GaAs自旋注入及巨霍尔效应的研究

在自旋电子学研究中,一般以超晶格结构、自旋阀、隧道结来实现,另一种自旋注入典型方法是稀磁半导体材料,如GaMnAs,本文通过颗粒膜实现自旋注入,利用磁控溅射法将Fe颗粒嵌入GaAs阵体上,制备了(GaAs)₁₉Fe₈₁颗粒膜样品,在室温条件下观测到15 μΩ ·cm最大饱和霍尔电阻率,该效应比纯铁的饱和霍尔电阻率大了一个数量级,成功地实现了自旋注入. 关键词： 自旋注入 颗粒膜 巨霍尔效应     

Magnetic properties of Nd1−xKxMnO3 compounds

Polycrystalline Nd_1−xK_xMnO₃ (x=0.10–0.20) compounds have been prepared in single phase form with Pbnm space group. The magnetic properties were studied by measuring dc magnetization and ac susceptibility. They exhibit paramagnetic to ferromagnetic transition with transition temperature ranging from 116 to 128 K. The magnetization data have been analyzed by using Brillouin function model and by taking into account the ferromagnetic interaction. The effective spin contribution towards ferromagnetic interaction and spin canting angle have been estimated. The spin canting angle is found to decrease with increase in doping. Magneto-caloric effect (MCE) has been studied and the maximum change in entropy was found to be 1.76 J/kg K for 1 T field. Metal–insulator transition and colossal magnetoresistance of the order of 60% for 1 T field have been observed for x=0.20 sample.     

Radiation characteristics of injection lasers based on vertically coupled quantum dots

We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm⁻²(300 K) with an increase of the number of QD stacks (N) up to 10. ForN≥ 3 lasing occurs via the QD ground state up to room temperature. Differential efficiency increases withNup to 50%. No change in range of high temperature stability of threshold current density (J_th) was observed, while the characteristic temperature (T₀) measured at 300 K increases from 60 to 120 K. Using InGaAs-AlGaAs QD with higher localization energy allowed us to decreaseJ_thdown to 60 A cm⁻²and to increase the differential efficiency up to 70%.     

Electrical spin transport in a GaAs (110) channel

A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb₂₀Fe₆₂Co₁₈/Ru/Co₄₀Fe₄₀B₂₀ films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb₂₀Fe₆₂Co₁₈ layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

Enhancement of MR ratios using thin oxide layers in PtMn and α-Fe2O3-based spin valves

Spin valves having thin oxide layers in the pinned and/or free layers were prepared by sputtering. MR ratios of the spin valves were increased from 8.1 to 11.9% by inserting the oxide layer into the pinned layer in Ta/PtMn/CoFe/Cu/CoFe/Ta spin valves. MR ratio of 13.9% and considerably large sheet ΔR of 2.55 Ω were obtained in the PtMn-based spin valves having the oxide layer in the pinned and free layer. Larger MR ratio of 17.3% and the sheet ΔR of 1.3 Ω were obtained in the PtMn-based dual-type spin valves having the oxide layer in both pinned layers. α-Fe₂O₃ based spin valves having thin oxide layers were also prepared. MR ratios of the spin valves were increased from 11.9 to 14.3% by inserting the oxide layer into the free layer in α-Fe₂O₃/CoFe/Cu/CoFe/Ta spin valves. The enhancement of the MR ratios may be attributed to the specular scattering effect of the conduction electrons by the thin oxide layers.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Visible photoluminescence in porous GaAs capped by GaAs

