Dielectric properties of titanium and gadolinium doped MgO single crystals

The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constant is found to be independent of frequency and the ac conductivity Re{_ae} agrees well with the relation Re{_ae} ⁿ , being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relation ^n–1(n<1), being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.     

Energy criterion in the interpretation of dielectric relaxation

The universal fractional-power-law frequency dependence of relaxation seen in most solid dielectrics has the unique property that the ratio of macroscopic energy lost per radian to energy stored is independent of frequency. In a recent publication we have shown that this energy criterion is satisfied if the energy loss in every microscopic dipolar reversal is independent of the rate of reversals. The present paper derives for the first time a quantitative relationship between the macroscopic energy loss per radian and the microscopic loss , thus providing a justification of the energy criterion approach. The relationship between this new frequency-domain interpretation of relaxation processes and the currently accepted theories of universal behaviour is discussed.     

Microwave measurements and modelling of the permittivity of tropical vegetation samples

Microwave measurements of tropical vegetation samples (grass, casuarina, rubber leaf, rubber wood) at 9.5 GHz as a function of moisture content at 21°C are presented. A comparison is made with results calculated from six models for the permittivity of dielectric mixtures. Of these, only one of the models due to Polder, van Santen, and deLoor is found to give reasonable agreement, particularly for the real part of the permittivity. It is clear that more complex formulations for the permittivity of vegetation are necessary to model its behaviour as a function of moisture content and frequency.     

Structural and dielectric properties of barium-modified SrBi4Ti4O15 ceramics

Barium-modified strontium bismuth titanate ceramics with chemical formula Sr_1?xBa_xBi₄Ti₄O₁₅ (x = 0.00, 0.02, 0.06, 0.08 and 0.1) (SBBT) have been prepared by means of solid-state reaction technique and their structural and electrical properties were investigated. X-ray diffraction data confirm that all the compositions show orthorhombic structure without any deleterious phase. Scanning electron micrographs show plate like grain morphology with random orientation of platelets. The temperature-dependent dielectric study shows that the phase transition temperature decreases, but the dielectric constant increases with increase in Ba content. Complex impedance plots show that both grain and grain boundary effect on the resistance mechanisms in all the compositions. The values of the activation energy confirm that the oxygen vacancies play an important role in the conduction. The ac conductivity of SBBT ceramics increases as a function of frequency due to relaxation phenomenon which arises due to mobile charge carriers.     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺,制备了钼掺杂铁电陶瓷样品SrBi4Ti4O15(SBTi)铁电陶瓷SrBi4-2x/3Ti4-xMoxO15(x=0.00,0.003,0.012,0.03,0.06,0.09).X射线衍射的结果表明,样品均为单一的层状钙钛矿结构相,Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现,样品晶粒为片状,随掺杂量的增加,晶粒逐渐变小.铁电测量表明,Mo掺杂使SBTi的铁电性能得到较大改善.随掺杂量x的增加,样品的剩余极化(2Pr)呈现出先增大,后减小的规律.在x=0.06时,2Pr达到最大值26.5 μC/cm2,与SrBi4TiO15(2Pr=12.2 μC/cm2)相比,提高117%.材料的矫顽场Ec在掺杂后增加仅为20%左右.SBTi的居里温度受掺杂的影响甚微,说明Mo对SrBi4Ti4O15的掺杂基本未影响材料原有的良好的热稳定性.     

Electrical and thermal properties of Ge40S60 films

Films of the composition Ge₄₀S₆₀ have been studied in the temperature range of 313–423 K for electrical conductivity, and 293–373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d=0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.     

Temperature dependence of dielectric behaviour of illuminated HgI2

The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 10⁴ Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.     

Electrical properties and thermal conductivity of AgTlTe2 in the solid and liquid phases

Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe₂ semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.     

Electrical properties of CuTlSe2 in the liquid state

The electrical conductivity and thermoelectric power of CuTlSe₂ have been investigated as a function of temperature up to 230 °C above its melting point. In the liquid state the experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott, 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in extended states near the band edge. It is found that the energy gap has a large temperature coefficient =5.5×10^–4eV/K.     

Electrical properties of the AgTlSe2 semiconductor in the liquid state

The electrical conductivity and thermoelectric power of AgTlSe₂ have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.     

Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy

p ⁺/n ⁺ In_0.53Ga_0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×10^{3 –1} cm^–2), high peak current densities (793 A/cm²) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.     

Mechanochemical synthesis and giant dielectric properties of CaCu3Ti4O12

CaCu₃Ti₄O₁₂ powder has been synthesized by mechanochemical milling (C-m) and solid-state reaction (C-ssr) techniques. C-m powder has a grain size of ~24 nm as determined from X-ray diffraction and FE-SEM measurements. The grain size of C-m ceramics has increased to 20 μm compared to a size of 3 μm for C-ssr ceramics after sintering at 1,050 °C for 10 h. Giant dielectric constant was observed in both ceramics with that of C-m larger than that of C-ssr. Impedance results show that the grain conductivity of C-m is more than two orders of magnitude lower than that of C-ssr, whereas its grain boundary conductivity is larger than that of C-ssr. These results are supported by the EDX results that show Cu-enriched grain boundaries in C-m ceramics.     

