Pseudopotential calculations on Si2H6 and Si2H4

Local pseudopotential calculations have been performed for the ground state of disilane as well as for the lowest singlet and triplet states of disilene and silylsilylene. Comparison with all-electron calculations shows good agreement for geometries and relative stabilities.     

Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-(2 x 2)

First-principles pseudopotential calculations, within a simple dynamically constrained scheme, have been performed to investigate the reaction of 0.25 ML coverage of SiH4 and Si2H6 with the Si(001)-(2 x 2) surface. The silane molecule (SiH4) is adsorbed on to the surface at a number of different sites (on dimer, interrow, or intrarow) with varying barrier heights. Two distinct structures, which are similar in energy, arise from the initial dissociative reaction SiH4-->SiH3(silyl) + H, where the dissociated species are adsorbed either on the same dimer components or on adjacent dimer components. Several further decays of silyl from SiH4 are presented in two separate regimes of high and low ambient hydrogen coverages. The decomposition of silyl can form two different bridging structures: an on top or an intrarow bridging structure in both of the two hydrogen coverage regimes. The disilane molecule (Si2H6) is also adsorbed upon this surface with varying energy barriers, resulting in a dissociation reaction where two SiH3 species are adsorbed on one dimer or in an adjacent dimer configuration. Plausible energy reaction paths for the above models are presented. The stability of the SiH2 species is also discussed.     

Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4)

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.     

MC-SCF and CI calculations on four isomers of Si6H6

The four isomers of Si₆ H₆, hexasilabenzene ( 1 ), hexasilaprismane ( 2 ), hexasila-Dewar benzene ( 3 ), and tris-(disilanediyl) ( 4 ), have been investigated, using highly correlated wavefunctions in conjunction with a local pseudopotential approach. At the Hartree-Fock level 1 (D_6h), 2 (D_3h), and 3 (C_2v) are established as minima by means of the harmonic vibrational frequencies. Inclusion of the most important correlation corrections via CI however, provokes a significant puckering of 1 resulting in a D_3d structure, 7.1 kJ/mol below the planar conformer. The detailed analysis shows unambiguously that the propensity to puckering is due solely to the correlation contributions from the σ framework while correlation of the π electrons is of little relevance. Isomer 2 turns out to be the most stable of the investigated isomers lying 41 kJ/mol below 1 (D_3d). Isomers 3 and 4 are more than 100 kJ/mol higher in energy. The Si? Si bond energies of 1 and 2 are determined as 251 and 176 kJ/mol, respectively.     

Mono- and dibridged isomers of Si2H3 and Si2H4: the true ground state global minima. Theory and experiment in concert

Highly correlated ab initio coupled-cluster theories (e.g., CCSD(T), CCSDT) were applied on the ground electronic states of Si(2)H(3) and Si(2)H(4), with substantive basis sets. A total of 10 isomers, which include mono- and dibridged structures, were investigated. Scalar relativistic corrections and zero-point vibrational energy corrections were included to predict reliable energetics. For Si(2)H(3), we predict an unanticipated monobridged H(2)Si-H-Si-like structure (C(s), (2)A') to be the lowest energy isomer, in constrast to previous studies which concluded that either H(3)Si-Si (C(s), (2)A') or near-planar H(2)Si-SiH (C(1), (2)A) is the global minimum. Our results confirm that the disilene isomer, H(2)Si-SiH(2), is the lowest energy isomer for Si(2)H(4) and that it has a trans-bent structure (C(2)(h), (1)A(g)). In addition to the much studied silylsilylene, H(3)Si-SiH, we also find that a new monobridged isomer H(2)Si-H-SiH (C(1), (1)A, designated 2c) is a minimum on the potential energy surface and that it has comparable stability; both isomers are predicted to lie about 7 kcal/mol above disilene. By means of Fourier transform microwave spectroscopy of a supersonic molecular beam, the rotational spectrum of this novel Si(2)H(4) isomer has recently been measured in the laboratory, as has that of the planar H(2)Si-SiH radical. Harmonic vibrational frequencies as well as infrared intensities of all 10 isomers were determined at the cc-pVTZ CCSD(T) level.     

On the distinct reactivity of two isomers of [IrC4H2]+ toward methane and water

The gas-phase reactions of [IrC₄H₂]⁺ with methane and water have been explored by using mass spectrometry combined with quantum chemical calculations. Interestingly, under the employed conditions, two isomers of [IrC₄H₂]⁺ co-exist with different reactivity. One of them only activates methane while the other is solely reactive with water to produce CO. Apparently, upon varying the coordination patterns, the Ir center gains rather distinct capabilities of mediating the bond breaking and making processes. The reactivity toward methane mainly depends on the orbital orientation, while the π-aromaticity of the reaction complex matters for the conversion of water. The experimental and theoretical findings in this work do not only imply the promising role the Ir atom can play in the bulk-system methane conversion, but may also be instructive on how to construct a high-performance center for steam reforming of methane.

