射频等离子体辅助化学气相沉积方法生长碳纳米洋葱

用射频等离子体辅助化学气相沉积方法生长碳纳米洋葱.电子显微镜观察表明,产物中无碳纳米管等伴随生成,因而制得了较高产率、较高纯度的纳米洋葱.尤其是Co-SiO₂催化剂生长的碳纳米洋葱,实心、光滑,且内无催化剂颗粒,其外层由未闭合的、呈波浪状的石墨片构成,显示出与众不同的微观结构和性能.提出了该方法中碳纳米洋葱的生长机理为碳笼由里向外嵌套形成球形粒子.对波浪状、非闭合结构的形成过程进行了讨论. 关键词： 射频等离子体 化学气相沉积 碳纳米洋葱     

直流电弧等离子体射流CVD制备多种碳膜

本文报道了在同一直流电弧等离子体射流ＣＶＤ装置上，采用不同的沉积条件高速合成金刚石，类金刚石，高取向热解石墨以及无定形碳等四种碳膜。经Ｘ射线衍射（ＸＲＤ），拉曼散射谱（Ｒａｍａｎ），扫描电镜（ＳＥＭ）形貌分析以及显微硬度测试表明，该方法制得的金刚石膜和高取向热解石墨膜具有很高的纯度和良好的晶性，类金刚石具有独特的形貌和Ｒａｍａｎ散射特征以及可与金刚石膜比拟的硬度。     

直流辉光等离子体辅助热丝CVD法沉积金刚石薄膜

采用直流辉光等离子体助进热丝化学气相沉积（CVD）的方法,低温（550－620℃）沉积得到晶态金刚石薄膜,经X射线衍射谱（XRD）,扫描电子显微镜（SEM）分析表明,稍高气压有利于金刚石薄膜的快速,致密生长。     

射频等离子体对气相生长碳纳米纤维的氧化改性

"采用不同流量比率的氧气和氩气作为载气,氧化修饰气相生长碳纳米纤维(VGCNFs)．傅立叶红外光谱、热重以及Boehm's滴定法分析结果表明,当氧气含量为4%时,碳纤维表面生成有大量O-H官能团;然而,当氧气含量增加为5%时,在其表面不仅生成有-OH官能团,而且还有-CHx、-CO等官能团出现,说明在适当的氧浓度条件下有利于VGCNFs修饰;但氧气含量继续增加到8%时,其纤维内层石墨晶格氧化断裂,微晶结构被破坏．"     

等离子体增强化学气相沉积氮化碳薄膜过程中的光学发射谱研究

利用光学发射谱技术对直流辉光放电等离子体增强的化学气相沉积氮化碳薄膜过程中的等离子体进行了原位诊断,结果表明主要的辐射有N2的第二正系跃迁、N2^ 的第一负系跃迁、CN和NH的紫外跃迁。研究了气源中氢气含量、放电电流及沉积气压的变化对N2（337.1nm),N2^ (391.4nm)和CN(388.3nm)辐射强度的影响,并在此基础上探讨了这几种跃迁的激发机制,其结果为氮化碳合成中优化沉积参数、控制实验过程提供了依据。     

高能等离子体辅助CVD法新型纳米碳膜的制备及分析

利用自制高能等离子体辅助化学气相沉积设备在1Cr18Ni9Ti衬底上，在离子能量2keV、工作压力2Pa、工作气氛为CH₄/H₂=10%的工艺条件下得到了一种硬度高、导电性能良好、可能具有碳链结构的新型碳膜.工艺研究结果表明，衬底材料对制备该新型纳米碳膜具有关键作用，离子能量、工作压力及气氛等工艺因素也具有重要作用.原子力显微镜分析结果表明，该薄膜晶粒尺寸小于100nm，薄膜光滑、致密、均匀.拉曼光谱分析显示，该薄膜的拉曼光谱特征为中心峰在1580cm ^{关键词： 高能等离子体 CVD法 纳米碳膜 衬底材料}     

Carbon fractals grown from carbon nanotips by plasma-enhanced hot filament chemical vapor deposition

Carbon nanomaterials with different structures were prepared in a custom-designed plasma-enhanced hot filament chemical vapor deposition system using methane, hydrogen and nitrogen. They were investigated by scanning electron microscopy (SEM) and micro-Raman spectroscopy. The SEM images show that the smooth carbon nanotips are formed under a high bias current and the carbon fractals can grow from the tips of the carbon nanotips under a low bias current. The results of micro-Raman spectroscopy indicate that the graphitization of the carbon nanomaterials was improved by ion bombardment. Combined the ion bombardment, electric field enhancement and electron emission mechanisms, the formation model of the carbon fractals was suggested.     

