Cu2O/还原氧化石墨烯复合材料的构筑及其在NOx气体分子检测方面的应用

采用氧化石墨(GO)为碳源,CuSO4为铜源,葡萄糖为还原剂,70℃回流,制备得到Cu2O/还原氧化石墨烯复合材料.该复合材料具有层状结构,八面体的Cu2O粒子均匀地生长在还原氧化石墨的表面.采用Cu2O/还原氧化石墨烯复合材料组装成气敏元件,在室温下对NOx气体分子进行检测,结果表明,该材料在室温下对97.0 ppm NOx有很较好的气敏响应,灵敏度为17.42;以上,响应时间为13.33 s.该传感器的最低检测浓度为0.97 ppm NOx,对NOx分子具有非常高的气敏选择性.     

氧化石墨烯与氧化锌复合材料的制备及室温NOx气敏性能研究

以Zn(NO3)2·6H2O为锌源,尿素为沉淀剂,氧化石墨烯(GO)为碳源,采用均匀沉淀法合成碱式碳酸锌与氧化石墨烯复合材料前驱体,350℃下焙烧前驱体2h,获得ZnO/GO复合材料,在室温下研究了该复合材料对NOx的气敏性能.通过X射线衍射、拉曼光谱、扫描电子显微镜和透射电子显微镜对材料的形貌和结构进行表征.结果表明,所得样品为六方ZnO与GO复合材料,ZnO纳米粒子较均匀的覆盖在GO的表面.当硝酸锌溶液浓度为0.3mol/L时,所合成的复合材料对NOx有较高的灵敏度,且注入NOx体积浓度97 ppm时,灵敏度为27.5;,响应时间1s,最低检测浓度可达0.97 ppm.     

Ni/NiO纳米复合材料的制备及其室温下NOx气敏性研究

采用静电纺丝法合成了直径为300 nm Ni(CH3COO) 2/PS纳米纤维,并且通过煅烧得到Ni/NiO纳米复合材料.对Ni/NiO纳米复合材料的NOx气敏性检测研究发现,该材料在室温下对97 ppm NOx有很较好的气敏响应,灵敏度可达到30;以上,响应时间小于4 min.     

石墨烯/WO3纳米片的制备及对H2S气敏性能的研究

为了改善WO3基材料的气敏性能,通过水热法制备出石墨烯添加量为0.5;、0.8;、1.0;、1.5;(质量分数)的石墨烯/WO3纳米片复合材料.利用XRD和FE-SEM对材料的物相、形貌进行表征,并研究其对H2S的气敏性能.结果表明,复合石墨烯对WO3的结构和形貌产生了较大的影响,石墨烯复合使材料对H2S的灵敏度提高,工作温度降低,石墨烯(0.5wt;)/WO3纳米片复合材料在110 ℃对100 ppm H2S气体灵敏度可达8.3,且响应-恢复时间短.     

基于二硫化钼/石墨烯复合材料的汞蒸气传感器

采用水热法合成MoS₂/石墨烯复合材料并制作气敏元件,进行汞蒸气气敏性质测试。当石墨烯与MoS₂的摩尔比为0.5%时,复合材料对汞蒸气的灵敏度最佳;在2.18～126.18 mg/m³浓度范围内,传感器的灵敏度具有良好的线性度;在汞蒸气浓度29.48 mg/m³条件下,传感器的响应时间为8.5 min,恢复时间为9.0 min。传感器具有优良的重复性、稳定性和选择性,传感器在燃煤电厂烟气常见成分H₂S、NH₃和NO₂三种气体中没有明显的响应,可以应用于实际检测。     

三维花状Ni(OH)2/CNT纳米复合材料制备及NOx气敏性能研究

为了制备室温下对NOx气敏性能优异的纳米材料,本文采用简单的一步回流法制备出呈三维花状的Ni(OH)2/碳纳米管(CNT)纳米复合材料.分别采用XRD、SEM、TEM等表征手段研究了复合材料的形貌和结构.结果表明:三维花状结构是由Ni(OH)2纳米薄片层层堆叠组装起来的,CNT很好的嵌入在花状结构内.该材料在室温条件下对NOx有较好的气敏性能,当CNT的加入量为20 mg时,对于97 ppm NOx气体响应最快为8 s,灵敏度可达到24;,最低检测限为0.97 ppm.对其气敏机理进行研究发现,CNT的加入,有利于提高该复合材料的导电性能和气体的传输能力.该复合材料具有3D结构和独特的化学组成有望在气敏器件、催化等领域得到广泛的应用.     

