Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode

We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.     

Polarized (letter ‘8’) memory in CdSe point contact diodes

Polarized memory, i.e., the memory in which switching between ON and OFF states depends on the polarity of bias voltage has been found in point contact diodes on single crystals of CdSe, CdS, CdTe, GaAs and GaP. The detailed features of switching characteristics depend on the choice of metals for the point contact electrode, on the sharpness of the contact and also on the resistance of the current limiter in the circuit. Observation of the transients between ON and OFF has also been performed.     

Temperature characteristics of a Y-cut Z-propagation LiNbO3 light modulator for application to polarimeters

The temperature characteristics of a Y-cut Z-propagation LiNbO₃ crystal light modulator, with manufacturing errors, in the absence and presence of an electric field have been investigated by analyses and experiments. According to our analyses, when the Z-axis of the LiNbO₃ crystal is at an angle of 0.22° with respect to the normal of the input surface of the crystal, we found the theoretical fluctuation of the normalized output-light intensity with temperature to be less than 7:75 × 10⁻⁶/°C. This magnitude is less than 1% of the theoretical intensity fluctuation of a conventional temperature-compensation LiNbO₃ light modulator. The measured temperature characteristics of a prototype of this modulator were 2 × 10⁻⁴/°C in the absence of an electric field (OFF state) and 2:8 × 10⁻⁴/°C in the presence of an external field (ON state). During a running test of longer than 8 hours at room temperature, the intensity fluctuation of this prototype was 0.01% in the OFF state, and 0.07% in the ON state.     

Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator with organic–inorganic distributed Bragg reflector

We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic–inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF_x/TiO_xlayers, fabricated by room-temperature ion beam sputtering on the rear side of the device. The reflectivity of the mirror approaches 98% in the infrared spectral region and is centered at then = 1 exciton resonance of the MQW. ON–OFF driving reverse voltages of 0.5 and 1.8 V are measured at room temperature. In this range the static response of the device is linear so that it can be used for analog electro-optic modulation.     

One-dimensional single and multipulse simulations of the ON/OFFvoltages and the bistable margin for He, Xe, and He/Xe filled plasmadisplay pixels

A one-dimensional plasma model developed for AC plasma display pixels is used to perform multipulse and single-pulse simulations to model the maximum sustain voltages, the minimum sustain voltages, and the voltage margins for 100% helium, 100% xenon, and for 2% xenon in helium and a 400 torr pressure (p) and a gap (L) of 100 μm. The multipulse simulations describe the growth in wall voltage at the so-called ON voltage and the decay in wall voltage at the so-called OFF voltage. For square wave forms, the ON voltage is the voltage at which a pixel attains to a stable operation in which a discharge occurs in each succeeding pulse and the wall voltage equal to the applied voltage. The OFF voltage is the voltage at which a pixel that is ON goes off and no further discharges occur. Experimental data for helium show the hysteresis in the discharge current observed when the voltage is increased to turn ON pixels and then reduced to turn OFF-pixels in a panel. Simulations which match the helium data are also shown. The difference between the ON and OFF voltages defines the bistable margin. For the helium-xenon Penning mixture, the ON and OFF voltages determined by multipulse simulations are almost identical to the values obtained from the wall voltage transfer curve method. In the helium-xenon Penning mixture, the ionization rate for xenon ground state increases dramatically compared to its ionization rate in pure xenon due to the modification in the electron velocity distribution function in the mixture. This feature provides enhanced volumetric ionization in the discharge and hence a rapid growth rate of the wall voltage which is desirable for a sharp transition from OFF to ON in a pixel     

Multi-layer graphene membrane based memory cell

The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.     

Ku波段编码式电控超薄周期单元设计与验证

编码式电控周期单元通过加载电子控制器件使周期结构具有编码式的电可调特点. 本文利用PIN二极管, 设计实现了一种工作在Ku波段的超薄平面电控单元结构. 当外加电压控制二极管导通或截止时, 该结构的反射相位呈现出180°的相位差, 并且具有较低的反射损耗. 因此, 当对周期排列的单元外加不同的电压时, 可等效为用不同组合的“1”, “0”对结构进行编码, 从而可以获得不同的电磁功能. 为验证单元的编码特性, 从“场”与“路”两个角度考虑, 设计了实际的偏置电路, 制作了单元样品, 并基于波导法测试了其性能. 实验结果表明: 在加载不同的控制电压时, 制作的单元结构实现了设计的低损耗和相位差; 实验与仿真符合良好. 提出的周期单元形式简单, 厚度超薄, 其电控编码式特性在主动式隐身表面或波束捷变天线设计等许多方面都有潜在应用.     

