Methane chemical vapor deposition on transition metal/GaAs samples – a possible route to Haeckelite carbon nanotubes?

We present a systematic study of atmospheric chemical vapor deposition growth of carbon nanotubes (CNTs) on patterned, transition metal/GaAs samples employing methane as the carbon feedstock. Controlled CNT growth was found to occur from the exposed metal‐semiconductor interface, rather than from the metal or semiconductor surfaces themselves. A fast sample loading system allowed for a minimization of the exposure to high temperatures, thereby preventing excessive sample damage. The optimum growth temperature for CrNi/GaAs interfaces is 700 °C (at a methane flow rate of 700 sccm). Possible growth scenarios involving the Ni–As–Ga system and its interaction with C is discussed. Raman spectroscopy of the CNTs revealed the presence of pentagon–heptagon defects. Closer analysis of the spectra points towards a mixture of so‐called Haeckelite CNTs. Copyright © 2011 John Wiley & Sons, Ltd.     

n型金刚石薄膜催化生长碳纳米管

研究了n型金刚石薄膜作为催化剂生长碳纳米管的方法.首先采用丙酮裂解化学气相沉积(CVD)法制备均匀的n型金刚石薄膜,然后采用乙醇为碳源的CVD法,在850、900和950℃下,分别在n型金刚石薄膜上制备了碳球、竹节状碳管和多壁碳纳米管.所得产物用扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线光电子能谱表征.实验结果表明产物的形貌与反应温度有关.我们还提出了与金刚石催化生长碳纳米管结果相符的实验机理.     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

Production of Carbon Nanotubes on Different Metal Supported Catalysts

Multiwall carbon nanotubes have been prepared by catalytic chemical vapor deposition (CCVD) method in high yield using various metals supported on different supports. Measurements by transmission electron microscopy (TEM) revealed the presence of high quality nanotubes on each catalyst, however, comparing the different catalysts in nanotube production it can be stated that beyond metals, the support also affects both the quality and the quantity of nanotubes.     

分叉碳纳米管的催化生长

Branching carbon nanotubes were synthesized by pyrolysis of acetylene at 700℃ over oxygen-free copper and γ-Al₂O₃-supported Cu unitary or Cu/Fe binary catalysts. The morphologies of the as-grown products were charac-terized by transmission electron microscopy. The results indicated that the branching structures were closely related to the Cu component of the catalysts. We proposed that the special electronic structure (3d¹⁰4s¹) of Cu play the crucial role in the formation of the heptagon defects related to the branching structures.     

硅纳米线的化学气相沉积法合成

硅纳米线是近十几年来在纳米科学与技术领域快速发展的一种重要材料．通过精细的结构设计与材料合成,硅纳米线在生物传感、锂离子电池、太阳能电池和光电化学等领域展示出良好的应用前景．化学气相沉积（CVD）法是一大类重要的自下而上合成硅纳米线方法．本文简介了CVD法合成硅纳米线的主要进展,包括具有单一结构和复合结构的硅纳米线的合成．其中,单一结构的硅纳米包括本征（无掺杂）、掺杂和超长的硅纳米线;复合结构的硅纳米线包括轴向异质结、径向异质结、转折结构和树枝状结构的硅纳米线．     

Chemical catalytic vapor deposition (CCVD) synthesis of carbon nanotubes by decomposition of ethylene on metal (Ni, Co, Fe) nanoparticles

A simple method for producing unsupported nickel catalyst that can be used to synthesize multi-wall carbon nanotubes (MWNT) has been developed. The yield of purified MWNTs is about 1.8 g_mwnt/(g_cat×h).     

竹节状碳纳米管有序阵列的合成和表征

用1,4-偶氮二异丁基腈作碳源,以载有催化剂Co的多孔Al₂O₃膜作模板,用化学气相沉积法在较低温度(600℃)下方便地制得了单分散碳纳米管有序阵列。透射电子显微分析表明,所得碳纳米管的形态为竹节形状,端口是闭合的,这和同样用Al₂O₃膜作模板但以乙烯或乙炔作碳源热分解制得的中空碳纳米管的情形明显不同。对该纳米管的生成机理进行了初步探讨。     

Chemical vapor deposition of metal borides: 6. The formation of neodymium boride thin film materials from polyhedral boron clusters and metal halides by chemical vapor deposition

The chemical vapor deposition (CVD) of crystalline thin films of neodymium hexaboride (NdB₆) was achieved using either nido ‐pentaborane(9) or nido ‐decaborane(14) with neodymium(III) chloride on different substrates. The highly crystalline NdB₆ films were formed at relatively moderate temperatures (835 °C, ca. 1 µm/h) and were characterized by scanning electron microscopy, X‐ray emission spectroscopy, X‐ray diffraction and glow discharge mass spectrometry. The NdB₆ polycrystalline films were found to be pure and uniform in composition in the bulk material. Depositions using CoCl₂, NdCl₃ and B₅H₉ as the CVD precursors resulted in the formation of a mixture of NdB₆ and CoB phases, rather than the ternary phase. Copyright © 2008 John Wiley & Sons, Ltd.     

