Influence of isoelectronic impurities on the electronic structure of BN nanotubes

Via the example of a (5, 5) boron-nitrogen armchair nanotube, the influence of isoelectronic substitutional impurities on the electronic structure of BN nanotubes has been investigated with the use of linear augmented cylindrical waves. The treatment is based on the local density approximation and the muffin-tin approximation for the electron potential. In this method, the electronic spectrum of a system is governed by the free motion of electrons in the interatomic space between cylindrical barriers and the electron scattering on atomic centers. It has been found that the substitution of one atom of N by P leads to the splitting of all twofold degenerate bands by 0.2 eV on average, a decrease in the energy gap from 3.5 to 2.8 eV, the separation of the s(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity π(P) and π*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of an As atom on the electronic structure of (5, 5) BN nanotubes is qualitatively similar to the case of phosphorus, but the energy gap is smaller by 0.5 eV. The optical gap in the nanotubes is closed due to the effect of the Sb atom impurity. A substitution of one B atom by an Al atom results in the strong perturbation of the band structure and the energy gap in this case is only 1.6 eV in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. In the latter case, the energy gap is 2.9 eV. The above effects can be detected by the optical and photoelectron spectroscopy methods, as well as by measuring the electrical properties of the nanotubes. They can be used to create electronic devices based on boron-nitrogen nanotubes.     

Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes

For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5–7 defect. It is shown that the electronic states related to the contact region and the 5–7 defect lie in vicinity of the Fermi level.     

第一性原理研究电场对BN纳米管电子结构的影响

采用基于密度泛函理论的第一性原理计算研究了电场对BN纳米管的电子结构的影响.首先对在不同电场强度下的纳米管几何结构进行了优化,可以看出纳米管沿轴方向层间距出现了不规则的变化.电子能带结构显示,在电场作用下,zigzag型和armchair型两种结构纳米管的能带向低能方向移动,并且导致纳米管的带隙有显著的减小.电场使得armchair型纳米管的带隙发生了从间接带隙向直接带隙的转变.在电场作用下,纳米管的两端态密度呈现出明显的差异,正负电荷沿轴向出现了沿轴向的空间分离,Mulliken电荷分布图揭示出最高占据轨道和最低未占据轨道分居在纳米管的两端.     

BN管状团簇到单壁纳米管的几何结构和电子性质

利用密度泛函理论(DFT),对氮化硼(BN)管状团簇的几何结构、稳定性和电子性质进行了研究.选取合适的BN结构单元作为结构生长基元,采用逐层生长的方式计算得到有限长度、不同截面尺寸的稳定管状团簇.结构中B-N交替排列,结构组成中的四元环和六元环数目均符合一般表达式.计算结果表明,通过适当组装管状团簇以及碳原子掺杂,可以制备出带隙可调的单壁氮化硼纳米管.     

Ab initio simulations on the atomic and electronic structure of single-walled BN nanotubes and nanoarches

To simulate the perfect single-walled boron nitride nanotubes and nanoarches with armchair- and zigzag-type chiralities and uniform diameter of ∼5 nm, we have constructed their one-dimensional (1D) periodic models. In this study, we have compared the calculated properties of nanotubes with those for both hexagonal and cubic phases of bulk: bond lengths, binding energies per B-N bond, effective atomic charges as well as parameters of total and projected one-electron densities of states. For both phases of BN bulk, we have additionally verified their lattice constants. In the density functional theory (DFT), calculations performed using formalism of the localized Gaussian-type atomic functions as implemented in the CRYSTAL-06 code we have applied Hamiltonians containing either PWGGA or hybrid (DFT+HF) B3PW exchange-correlation functionals. After calculation of Hessian matrix for the optimized structures of BN bulk (both phases) and nanotubes (both chiralities) using the CRYSTAL code we have estimated their normal phonon modes within the harmonic approximation. Applying both atomistic and continuum models we have calculated the elastic energies and moduli for SW BN nanoarches. Our calculations clearly show a reproducibility of the atomic structure, effective charges and total energy, as well as phonon and elastic properties when using either PWGGA or hybrid B3PW Hamiltonians. On other hand, there is a high sensitivity of the discrete energy spectra parameters (including band gap) to the choice of the first principles approach (the hybrid method reproduce them noticeably better).     

