超声波辅助固液反应球磨制备ZnFe2O4纳米晶的研究

以α-Fe2O3和ZnO粉体为原料,在超声波辅助高能球磨作用下通过诱发固液相反应,并在低温下烧结合成了ZnFe2O4纳米晶粉末.采用X射线、透射电镜(TEM)对前驱体和烧结产物进行了表征,分析了球磨过程对粉体晶粒尺寸的影响和znFe2O4的形成过程.实验结果表明:超声波辅助固液球磨能在低温下烧结合成ZnFe2O4纳米晶,纳米晶的晶粒尺寸为15～25 nm;相比无超声波辅助下的固液球磨,超声波球磨降低znFe2O4烧结温度约50℃;同一烧结温度下,球磨时间越长,ZnFe2O4转化率越高,晶粒尺寸越小.     

NaYbF4纳米晶浓度调节方法研究

本文采用热分解法制备了NaYbF₄纳米晶.通过TEM图像对NaYbF₄纳米晶的尺寸进行表征.根据Beer-Lambert理论建立了NaYbF₄纳米晶浓度与其光吸收度间的关系.提出了NaYbF₄纳米晶浓度调节方法,利用NaYbF₄纳米晶中Yb³⁺的吸收光谱确定溶液中NaYbF₄纳米晶的浓度,并给出了纳米晶浓度调节公式.为了检验这种浓度调节方法,对五批次NaYbF₄纳米晶样品的浓度进行调节,发现浓度调节方法非常可靠.并对调整后的浓度进行多次测量,检验此调节方法的误差,最大误差在9;.     

小尺寸、单分散Cd2+掺杂β-NaLuF∶Yb,Er上转换纳米晶的合成

采用改进高温热分解法合成了Cd2+掺杂NaLuF4∶Yb,Er纳米晶体,研究了Cd2+对晶相形成和发光强度的影响,采用CASTEP计算不同掺杂浓度下β-NaLuF4∶Yb,Er的形成能.在掺杂浓度为6mol;时合成的纳米晶荧光强度最强,其相较于未掺杂时增加了2.6倍,此时平均尺寸为23 nm左右.随后通过控制添加合适比例和含量的分散剂,解决了晶体易团聚的问题,得到了平均尺寸为18 nm的结晶度高、分散性好的上转换纳米晶.通过二氧化硅壳层的包覆,降低了Cd2泄露引起的毒性反应,表明在浓度较低时呈现出低毒性,满足了上转换纳米晶在医用材料领域应用的要求.     

水热LSS法制备La(OH)3 纳米晶

采用基于在水热合成的过程中发生于液相、固相和溶液相界面处的相扩散和分离机制的液相(Liquid)-固相(Solid)-溶液相(Solution)(LSS)法成功地制备出具有规则形状的La(OH)3纳米晶,主要研究了水热反应釜填充比、水热反应温度等工艺因素对La(OH)3纳米晶的晶粒尺寸及相组成的影响.采用X射线衍射仪、纳米粒度分析仪和透射电子显微镜对所制备的La(OH)3纳米晶进行表征.结果表明:所制备的La(OH)3由直径约为10～40nm的纳米晶组成,晶粒尺寸分布均匀;随着水热反应温度从120℃增加到220℃,La(OH)3纳米晶结晶程度提高,晶粒的平均尺寸从14nm增加到40nm;在60～80;范围内,水热反应釜填充比对La(OH)3纳米晶的粒度影响不大.     

熔盐热法制备ZnWO4纳米晶及其光催化性能

以Na2WO4·2H2O,Zn(NO3)2·6H2O为原料,LiNO3,NaNO3为熔盐介质,采用熔盐热法合成了ZnWO4纳米晶材料,对其相结构和纳米晶生长动力学进行了表征,对比传统水热法,研究了熔盐热剂与水溶剂两种介质类型对纳米晶形貌和光催化活性的影响.结果表明,晶体生长介质对ZnWO4纳米晶形貌会产生重要影响.采用熔盐热法在反应温度为180℃,保温时间为8 h条件下合成了形貌规则,分布均匀的四方板块层状等轴ZnWO4纳米粉体,晶粒尺寸在20～40 nm之间;在相同反应条件下,水热合成的纳米晶为棒状结构,其直径约25 nm,长度在100～200 nm之间;ZnWO4纳米晶的晶体完整度和晶体形貌对其光催化活性会产生重要影响,晶体发育完整的ZnWO4纳米晶具有更高的活性;在晶体发育完整的前提下,粉体的比表面积越大,相应的光催化活性也越高.     