     

The pyrolysis kinetics of 4-chloro-2-butanone in the gas phase

The rates of pyrolysis of 4-chloro-2-butanone in the gas phase have been determined in a static system seasoned with the products of decomposition of allyl bromide. The reaction is catalyzed by hydrogen chloride. Under maximum catalysis of HCl, the kinetics were found to be of order 1.5 in the substrate suggesting that a complex elimination is involved. The reaction, when maximally inhibited with propene, appears to undergo a unimolecular elimination and follows a first-order law kinetics. The products are methylvinyl ketone and hydrogen chloride. The kinetics have been measured over the temperature range of 402.0–424.4°C.The rate coefficients are given by the Arrhenius equation \documentclass{article}\pagestyle{empty}\begin{document}$ \log k_1 (\sec ^{ - 1}) = (13.67 \pm 0.69) - (225.2 \pm 8.6)\,{\rm kj}/{\rm mol}/2.303RT\angle $\end{document}. Thepyrolysis of 4-chloro-2-butanone is 31 times greater in rate than that of ethyl chloride at 440°C. This large difference in rate may be attributed to the -M effect of the acetyl substituent in the pyrolysis of the former halo compound.     

Association reaction between SiH3 and H2O2: a computational study of the reaction mechanism and kinetics

The association reaction between silyl radical (SiH₃) and H₂O₂ has been studied in detail using high-level composite ab initio CBS-QB3 and G4MP2 methods. The global hybrid meta-GGA M06 and M06-2X density functionals in conjunction with 6-311++G(d,p) basis set have also been applied. To understand the kinetics, variational transition-state theory calculation is performed on the first association step, and successive unimolecular reactions are subjected to Rice–Ramsperger–Kassel–Marcus calculations to predict the reaction rate constants and product branching ratios. The bimolecular rate constant for SiH₃–H₂O₂ association in the temperature range 250–600 K, k(T) = 6.89 × 10^?13 T ^?0.163exp(?0.22/RT) cm³ molecule^?1 s^?1 agrees well with the current literature. The OH production channel, which was experimentally found to be a minor one, is confirmed by the rate constants and branching ratios. Also, the correlation between our theoretical work and experimental literature is established. The production of SiO via secondary reactions is calculated to be one of the major reaction channels from highly stabilized adducts. The H-loss pathway, i.e., SiH₂(OH)₂ + H, is the major decomposition channel followed by secondary dissociation leading to SiO.     

Ionization efficiencies of C3H6, C4H8, C6H12, C2H6O,and C3H8O isomers

Ionization efficiencies of 14 organic compounds have been measured in the wavelength region from 105 to 134nm using an ionization chamber. The compounds examined are cyclopropane, propylene, l-butene, isobutene, cis-and trans-2-butenes, cyclohexane, 1-hexane, tetramethylethylene, ethyl alcohol, dimethyl ether, n-, and iso-propyl alcohol, and ethyl methyl ether. The ionization efficiencies of cyclopropane and cyclohexane monotonically increase with increasing photon energy, but those for the others show a peak or a shoulder in the wavelength region of the present work.     

Reduction of silicon halides and alkoxides with diisobutylaluminum hydride. Stereochemistry-rate law correlations for the SNiSi and SN2Si mechanisms

Stereochemistry-rate law correlations are given for the reduction of R₃Si*X compounds with i-Bu₂ AlH in either and n-hexane.     

The kinetics of the gas-phase reaction between iodine and phenylsilane and the bond dissociation energy D(C6H5SiH2?H)

The title reaction has been investigated in the temperature range of 490-573 K. Initial reactant pressures were varied in the range of 0.2-5.2 torr (I₂) and 2-20 torr (C₆H₅SiH₃). The rate of iodine consumption, monitored spectrophotometrically, was found to obey both by initial rate and integrated equation fitting procedures. The effect of added initial HI conformed to this expression. The data are consistent with a conventional I-atom propagated chain reaction, and for the step the rate constant is given by From this is derived the bond dissociation energy value C₆H₅SiH₂? H = 374 kJ/mol(88 kcal/mol). A comparison with other Si? H dissociation energy values indicates that the “silabenzyl” stabilization energy is small, ≈7 kJ/mol.     