A typical porous structure with pores diameters ranging from 10 to 50 nm has been obtained by electrochemical etching of (1 0 0) heavily doped p-type GaAs substrate in HF solution. Room temperature photoluminescence (PL) investigations of the porous GaAs (π-GaAs) reveal the presence of two PL bands, I₁ and I₂, located at 1.403 and 1.877 eV, respectively. After GaAs capping, the I₁ and I₂ PL bands exhibit opposite shift trends. However, the emission efficiency of these two bands is not strongly modified. Low temperature PL of capped porous GaAs versus injection levels shows that the I₁ PL band exhibits a red shift while the I₂ PL band exhibits a blue shift with increasing injection levels. The I₂ PL band intensity temperature dependence shows an anomalous behaviour and its energy location shows a blue shift as temperature increases. The observed PL bands act independently and are attributed to electron – hole recombination in porous GaAs and to the well-known quantum confinement effects in GaAs nanocrystallites. The I₂ PL band excitation power and temperature dependencies were explained by the filling effect of GaAs nanocrystallites energy states.     

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al₂O₃ grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al₂O₃ with a smooth surface. Using this composite tunnel barrier of ALD-Al₂O₃ and PTCA, a spin injection signal of ∼30 Ω has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al₂O₃/PTCA tunnel barrier for spin injection into graphene.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Thermomagnetic hysteresis and electrical transport in amorphous films

We report resistivity and magnetization measurements on an amorphous Ni₇₄Mn₂₄Pt₂ thin film in the temperature range of 3–300 K. Two significant features are apparent in both the magnetic susceptibility and electrical resistivity. A low-temperature (low-T) anomaly is observed at about 40 K, where a cusp appears in the resistivity, while a concomitant step-like increase in zero-field-cooled (ZFC) magnetization (M) appears with increasing temperature. The low-T anomaly is attributed to a crossover from a pure re-entrant spin-glass within individual domains to a mixed ferro-spin-glass regime at lower temperatures. By contrast, the high-temperature (high-T) anomaly, signaled by the appearance of hysteresis below 250 K, corresponds to the freezing of transverse spins in individual domains acting independently. Between the low-T and high-T anomalies a small but discernable magnetic hysteresis is observed for warming vs. cooling in the field-cooled (FC) case. This behavior clearly indicates the presence of domain structure in the sample, while the disappearance of this hysteresis at lower temperatures indicates the complete freezing of the spin orientation of these domains. According to these results, we have divided the magnetic state of this sample into three regions: at temperatures above 250 K, the sample behaves like a soft ferromagnet, exhibiting M vs. H loops with very small hysteresis (less than 5 Oe). As the temperature is lowered into the intermediate region (the range 40–250 K), spins become frozen randomly and progressively within the individual domains. These domains behave independently, rather than as a cooperative behavior of the sample. Weak irreversibility sets in, indicating the onset of transverse spin freezing within the domains. At temperatures below 40 K, the M vs. H loops exhibit larger hysteresis, for both the ZFC and FC cases, as in a pure spin-glass. We have also demonstrated giant noise in the resistivity at temperatures just below 250 K. Such noise can originate from fluctuations of the domains near the film surface because of competing effective bulk and surface anisotropy fields. The large observed amplitude may be explained by means of a large ferromagnetic anisotropy in the resistivity due to the large spin–orbit effect seen in NiMn systems. Finally, the low-T peak in the resistivity has been analyzed using Fisher and Langer's expression based on the Friedel Model proposed for critical transitions in transition metals (s–d systems). The fitted results are in satisfactory agreement with the predictions of this model.     

Giant Hall effect in (GaAs)Fe granular films

A series of (GaAs)_1 − xFe_x (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of was observed in (GaAs)₃₀Fe₇₀ film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)–(Al₂O₃) and (NiCo)–(SiO₂) granular films prepared under the same preparation conditions, and 150% larger than that of Ge₃₀Fe₇₀.     

Gated spin relaxation in (1 1 0)-oriented quantum wells

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (1 1 0)-oriented wells shows a 100-fold reduction compared to equivalent (1 0 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm⁻¹. There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm⁻¹ reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility.     

