CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy

Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

The properties of BCN films formed by ion beam assisted deposition

A study has been made on the formation and the properties of boron carbonnitride (BCN) thin films. The BCN films were produced by ion beam assisted deposition, in which boron and carbon were deposited by electron beam heating and nitrogen was supplied by ion implantation simultaneously. The mechanical properties of BCN films were measured using a ultra micro hardness tester and a friction tester. The atomic ratio and the structure of BCN thin films were estimated by means of X-ray photoelectron spectroscopy, laser Raman spectroscopy and Fourier transform infrared spectroscopy. As preliminary results, it was found that the BCN films are higher in hardness and lower in friction coefficient than diamond-like carbon (DLC) films. The mechanical properties are discussed with the relation of surface composition and structure.     

Mechanical properties degradation of polyimide films irradiated by atomic oxygen

Mechanical properties of polyimide films are degraded by exposure to a low earth orbit environment. The main environmental factor for that degradation is atomic oxygen (AO). Using tensile tests, AO-irradiated surface topography observations, and fracture surface analyses, this study investigated the degradation behavior of polyimide films’ mechanical properties by increased AO fluence and its accompanying degradation mechanisms. Tensile strength and elongation of polyimide films were reduced concomitantly with increased AO fluence. Furthermore, AO-irradiated polyimide films fractured from the AO-irradiated surfaces, of which roughness became marked as AO fluence increased. These results reflect that reduction of mechanical properties is attributable to the roughness increase in AO-irradiated surfaces. Polyimide films coated with indium tin oxide (ITO) were also evaluated to confirm the degradation behavior of AO protective films. Surfaces of ITO-coated polyimide films remained smooth even after AO irradiation. However, undercut cavities were formed at ITO coating defect sites. Rupture of ITO-coated polyimide films initiates from the undercut cavities, engendering large reduction of tensile strength and elongation. The degradation of the mechanical properties of ITO-coated polyimide films increased substantially until the undercut cavities fully penetrated the film.     

Evolution of the local structure in GaN:O thin films grown by ion‐assisted deposition with film thickness

Optical and optoelectronic properties of gallium nitride strongly depend on the synthesis procedure, which may be related to specific structural characteristics of GaN inherent to each preparation condition. Amorphous and nanocrystalline GaN films have been prepared by ion‐assisted deposition (IAD). The films prepared at 10^?5 Torr for <50 min have shown exploitable optoelectronic properties, in spite of the high concentration of oxygen of these films (up to 25 at.%). We study here the evolution of the local structure around Ga atoms as the deposition time increases. Five IAD GaN films of thickness ranging between 140 and 450 nm on silicon substrates were analysed by x‐ray absorption fine structure (XAFS) at the Ga K‐edge. The first and second shells of neighbouring atoms are clearly identified in the radial distribution functions at approximately 1.9 and 3.2 Å, respectively. In all of the films, Ga seems to be tetrahedrally coordinated to four nitrogen atoms, some of which may be substituted by oxygen. For deposition times <50 min, analysis of both x‐ray adsorption near‐edge structure (XANES) and extended x‐ray adsorption fine structure (EXAFS) regions indicates that the material is highly amorphous. Above this threshold, a peak corresponding to the first coordination sphere of Ga atoms becomes discernible and increases in intensity for longer deposition times, indicating that the second shell of atoms is now more ordered. The pseudo Debye–Waller factor of the Ga shell is used for monitoring the average degree of amorphization in an ～100 nm thick top layer, which seems to be related to the film oxygen content. The XAFS results are compatible with a layered distribution of crystallinity, as has been suggested previously for these films. Copyright © 2005 John Wiley & Sons, Ltd.     