缺陷对单层MoS2电子结构的影响

为了研究缺陷对单层MoS2的电子结构, 本文基于密度泛函理论框架下的第一性原理, 采用数值基组的方法计算了MoS2的Mo位缺陷、S位缺陷的能带结构和态密度.结果发现：Mo位缺陷、S位缺陷的MoS2的能带结构中的价带顶与导带底都在Q点, 为直接带隙材料; 其中Mo位缺陷体的禁带区域都出现5条新能级, S位缺陷体的禁带区域出现了3条新能级; 缺陷体能带结构的能量下降与体系中未成键的电子有关.对于态密度而言, Mo位缺陷体的费米能级处出现了峰值, 表明Mo位缺陷会对其光电性质带来影响.同时分析电荷分布发现, Mo缺陷周围存在着负电荷聚集的现象, S缺陷周围存在正电荷聚集的现象.     

缺陷对单层MoS_2电子结构的影响

为了研究缺陷对单层MoS_2的电子结构,本文基于密度泛函理论框架下的第一性原理,采用数值基组的方法计算了MoS_2的Mo位缺陷、S位缺陷的能带结构和态密度.结果发现:Mo位缺陷、S位缺陷的MoS_2的能带结构中的价带顶与导带底都在Q点,为直接带隙材料;其中Mo位缺陷体的禁带区域都出现5条新能级,S位缺陷体的禁带区域出现了3条新能级;缺陷体能带结构的能量下降与体系中未成键的电子有关.对于态密度而言,Mo位缺陷体的费米能级处出现了峰值,表明Mo位缺陷会对其光电性质带来影响.同时分析电荷分布发现,Mo缺陷周围存在着负电荷聚集的现象,S缺陷周围存在正电荷聚集的现象.     

Theoretical study of defects of BN nanotubes: A molecular-mechanics study

We investigate the structure and the formation energy of the pentagon–heptagon pairs (5775) defects of BN nanotubes using a molecular-mechanics method. For (n, 0) BN nanotubes, the homoelemental bonds of the 5775 defect may be located nearly either parallel or perpendicularly in the direction of tube axis. The former is energetically favored and strongly affects the reduction of the strain with decreasing radius. The formation energy of the 5775 defect, which increases with increasing radius, is lower than that of the tetragon–octagon pairs (4884). The 5775 defect of BN nanotubes is structurally and energetically stable, as compared to the 4884 defect.     

Effect of pulsed ion irradiation on the electronic structure of multi-walled carbon nanotubes

The effect of pulsed ion irradiation and vacuum annealing on the ratio of sp ²- and sp ³-hybridized orbitals of carbon atoms in the layers of oriented multi-walled carbon nanotubes has been studied by analyzing the photoemission spectra of the C1s core level and the valence band of carbon, which were obtained using the equipment of the BESSY II Russian-German beamline of synchrotron radiation and a Riber analytical system. It has been shown that the ion irradiation leads to a significant decrease in the fraction of atoms with the sp ³ hybridization of electrons. On the contrary, the annealing reduces the fraction of the sp ³-component in the spectra of carbon. Typical features of the valence band of multi-walled carbon nanotubes in the annealed and irradiated states have been established.     

Electronic structure of SiC/BN composite segmented nanotubes

The electronic structure of segmented nanotubes composed of the alternating layers of (5,5) and (9,0) BN and SiC nanotubes in armchair and zigzag configurations, which differed in the orientation of the chemical bonds in the segments and the nature of the bonds (Si-N and B-C or Si-B and N-C) at the boundaries of BN and SiC regions, has been calculated using the linearized augmented cylindrical wave method. The calculations have been performed using the local density functional and the muffin-tin approximation for the electronic potential. It has been found that depending on the bonds at the segment boundaries, the (5,5) BN/SiC nanotubes are semiconductors with the energy gap E _g of 1 to 3 eV, whereas the (9,0) BN/SiC nanotubes exhibited a metal, semimetal, or semiconductor (E _g ～ 1 eV) type of band structures.     

Effect of carbon addition on synthesis of BN nanolayers encapsulating Fe fine particles and BN nanotubes

Boron nitride (BN) nanolayers encapsulating iron (Fe) fine particles and BN nanotubes were synthesized by annealing mixture powders of hematite, boron and carbon (C) at 1473 K for 2 h in a nitrogen atmosphere. The particles exhibited good soft magnetic properties. The thickness of BN nanolayers increased in the range of 10-100 nm with increasing C content in the mixture powders, which results in providing improvement of oxidation resistance of the particles. In the BN layers, no C was detected. BN nanotubes with diameters of ∼100 nm were also synthesized, and they had cup-stacked and bamboo-like structures.     