On the environmental decoherence and spin interference in mesoscopic loop structures

Mechanisms of ‘environmental decoherence’ such as surface scattering, Elliot–Yafet process and precession mechanisms, as well as their influence on the spin phase relaxation are considered and compared. It is shown that the ‘spin ballistic’ regime is possible, when the phase relaxation length for the spin part of the wave function (L^(s)) is much greater than the phase relaxation length for the ‘orbital part’ (L^(e)). In the presence of an additional magnetic field, the spin part of the electron's wave function (WF) acquires a phase shift due to additional spin precession about that field. If the structure length L is chosen to be L^(s)>L>L^(e), it is possible to ‘wash out’ the quantum interference related to the phase coherence of the ‘orbital part’ of the WF, retaining at the same time that related to the phase coherence of the spin part and, hence, to reveal corresponding conductance oscillations.     

Spin injection in a coupled system of a diluted magnetic semiconductor Zn0.80Mn0.20Se and self-assembled quantum dots of CdSe

Spin injection processes from a Zn_0.80Mn_0.20Se diluted magnetic semiconductor (DMS) to adjacent self-assembled CdSe quantum dots (QDs) were investigated by cw and time-resolved magneto-optical spectroscopy in combination with tunable laser excitation. Direct experimental evidence for the spin injection was provided from the generation of the spin polarization in the QDs, which was opposite to their expected intrinsic polarization, by resonantly generating the spins in the DMS. The observed limited spin polarization generated by the spin injection, together with the sensitivity of the spin injection efficiency on structure design, indicates severe spin loss during the process and calls for further investigations to optimize spin injection efficiency in quantum structures.     

Application of M?ssbauer spectroscopy in magnetism

An overview is provided on our recent work that applies ⁵⁷Fe M?ssbauer spectroscopy to specific problems in nanomagnetism. ⁵⁷Fe conversion electron M?ssbauer spectroscopy (CEMS) in conjunction with the ⁵⁷Fe probe layer technique as well as ⁵⁷Fe nuclear resonant scattering (NRS) were employed for the study of various nanoscale layered systems: (i) metastable fct-Fe; a strongly enhanced hyperfine magnetic field B_hf of ～39?T at 25?K was observed in ultrahigh vacuum (UHV) on uncoated three-monolayers thick epitaxial face-centered tetragonal (fct) ⁵⁷Fe(110) ultrathin films grown by molecular-beam epitaxy (MBE) on vicinal Pd(110) substrates; this indicates the presence of enhanced Fe local moments, μ_Fe, as predicted theoretically; (ii) Fe spin structure; by applying magnetic fields, the Fe spin structure during magnetization reversal in layered (Sm–Co)/Fe exchange spring magnets and in exchange-biased Fe/MnF₂ bilayers was proven to be non-collinear and depth-dependent; (iii) ferromagnet/semiconductor interfaces for electrical spin injection; CEMS was used as a diagnostic tool for the investigation of magnetism at the buried interface of Fe electrical contacts on the clean surface of GaAs(001) and GaAs(001)-based spin light-emitting diodes (spin LED) with in-plane or out-of-plane Fe spin orientation; the measured rather large average hyperfine field of ～27?T at 295?K and the distribution of hyperfine magnetic fields, P(B_hf), provide evidence for the absence of magnetically “dead” layers and the existence of relatively large Fe moments (μ_Fe ～ 1.8?μ_B) at the ferromagnet/semiconductor interface. - Finally, a short outlook is given for potential applications of M?ssbauer spectroscopy on topical subjects of nanomagnetism/spintronics.     