化学气相沉积法制备定向碳纳米管阵列

以二茂铁和二甲苯分别作为催化剂和碳源，采用一种无模板的化学气相沉积法，使用单温炉设备，成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征, 并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明：在生长温度为800℃，催化剂浓度为0.02g/mL，抛光硅片上容易获得高质量的定向碳纳米管阵列，在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.     

等离子体增强化学气相沉积法实现硅纳米线掺硼

用等离子体增强化学气相沉积(PECVD)方法成功实现硅纳米线的掺B.选用Si片作衬底，硅烷 （SiH4）作硅源，硼烷（B2H6）作掺杂气体， Au作催化剂，生长温度440℃.基于气-液-固(VLS)机制，探讨了掺B硅纳米线可能的生长机制.PECVD法化学成分配比更灵活，更容易实现纳米线掺杂，进一步有望生长硅纳米线pn结，为研制纳米量级器件提供技术基础. 关键词： 硅纳米线 化学气相沉积 纳米器件     

Preparation of carbon nanosheets deposited on carbon nanotubes by microwave plasma-enhanced chemical vapor deposition method

Carbon nanosheets were synthesized by microwave plasma-enhanced chemical vapor deposition method on carbon nanotubes substrate which was treated by hydrogen plasma. The results showed that the diameters of carbon nanotubes first got thick and then “petal-like” carbon nanosheets were grown on the outer wall of carbon nanotubes. The diameters of carbon nanotubes without and with carbon nanosheets were 100-150 and 300-500 nm, respectively. Raman spectrum indicated the graphite structure of carbon nanotubes/carbon nanosheets. The hydrogen plasma treatment and reaction time greatly affected the growth and density of carbon nanosheets. Based on above results, carbon nanosheets/carbon nanotubes probably have important applications as cold cathode materials and electrode materials.     

Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, transistors, and sensors. The growth of CNTs can be explained by interaction between small carbon patches and the metal catalyst. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH₃) as a pretreatment gas and acetylene (C₂H₂) as a carbon source gas. The grown CNTs and the pretreated DLC films were observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.     

纳米TiO2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明：制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300 ℃沉积的薄膜是无定形的,300 ℃之上沉积的薄膜是锐钛矿结构。     

甚高频等离子体增强化学气相沉积制备微晶硅太阳电池的研究

采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明：在实验的硅烷浓度和功率范围内，随硅烷浓度的降低和功率的加大，对应电池的开路电压逐渐变小；硅烷浓度的不同对电池的短路电流密 度有很大的影响，但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池，N层最好 是非晶硅，这是因为一方面可以降低对电流的横向收集效应，另一方面也降低了电池的漏电概率，提高了电池的填充因子. 关键词： 微晶硅太阳电池 甚高频等离子体增强化学气相沉积     

场致发射阴极碳纳米管的热化学气相沉积法低温生长

结合丝网印刷和过滤阴极真空电弧法、离子束溅射方法，在普通玻璃衬底上制备催化剂图案，采用低温热化学气相沉积法(CVD)生长碳纳米管/纤维(CNTs)薄膜.研究了不同种类催化剂对CNTs薄膜生长及其场发射的影响.结果表明，在a-C:Co,Ni-Cu和Cu三种催化剂上没有获得明显的CNTs，在外加电场小于4.4V/μm时没有观察到场发射；而在Ni-Fe及Ni-Cr两种催化剂上获得了大量的CNTs，并且表现出良好的场发射性能，开启电场为2.5V/μm，这种热CVD有简单、低温等优点，在CNTs场发射显示器的阴极制备中有潜在的应用价值.     

Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.     

Controllable growth of individual, uniform carbon nanotubes by thermal chemical vapor deposition

We report on the controllable growth of individual, uniform carbon nanotubes using thermal chemical vapor deposition (CVD). We performed a detailed study of the various factors influencing the growth of single nanotubes. In particular, we investigated the role played by catalyst layer thickness, catalyst dot size, deposition temperature, and gas source pressure on the growth process of straight, single nanotubes. Straight, individual nanotubes with uniform diameter can be obtained by decomposition of 0.1 mbar of acetylene at a temperature of 800 °C over a 5 nm thick nickel film that is patterned into square dots with dimensions below 500 nm. We compare the performance of thermal CVD and of plasma enhanced CVD for growing individual nanotubes.