微波水热法制备ZnO纳米晶

采用微波水热(microwave hydrothermal,M-H)法在MDS-6型温压双控微波水热反应仪中成功地制备出平均晶粒尺寸为30 nm且呈现棒状形貌的ZnO纳米晶.并在一定的水热温度和反应时间下系统研究了微波水热反应过程中[Zn2+]离子浓度、反应釜填充比、反应物浓度比[Zn2+]/[OH]等工艺因素对ZnO纳米晶的晶粒尺寸及形貌的影响.采用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)和透射电子显微镜(TEM)对所制备的ZnO纳米晶进行表征.结果表明:所制备ZnO的平均晶粒尺寸约为30 nm,ZnO纳米晶呈现棒状形貌.随着[Zn2+]离子浓度的增加,ZnO纳米晶的晶粒尺寸先减小后增大;随着反应釜填充比和反应物浓度比[Zn2+]/[OH]的增大,ZnO纳米晶的晶粒尺寸先减小后增大,并逐渐趋于稳定.制备ZnO纳米晶的最佳反应条件为:[Zn2+]=1.6 mol·L-1;反应釜填充比=70;;[Zn2+]/[OH]=1/2.     

不同能量密度下脉冲激光烧蚀制备纳米Si晶粒成核生长动力学研究

在室温、10 Pa氩气环境下,采用脉冲激光烧蚀(PLA)技术,通过改变激光能量密度,在烧蚀点正下方、与烧蚀羽辉轴线平行放置的衬底上沉积制备了一系列纳米Si晶薄膜.采用SEM、Raman散射谱和XRD对纳米Si晶薄膜进行了表征.结果表明:沉积在衬底上的纳米Si晶粒分布在距靶一定的范围内,晶粒尺寸随与靶面距离的增加先增大后减小;随着激光能量密度的增加,晶粒在衬底上的沉积范围双向展宽,但沉积所得最大晶粒尺寸基本保持不变,只是沉积位置随激光能量密度的增加相应后移.结合流体力学模型、成核分区模型和热动力学方程,通过模拟激光烧蚀靶材的动力学过程,对纳米Si晶粒的成核生长动力学过程进行了研究.     

基于直流磁控溅射晶种层的ZnO纳米阵列的制备及性能研究

采用直流反应磁控溅射法制备品种层薄膜,研究O2/Ar气体分压比和退火温度对品种层结构和微观形貌的影响.通过化学水浴沉积,在预制有晶种层的薄膜上制备ZnO纳米阵列结构,研究不同前驱体浓度和预制晶种层对纳米阵列生长的影响.结果表明,当O2/Ar中O2分压减少,薄膜均匀性较差,当Ar分压增加薄膜由于扩散而趋于平整.退火温度增加,晶粒尺寸增大,内应力降低.磁控溅射法预制的晶种层上生长的纳米棒垂直于衬底生长,(002)晶面的衍射峰强最高,说明纳米棒沿c轴择优取向.生长液的浓度对纳米棒的形貌影响显著,随着生长液浓度的升高,ZnO纳米阵列直径增大,顶端趋于平整的六棱柱结构.     

水热合成金红石型TiO2纳米晶及形成机理

以TiCl4为原料加水配制成0.5～2.0mol/L的TiOCl2溶液,在反应温度为120～180℃时可获得纳米级针形(轴比4～5)及球形8～10nm的金红石粒子.研究了升温速率、搅拌等对金红石型TiO2纳米晶的粒径及形貌的影响.使用TEM及XRD对产物粒子进行了表征,并初步探讨了金红石纳米晶的形成机理.结果表明:对于一定浓度的TiOCl2溶液,当反应温度高于140℃时,可生成纯相金红石型TiO2纳米晶粒,搅拌和提高升温速率有利于生成纳米球形颗粒.     

小尺寸、单分散Cd~(2+)掺杂β-NaLuF_4∶Yb,Er上转换纳米晶的合成

采用改进高温热分解法合成了Cd~(2+)掺杂NaLuF_4∶Yb, Er纳米晶体,研究了Cd~(2+)对晶相形成和发光强度的影响,采用CASTEP计算不同掺杂浓度下β-NaLuF_4∶Yb, Er的形成能。在掺杂浓度为6mol%时合成的纳米晶荧光强度最强,其相较于未掺杂时增加了2.6倍,此时平均尺寸为23 nm左右。随后通过控制添加合适比例和含量的分散剂,解决了晶体易团聚的问题,得到了平均尺寸为18 nm的结晶度高、分散性好的上转换纳米晶。通过二氧化硅壳层的包覆,降低了Cd~(2+)泄露引起的毒性反应,表明在浓度较低时呈现出低毒性,满足了上转换纳米晶在医用材料领域应用的要求。     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.