Electrical generation of pure spin current with oscillating spin-orbit interaction

We propose an electrical scheme for the generation of a pure spin current without a charge current in a two-terminal device, which consists of a scattering region of a two-dimensional electron gas (2DEG) with Rashba (R) and/or Dresselhaus (S) spin-orbit interaction (SOI) and two normal leads. The SOI is modulated by a time-dependent gate voltage to pump a spin current. Based on a tight-binding model and the Keldysh Green’s function technique, we obtain the analytical expression of the spin current. It is shown that a pure spin current can be pumped out, and its magnitude could be modulated by device parameters such as the oscillating frequency of the SOI, as well as the SOI strength. Moreover, the spin polarisation direction of the spin current could also be tuned by the strength ratio between RSOI and DSOI. Our proposal provides not only a fully electrical means to generate a pure spin current but also a way to control the spin polarisation direction of the generated spin current.     

Creation of entanglement between two electron spins induced by many spin ensemble excitations

We theoretically explore the possibility of creating spin entanglement by simultaneously coupling two electronic spins to a nuclear ensemble. By microscopically modeling the spin ensemble as a single mode boson field, we use the time-dependent Fr?hlich transformation (TDFT) method developed recently [Y. Li, C. Bruder, C.P. Sun, Phys. Rev. A 75, 032302 (2007)] to calculate the effective coupling between the two spins. Our investigation shows that the total system realizes a solid state based architecture for cavity QED. Exchanging such kind of effective boson in a virtual process can result in an effective interaction between two spins. It is discovered that a maximum entangled state can be obtained when the velocity of the electrons matches the initial distance between them in a suitable way. Moreover, we also study how the number of collective excitations influences the entanglement. It is shown that the larger the number of excitation is, the less the two spins entangle each other.     

Photocurrent spin diode: Electrically controlled sign reversal of current polarization

We report a study of spin-dependent transport through a quantum dot irradiated by continuous circularly polarized light resonant to the electron-heavy hole transition. We use the nonequilibrium Green's function to calculate the spin accumulation, spin-resolved currents, and current polarization in the presence of an external bias and intradot Coulomb interaction. It is found that for a range of external biases sign reversal of the current polarization can be modulated. The system thus operates as a rectifier for spin current polarization. This effect follows from the interplay between the external irradiation and the Coulomb repulsion. The spin-polarized transport through a three-terminal device is also discussed. Spin current with high polarization could be obtained due to spin filter effect.     

Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. Received 6 May 1998     

Effect of electric-field on spin transport and spin current in an organic semiconductor system

We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

Spin current in quantum XXZ spin chain

The spin current in the one-dimensional quantum XXZ spin chain is studied based on the exact solutions. It is found that the spin voltage controlled by the unparallel boundary magnetic fields can induce the pure longitudinal spin current in the system. By using Wiener–Hopf and generalized algebraic Bethe ansatz methods, the analytic expressions for the spin current and the spin conductance are obtained. The spin current is proportional to the inverse of the length of the spin chain. The magnitude of spin current can be manipulated by the strength and the twist angle of two boundary magnetic fields. The exact analysis also shows that there exist an Ohm law or London equation type relation between the spin current and the spin conductance.     

Andreev quantum dots for spin manipulation

We investigate the feasibility of manipulating individual spin in a superconducting junction where Bogoliubov quasiparticles can be trapped in discrete Andreev levels. We call this system an Andreev quantum dot (AQD) to be contrasted with a common semiconductor quantum dot. We show that the AQD can be brought into a spin-1/2 state. The coupling between the spin and superconducting current facilitates manipulation and measurement of this state. We demonstrate that one can operate two inductively coupled AQDs as a XOR gate; this enables quantum computing applications.     

Spiral spin order of self-assembled Co nanodisk arrays

Spin order in hexagonal close packed cobalt nanodisk rows is quantitatively determined by off-axis electron holography. Periodic variation in the density of the local magnetic flux shows features of a spiral spin arrangement along the row axis, resulting from a tilted magnetic moment of nanoparticles with respect to the nanodisk axis.     

Beam splitter for spin waves in quantum spin network

We theoretically design and analytically study a controllable beam splitter for the spin wave propagating in a star-shaped (e.g., a Y-shaped beam) spin network. Such a solid state beam splitter can display quantum interference and quantum entanglement by the well-aimed controls of interaction on nodes. It will enable an elementary interferometric device for scalable quantum information processing based on the solid system.     

Spin-polarized current through a lateral double quantum dot with spin–orbit interaction

We study the spin-polarized current through a vertical double quantum dot scheme. Both the Rashba spin–orbit (RSO) interaction inside one of the quantum dots and the strong intradot Coulomb interactions on the two dots are taken into account by using the second-quantized form of the Hamiltonian. Due to the existence of the RSO interaction, spin-up and spin-down electrons couple to the external leads with different strengths, and then a spin polarized current can be driven out of the middle lead by controlling a set of structure parameters and the external bias voltage. Moreover, by properly adjusting the dot levels and the external bias voltages, a pure spin current with no accompanying charge current can be generated in the weak coupling regime. We show that the difference between the intradot Coulomb interactions strongly influences the spin-polarized currents flowing through the middle lead and is undesirable in the generation of the net spin current. Based on the RSO interaction, the structure we propose can efficiently polarize the electron spin without the usage of any magnetic field or ferromagnetic material. This device can be used as a spin-battery and is realizable using the present available technologies.     

CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction as a spin current diode predicted by first-principles calculations

We report on first-principles calculations of spin-dependent quantum transport in a CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction and predict a strong diode effect of charge and spin current. The minority spin current is absolutely inhibited when the bias voltage is applied to the terminals of both CrAs and AlAs. The majority spin current is inhibited when the bias voltage is applied to the terminal of CrAs and “relaxed” when the bias voltage is applied to the terminal of AlAs. The charge and spin current diode are promising for reprogrammable logic applications in the field of spintronics.     

一种输出自旋流的装置--自旋池

文章作者设计了一种能够给未来的自旋电路提供驱动自旋流的动力装置，即自旋池．该自旋池有如下四个基本特点：(1)有两个极能使自旋流从一个极流入，从另一个极流出，从而建立一个闭合的自旋回路；(2)有一个能量源；(3)能保持自旋相干；(4)能输出不附加任何净电荷流的纯自旋流，值得注意的是，该自旋池能通过现有的技术手段实现。     

Detection of single spin decoherence in a quantum dot via charge currents

We consider a quantum dot attached to leads in the Coulomb blockade regime that has a spin 1 / 2 ground state. We show that, by applying an ESR field to the dot spin, the stationary current in the sequential tunneling regime exhibits a new resonance peak whose linewidth is determined by the single spin decoherence time T2. The Rabi oscillations of the dot spin are shown to induce coherent current oscillations from which T2 can be deduced in the time domain. We describe a spin inverter which can be used to pump current through a double dot via spin flips generated by ESR.     

Spin filtering through ballistic nanojunctions, the role of geometry and of spin orbit interaction

We suggest a spin filter scheme using T-stub nanometric crossjunctions patterned in two dimensional electron gases (2DEGs) in the presence of spin orbit interaction (SOI). We compare the effects of SOI arising from vertical confinement of charge carriers in the well, Rashba or α-SOI, with SOI generated by lateral confinement of the wire, β-SOI. We show that β coupling can be more effective in generating a spin polarized current as compared to α-SOI. We also compare the efficiency of the T-stub filter with the one of the X shaped cross junction.     

存在自旋轨道耦合的介观小环中的持续自旋流

文章作者研究了存在自旋轨道耦合的介观小环的平衡态性质.此前人们已经知道,在有磁通穿过的介观小环中,绕环运动的电子会产生一附加的Berry相位而导致持续电流;同样地,在仅有自旋轨道耦合的体系中,电子绕环运动也应当会产生附加的自旋Berry相位,进而驱动持续自旋流.文章作者通过对一个有正常区和自旋轨道耦合区的复合小环的计算,结果表明,无电流伴随的纯持续自旋流的确存在.文章作者指出,这持续自旋流描述真实的自旋运动,并且它能被实验观测.     

Persistent spin current in a mesoscopic hybrid ring with spin-orbit coupling

We investigate the equilibrium property of a mesoscopic ring with a spin-orbit interaction. It is well known that, for a normal mesoscopic ring threaded by a magnetic flux, the electron acquires a Berry phase that induces the persistent (charge) current. Similarly, the spin of an electron acquires a spin Berry phase traversing a ring with a spin-orbit interaction. It is this spin Berry phase that induces a persistent spin current. To demonstrate its existence, we calculate the persistent spin current without an accompanying charge current in the normal region in a hybrid mesoscopic ring. We point out that this persistent spin current describes the real spin motion and can be observed experimentally.     

Manipulating magnetic anisotropy and ultrafast spin dynamics of magnetic nanostructures

We present our extensive research into magnetic anisotropy. We tuned the terrace width of Si(111) substrate by a novel method: varying the direction of heating current and consequently manipulating the magnetic anisotropy of magnetic structures on the stepped substrate by decorating its atomic steps. Laser-induced ultrafast demagnetization of a Co Fe B/Mg O/Co Fe B magnetic tunneling junction was explored by the time-resolved magneto-optical Kerr effect(TRMOKE) for both the parallel state(P state) and the antiparallel state(AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two Co Fe B layers via the tunneling of hot electrons through the Mg O barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electron tunneling current. This opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions. Furthermore, an all-optical TR-MOKE technique provides the flexibility for exploring the nonlinear magnetization dynamics in ferromagnetic materials, especially with metallic materials.     

Quantum toys for quantum computing: persistent currents controlled by the spin Josephson effect

Quantum devices and computers will need operational units in different architectural configurations for their functioning. The unit should be a simple "quantum toy," an easy to handle superposition state. Here such a novel unit of quantum mechanical flux state (or persistent current) in a conducting ring with three ferromagnetic quantum dots is presented. The state is labeled by the two directions of the persistent current, which is driven by the spin chirality of the dots, and is controlled by the spin (the spin Josephson effect). It is demonstrated that by the use of two connected rings, one can carry out unitary transformations on the input flux state by controlling one spin in one of the rings, enabling us to prepare superposition states. The flux is shown to be a quantum operation gate, and may be useful in quantum computing.     

Pure spin currents generation in magnetic tunnel junctions by means of adiabatic quantum pumping

We study the spin polarized currents generation in a magnetic (ferromagnetic/ferromagnetic) tunnel junction by means of adiabatic quantum pumping. Using a scattering matrix approach, it is shown that a pure spin current can be pumped from one ferromagnetic lead into the adjacent one by adiabatic modulation of the magnetization and the height of the barrier at the interface in absence of external bias voltage. We numerically study the characteristic features of the pure spin current and discuss its behavior for realistic values of the parameters. We show that the generated pure spin current is robust with respect to the variation of the magnetization strength, a very important feature for a realistic device, and that the proposed device can operate close to the optimal pumping regime. An experimental realization of a pure spin current injector is also discussed.