Microstructure and wear properties of laser clad Ti2Ni3Si/Ni3Ti multiphase intermetallic coatings

Wear resistant Ti₂Ni₃Si/Ni₃Ti multiphase intermetallic coatings with a microstructure consisting of Ti₂Ni₃Si primary dendrites and interdendritic Ti₂Ni₃Si/Ni₃Ti eutectic were fabricated on a substrate of 0.2% C plain carbon steel by a laser cladding process with Ti-Ni-Si alloy powders. The Ti₂Ni₃Si/Ni₃Ti coatings have excellent wear resistance and a low coefficient of friction under metallic dry sliding wear test conditions with hardened 0.45% C carbon steel as the silide-mating counterpart. The excellent tribological properties of the coating are attributed to the high hardness, strong covalent-dominant atomic bonds of the ternary metal silicide Ti₂Ni₃Si and to the high yield strength and strong yield anomaly of the intermetallic compound Ni₃Ti. PACS 81.15.Fg; 81.40.Pq; 68.35.Gy; 62.20.Qp     

Photoelectronic and electrical properties of Tl2InGaS4 layered crystals

Tl₂InGaS₄ layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and below 300 K, respectively. The photoconductivity measurements reflected the existence of two other energy levels located at 0.28 eV and 0.19 eV at high and low temperatures, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature of 330 K. The illumination dependence of photoconductivity is found to exhibit supralinear recombination in all the studied temperature ranges. The change in recombination mechanism is attributed to exchange in the behavior of sensitizing and recombination centers.     

Order parameters and dielectric relaxation in betaine proton glasses

Mixed crystals of betaine, phosphite and betaine phosphate have been investigated using broadband di-electric spectroscopy at frequencies 10⁻¹Hz≤ν≤10⁹Hz and temperatures 1.5 K≤T≤300 K for several betaine phosphate concentrationsx. For 0.2≤x≤0.65 an orientational glass state is found at low temperatures. The broad susceptibility spectra were analyzed using the concepts of distributions of relaxation times and of distributions of energy barriers. A critical comparison of the different approaches is given. In the mixed crystals that show antiferroelectric order at low temperatures, charge transport phenomena are studied. The static permittivity of the proton glass-forming crystals is analyzed, in terms of effectively one- and three-dimensional Ising models that incorporate random fields and random bonds.     

Synthesis and thermoelectric properties of YbSb2Te4

The study of the ternary phase diagram Yb–Sb–Te has led to the synthesis of YbSb₂Te₄ as a pure phase by way of high energy ball milling followed by annealing, whereas typical high temperature powder metallurgy leads to multiphase sample with impurities of the very stable YbTe. The Hall mobility, Seebeck coefficient, electrical resistivity and thermal conductivity of the layered compound YbSb₂Te₄ were measured in the range of 20–550 °C. The thermoelectric figure of merit peaks at 525 K and reaches 0.5. Of particular interest is the very low lattice thermal conductivity (as low as a glass) which makes YbSb₂Te₄ and related compounds promising thermoelectric materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Disordered charge distributions and dielectric loss in extra dense flint glasses

The complex permittivities of some extra dense flint glasses (EDF glasses) have been studied. The dielectric features of the samples are dominated by their PbO content. Both refractive indices and dielectric losses exhibit a close relation to the concentration of Pb ions. The latter are located either at sites of the network atoms or filling the potential minima interstitially. They can be identified by their different relaxation mechanisms. The dispersion in the submillimeter wave and FIR area is characterized by a very broad distribution of comparably sharp resonant states. Thermal lens — or hysteresis effects can be excluded.     

Nonlinear electrical characteristics and dielectric properties of Ca,Ta-doped TiO<Subscript>2</Subscript> varistors

Ca,Ta-doped TiO₂ varistors with high nonlinear coefficients are obtained by a ceramic sintering. The nonlinear electrical and dielectric properties of the samples doped with 0.5mol% Ca and various concentrations of Ta (0.05∼2.0mol%) were investigated. The samples sintered at 1350 °C have nonlinear coefficients of α=5.1∼42.1 and high relative dielectric constants approach 10⁵. The effects of Ta-doping on the nonlinear and dielectric properties of the Ca,Ta-doped TiO₂ varistors are studied in greater detail. When the concentration of Ta is 0.5mol%, the sample possesses the highest nonlinear coefficient and a comparatively lower dielectric constant. The effects of Ta and the nonlinear electrical behavior of the TiO₂ system are explained by analogy to a grain-boundary atomic defect model. Received: 24 October 2001 / Accepted: 8 January 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/826-49531, E-mail: wangwanyan@yahoo.com.cn     

Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy

p ⁺/n ⁺ InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 ^–1 cm^–2, peak current densities of 28.5 A/cm² and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.