氮气流量对磁控溅射制备类金刚石薄膜性能的影响

采用磁控溅射法以石墨为靶材在玻璃衬底上沉积了类金刚石(DLC)薄膜,用原子力显微镜表征了不同氮气流量条件下生长薄膜的形貌,用拉曼光谱仪、X射线光电子能谱仪和分光光度计分析了样品的微结构、元素的价态和透光性能.结果表明:沉积的薄膜均为非晶结构.通入2sccm氮气时,薄膜的光学透过率大大提高,此时DLC薄膜内的氮元素含量为5.88%,sp3键百分比为64.65%,ID/IG值为1.81;掺氮DLC薄膜在可见光范围内光学透过率达到95.69%.随着氮气流量增加,DLC薄膜光学透过率呈现出下降的趋势.退火2h后不掺氮DLC薄膜光学透过率呈小幅度下降,而掺氮DLC薄膜的光学透过率几乎没有变化.     

不同氧气流量对直流磁控溅射TiO2薄膜的影响

采用直流反应磁控溅射法,以高纯Ti为靶材,高纯O2为反应气体,制备了TiO2薄膜.研究了氧气流量对薄膜结晶取向、表面形貌和光学性能的影响.研究发现,TiO2薄膜主要呈锐钛矿TiO2(101)择优取向,当氧气流量较小时,薄膜中还含有金属Ti(100),氧气流量较大时,薄膜含TiO2(101)和TiO2(004),成多晶态;薄膜的粗糙度和颗粒大小都随氧气流量的增大而增大;薄膜在400～1 100nm可见-近红外波段有较高的透射率并且其吸收峰随着氧气流量的增大而红移,当氧气流量为5sccm时,平均透射率最高.     

RF磁控溅射条件对ZnO薄膜结构的影响

采用RF磁控溅射法在Si（001）衬底上制备ZnO薄膜。研究发现了工作中溅射频率、氧气和氩气流量比对样品结构的影响。样品的XRD图谱显示了强的（002）ZnO衍射峰，表明ZnO薄膜为c轴高取向生长。比较不同条件下制备的ZnO薄膜，研究发现当氧气和氩气的流量比相同时，随着溅射功率的增加，样品的（002）衍射峰增强，半高全宽变小。而当溅射功率相同时，随着氧气和氩气的流量比增加，样品的（002）衍射峰也增强，半高全宽同样变小。此外，本文还分析了溅射工艺和薄膜晶体质量之间关系，发现在相同的功率条件下，溅射率低时晶粒尺寸更大且薄膜的结晶性更好。     

六方InN薄膜的载流子输运特性研究

关键词：     

氮气含量对硅基AlN薄膜结构及性能的影响

研究了直流磁控溅射法沉积AlN薄膜过程中氮气含量对AlN薄膜结构及性能的影响.实验结果表明:当真空腔的氩气含量较低时,薄膜呈非晶态,在红外波段的傅里叶变换光谱中没有明显的吸收峰,当氮气流量为75%时薄膜中出现明显的六方AlN(100)和AlN(110)衍射峰,在波数为670～700cm-1处有强烈的吸收峰;增加氮气含量,薄膜又呈现出非晶状态.薄膜的表面粗糙度和颗粒大小都随氮气含量的增加先增大后减小..     

InN薄膜的氧化特性研究

研究了InN薄膜在不同氧气氛中的氧化特性. 研究表明，在400 ℃以下，InN薄膜很难被氧化，而金属In很容易被氧化. 因此富In的InN薄膜的氧化在400 ℃以下主要是金属In的氧化，在400 ℃以上为金属In和InN的同时被氧化. 在400 ℃以上的氧化过程中，InN的表观氧化速率非常慢，这可能和InN的高温分解有关. InN的湿氧和干氧氧化结果说明湿氧氧化速率比干氧快. 关键词： InN 氧化铟 氧化 X射线衍射     