Mesoporous metal oxides by vapor infiltration and atomic layer deposition on ordered surfactant polymer films

Catalysis, chemical separations, and energy conversion devices often depend on well-defined mesoporous materials as supports or active component elements. Herein, we show that ordered assembled organic surfactant films can directly template porous inorganic solids with surface area exceeding 1000 m(2)/g by infusing the polymers with reactive inorganic vapors, followed by anneal. The specific surface area, pore size, chemical composition, and overall shape of the product material are tuned by choice of the polymer and precursor materials as well as the influsion and postinfusion treatment conditions. X-ray diffraction, infrared spectroscopy, and electron microscopy show that vapor infusion changes both the physical and chemical structure of the starting ordered polymer films, consistent with quantified trends in specific surface area and pore size distribution measured by nitrogen adsorption after film annealing. This method yields porous TiO(2) films, for example, that function as an anode layer in a dye-sensitized solar cell.     

Substrate assisted electrochemical deposition of patterned cobalt thin films

The patterned Co layers deposited on the scratched Cu surfaces were investigated with the use of the scanning electron microscopy. Patterned cobalt thin films were electrochemically deposited from the cobalt sulfate bath at room temperature. Pattering of cobalt was carried out by simple means of substrate scratching. Gentle scratching induces a direct pattering of cobalt from vertical to horizontal. The prepared pattered films were characterized for their structural, surface morphological and compositional properties by means of X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. X-ray diffraction studies reveal that the films are of cobalt. From the SEM images fabrication of patterns of cobalt is apparent. This work demonstrates a novel approach for obtaining patterned cobalt for many technological applications.     

Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition

A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.     

Influence of High-energy electron-beam on photocatalytic activity of TiO2 films on carbon-fiber deposited by atomic layer deposition

High-energy electron-beam with energy of 1 MeV was used for modifying surface structure of TiO₂ thin films on carbon fiber prepared by using atomic layer deposition under atmospheric pressure. TiO₂ nanoparticles (∼20 nm) on carbon fiber underwent structural modification of the surface upon electron-beam treatment, resulting in enhanced photocatalytic activity. In contrast, a thicker film of TiO₂ did not show such changes in surface structure and photocatalytic activity by electron-beam treatment. We demonstrate that electron-beam can be used for modifying surface structure of photocatalysts consisting of nanoparticles for improvement of their activity.     

Stability of atomic oxygen chemisorption on Pt‐alloy surfaces

A density functional theory calculation is used to investigate the atomic oxygen (O) stability over platinum (Pt) and Pt‐based alloy surfaces. Here, the stability is connected with the preferential adsorption sites for O chemisorptions and the adsorption energy. Thus, the interaction mechanism between atomic O and metal surfaces is studied by using charge transfer analysis. In this present paper, atomic structure and binding energy of oxygen adsorption on the Pt(111) are in a very good agreement with experiment and previous density functional theory calculations. Furthermore, we obtained that the addition of ruthenium (Ru) and molybdenum (Mo) on the pure Pt surface enhances the adsorption energy. Our charge transfer analysis shows that the largest charge transfer contributing to the metal‐O bonding formation is observed in the case of O/PtRuMo surface followed by O/PtRu surface. This is in consistency with metal d‐orbital characteristic, where Mo has much more empty d‐orbital than Ru in correspondence to accept electrons from atomic oxygen. Copyright © 2016 John Wiley & Sons, Ltd.     

Polymorphism and phase control in titanyl phthalocyanine thin films grown by supersonic molecular beam deposition

Polymorphism in the growth of titanyl phthalocyanine films on dielectric substrates has been systematically studied by UV absorption and micro-Raman analyses, correlating structure and optical properties. We explored different growth regimes as a function of substrate temperature and growth rate using hyperthermal seeded supersonic beams. We identify and discuss specific signatures in micro-Raman spectra specifically correlated to the different phases and demonstrate the unprecedented ability of growing crystalline films and controlling the relative abundance of the different phases (amorphous, phase I, and phase II) by the beam parameters. We envisage the very promising perspective of controlling polymorphism at low temperatures via supersonic beam growth, paving the way for better performing devices.     