空位浓度对纤锌矿BN电子结构和光学性质影响的第一性原理研究

本文采用了第一性原理研究了空位缺陷纤锌矿BN的电子结构和光学性质.通过对能带结构、态密度分析发现：缺陷体系由于B、N的缺失,费米能级附近出现杂质能级.相较于本征体系,随着空位浓度增加,杂质能级变多,跃迁能量减小. N空位缺陷的纤锌矿BN态密度总体向低能区移动,且能级相较于B空位缺陷的纤锌矿BN明显增多.从复介电函数和光学吸收谱分析中发现,随着空位浓度的增加,缺陷体系纤锌矿BN在可见光区域的吸收逐渐增强.尤其是B₂₂N₂₄在可见光区域出现的吸收效果更好.     

Effects of defects on the electronic structure of ion-irradiated graphite

The effects of N⁺ and Ne⁺ ions impinging on a graphite target are studied by ultraviolet photoelectron spectroscopy. Changes in the valence band of the N⁺-irradiated graphite surface are found to be inherently different from the Ne⁺-ion-induced structural modification. They reveal a build-up of additional -defect states at the top of the band, and confirm what appears to be a distinct character of the influence of nitrogen on an amorphous carbon matrix.     

GGA-based analysis of the metformin adsorption on BN nanotubes

Density functional theory (DFT) studies are done to investigate structural and electronic properties of (5,5) chirality single walls boron nitride nanotubes (BNNTs) in the armchair model interacting with metformin (MF) on the surface and ends. Our calculations consider the exchange-correlation energies with the Hamprecht–Cohen–Tozer–Handy functional within the generalized gradient approximation (HCTH-GGA) and the double polarized DNP base function. The geometry optimization follows the minimum energy criterion for all six geometries we have considered. Results show that the MF is adsorbed through the groups NH₂–NH at one end of the nanotube. The system polarity is increased which indicates the possible dispersion and solubility. Moreover the interaction between these species induces an increase in the chemical reactivity of the order of 0.42 eV. Meanwhile the solvation in water keeps the semiconductor characteristics of both nanotube and MF. The work function of the BNNT-MF is drastically reduced respect to the pristine system when the BN nanotube is doped at its surface and ends with carbon. This means that the functionalized BN nanotube facilitates conditions to improve field emission.     

Effect of the dangling bond on the electronic and magnetic properties of BN nanoribbon

The effect of the dangling bond on the electronic and magnetic properties of BN nanoribbon with zigzag edge (ZBNNR) and armchair edge (ABNNR) have been studied using the first-principles projector-augmented wave (PAW) potential within the density function theory (DFT) framework. Though ZBNNR or ABNNR with H atom terminated at both edges is nonmagnetic semiconductor, the dangling bond induces magnetism for the ZBNNR with bare N edge, bare B edge, bare N and B edges, the ABNNR with bare N edge and bare B edge. However, the ABNNR with bare N and B edges is still nonmagnetic semiconductor due to the strong coupling of the dangling bonds of dimeric N and B atoms at the same edge. The magnetic moment of ZBNNR with bare N(B) edge is nearly half the magnetic moment of ABNNR with bare N(B) edge. Such a half relationship is also existed in the number of the dangling bond states appeared around the Fermi level in the band structures. Furthermore, the dangling bond states also cause both ZBNNR and ABNNR with bare N edge a transition from semiconducting to half-metallic and thus a completely (100%) spin-polarization, while cause both ZBNNR and ABNNR with bare B edge as well as ABNNR with bare N and B edges only a decrease in their band gap.     

Atomic and electronic structure of single-walled BN nanotubes containing N vacancies as well as C and O substitutes of N atoms

Defective single-walled BN nanotubes of armchair- and zigzag-type chiralities with uniform diameter can be simulated using a total geometry optimization for the 1D-periodic model. For calculations, we have applied the formalism of localized Gaussian-type atomic functions using the Hamiltonian containing hybrid (DFT+HF) non-local exchange-correlation functional B3PW as implemented in CRYSTAL code. Single N vacancy as well as C and O substitutes of N atom cause an appearance of the energy levels inside the BN NT band gap accompanied by relaxation of the nearest atomic spheres closest to the point defect and electronic charge redistribution around it.     

First principles study on the electronic structure and effect of vanadium doping of BN nanowires

The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.