外场中超导结的直流约瑟夫逊电流的计算

外加磁场对超导体/半导体/超导体结的临界电流有一定影响。超导结的临界电流与磁场的曲线非常类似于单色光在单狭缝衍射的夫琅和费图样。该文在未考虑外加磁场的超导体/半导体/超导体结的临界电流的基础上,进一步对外加磁场的情形进行了研究,并对其结果借助M athem atica软件做了进一步的讨论。     

交流约瑟夫逊效应与锁频现象

微波辐照下交流约瑟夫逊效应的夏皮罗台阶是非线性耗散动力学系统的锁频现象．本文在简介锁频现象的基础上，阐明夏皮罗台阶的成因．     

液氮温区体超导材料约瑟夫逊效应的实验研究

本文对液氮温区的大块体超导材料的约瑟夫逊效应进行了实验研究.我们证实在未加工成任何弱连接形式的体超导材料上也会观察到约瑟夫逊效应.这对于搞清液氮温区超导材料的特性及其应用都具有一定的参考价值.     

约瑟夫逊结中准周期通向混沌的测量

本文利用约瑟夫逊结电子模拟器测量了由二个外加交流信号源驱动的约瑟夫逊结系统从准周期通向混沌的特性,给出了当外加信号源的二个频率比值w为不同值时所对应的庞卡勒截面图和结电压的波形图;改变信号源的振幅测量了系统从准周期通向混沌的运动过程;在状态图A_1/A_(1c)～A_2/A_(2c)上,一条曲线将平面分为准周期区域和混沌区域;利用实验方法得到二个收敛常数δ和α,其值与理论计算值符合尚好。     

利用“电模拟”方法测量超导约瑟夫逊结特性的教学实验

利用“电模拟”方法测量超导约瑟夫逊结特性的教学实验范敏华，徐慧芬，吴培亨（南京大学信息物理系，２１０００８）一、引言近代技术中，以被研究系统与模型之间的数学类比为基础的电模拟装置具有实用意义，对于被研究系统中难以测量的物理量和变化规律用模拟器可进行模...     

耐熔金属约瑟夫逊隧道结制备中Nb／AlOx—Al／Nb结构质量的检验

在耐熔金属约瑟夫逊制备过程中，我们应用各种分析技术对Ｎｂ／ＡｌＯｘ－Ａｌ／Ｍｂ基本结构的质量作了检验；基于这些分析，从实验上了用直流磁控溅射制备该结构时的最佳参数。     

超导体/正常金属/半导体/正常金属/超导体结的研究

在约瑟夫逊效应的理论研究中,大体上有微观和宏观两种方法。采用的是宏观的方法。利用推广的Ja-cobson方法,讨论了超导体/正常金属/半导体/正常金属/超导体结的约瑟夫逊效应,并在小电流假设下,推导出了该结的电流密度与位相之间的关系。     

双层结构铁磁-超导隧道结的直流Josephson电流

通过求解Bogoliubov_de Gennes(BdG)方程得到铁磁超导共存态(FS)的自洽方程，在考虑结 界面的粗糙情形下，由推广的Furusaki_Tsukada(FT)的电流公式计算了铁磁超导态/ 绝缘层 / 铁磁超导态(FS/I/FS)结的直流Josephson电流，讨论了FS/I/FS结的直流Josephson临界 电流随磁交换能、温度的变化情况.研究表明：当结界面势垒散射强度和粗糙势垒散射强度 比较弱时磁交换能总是抑制FS/I/FS结的直流Josephson临界电流，而当结左右两边FS中铁 关键词： FS/I/FS超导隧道结 铁磁超导共存态 直流Josephson电流 粗糙势垒散射     

高Tc超导薄膜约瑟夫逊结光探测研究

我们研制了具有约瑟夫逊效应的高Tc GdBa₂Cu₃O₇-薄膜双晶晶界结,对其交直流约瑟夫逊效应进行了观测,并用其进行光探测,用波长为0.6328μm的He-Ne激光器辐照双晶结结区,系统观测了双晶晶界结的光响应特性,得到的最好结果如下噪音等效功率NEP=1.9×10^-13W,归一化探测率D=53×109cmHz^1/2W^-1,响应率Rv=4.2×10⁷V/W,响应时间τ=4.35×10^-7s.     