High-Frequency ESR Measurements of <Emphasis Type="Italic">S</Emphasis> = 1/2 1-D Heisenberg Antiferromagnetic Zig-Zag Chain (VO)(SO<Subscript>4</Subscript>)(2,2-bpy)

High-frequency electron spin resonance (ESR) measurements of S = 1/2 one-dimensional Heisenberg antiferromagnetic zig-zag chain substance (VO)(SO₄)(2,2-bpy) were performed in the temperature region from 1.8 to 265 K. ESR measurements at 265 K show typical powder pattern spectra of the V⁴⁺ ion and g _|| = 1.925 ± 0.001 and g _⊥ = 1.976 ± 0.001 were obtained. Although the magnetic susceptibility shows a maximum at 3.1 K suggesting the existence of a short-range order, no g-shift and line width broadening were observed down to 1.8 K. We suggest that these temperature-independent features of ESR can be attributed to the result of frustration in (VO)(SO₄)(2,2-bpy).     

Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots

We report on optical orientation of electrons in n-doped InAs/GaAs quantum dots. Under non-resonant cw optical pumping, we measure a negative circular polarization of the luminescence of charged excitons (or trions) at low temperature (T=10 K). The dynamics of the recombination and of the circular polarization is studied by time-resolved spectroscopy. We discuss a simple theoretical model for the trion relaxation, that accounts for this remarkable polarization reversal. The interpretation relies on the bypass of Pauli blocking allowed by the anisotropic electron–hole exchange. Eventually, the spin relaxation time of doping electrons trapped in quantum dots is measured by a non-resonant pump–probe experiment.     

Spectroscopy of non-equilibrium electrons in quantum Hall conductors

Spectroscopy of local cyclotron emission from the hot spots is carried out on a GaAs/AlGaAs heterostructure two-dimensional electron gas system at B=6 T (ν=2.5) by applying a terahertz scanning microscope. The spectra of CE at the current entry and exit corners (hot spots) are remarkably broadened towards lower frequencies with increasing I up to 300 μA, indicating substantial relevance of non-equilibrium electrons generated in higher-level LLs; in terms of effective electron temperature, T_E reaching as high as 300 K is suggested while T_E=25–30 K on an average in the surrounding region (within a distance of 50 μm) about the hot point.     

Saturation recovery EPR and ELDOR at W-band for spin labels

A reference arm W-band (94 GHz) microwave bridge with two sample-irradiation arms for saturation recovery (SR) EPR and ELDOR experiments is described. Frequencies in each arm are derived from 2 GHz synthesizers that have a common time-base and are translated to 94 GHz in steps of 33 and 59 GHz. Intended applications are to nitroxide radical spin labels and spin probes in the liquid phase. An enabling technology is the use of a W-band loop-gap resonator (LGR) [J.W. Sidabras, R.R. Mett, W. Froncisz, T.G. Camenisch, J.R. Anderson, J.S. Hyde, Multipurpose EPR loop-gap resonator and cylindrical TE₀₁₁ cavity for aqueous samples at 94 GHz, Rev. Sci. Instrum. 78 (2007) 034701]. The high efficiency parameter (8.2 GW^−1/2 with sample) permits the saturating pump pulse level to be just 5 mW or less. Applications of SR EPR and ELDOR to the hydrophilic spin labels 3-carbamoyl-2,2,5,5-tetra-methyl-3-pyrroline-1-yloxyl (CTPO) and 2,2,6,6,-tetramethyl-4-piperidone-1-oxyl (TEMPONE) are described in detail. In the SR ELDOR experiment, nitrogen nuclear relaxation as well as Heisenberg exchange transfer saturation from pumped to observed hyperfine transitions. SR ELDOR was found to be an essential method for measurements of saturation transfer rates for small molecules such as TEMPONE. Free induction decay (FID) signals for small nitroxides at W-band are also reported. Results are compared with multifrequency measurements of T_1e previously reported for these molecules in the range of 2–35 GHz [J.S. Hyde, J.-J. Yin, W.K. Subczynski, T.G. Camenisch, J.J. Ratke, W. Froncisz, Spin label EPR T₁ values using saturation recovery from 2 to 35 GHz. J. Phys. Chem. B 108 (2004) 9524–9529]. The values of T_1e decrease at 94 GHz relative to values at 35 GHz.