含有酰亚胺结构单元的氮杂和硫杂稠五环分子的合成与性能研究

设计合成了含有酰亚胺结构单元的氮杂和硫杂稠五环共轭分子1和2, 并对它们的物理化学性质进行了研究. 实验结果显示酰亚胺基团的引入不仅使得分子具有良好的溶解性, 而且有效地降低分子的HOMO和LUMO能级. 化合物1的单晶结构显示其共轭核具有良好的平面性. 单晶中, 化合物1通过强的π-π相互作用形成二聚体, 二聚体之间存在强的氢键相互作用. 基于化合物2的薄膜场效应晶体管表现出p-型场效应晶体管行为, 其最高迁移率为2.75×10^-3 cm²·V^-1·s^-1.     

十字交叉型π共轭分子3,6-二苯-1,2,4,5-(2′,2″-二苯基)-苯并二噁唑的电子结构和电荷传输性质的理论研究

采用密度泛函理论的B3LYP方法, 在6-31G(d)基组水平下研究了以三联苯和二苯基苯并噁唑构成的十字交叉型共轭分子3,6-二苯基-1,2,4,5-(2′,2″-二苯基)-苯并二噁唑的电子结构和电荷传输性质. 通过对分子的重组能和晶体中分子间电荷传输积分的计算得到该分子的空穴迁移率为0.31 cm²·V^-1·s^-1, 电子迁移率为0.11 cm²/(V·s). 计算结果表明, 空穴的传输主要是通过三联苯方向上两端苯环的“边对面”的相互作用以及分子中心π体系的错位重叠相互作用来实现的. 而电子的传输路径主要是通过苯并噁唑方向的π-π重叠相互作用来实现. 通过分析分子正负离子态的Mulliken电荷发现, 正电荷较多分布在三联苯方向上, 而负电荷较多分布在苯并噁唑方向上. 计算结果表明, 电子和空穴的传输分别在分子相互交叉的不同方向上, 有利于电子和空穴的平衡传输.     

8-羟基喹啉铍及其衍生物电子光谱性质的含时密度泛函理论研究

运用密度泛函理论(DFT)B3LYP方法和abinitioHF单激发组态相互作用(CIS)法分别优化了有机金属配合物8-羟基喹啉铍(BeQ₂)及其3种衍生物分子的基态及最低激发单重态几何结构.系统分析了分子结构、前线分子轨道特征和能级分布规律以探索电子跃迁机理.应用含时密度泛函理论(TD-DFT)计算分子的电子光谱,揭示了BeQ₂及其衍生物的发光源于配体中π→π^*电子跃迁,指出通过配体修饰可以有效地影响配合物前线分子轨道分布,调整发光波段,并有效提高电荷转移量.     

咔唑衍生物DiPICz载流子传输性能的理论研究

依据Marcus理论, 在密度泛函理论水平下对咔唑衍生物Dibenzo[2,3: 5,6]pyrrolizino[1,7-bc]indolo-[1,2,3-lm]carbazole(DiPICz)的电子结构和传输性质进行系统研究. 计算结果表明, DiPICz的电子迁移率(5.81×10^-2 cm²·V^-1·s^-1)反常地高出空穴迁移率(6.02×10^-4 cm²·V^-1·s^-1)2个数量级, 表明稠合修饰可能是一种潜在的转变传输材料极性的手段. 分析发现, 导致DiPICz具有较好电子传输性质的原因在于相对较小的电子重组能和较好的晶体堆积方式. 在其鱼骨型堆积的晶体中, 存在着滑移的π-π及边对面的 CH…N和CH…π相互作用. 这些相互作用由于形成二维的电荷传输通道, 从而在电子传输中起着重要作用.     

BPh-2(mqp)的电子结构和光谱性质的含时密度泛函理论研究

采用abinitioHF和DFTB3LYP方法,对配合物BPh₂(mqp)基态结构进行优化,分析了前线分子轨道特征和能级分布.用abinitioCIS方法优化体系激发态结构.用含时密度泛函理论(TD-DFT)对BPh₂(mqp)的电子光谱进行了研究.结果发现,该物质是配体发光配合物,其发光源于mqp配体内π^*→π的电子跃迁.这表明在mqp配体上进行修饰,可有效地影响配合物前线分子轨道分布,达到调整发光波段的目的.     

