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1.
The resistance varies as T2 over the range of T from Tc to nearly 40 K, in sintered, sputtered and evaporated thin film CuxMo6S8, and in sputtered PbMo6S8 films. In sintered PbMo6S8 the resistance varies as T. These results can neither be explained by existing theory for PbMo6S8, nor by a Mo2S3 phase argument.  相似文献   

2.
With respect to single crystals of Nb3S4 the electrical resistivity from 2.8 K to 300 K and the magnetoresistance at 4.2 K were measured. The resistivity is represented as a sum of a temperature independent and an intrinsic temperature dependent component. The temperature dependence of the intrinsic resistivity subjects to T3 form between 7 and 50 K above which it becomes weaker than T3 approaching a T linear from. This behaviour is discussed in terms of the electron-electron Umklapp scattering. The ratio of the resistivities perpendicular and parallel to the c-axis takes about 15 between room temperature and 50 K. The transverse magnetoresistance is proportional to the magnetic field. The longitudinal magnetoresistance is too small to be measured.  相似文献   

3.
A giant magnetoresistance, reaching 74% in a magnetic field of 38 T at 3 K, was observed in the CuCr1.6Sb0.4S4 semiconductor spinel. The magnetic properties point to the existence of a magnetic two-phase state in this compound. The giant magnetoresistance was explained by the existence of the magnetic two-phase state due to strong s-d exchange.  相似文献   

4.
Cr-based chalcogenide spinels, which do not have heterovalency and distortion-induced ions such as manganese oxides with perovskite structure, have demonstrated the existence of colossal magnetoresistance. In order to investigate the magnetotransport phenomena and magnetic properties of sulfospinels Zn x Fe1?x Cr2S4, polycrystalline Zn x Fe1?x Cr2S4 samples were synthesized in the 0?≤?x?≤?0.2 range by a solid reaction method. The crystal structure for x?=?0.05, 0.1, and 0.2 turned out to be cubic at room temperature by X-ray diffraction measurement. In magnetoresistance measurement, Zn x Fe1?x Cr2S4 samples indicate that this system is semiconducting below about 150 K. The temperature of maximum magnetoresistance is almost consistent with Curie temperature. The isomer shift and the electric quadrupole shift of Zn x Fe1?x Cr2S4 samples by Mössbauer experiment show that Fe2+ ions occupy the tetrahedral site in the spinel structure. As the Zn ions are substituted for Fe ions, the Jahn–Teller relaxation slows down and the electric quadrupole shift increases. The magnetotransport phenomena of Zn x Fe1?x Cr2S4 is related to Jahn–Teller effect and half-metallic electronic structure, which are different from the double exchange interactions of the manganite La–Ca–Mn–O system or the triple exchange interactions of sulfospinel Cu x Fe1?x Cr2S4.  相似文献   

5.
High-resolution powder neutron diffraction data reveal that, at temperatures below 100 K, oxygen-free, high-Tc samples of PbMo6S8 and SnMo6S8 exhibit a small structural distortion from the R3 rhombohedral space group. The data cannot be refined in a simple P1 triclinic space group as previously reported for EuMo6S8 and BaMo6S8. Thus, a supercell ordering is suggested.  相似文献   

6.
The galvanomagnetic properties of p-type bismuth telluride heteroepitaxial films grown by the hot wall epitaxy method on oriented muscovite mica substrates have been investigated. Quantum oscillations of the magnetoresistance associated with surface electronic states in three-dimensional topological insulators have been studied in strong magnetic fields ranging from 6 to 14 T at low temperatures. The cyclotron effective mass, charge carrier mobility, and parameters of the Fermi surface have been determined based on the results of analyzing the magnetoresistance oscillations. The dependences of the cross-sectional area of the Fermi surface S(k F), the wave vector k F, and the surface concentration of charge carriers n s on the frequency of magnetoresistance oscillations in p-type Bi2Te3 heteroepitaxial films have been obtained. The experimentally observed shift of the Landau level index is consistent with the value of the Berry phase, which is characteristic of topological surface states of Dirac fermions in the films. The properties of topological surface states of charge carriers in p-type Bi2Te3 films obtained by analyzing the magnetoresistance oscillations significantly expand fields of practical application and stimulate the investigation of transport properties of chalcogenide films.  相似文献   