不同氧气流量对直流磁控溅射TiO2薄膜的影响

采用直流反应磁控溅射法,以高纯Ti为靶材,高纯O₂为反应气体,制备了TiO₂薄膜.研究了氧气流量对薄膜结晶取向、表面形貌和光学性能的影响.研究发现,TiO₂薄膜主要呈锐钛矿TiO₂(101)择优取向,当氧气流量较小时,薄膜中还含有金属Ti(100),氧气流量较大时,薄膜含TiO₂(101)和TiO₂(004),成多晶态;薄膜的粗糙度和颗粒大小都随氧气流量的增大而增大;薄膜在400~1100nm可见-近红外波段有较高的透射率并且其吸收峰随着氧气流量的增大而红移,当氧气流量为5sccm时,平均透射率最高.     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

射频磁控溅射法制备ZnO薄膜的发光特性

利用射频磁控溅射法在硅衬底上制备出具有（002）择优取向的氧化锌薄膜，用波长为300nm的光激发，观察到在446nm处有一强的光致发光峰，它来自于氧空位浅施主能级上的电子到价带上的跃迁。并讨论了发光峰与氧压的关系以及退火对它的影响，且给出了解释。     

靶压对磁控溅射GeC薄膜折射率的影响

采用磁控溅射技术,以碳氢气体和氩气为工作气体,在Ge基底上制备了GeC薄膜。研究了靶压对薄膜折射率的影响,发现在较高的靶压下制备的GeC薄膜具有较低的折射率,而在较低的靶压下则得到了高折射率的薄膜。通过控制溅射靶压,制备了折射率在2．5～3．8之间可变的GeC薄膜。利用拉曼光谱研究了GeC薄膜的结构。薄膜样品的硬度测试表明,较低折射率的GeC薄膜具有较高的硬度。     

Fabrication and structural characterization of metal films coated on cenosphere particles by magnetron sputtering deposition

Metal films were successfully coated on cenosphere particles using a magnetron sputtering deposition system in which a newly designed sample stage equipped with an ultrasonic vibration generator was used for the tumbling of cenosphere particles. It was found by FE-SEM and AFM results that the films were well compacted and highly uniform in thickness. Due to the difference in sputtering rate, the film thicknesses estimated from FE-SEM characterizations in backscattered mode were <10, 39, 50 and 134 nm for Co, Ni, Cu and Ag films, respectively, under the same sputtering deposition conditions. The RMS values derived from the AFM measurements were 1.94, 4.31, 10.92 and 18.33 nm for Co, Ni, Cu and Ag films, respectively, which can ascribe to the different crystallization behaviors for the four metals. The experiment results indicate that the coating method can be applicable for the fabrication of many other films on cenosphere particles which can be sputter deposited.     

Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.     

Optical and electrical properties of nanocrystal zinc oxide films prepared by dc magnetron sputtering at different sputtering pressures

The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The optical transmission spectra depend from the sputtering pressure, but their average value was 90% in the range from 33 Pa to 47 Pa. Also, the sputtering pressure changes the optical band gap of ZnO:Al films, which is highest for films deposited at 37 Pa, 40 Pa and 47 Pa. The obtained films at room temperature have a sheet resistance of 190 Ω/cm² which increases with time, but the films annealed at temperature of 400 °C have constant resistance. The surface morphology of the films was studied by Scanning electron microscopy. XPS spectra showed that the peak of O1s of the as-deposited films is smaller than the peak of the annealed ZnO:Al films.     

Direct current magnetron sputtering deposition of InN thin films

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N₂ (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.     

GaN films deposited by middle-frequency magnetron sputtering

GaN films were deposited on Si (111) substrates by middle-frequency magnetron sputtering. X-ray diffraction revealed preferential GaN (0 0 0 2) orientation normal to the substrate surface for all the films deposited. The diffraction intensity and N contents were found to depend strongly on the total gas pressure. Good quality films were only obtained at pressures in the range of 0.4-1.0 Pa. Little diffraction of GaN (0 0 0 2) could be observed either at total pressures below 0.4 Pa or above 1.0 Pa. The GaN films produced under the optimized conditions have an N:Ga ratio of 1:1 as determined by energy-dispersive X-ray spectroscopy.     