折叠型双银配合物电子结构与相关性质

在密度泛函B3LYP/LanL2DZ的水平上,对具有π-π弱相互作用调控的折叠型银配合物Ag₂(MPTQ)₂²⁺进行计算研究。探讨该配合物的电子结构、成键特征、π-π弱相互作用机理、电荷布居及其相关性质。计算结果表明,Ag…Ag之间存在弱的直接相互作用,HOMO主要布居在配体中芳香环的σ-p轨道、S的σ-p轨道及与S相连的C12的S轨道上,LUMO主要布居在配体中芳香环的π^*-p轨道上,基态电子光谱主要是配体中的n→π^*跃迁产生的电荷转移光谱。论文还讨论了分子间π-π弱相互作用的本质及活性部位等。计算结果能较好地解释实验现象与规律。     

硅纳米线和聚3-十二烷基噻吩混合薄膜在场效应晶体管中的应用研究

为了提高聚3-十二烷基噻吩的场效应迁移率, 将硅纳米线混入聚3-十二烷基噻吩的溶液中制成薄膜. 退火后的聚3-十二烷基噻吩能够自组装成有序的微晶结构, 有利于电子传输. 聚3-十二烷基噻吩薄膜在场效应晶体管中能够获得0.015 cm²·V^-1·s^-1的迁移率, 而混合薄膜能够获得高达0.68 cm²·V^-1·s^-1的迁移率. 这是因为硅纳米线优异的电子传输性能使得电子通过硅纳米线就像通过快速通道一样, 从而能够缩短电子在场效应晶体管中的传输时间, 提高传输速度. 此外, 使用离子胶作为介电层也能够提升场效应晶体管的性能, 混合薄膜能够获得高达6.2 cm²·V^-1·s^-1的迁移率.     

基于二噻吩并吡咯π桥的窄带隙非富勒烯受体材料在有机太阳能电池中的应用

以不同烷基取代的二噻吩并吡咯(DTP)为π桥,连接吲哒省并二噻吩(IDT)中间单元和氰基茚酮(IC)或二氟代氰基茚酮(2F-IC)末端基团,设计并合成了6个窄带隙的非富勒烯受体材料。 其中,IDTDTP-C₂C₂-H和IDTDTP-C₂C₂-F中的DTP单元以1-乙基丙基为侧链,IDTDTP-C₆C₆-H和IDTDTP-C₆C₆-F中的DTP单元以1-己基庚基为侧链,IDTDTP-C₁₂-H和IDTDTP-C₁₂-F中的DTP单元以十二烷基为侧链。 6个分子均具有较窄的光学带隙(1.37~1.44 eV)。 相比于以IC为末端基团的分子(IDTDTP-C₂C₂-H、IDTDTP-C₆C₆-H和IDTDTP-C₁₂-H),由于氟原子的拉电子效应,以2F-IC为末端基团的分子(IDTDTP-C₂C₂-F、IDTDTP-C₆C₆-F和IDTDTP-C₁₂-F)具有红移的吸收光谱,以及更低的最高分子占有轨道能级(HOMO)和最低分子空轨道(LUMO)能级。 以宽带隙聚合物聚[2,6-(4,8-双(5-(2-乙基己基))噻吩-2-基)-苯并[1,2-b:4,5-b']二噻吩-alt-5,5-(1',3'-二-2-噻吩)-5',7'-双(2-乙基己基)-苯并[1',2'-c:4',5'-c']二噻吩-4,8-二酮](PBDB-T)为给体材料,制备了有机太阳能电池器件。 PBDB-T:IDTDTP-C₆C₆-F共混薄膜具有较高且更平衡的空穴/电子迁移率,以及良好的形貌,基于PBDB-T:IDTDTP-C₆C₆-F的有机太阳能电池获得了6.94%的能量转换效率,开路电压为0.86 V,短路电流密度为13.56 mA/cm²,填充因子为59.5%。     

芳基桥联的二薁二酰亚胺的设计合成及场效应晶体管性能研究

在本工作中,发展了一种新的合成策略,利用薁各位点的反应活性差异选择性地在薁的1-位进行官能团化,合成了由苯环（B）或噻吩并[3,2-b]噻吩基团（TT）桥联的二薁二酰亚胺化合物AzAzBDI-1、AzAzBDI-2和AzAzTTDI.AzAzBDI-2的单晶结构显示其具有扭曲的共轭骨架,相邻的两个分子通过分子间薁的七元环和五元环的π-π相互作用形成二聚体,二聚体与二聚体之间通过强的π-π相互作用形成滑移的一维堆积.用紫外-可见光吸收光谱和循环伏安法对三个化合物的光谱和电化学性质进行表征,计算出各分子的轨道能级和带隙.基于三个化合物的有机场效应晶体管器件（OFET）均表现出n-型主导的双极性有机半导体特性.其中AzAzTTDI表现出最优的OFET性能,其电子和空穴迁移率分别为0.087 cm²·V^－1·s^－1和8.8×10^－3 cm²·V^－1·s^－1.     