7.
The results of investigations of the magnetic and Raman spectra, magnetic properties, and magnetoresistance of vanadium-substituted chromium copper disulfides CuV x Cr1 ? x S2 (x = 0.1) are presented.  相似文献   

8.
New substances CuVxCr1?x S2 are synthesized in which colossal magnetoresistance (T C = 95 K, δH = ?60%, H = 7 kOe), as well as the sequence of phase transitions with change in the conduction type and magnetic order, is observed as temperature is varied. The change found in the magnetic and electric properties of the CuVxCr1?x S2 compounds may be a consequence of a specific disintegration into Cu+Cr3+S2 and Cu2+Cr2+S2 and a change in the concentration relation between these electronic phases in the substance bulk.  相似文献   

9.
Group IIIa metals and Nb, Hg and Pb containing AxMo6S8 Chevrel phases have been synthesized by low temperature reaction (420–430°C) frorn A metal and Mo6S8. Some of these phases are hitherto unknown. Electrolysis method of preparation of AxMo6S8 reported by Schöllhorn does not yield the desired phases when A = Pb or Ag. Stoichiometry, thermal stability, electrical and superconducting properties of the compounds have been examined. In the PbxMo6S8 system, a series of phases with varying x have been prepared and studied. Group IIIa metal and Nb-compounds are found to be semiconductors with low energies of activation exhibiting p-type behavior in the range 77–300 K. Hg-phase behaves as a metal or a degenerate semiconductor and does not become superconducting above 4.2 K. X-Ray, resistivity and Tc studies show that for x ? 0.8 in PbxMo6S8, the compounds behave more like Mo6S8 and only for x ? 1.0 or (PbBi)1.0, the inherent behavior of the ternary Chevrel phase is exhibited. Seebeck coefficients are small and positive for Mo6S8, Cu and Pb-containing phases in the range 77–300 K. The results are discussed in the light of available band structure of these materials.  相似文献   

10.
Electron tunneling spectroscopy has been applied for the investigation of Cu1.8Mo6S8, PbMo6.35S8 and LaMo6S8 d.c. getter-sputtered thin films. Cryogenically deposited Al2O3 as the artificial barrier with Al counter-electrode formed the tunnel junctions. The energy gap Δ0 and the ratio 2Δ0/kBTc were determined from the differential conductance dJ/dV vs. voltage V. Preliminary measurements showed phonon structure in LaMo6S8 films.  相似文献   

11.
The low temperature structural phase transition occuring in EuMo6S8 was also detected, by specific heat measurements, in bulk samples of M Mo6S8 with M=Ba, Sr and Ca. Sintered material of EuMo6S8 equally transforms, but in a broad temperature interval. The triclinically distorted phases are characterized by a very low electronic densities of states.  相似文献   

12.
The Hall effect and the magnetoresistance of ferromagnetic Heusler alloys Co2 YAl, where Y = Ti, V, Cr, Mn, Fe, and Ni have been studied at T = 4.2 K in magnetic fields H ≤ 100 kOe. Normal R 0 and anomalous R S Hall coefficients are shown to be maximal in magnitudes in the middle of the 3d period of the periodic table of elements. Coefficient R 0 changes the negative sign to positive sign in going from weak (Y = Ti, V) to strong (Y = Cr, Mn, Fe, and Ni) ferromagnetic alloys. Constant R S is positive and proportional to ρ2.9 in all the alloys. The magnetoresistance of the alloys is not higher than several percent and its magnitude is changed fairly significantly in the dependence on the number of valence electrons z; the magnetoresistance signs vary arbitrarily.  相似文献   

13.
An anomalous field dependence of the magnetoresistance of V5S8 is observed at 42 kOe at liquid helium temperature. This is attributed to the spin flopping transition predicted by our torque experiments.  相似文献   

14.
The results of the investigations of molybdenum chalcogenides: UxPb1?xMo6S8, UxPb1?xMo6.4S8, ThxPb1?xMo6S8, Ux1?xMo6S8 with actinides as a component, are presented. As a rule the decrease of superconducting parameters with x was observed. Possible influence of magnetic interaction in this system is noted.  相似文献   