Growth, structural, and magnetic properties of iron nitride thin films deposited by dc magnetron sputtering

FeN thin films were deposited on glass substrates by dc magnetron sputtering at different Ar/N₂ discharges. The composition, structure and the surface morphology of the films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Films deposited at different nitrogen pressures exhibited different structures with different nitrogen contents, and the surface roughness depended on the mechanism of the film growth. Saturation magnetization and coercivity of all films were determined using superconducting quantum interference device, which showed that if N₂/(Ar+N₂) flow ratio was equal to or larger than 30% the nonmagnetic single-phase γ″-FeN appeared. If N₂/(Ar+N₂) flow ratio was less than 10%, the films consisted of the mixed phases of FeN_0.056 and γ′-Fe₁₆N₂, whose saturation magnetizations were larger than that of -Fe. If N₂/(Ar+N₂) flow ratio was 10%, the phases of γ′-Fe₄N and -Fe₃N appeared, whose saturation magnetizations were lower than that of -Fe.     

负偏压对磁控溅射Ti膜沉积速率和表面形貌的影响

 采用直流磁控溅射加负偏压的方法制备了Ti膜,研究了不同偏压条件对Ti膜沉积速率、密度、生长方式及表面形貌的影响。随着偏压逐渐增大,Ti膜沉积速率分三个阶段变化:0~ -40 V之间沉积速率基本不变; -40~ -80 V之间沉积速率迅速降低;超过-80 V后沉积速率随偏压的下降速度又放缓。Ti膜密度随偏压增加而增大,负偏压为-119.1 V时开始饱和并趋于块体Ti材密度。加负偏压能够抑制Ti膜的柱状生长方式;偏压可以改善Ti膜的表面形貌,对于40 W和100 W的溅射功率,负偏压分别在-100 V和-80 V左右时制备出表面光洁性能较佳的Ti膜。     

The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

Boron carbide (B₄C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B₄C multilayer was improved so much.     

Microstructure, optical and electrical properties of nitrogen doped sp-rich a-C thin films grown by facing-target magnetron sputtering

N atoms were incorporated into sp²-rich a-C networks using DC facing-target reactive sputtering at various N₂ fraction (P_N2) and their structure and opto-electrical properties were investigated systematically. As P_N2 increases, the fraction of CN bonded carbons (or the N content) increases primarily at the expense of the CC bonded carbons and then reaches its saturated value at P_N2 > 40%. The incorporated N preferentially forms different kinds of non-aromatic CN phase, leading to more localization of π electrons and the loss of the connectivity of nanographite fragments in the films, which is different from the case in N-doped sp³-rich a-CN_x films. Hence, with increasing P_N2, the a-C(:N) film converts from a semiconductor with a narrower optical band gap to an insulator-like material with a wider gap. Additionally, the variation of optical constants (n and k) and spin defects are related to the enhancement of the non-aromatic CN phase.     

Bioactive glass thin films deposited by magnetron sputtering technique: The role of working pressure

Bioglass coatings were prepared by radio frequency magnetron sputtering deposition at low temperature (150 °C) onto silicon substrates. The influence of argon pressure values used during deposition (0.2 Pa, 0.3 Pa and 0.4 Pa) on the short-range structure and biomineralization potential of the bioglass coatings was studied. The biomineralization capability was evaluated after 30 days of immersion in simulated body fluid. SEM-EDS, XRD and FTIR measurements were performed. The tests clearly showed strong biomineralization features for the bioglass films. The thickness of the chemically grown hydroxyapatite layers was more than twice greater for the BG films deposited at the highest working pressure, in comparison to those grown on the films obtained at lower working pressures. The paper attempts to explain this experimental fact based on structural and compositional considerations.