“三明治”PbS纳米晶/rGO复合材料的制备及其对NH_3的室温气敏性能研究

采用一步溶液法制备"三明治"PbS纳米晶/rGO复合材料,通过X射线衍射仪和场发射扫描电子显微镜对样品的晶体结构和表面形貌进行表征,并制作旁热式气敏元器件,测试其气敏特性。研究结果表明在PbS纳米晶/rGO复合材料中,PbS纳米晶均匀负载在rGO片层上,且复合材料存在类似"三明治"的三维结构。该复合材料在室温下对NH_3具有良好检测能力,对1000 ppm NH_3的灵敏度达到3.45,与纯PbS纳米晶及rGO相比,气敏性能得到显著提升,其最低检测极限为1 ppm,且具有良好的氨气选择性。对"三明治"PbS纳米晶/rGO复合材料气敏机理进行分析认为,rGO加入起到载流子传输层的作用,三维结构增加气体扩散速度及吸附面积。三明治状PbS纳米晶/rGO复合材料因其特殊结构及优异的气敏性能,有望在气敏领域得到广泛应用。     

In2O3纳米粉体的制备及其气敏性能研究

以In(NO3)3·4.5H2O为原料,采用室温固相合成法、化学共沉淀法、均匀沉淀法、溶胶-凝胶法、微乳液法、水热法等六种不同方法制备In2O3纳米粉体.通过XRD、SEM、TEM等手段对粉体的物相、形貌、粒度等进行表征.结果表明,室温固相合成法、化学共沉淀法和水热法制备的粉体形貌为棒状,微乳液法、溶胶-凝胶法和均匀沉淀法制备的粉体形貌为粒径非常小的颗粒状.均匀沉淀法制备的In2O3气敏元件对Cl2具有最高的灵敏度,110 ℃工作温度下对100 ppm Cl2的灵敏度高达1175,且具有选择性好,响应-恢复时间短等特性.     

N掺杂Bi2O2CO3/氧化石墨烯分级结构的合成及其可见光催化性能研究

以柠檬酸铋铵分子为前驱体,采用一步水热法直接合成了原位N掺杂Bi2 O2 CO3分级微球(由二维级别纳米片组装而成的三维级别的维度分级结构)及其与氧化石墨烯(GO)的复合材料.柠檬酸铋铵在水热过程分解出的NH4+为N掺杂唯一来源,柠檬酸根在水热过程中分解产生CO32-,部分Bi3+被还原成Bi单质.通过N掺杂以及GO的引入,使Bi2 O2 CO3的光响应范围扩展至可见光,降低了Bi2O2CO3的禁带宽度.Bi单质使复合材料具备更低的电子-空穴复合率.可见光照射下,N掺杂Bi2 O2 CO3分级微球表现出良好的光催化去除NO的性能.引入氧化石墨烯和Bi单质后,光催化活性进一步得到提升.     

Cu-Cu2O/RGO复合材料的制备及NOx气敏性能

采用改进Hummers方法制备氧化石墨(GO).以还原态氧化石墨与铜和氧化亚铜复合(Cu-Cu2O/RGO).对GO和Cu-Cu2O/RGO复合材料进行了TEM、FT-IR、XRD、SEM等表征.研究结果表明,氧化石墨为片状结构,其边缘处存在较为明显的褶皱和折叠,氧化石墨中含有大量的含氧的亲水官能团(如:羧基、羟基、羰基等).而在Cu-Cu2O/RGO复合材料中,Cu和Cu2O粒子能够比较均匀地分布于还原态氧化石墨的层间.另外,在室温下对Cu-Cu2O/RGO复合材料的NOx气体敏感性测试结果发现,当注入NOx后,其电阻下降,反之当脱离NOx时电阻又会上升到平缓位置;而且随着NOx的浓度递减,灵敏度也随之下降,表现出较好的响应-恢复气敏特性.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.