15.
In order to determine the copper content x of copper Chevrel compound CuxMo6S8?y(0?y?0.4) as a function of copper activity aCu and sulfur deficit y, a solid state electrochemical cell, Cu/Rb4Cu16I7Cl13/CuxMo6S8?y/Pt, was constructed and coulometric titration studies were made at 400 K. For the evaluation of the coulometric titration data, measurements were made on the electronic conductivity of copper-ion conductor Rb4Cu16I7Cl13. Also, a brief investigation was made on the condition of formation of single phase Chevrel CuxMo6S8?y with varying x and y at 1000°C. The structural change of CuxMo6S8?y with a change in x and y was studied by the X-ray diffraction method. It was found that x for constant aCu decreases with increasing y. The maximum value xmax of x in CuxMo6S8?y in equilibrium with metallic copper was found to be expressed by xmax=-(103)y+5. In the region of y<0.3, xmax exceeded 4, contrary to a presupposition that xmax is less than 4. X-ray analysis revealed that most of the copper Chevrel compounds denoted by CuxMo6S8 so far were sulfur deficient ones with y?0.4. The importance of sulfur deficit on the properties of the copper Chevrel compound was emphasized.  相似文献   

16.
The magnetism of the colossal magnetoresistance material FeCr2S4 was studied through substitution by nonmagnetic element Cd. With the increase of Cd content, the high-field magnetization measured at 5 K increases, demonstrating a ferromagnetic Cr–Cr interaction in CdCr2S4. As comparing with the anti-ferromagnetic material ZnCr2S4, it is deduced that the ferromagnetic interaction in CdCr2S4 is favored by its larger Cr–Cr distance. On the other hand, due to Cd substitution, the low-field magnetization irreversibility between zero-field-cooling and field-cooling magnetization weakens with the increase of Cd content and disappears at last when x = 1 in the Fe1?x Cd x Cr2S4 (0 ≤ x ≤ 1.0) system. By taking account of the single-ion anisotropy of the ferrous ion on the tetrahedral site, the picture of irreversible magnetic behavior induced by magnetic anisotropy is examined.  相似文献   

17.
The magnetoresistance, magnetization, and microstructure of granular composites with the general formula (Fe40Co40B20)x(Al2O3)100?x were studied for contents of the amorphous metallic component both above and below the percolation threshold (x≈43). The low-temperature transverse magnetoresistance of the composites is negative at x=41 and practically zero for x=49. For metal contents below the percolation threshold (x=31), a noticeable (7–8%) positive magnetoresistance, reached in magnetic fields of about 17 kOe, was observed. Possible mechanisms of the generation of inverse (positive) magnetoresistance are discussed.  相似文献   

18.
We study the removal of the copper in Cu3Mo6S8 by the intercalation of lithium. For 0<×<1, LixCu3Mo6S8 is a single phase compound. For x?1, the copper atoms are forced out of the Mo6S8 host. We present a lattice-gas model which shows how the intercalation of Li can force the Cu out of the host.  相似文献   

19.
In this work, we report the behavior of electrical resistivity of SmB6 at temperatures between 2.2 and 70 K in pulsed magnetic fields up to 54 T. A strong negative magnetoresistance was detected with increasing magnetic field, when lowering the temperature in the range T<30 K. We show that the amplitude of negative magnetoresistance reaches its maximum dR/R~70% at B=54 T, in the vicinity of phase transition occurring in this strongly correlated electron system at TC~5 K. The crossover from negative magnetoresistance to positive magnetoresistance found at intermediate temperatures at T>30 K is discussed within the framework of exciton-polaron model of local charge fluctuations in SmB6 proposed by Kikoin and Mishchenko. It seems that these exciton-polaron in-gap states are influenced both by temperature and magnetic field.  相似文献   

20.
Magnetization measurements in a static field as a function of temperature (2.5–20K) and pressure to 14 kbar are reported for a series of well characterized samples of EuMo6+xS8?y. From these d.c. magnetization data, we find no evidence for bulk superconductivity in any of our samples, although some of them exhibit a strong diamagnetic anomaly in the a.c. susceptibility under pressure, similar to that reported in the literature. An explanation for this anomaly is presented in terms of the presence of a granular superconducting impurity on the grain boundaries of the Chevrel phase compound EuMo6S8.  相似文献   

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