Molecule intrinsic minimal basis sets. II. Bonding analyses for Si4H6 and Si2 to Si10

The method, introduced in the preceding paper, for recasting molecular self-consistent field (SCF) or density functional theory (DFT) orbitals in terms of intrinsic minimal bases of quasiatomic orbitals, which differ only little from the optimal free-atom minimal-basis orbitals, is used to elucidate the bonding in several silicon clusters. The applications show that the quasiatomic orbitals deviate from the minimal-basis SCF orbitals of the free atoms by only very small deformations and that the latter arise mainly from bonded neighbor atoms. The Mulliken population analysis in terms of the quasiatomic minimal-basis orbitals leads to a quantum mechanical interpretation of small-ring strain in terms of antibonding encroachments of localized molecular-orbitals and identifies the origin of the bond-stretch isomerization in Si4H6. In the virtual SCF/DFT orbital space, the method places the qualitative notion of virtual valence orbitals on a firm basis and provides an unambiguous ab initio identification of the frontier orbitals.     

Comparative ab initio study of the structures and stabilities of the ethane dication C2H6(2+) and its silicon analogues Si2H6(2+) and CSiH6(2+)

Ab initio MP2/6-311G and QCISD(T)/6-311G levels as well as Gaussian-2 theory were used to perform a comparative study of the structures and stabilities of the ethane dication C(2)H(6)(2+) and its silicon analogues Si(2)H(6)(2+) and CSiH(6)(2+). Similar to previous HF/6-31G results, our present calculations also indicate that the two-electron three-center (2e-3c) bonded carbonium-carbenium structure 1 is more stable than the doubly hydrogen bridged diborane-type structure 2 by about 12 kcal/mol. For the silicon analogue Si(2)H(6)(2+) the calculations, however, indicate that the 2e-3c bonded siliconium-silicenium structure 8 is about 9 kcal/mol less stable than doubly hydrogen bridged structure 9. Similar results were also computed for carbon-silicon mixed CSiH(6)(2+) dication structures. These studies are in agreement with the more electropositive character of silicon compared to carbon. Possible dissociation paths of the minimum structures were also calculated.     

A shock-tube study of the kinetics of reaction of hydroxyl radicals with H2, CO,CH4, CF3H,C2H4, and C2H6

Concentration-time profiles have been measured for hydroxyl radicals generated by the shock-tube decomposition of hydrogen peroxide in the presence of a variety of additives. At temperatures close to 1300°K the rate constants for the reaction are found to be in the ratio 0.18:0.19:0.59:1.00:2.33:2.88 for the additives CO:CF₃H:H₂:CH₄:C₂H₄:C₂H₆, respectively.     

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si₃N₄ and Si₂N₂O are formed as the nitridation products in the samples. Fibroid and short columnar Si₃N₄ are detected in the samples. The formation mechanisms of Si₃N₄ and Si₂N₂O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O₂ in N₂ atmosphere, forming a thin film of SiO₂ on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO₂ film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO₂ film will crack, and N₂ is infiltrated into the central section of the sample through cracks, generating Si₂N₂O and short columnar Si₃N₄ in situ. At the same time, metastable SiO(g) reacts with N₂ and form fibroid Si₃N₄. In the regions where the oxygen partial pressure is high, Si₃N₄ is oxidized into Si₂N₂O.     

The preparation,characterization and reactivity of the cyclometallosilane,cyclo-1,1-di-h5-cyclopentadienyltitana-2,2,3,3,4,4,5,5,-octaphenylpentasilane, (h5-C5H5)2TiSi(C6H5)2[Si(C6H5)2]2Si(C6H5)2

Titanium has been incorporated into a catenated silicon ring by means of the salt elimination reaction of dichlorodi-h⁵-cyclopentadienyltitanium(IV), (I), with 1,4-dilithiooctaphenyltetrasilane, Li₂Si₄(C₆H₅)₈, to yield the title compound (II). II was characterized as a cyclometallopolysilane by means of elemental analyses, base catalyzed hydrolyses, molecular weight determination, infrared and ¹H NMR spectroscopy. Electronic spectral data and electrochemical data are also discussed and support the formulation of II as a disubstituted (h⁵-C₅H₅)₂Ti^IV derivative. The reactivity of II, with CHCl₃, is described in terms of a radical decomposition pathway.     

Reaction of [2-(SiH3)C6H4]2SiH2 with Ni(Et2PCH2CH2PEt2)(PEt3)2: characterization of eta2-(Si-H)Ni and NiIV-H complexes

The reaction of (2-SiH3C6H4)2SiH2 with Ni(Et2PCH2CH2PEt2)(PEt3)2 afforded a new silylnickel complex, which, in the solid state, was determined to be a bis(silyl)eta2-(Si-H)nickel complex, the first example of eta2-(Si-H)nickel complex by single-crystal X-ray analysis. Variable-temperature NMR spectroscopy revealed fluxional behavior of the complex in solution; at room temperature, exchange of five hydrogens (two SiH2 and one hydrogen bound to nickel) was observed, while at -80 degrees C the exchange of hydrogens appeared frozen to adopt a tris(silyl)(hydrido)nickel(IV) structure, which was confirmed by theoretical calculation. The latter complex is the first example of hydridonickel(IV) complex.