Active sites engineering of Pt/CNT oxygen reduction catalysts by atomic layer deposition

Understanding carbon-supported Pt-catalyzed oxygen reduction reaction(ORR)from the perspective of the active sites is of fundamental and practical importance.In this study,three differently sized carbon nanotube-supported Pt nanoparticles(Pt/CNT)are prepared by both atomic layer deposition(ALD)and impregnation methods.The performances of the catalysts toward the ORR in acidic media are comparatively studied to probe the effects of the sizes of the Pt nanoparticles together with their distributions,electronic properties,and local environments.The ALD-Pt/CNT catalysts show much higher ORR activity and selectivity than the impregnation-Pt/CNT catalysts.This outstanding ORR performance is ascribed to the well-controlled Pt particle sizes and distributions,desirable Pt^04f binding energy,and the Cl-free Pt surfaces based on the electrocatalytic measurements,catalyst characterizations,and model calculations.The insights reported here could guide the rational design and fine-tuning of carbon-supported Pt catalysts for the ORR.     

Electrochemical deposition and characterization of iridium oxide films on Ti2AlC support for oxygen evolution reaction

Journal of Solid State Electrochemistry - Two types of iridium oxide films formed at the Ti2AlC substrate were investigated: (1) anodically electrodeposited iridium oxide film from the solution...     

Tetracene thin films grown by organic molecular beam deposition under a static magnetic field

The diamagnetic response of tetracene is exploited to increase the in-plane orientation of thin films grown by organic molecular beam deposition, while applying a magnetic field of 0.2 T parallel to the surface of the silica and potassium hydrogen phthalate substrates. The combined spectroscopic analysis of the films in the UV/visible region and morphological investigation of their surface performed by atomic force microscopy demonstrate a substantial increment of the film order when the magnetic field is applied along the c axis of potassium hydrogen phthalate, in agreement with the anisotropic magnetic susceptibility of tetracene.     

Surface reactions of molecular and atomic oxygen with carbon phosphide films

The surface reactions of atomic and molecular oxygen with carbon phosphide films have been studied using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Carbon phosphide films were produced by ion implantation of trimethylphosphine into polyethylene. Atmospheric oxidation of carbon phosphide films was dominated by phosphorus oxidation and generated a carbon-containing phosphate surface film. This oxidized surface layer acted as an effective diffusion barrier, limiting the depth of phosphorus oxidation within the carbon phosphide film to < 3 nm. The effect of atomic oxygen (AO) exposure on this oxidized carbon phosphide layer was subsequently probed in situ using XPS. Initially AO exposure resulted in a loss of carbon atoms from the surface, but increased the surface concentration of phosphorus atoms as well as the degree of phosphorus oxidation. For more prolonged AO exposures, a highly oxidized phosphate surface layer formed that appeared to be inert toward further AO-mediated erosion. By utilizing phosphorus-containing hydrocarbon thin films, the phosphorus oxides produced during exposure to AO were found to desorb at temperatures >500 K under vacuum conditions. Results from this study suggest that carbon phosphide films can be used as AO-resistant surface coatings on polymers.     

Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

TaON and Ta₃N₅ thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600–800 °C temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

Deposition of thin films of organic-inorganic hybrid materials based on aromatic carboxylic acids by atomic layer deposition

Thin films of organic-inorganic hybrid materials have been grown by the atomic layer deposition (ALD) technique, using trimethylaluminium (TMA) and aromatic carboxylic acids such as 1,2-benzene dicarboxylic acid, 1,3-benzene dicarboxylic acid, 1,4-benzene dicarboxylic acid, 1,3,5-benzene tricarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid as precursors. Growth rates as function of temperature show that all systems, with the exception of the benzoic acid-TMA system, possess ALD-windows and provides growth rates in the range of 0.25-1.34 nm/cycle. X-ray diffraction studies of the as-deposited films reveal their amorphous character, which is also supported by very low surface roughness as measured by atomic force microscopy. As-deposited films were investigated by Fourier Transform Infrared Spectroscopy proving that the deposited films are of a hybrid character.