基于纯水可饱和吸收体的1.9μm波段被动调Q和锁模掺铥光纤激光器

构建了纯水作为可饱和吸收体的被动调Q和锁模掺铥光纤激光器.通过陶瓷套管将纯水固定在两个光纤跳线头之间,调整水层厚度可以分别实现调Q和锁模操作.调Q状态下的最大输出功率为0.531 mW,此时的重复频率为53.45 kHz,脉冲宽度为3.01μs.锁模状态下的最大输出功率为2.28 mW,重复频率为17.69 MHz,脉冲宽度为1.42 ps.本文使用纯水作为可饱和吸收体的被动锁模光纤激光器,其具有皮秒级的响应时间、低廉的价格和极高的损伤阈值,可为掺铥全光纤脉冲激光器提供一种新方案.     

基于1064nm光纤皮秒种子源的Nd:YAG再生放大器

利用Nd:YAG再生放大器,对1064 nm掺镱锁模全光纤激光器输出的皮秒脉冲进行了功率放大.研究分析了掺镱锁模全光纤激光器输出脉冲对Nd:YAG再生放大器能量提取效率的影响,通过对掺镱锁模全光纤激光器自相位调制的控制,减少了输出光谱的振荡结构,提高了掺镱锁模全光纤激光器对Nd:YAG再生放大器的能量提取效率,实现了对锁模全光纤激光器输出的中心波长1064.4 nm,3 dB光谱宽度0.35 nm、脉宽11 ps、单脉冲能量为3.2 nJ、频率为38 MHz的锁模脉冲的再生放大,得到输出重复频率为1 kHz,最大的单脉冲能量为1.3 mJ的皮秒脉冲.     

基于MoO_3可饱和吸收体的掺镱被动锁模光纤激光器

报道了一种基于MoO_3可饱和吸收体的连续锁模、调Q锁模掺镱光纤激光器.采用环形腔结构,在泵浦功率为95mW时,获得了稳定的重复频率为17MHz的连续锁模脉冲输出,单脉冲宽度为130ps,光谱中心波长为1 067.06nm,谱线3dB带宽为0.27nm.在泵浦功率为280mW时,产生稳定的调Q锁模脉冲输出.当泵浦功率从280mW变化到400mW的过程中,调Q锁模包络重复频率从26.51kHz变化到48.7kHz,包络半高宽度从14.6μs变化到4.1μs,子脉冲的宽度和光谱中心波长基本保持不变,谱线3dB带宽变为0.62nm.     

高重复频率飞秒光纤激光技术进展

简要回顾了飞秒光纤激光技术的发展,并报道了高重复频率光纤激光器的最新进展.通过模拟计算,证明高重复频率下锁模脉冲有随光纤缩短而变窄的趋势.选用合理的光学元件、光纤长度和色散匹配,研制出重复频率为330 MHz的掺铒光纤激光器,490 MHz的色散控制掺镱光纤激光器和600 MHz重复频率的全正色散掺镱光纤激光器.此类光...     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

宽光谱全正色散锁模掺镱光纤激光器

介绍了一种全正色散宽光谱被动锁模掺镱光纤激光器,利用非线性偏振旋转技术实现全正色散掺镱光纤激光器的被动锁模.当泵浦功率输出为500mW时,激光脉冲输出功率大于139mW,重复频率约为28.1MHz,脉冲宽度为3.8ps.为了进一步研究全正色散光纤激光器的宽光谱输出特性,在腔内熔接50m单模光纤,同时去除双折射滤波片,在泵浦功率为500mW时,观察到稳定锁模单脉冲耗散孤子,光谱范围为1 005~1 140nm,输出激光脉冲最大平均功率为90mW,重复频率为3.58MHz,脉冲宽度为519ps.     

全光纤超短脉冲掺Yb3+光纤环形激光器

讨论了自启动被动锁模掺Yb³⁺光纤环形激光器产生短脉冲的机理，并研制出全光纤结构超短脉冲掺Yb³⁺光纤环形激光器.采用两个976nm半导体激光器级联抽运作为抽运源，高掺杂浓度掺Yb³⁺光纤作为增益介质，利用光纤的非线性偏振旋转效应，得到自启动、十分稳定的ps量级锁模光脉冲.激光器锁模阈值功率260mW，输出功率25mW，锁模光脉冲中心波长1056nm，3dB带宽11.7nm，重复频率20MHz.与其他结构光纤激光器相比，这种全光纤结构具有更高的效率和更好的稳定性. 关键词： 环形光纤激光器 3+光纤')" href="#">高掺杂浓度掺Yb³⁺光纤 自启动 被动锁模     

自调Q、自锁模铒/镱共掺光纤激光器

研究了结构新颖的环形腔铒/镱（Er/Yb）共掺双包层光纤激光器.为了获得高功率激光输出,使用6个激光二极管（LD）同时抽运Er/Yb共掺光纤,采用光纤光栅（FBG）Sagnac环作为波长选择器,得到了中心波长为1548.11 nm、谱线宽度为0.06 nm的窄线宽激光输出;并利用增益光纤作为可饱和吸收体,实现了自调Q、自锁模脉冲输出.当抽运功率为719 mW时,激光器输出自调Q脉冲,脉冲周期为20μs,脉冲宽度为2.8μs,脉冲的平均功率为38.4mW,峰值功率为274.3mW;当抽运功率为3.6 W时,激光器输出自锁模脉冲,脉冲宽度为4ns,平均功率为319 mW,脉冲峰值功率大于10 W,重复频率为7.937 MHz.     