从头计算法研究取代锂卡宾正离子的分子轨道和稳定化能

用从头计算法计算了各种取代的锂卡宾正离子XCHLi⁺(X=OH,NH₂,CH₂CH,NC,C₆H₅)相对于锂卡宾正离子CH₂Li⁺的稳定化能,并讨论了稳定化能和它们分子轨道的关系。具有π给予功能的取代基,在其共平面分子构型中,由于和卡宾碳和锂原子空轨道形成二电子多中心共轭分子轨道,因而具有最大的稳定作用。相反,在相应的正交构型中,稳定作用则较小。同时具有π给予和σ接受效应的取代基,π给予起主导作用。仅有σ接受功能的取代基,则有去稳定作用。考察它们的LUMO特点,发现它们具有较高的亲电反应性能。     

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).     

Functionalized methanofullerenes used as n-type materials in bulk-heterojunction polymer solar cells and in field-effect transistors

The synthesis of two well-solubilized [60]methanofullerene derivatives ( p- EHO-PCBM and p- EHO-PCBA) is presented for usage in organic solar cells and in field-effect transistors. The para position of the PCBM's phenyl ring was substituted with a branched alkoxy side chain, which contributes to higher solubility, facilitating synthesis, purification, and processing. We find a small change of the open-circuit voltage ( V oc) as a slight improvement in performance upon application in P3HT/[60]methanofullerene bulk-heterojunction-photovoltaic cells, when compared to PCBM, because of the electron donation of the alkoxy group. In the case of the devices with a TiO x layer, the best power conversion efficiencies (PCE, eta e) is observed in a layered structure of P3HT/ p- EHO-PCBA/TiO x (eta e = 2.6%), which slightly exceeds that of P3HT/PCBM/TiO x (eta e = 2.3%) under conditions reported here. This can be attributed, in part, to the carboxylic acid group in p- EHO-PCBA that leads to an effective interface interaction between the active layer and TiO x phase. In addition, n-channel organic field-effect transistor (OFET) devices were fabricated with thin films of p- EHO-PCBM and p- EHO-PCBA, respectively cast from solution on SiO 2/Si substrates. The values of field-effect mobility (mu) for p- EHO-PCBM and p- EHO-PCBA are 1 x 10 (-2) and 1.6 x 10 (-3) cm (2)/V.s, respectively. The results in this paper demonstrate the effects of a carboxylic acid group and an electron-donating substituent in [60]methanofullerenes as n-type materials with respect to organic solar cells and OFET applications.     

2,7-diphenyl[1]benzoselenopheno[3,2-b][1]benzoselenophene as a stable organic semiconductor for a high-performance field-effect transistor

[1]Benzoselenopheno[3,2-b][1]benzoselenophene (BSBS) and its 2,7-diphenyl derivative (DPh-BSBS) were readily synthesized from diphenylacetylene and bis(biphenyl-4-yl)acetylene, respectively, with a newly developed straightforward selenocyclization protocol. In contrast to the parent BSBS that has poor film-forming properties, the diphenyl derivative DPh-BSBS formed a good thin film on the Si/SiO(2) substrate by vapor deposition. X-ray diffraction examination revealed that this film consists of highly ordered molecules that are nearly perpendicular to the substrate, making it suitable for use in the fabrication of organic field-effect transistors (OFETs). When fabricated at different substrate temperatures (room temperature, 60 degrees C, and 100 degrees C) in a "top-contact" configuration, all the DPh-BSBS-based OFET devices exhibited excellent p-channel field-effect properties with hole mobilities >0.1 cm(2) V(-1) s(-1) and current on/off ratios of approximately 10(6). This high performance was essentially maintained over 3000 continuous scans between V(g) = +20 and -100 V and reproduced even after storage under ambient laboratory conditions for at least one year.     

N,N′-二[3-氯-5S-(l-孟氧基)-2(5H)-4-呋喃酮基]-1,4-丁二胺的合成及晶体结构(英文)

合成了N,N′-二[3-氯-5S-(l-孟氧基)-2(5H)-4-呋喃酮基]-1,4-丁二胺,并通过IR,1H NMR,MS和X射线单晶衍射对其进行了表征.X射线单晶衍射结果表明:标题化合物的不对称结构单元中包含一个平面的呋喃酮环和一个椅式的环己烷环,四个手性中心.标题化合物通过N—H…O分子间氢键作用实现空间堆积.     