Organometallic chemical vapor deposition using allyl precursors

Homoleptic allyl derivatives of many Main-Group and transition metals, M(C₃H₅)_n, are readily available through one-pot syntheses using metal halides and allyl Grignard reagents or by alkylation of alkali-metal salts. The relatively low molecular weight of a C₃H₅ ligand contributes to high vapor pressures whilst the stability of the allyl radical is predicted to reduce decomposition temperatures. These compounds represent a class of volatile precursors for organometallic chemical vapor deposition (OMCVD) of thin films. Film growth studies using iridium, molybdenum, palladium, platinum, rhodium, selenium, tellurium and tungsten compounds are reviewed and the relationships between pyrolysis pathways and film purity are discussed.     

A general atmospheric pressure chemical vapor deposition synthesis and crystallographic study of transition-metal sulfide one-dimensional nanostructures

A series of transition-metal sulfide one-dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour-liquid-solid (VLS) and vapour-solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (1 0 0), (1 1 0), or (0 0 x) directions owing to particular crystal structures. The adopted synthetic route was expected to provide abundant useful 1D building blocks for the research of mesoscopic physics and fabrication of nanoscale devices.     

Atmospheric pressure chemical vapor deposition: an alternative route to large-scale MoS2 and WS2 inorganic fullerene-like nanostructures and nanoflowers

Large-scale MoS2 and WS2 inorganic fullerene-like (IF) nanostructures (onionlike nanoparticles, nanotubes) and elegant three-dimensional nanoflowers (NF) have been selectively prepared through an atmospheric pressure chemical vapor deposition (APCVD) process with the reaction of chlorides and sulfur. The morphologies were controlled by adjusting the deposition position, the deposition temperature, and the flux of the carrier gas. All of the nanostructures have been characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). A reaction mechanism is proposed based on the experimental results. The surface area of MoS2 IF nanoparticles and the field-emission effect of as-prepared WS2 nanoflowers is reported.     

纳米碳管电极的制备与电化学检测性能研究

纳米碳管由于其独特的物理和化学性能及广阔的应用前景而备受关注,其相关研究涉及到众多领域[1￣3]。在电化学分析领域,与其它碳电极材料相比,纳米碳管电极具有较大的电极表面积和较高的电子传递速率,其使用能增大响应电流、降低检出限,是目前电化学分析电极中一个十分引人注目     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.     

The Synergistic Effect of a Bimetallic Catalyst for the Synthesis of Carbon Nanotube Aerogels and their Predominant Chirality

Synthesis of continuous spinnable carbon nanotube (CNT) fibers is the most promising method for producing CNT fibers for commercial applications. The floating-catalyst chemical vapor deposition (FC-CVD) method is a rapid process that achieves catalyst formation, CNT nucleation and growth, and aerogel-like sock formation within a few seconds. However, the formation mechanism is unknown. Herein, the progress of CNT fiber formation with bimetallic catalysts was studied, and the effect of catalyst composition to CNT fiber synthesis and their structural properties was investigated. In the case of bimetallic catalysts, the carbon source rapidly decomposes and generates various secondary hydrocarbon species, such as CH₄, C₂H₄, C₂H₂, C₃H₆, and C₄H₁₀ whereas monometallic catalysts generate only CH₄ and C₂H₄ on decomposition. CNT fiber formation with Fe₁Ni₀ begins about 400 mm from the reactor entrance, whereas CNT formation with Fe_0.8Ni_0.2 and Fe_0.5Ni_0.5 begins at about 500 and 300 mm, respectively. The formed CNT bundles and individual CNTs are oriented along the gas flow at these locations. The enhanced rate of fiber formation and lowering of growth temperature associated with bimetallic catalysts is explained by the synergistic effects between the two metals. The synthesized CNTs become predominantly semiconducting with increasing Ni contents.