in a shock-tube. The temperature is inferred from the ratio of 2f signals for two selected absorption transitions, at 3633.08 and 3645.56 cm⁻¹, belonging to the ν ₁+ν ₃ combination vibrational band of CO₂ near 2.7 μm. The modulation depths of 0.078 and 0.063 cm⁻¹ are optimized for the target conditions of the shock-heated gases (P∼1–2 atm, T∼800–1600 K). The sensor is designed to achieve a high sensitivity to the temperature and a low sensitivity to cold boundary-layer effects and any changes in gas pressure or composition. The fixed-wavelength WMS-2f sensor is tested for temperature and CO₂ concentration measurements in a heated static cell (600–1200 K) and in non-reactive shock-tube experiments (900–1700 K) using CO₂–Ar mixtures. The relatively large CO₂ absorption strength near 2.7 μm and the use of a WMS-2f strategy minimizes noise and enables measurements with lower concentration, higher accuracy, better sensitivity and improved signal-to-noise ratio (SNR) relative to earlier work, using transitions in the 1.5 and 2.0 μm CO₂ combination bands. The standard deviation of the measured temperature histories behind reflected shock waves is less than 0.5%. The temperature sensor is also demonstrated in reactive shock-tube experiments of n-heptane oxidation. Seeding of relatively inert CO₂ in the initial fuel-oxidizer mixture is utilized to enable measurements of the pre-ignition temperature profiles. To our knowledge, this work represents the first application of wavelength modulation spectroscopy to this new class of diode lasers near 2.7 μm.