重复频率1.2 GHz皮秒脉冲全光纤掺镱激光器

研究实现了基于半导体可饱和吸收体被动锁模的高重频全光纤掺镱皮秒脉冲激光器.种子源采取环形腔结构,当抽运功率为112mW时,获得了稳定的锁模脉冲激光,其中心波长为1 064.1nm,3dB谱宽为3.6nm,脉冲宽度为4.2ps,重复频率为19.2MHz.受限于谐振腔长度,光纤激光器重复频率很难得到进一步提高.因此设计并搭建了一种基于分束器和延时光纤的全新低损耗高重频脉冲调制器,将种子激光重复频率提高到1.2GHz.该设计有效降低了脉冲在耦合过程中的能量损耗,为提高全光纤超短脉冲激光器重复频率提供了新途径.     

100 W全光纤声光调Q光纤激光器实验研究

 报道了一台全光纤结构主振荡功率放大(MOPA)型掺镱脉冲光纤激光器,以光纤光栅为腔镜,光纤型声光调Q的光纤激光器为种子源,通过两级掺镱双包层光纤放大器实现功率放大。对声光调Q的光纤激光器输出特性进行了研究,比较了不同泵浦波长、不同重复频率对激光输出功率和脉冲宽度的影响,并实现了最短脉冲宽度25 ns、单脉冲能量45 μJ的脉冲激光输出。在重复频率50 kHz时,对脉冲宽度130 ns、平均功率0.6 W的种子光进行放大,得到了平均功率102.5 W、脉冲宽度约240 ns的激光输出。     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

基于WS2可饱和吸收体的脉冲激光器研究

利用WS₂的可饱和吸收特性,在激光二极管侧面抽运Nd:YAG固体激光器Z型腔结构中分别实现了被动调Q和被动调Q锁模运转。实验表明:当泵浦电流为9.5 A时,开始启动调Q运转,当泵浦电流大于9.8 A时,调Q激光脉冲趋于稳定。当泵浦电流为12.8 A时,被动调Q输出的最大平均功率为466 mW,最窄脉冲宽度为3.205 μs,对应的重复频率为71.70 kHz,此时最大单脉冲能量为6.5 μJ。当泵浦电流达到13.4 A时,激光器实现调Q锁模运转。调Q锁模的最高输出功率为590 mW,调Q包络频率为71.98 kHz,单个调Q包络内的脉冲串重复频率123.1 MHz,每个调Q包络中包含369个脉冲,单脉冲能量为22.2 nJ。结果表明WS₂材料可以作为可饱和吸收体用于固体激光器中。     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Simultaneous mode locking in an acousto-optic Q-switched Nd:LuVO4 laser

Simultaneous mode locking had been obtained in acousto-optic Q-switched Nd:LuVO₄ laser by using a Z-type cavity. Pulses with great average output power and narrow pulse width were observed in our experiment. The modulation depth is nearly 90% and the width of Q-switched envelope is about 70 ns, and both maintained constant with the increase of pump power. The maximum average output power of 1.83 W was obtained when the incident pump power was 6.78 W and the Q-switched envelop repetition frequency was 30 kHz. Also the average pulse width of the mode locking among the Q-switched envelope is estimated to be about 200 ps.     

LD-pumped 1.34 μm-Q-switched and mode-locked Nd:GdVO4 laser by a V3+:YAG saturable absorber

A diode-pumped passively Q-switched and mode-locked Nd:GdVO₄ laser at 1.34 μm with V³⁺:YAG as the saturable absorber is realized in a V-type folded cavity. About 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The width of the mode-locked pulse is estimated to be less than 280 ps with 200 MHz repetition rate within an about 980 ns-long Q-switched pulse envelope. A maximum output power of 200 mW and Q-switched pulse energy of 5.7 μJ is obtained.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Passively Q-Switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser with sandwich structured wallpaper graphene oxide absorber

We report on a passively Q-switched and mode-locked Nd:YVO₄ laser using a novel low-cost wall-paper graphene oxide absorber. Sandwich structured wallpaper graphene oxide absorber was constructed by a high transmission mirror, a piece of wallpaper graphene oxide absorber and a reflective mirror. The average output power of 310 mW of passively Q-switched and mode-locked laser was successfully achieved. The repetition rate and pulse width of the Q-switched envelope were 213 kHz and 770 ns, respectively. The repetition rate of passively mode-locked pulse within the Q-switched envelope was 81.3 MHz with the pulse energy of 3.8 nJ.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.