N，N’-二[3-氯-5S-（l-孟氧基）-2（5H）-4-呋喃酮基]-1，4-丁二胺的合成及晶体结构

合成了N,N’-二[3-氯-5S-（l-孟氧基）-2（5H）-4-呋喃酮基]-1,4-丁二胺,并通过IR,^1H NMR,MS和X射线单晶衍射对其进行了表征．X射线单晶衍射结果表明：标题化合物的不对称结构单元中包含一个平面的呋喃酮环和一个椅式的环己烷环,四个手性中心．标题化合物通过N—H…O分子间氢键作用实现空间堆积．     

Synthesis and characterisation of liquid crystal molecules based on thieno [3,2-b] thiophene and their application in organic field-effect transistors

A thieno [3,2-b] thiophene-based planar liquid crystal molecule, C₁₂-PTTT, which possesses the characteristics of an organic field-effect transistor (OFET), was synthesised and its mesomorphic properties were studied by polarising optical microscopy and differential scanning calorimetry. A wide temperature range for a highly oriented smectic phase was observed. OFET devices made under various conditions, such as self-assembled monolayer treatment and alignment treatment, and with micro-channel structures, were fabricated to measure the electrical properties. Among different OFET device conditions, the best electric carrier mobility for C₁₂-PTTT was 0.038 cm²?V^?1?s^?1.     

Heptacene: Synthesis and Its Hole-Transfer Property in Stable Thin Films

Heptacene ( 1 ) has been produced via a monoketone precursor, 2 , which was prepared from 1,2,4,5-tetrabromobenzene in nine steps in a total yield of 10 %. Compound 2 was converted to 1 quantitatively by heating at 202 °C. Heptacene exhibited high thermal stability in the solid state without any observable change over two months. To investigate the potential value of 1 as a material for p-type organic field-effect transistors (OFETs), top-contact OFET devices were fabricated by vacuum deposition of 1 onto a hexamethyldisilazane (HMDS)/SiO₂/Si substrate. The best hole mobility performance was 2.2 cm² V⁻¹ s⁻¹. This is the first report of stable heptacene being used in an effective device and examined for its charge carrier properties.     

[4]Cyclo-N-ethyl-2,7-carbazole: Synthesis,Structural, Electronic and Charge Transport Properties

Nanorings, which are macrocycles possessing radially directed π-orbitals have shown fantastic development in the last ten years. Unravelling their unusual electronic properties has been one of the driving forces of this research field. However, and despite promising properties, their incorporation in organic electronic devices remains very scarce. In this work, we aim to contribute to bridge the gap between organic electronics and nanorings by reporting the synthesis, the structural and electronic properties and the incorporation in an organic field-effect transistor (OFET) of a cyclic tetracarbazole, namely [4]cyclo-N-ethyl-2,7-carbazole ( [4]C-Et-Cbz ). The structural, photophysical and electrochemical properties have been compared to those of structurally related analogues [4]cyclo-9,9-diethyl-2,7-fluorene [4]C-diEt-F (with carbon bridges) and [8]-cycloparaphenylene [8]CPP (without any bridge) in order to shed light on the impact of the bridging in nanorings. This work shows that nanorings can be used as an active layer in an OFET and provides a first benchmark in term of OFET characteristics for this type of molecules.     

Molecular orientation and interface compatibility for high performance organic thin film transistor based on vanadyl phthalocyanine

Organic thin film field-effect transistors (OTFTs) with mobility up to 1.0 cm2 V(-1) s(-1) and on/off ratio of 10(6)-10(8) as well as good environmental stability were demonstrated by using vanadyl phthalocyanine (VOPc), a pyramid-like compound with an ultra closely pi-stacked structure. The high performance, remarkable stability, low price, easy availability and nontoxicity of VOPc enabled it to be a promising candidate for OTFTs. Furthermore, we found that the mobility of the devices on OTS-modified Si/SiO2 substrates was 2 orders of magnitude higher than that of devices on Si/SiO2 substrates. Significantly, the relationship between field effect property and insulator surface property was explained from two new aspects of distribution of molecular orientation and interface compatibility, which might provide not only a useful model to explain why the surface modification with OTS could largely improve the field-effect performance but also a guide for rational optimization of device structure for higher performance. In addition, the field effect property of VOPc devices under vacuum, i.e., the oxygen doping effect on the VOPc devices, was measured. We found that the hole mobility decreased by several orders of magnitude with decreasing pressure. At a pressure below 10(-2) Pa, the device on OTS-modified substrates exhibited ambipolar conduction. These results indicated that the oxygen doping exerted essential effect on the field-effect property of VOPc, which was clearly distinct from that observed for pentacene-based OFETs.     

吲哚方酸菁半导体在场效应晶体管中的应用

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质, 通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式, 并在Si/SiO₂基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件. 通过对器件性能与沟道形态的研究, 我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变, 从而使薄膜晶体管的迁移率从10^-5 cm²?V^-1?s^-1量级提高到10^-3 cm²?V^-1?s^-1量级. 顶接触结构单晶器件获得了7.8×10^-2 cm²?V^-1?s^-1的迁移率. 未封装的方酸菁晶体管在大气中也表现出较好的稳定性.