基于等效电路的半导体激光器热噪音特性仿真研究

通过引入Langevin噪音项的噪音等效电路研究了半导体激光器的热噪音特性．研究表明，在激光器的工作过程中，由于自加热效应所引来的热噪音是不能够被忽略的．本文基于半导体激光器的噪音等效电路，仿真分析不同频带宽度、不同注入电流情况下，工作温度的变化对激光器结电压噪音谱的影响．     

Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device

We present that the electrical bistability in organic-inorganic bistable devices based on tris-(8-hydroxyquinoline) aluminum (Alq₃) and zinc selenide (ZnSe) with the tri-layer structure of Alq₃/aluminum (Al)/ZnSe. The current-voltage characteristics of the bistable device exhibit two electrical states as low (OFF state) and high (ON state) conductivity with ON/OFF ratio about four orders of magnitude. The conduction mechanisms in both ON and OFF states were analyzed by theoretical model. In the OFF state, the conduction mechanisms can be explained by thermionic emission model, which the ON state can be described by ohmic conduction model. The retention times of both states are more than 8000 s, and the device can reproduce continuous write-read-erase-read switching cycles. Moreover, for the organic-inorganic bistable device was kept at one year in ambient condition without encapsulation. The device still exhibited the electrical bistable behavior. Consequently, the ZnSe layer may be led to improve the lifetime property of the bistable device which acted as a self-encapsulating layer.     

Effect of different types of auditory stimulation on vowel formant frequencies in multichannel cochlear implant users

Two experiments investigating the effects of auditory stimulation delivered via a Nucleus multichannel cochlear implant upon vowel production in adventitiously deafened adult speakers are reported. The first experiment contrasts vowel formant frequencies produced without auditory stimulation (implant processor OFF) to those produced with auditory stimulation (processor ON). Significant shifts in second formant frequencies were observed for intermediate vowels produced without auditory stimulation; however, no significant shifts were observed for the point vowels. Higher first formant frequencies occurred in five of eight vowels when the processor was turned ON versus OFF. A second experiment contrasted productions of the word "head" produced with a FULL map, OFF condition, and a SINGLE channel condition that restricted the amount of auditory information received by the subjects. This experiment revealed significant shifts in second formant frequencies between FULL map utterances and the other conditions. No significant differences in second formant frequencies were observed between SINGLE channel and OFF conditions. These data suggest auditory feedback information may be used to adjust the articulation of some speech sounds.     

原位溅射型单次试开密码鉴别电路

针对目前微机电系统密码锁中的鉴别器结构复杂、智能电子密码锁可靠性不高的问题,设计了一种N bit的原位溅射型单次试开密码鉴别电路。N bit的密码鉴别电路,由2N(N级、每级2个)个原位溅射型OFF-ON开关按照每级二选一的逻辑、N级级联的形式构成;将原位溅射型OFF-ON开关(OFF态到ON态的单向切换具有不可逆特性)与具有熔断特性的保险丝按照装定密码对应的电路关系进行连接,构成了原位溅射型单次试开固态密码锁,可将此密码锁用于对安全性要求高的要害系统、设施中。为了获得原位溅射型OFF-ON开关中金属爆炸箔与叉指电极之间的间隙,给出了三种固态密码鉴别电路的微加工工艺方案。     

Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

In this paper, a planar Schottky varistor diode is studied and modeled by equivalent circuit method and three dimensional full wave electromagnetic (3D-EM) method, respectively. The diode's equivalent circuit is extracted from millimeter-wave small-signal S-parameter measurements. Since the package of the diode influences the electromagnetic field distribution at millimeter and sub-millimeter wavelengths, a 3D-EM model and an improved equivalent circuit model is applied to describe the field precisely. The simulated results of equivalent circuit, improved equivalent circuit and 3D-EM model are compared with the measured results. In addition, the effects caused by silver paste conductive adhesive are considered in 3D-EM model and improved equivalent circuit model. The results show that both the 3D-EM model and improved equivalent circuit model have good S-parameter consistency with measured results.     

一种紧凑型高功率脉冲调制器

 研制了一种基于水介质单同轴脉冲形成线型的高功率脉冲调制器,该调制器由初级储能电容器、脉冲变压器、水介质同轴脉冲形成线、氢气主开关和场发射真空二极管等组成。用Pspice电路软件对脉冲形成线的充电电压和二极管电压、电流进行了模拟,并用有限元软件分析了脉冲形成线的电场分布。当初级储能电容器组充电电压为35 kV, 氢气主开关导通电压高达520 kV时,在调制器场发射二极管输出电压约230 kV, 束流30 kA,脉宽约60 ns的高电压脉冲。此外,对主开关充不同类型的气体进行了实验研究,结果表明:氢气主开关的脉冲调制器能够在二极管上获得前沿更陡的高电压脉冲,并能有效地改善二极管电子束的性能。理论分析与实验结果基本一致。此种类型的调制器具有运行稳定、体积小、结构紧凑的特点。     

Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

In this paper, we report a facile quantum dot/In?CInOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.     