Josephson Current in f-Wave Superconductor/f-Wave Superconductor Junctions

We study the temperature T and the phase of the Josephson critical current I( φ ) by taking into account the roughness scattering effect at inerface in an f-wave superconductor (S)/Insulator layer (I)/f-wave superconductor (S) junction. It is found that the Josephson critical currents in f-wave S/f-wave S, the barrier strength and the roughness strength at inerface always suppress the Andreev reflection. When α =β, the phase dependence of theJosephson current I ( φ ) between two f-wave S is predicted to be sin φ; particularly, when α ≠β, the phase dependence of the Josephson current I( φ ) between two f-wave superconductors is not predicted to be sin φ and with the barrier strength increasing, the period of the I( φ ) turns decrease.     

Josephson Current in f-Wave Superconductor/f-Wave Superconductor Junctions

We study the temperature T and the phase of the Josephson critical current I（Ф） by taking into account the roughness scattering effect at inerface in an f-wave superconductor （S）/Insulator layer （I）/f-wave superconductor （S） junction. It is found that the Josephson critical currents in f-wave Sir-wave S, the barrier strength and the roughness strength at inerface always suppress the Andreev reflection. When α=β, the phase dependence of the Josephson current I（Ф） between two f-wave S is predicted to be sin Ф; particularly, when a α≠ β, the phase dependence of the Josephson current I（Ф） between two f-wave superconductors is not predicted to be sin Ф and with the barrier strength increasing, the period of the I（Ф） turns decrease.     

s/FI/d超导结的直流Josephson电流

在 s波超导体 /铁磁绝缘层 / d波超导体 Josephson结 (s/ FI/ d)中 ,考虑结界面铁磁绝缘层的磁散射和粗糙散射情况下 ,运用 Bd G方程和 FT的电流公式计算准粒子的输运系数及 s/ FI/ d结的直流 Josephson电流与温度 T、结两侧的相位差之间的关系。研究表明 :结界面的磁散射和粗造散射均抑制结中准粒子的 Andreev反射 ,降低了流过 s/ FI/ d结的直流 Josephson电流 ,直流Josephson电流 I随温度 T、相位差φ的变化曲线强烈地依赖于 d波超导体的晶轴方位     

Characteristics of the Surface-Intrinsic Josephson Junction

During the fabrication of intrinsic Josephson junctions (IJJs) with Bi₂Sr₂CaCu₂O_8+δ (BSCCO) single crystals, the superconductivity of the surface Cu-O layer is degraded because of a deposited metal film on top of the stack. Thus, the characteristics of the surface junction consisting of the surface Cu-O double layers remarkably differ from those of the junctions deep in the stack, which will be referred to as ordinary IJJs. The electrical transport characteristics of the surface junction, such as I-V, I _c′-T, and R-T, show that the critical temperature T _c′ of the surface junction is always lower than that of ordinary IJJs, and that the change of its critical current I _c′ with temperature is different from that of ordinary IIJs. Furthermore, by shunting the surface junction resistively, we are able to observe the AC Josephson effect at 3-mm waveband. Translated from Chinese Journal of Low Temperature Physics, 2005, 27(2) (in Chinese)     

dc Josephson Effect in s-Wave Superconductor/Ferromagnet Insulator/p-Wave Superconductor Junctions

The Josephson currents in s-wave superconductor/ferromagnet insulator/p-wave superconductor（s/FI/p） junctions are calculated as a function of temperature and the phase taking into account the roughness scattering effect at interface. The phase dependence of the Josephson current I （φ） between s-wave and px-wave superconductor is predicted to be sin（2φ）. The ferromagnet scattering effect, the barrier strength, and the roughness strength at interface suppress the dc currents in s/FI/p junction.     

Josephson Current in Superconductor-Ferromagnet/Insulator/d-Wave Superconductor Junctions

Solving the Bogoliubov-de Gennes equation, the energy levels of bound states are obtained in the ferromagnetic superconductor. The Josephson currents in a ferromagnetic superconductor/Insulator/d-wave superconductor junction are calculated as a function of the exchange field, temperature, and insulating barrier strength. It is found that the Josephson critical current is always suppressed by the presence of exchange field h and depends on crystalline axis orientation of d-wave superconductor.     

全铌超导Josephson结的EWB仿真模型

通过超低温实验直接测量了制备的全铌Josephson结的电压源驱动RCSJ模型的I-V特性曲线。建立了Josephson结在电路仿真软件EWB中的模型,极大的方便了Josephson结及相关电路的仿真研究。利用这一新模型对Josephson结的基本特性进行了较为系统的研究,包括RSJ模型和RCSJ模型的直流驱动I-V特性曲线。