蔡氏电路的功能全同电路与拓扑等效电路及其设计方法

基于经典蔡氏电路方程的电容电压与电感电流变量及其状态方程归一化特点,提出了三种标度化、优化的电路设计方法:一种是方程变量都为电压的5运放电源限幅蔡氏电路,便于大规模集成;两种二极管非线性构成的功能全同蔡氏电路,与限幅非线性电路优势互补,可供大规模集成的细胞神经网络系统设计;同时,给出了与蔡氏电路为微分同胚电路的优化三次方蔡氏电路.各电路设计方法适用于以三折线为主的三次型混沌电路.最后,将本文提出的电路设计方法应用于混沌保密通信,实验表明该方法具有实用性和一定的应用价值.     

基于扣除法的电吸收调制器本征特性分析方法

基于电吸收调制器的工作原理和等效电路模型对调制器的高频响应特性进行分析,提出了一种采用频率响应扣除法提取有源区本征响应的仿真新方法.该方法能简单地去掉封装网络、夹具及光探测仪器等带来的影响,用该方法得到了待测lnGaAs/InAIAs材料电吸收调制器准确的的高频本征响应特性.     

Simulation Investigation of Millimeter Wave Varactor-tuned Transmission Cavity-stabilized Oscillator

A new circuit configuration for millimeter wave varactor-tuned transmission cavity-stabilized oscillator has been proposed in this paper. Compared to conventional varactor-tuned reflection cavity-stabilized oscillator, in this configuration, a high quality factor transmission cavity directly coupled to varactor diode is employed to improve the performances of the oscillator. The operation frequency of this oscillator can be tuned by varying the resonant frequency of the transmission cavity through changing bias voltage of the varactor diode. An equivalent circuit model for the oscillator has been presented in order to theoretically investigate the performance characteristics of the oscillator. On the basis of this model, electrical tuning characteristics have been studied. Mode jumping phenomena during electrical tuning process have been analyzed for obtaining stable operations of the oscillator. The analytical formulae of quality factor and efficiency have been derived in terms of relevant circuit parameters. Particular emphasis has been paid on several circuit parameters which have a substantial impact on circuit performance. Some design considerations have been pointed out according to the simulation results, which are useful to the design and fabrication of this type of oscillators.     

微波混频器高功率微波效应等效电路建立及仿真

 利用先进设计系统软件设计并制作了单端混频器电路。开展了高功率微波注入效应实验,获得了一组损伤程度不同的混频器。通过测试二极管的伏-安特性曲线和分析失效机理,用拟合方法建立了损伤二极管的等效电路模型。基于此模型建立了损伤混频器等效电路,并对其被高功率微波损伤前后的输入输出特性进行了仿真计算,其变频损耗与混频器损伤后的实验测试结果相吻合。结果表明：损伤二极管的等效电路模型为在正常二极管结电阻两端并联一损伤等效电阻,其阻值大小反应了混频器的损伤程度,阻值越小,损伤越严重。     

新型有机光电开关器件

结合有机发光和光电二极管器件,制作了一种新型的有机光电开关器件。器件结构为：ITO／NPB／Alq3／CuPc／C60／NPB／Alq3／LiF／Al。其中,ITO(indium tin oxide,氧化铟锡)为正极,NPB[N,N′-di(naphthaleneyl)N,N′-diphenylbenzidine]／Alq3[tris-(8-hydro--xyquinoline,8-羟基喹啉铝)aluminum]作为电致发光层,CuPc(Copper Phthalocyanine,酞菁铜)／C60为光电转换层,LiF／Al为器件负极。即两个电致发光层和一个光电转换层组成的三明治型结构。从低向高施加电压和从高向低施加电压时,该器件呈现出不同的电流密度-电压(J-V)和功率密度-电压(P-V)曲线,即器件在相同的电压下可得到不同的电流密度值和功率密度值(亮度值),利用高亮度状态(ON)到低亮度状态(OFF)的转变,可实现开关型有机电致发光器件。器件的光电转换层吸收效率为0．153％。     

SPICE modeling of flux-controlled unipolar memristive devices

Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.