共查询到18条相似文献,搜索用时 187 毫秒
1.
在高温高压条件下,金属触媒与石墨形成的碳化物Me3C(Me为Fe、Ni)是形成金刚石结构的主要碳源。利用固体与分子经验电子理论(EET),计算了多种Me3C型碳化物和金刚石的价电子结构以及表征界面性质的电子结构参数,并将程氏理论(TFDC)提出的原子界面边界条件应用到碳化物/金刚石界面,发现碳化物晶胞中C—C键络组成的晶面与金刚石中的某些晶面的电子密度在一级近似下是连续的,但不同碳化物其连续程度不同,其中Co3C和(FeNi)3C中碳原子组成晶面的价电子结构与金刚石中的最接近,其C—C键转化为金刚石结构需要的能量最低。从电子结构角度上解释了催化机制及不同触媒的催化效果,价电子理论是探讨金刚石催化机制的新途径。 相似文献
2.
通过对合成金刚石的原材料和合成产物——石墨、Ni70Mn25Co5触媒、普通人造金刚石、黑色人造金刚石、NiMnCoC熔体的磁化率测试,以及对黑色人造金刚石和普通人造金刚石破碎断面扫描电镜的对比分析,认为黑色人造金刚石形成低磁性的原因是由于合成过程中温度偏高、压力偏低,生长的金刚石质量差、裂纹多。晶体内夹杂了很多石墨与触媒包裹体,同时金刚石表面与金刚石晶体内的触媒包裹体之间形成贯穿性的裂纹。在金刚石化学提纯处理过程中,金刚石晶体内的铁磁性触媒包裹体杂质被通过裂纹进入的酸除去。因而在检测金刚石磁性时,黑色金刚石的磁性很小,呈弱磁性。 相似文献
3.
在3~20 GPa压力范围内,测量了含氧量较低的YBa2Cu3O7-δ(δ=0.46)单晶压力增强效应(dTc/dp=4.9KGPa-1);YBa2Cu3O7(Tc0=90 K)单晶在压力下临界电流密度随压力变化;外磁场H=30 kOe时,Tc与磁场、压力关系;压力达16.5 GPa下,Bi2Sr2CaCu2Ox单晶Tc(p)关系(dTc/dp=-0.4 KGPa-1)。发现Y系高温超导体的温度压力导数dTc/dp与Tc0中间呈dTc/dp=b-mTc0线性关系(b、m为常数)。结合压力下Y系超导体结构相变和含氧量对Tc影响,分析这类超导体Tc有很强的正压力效应的原因。把实验结果同几种超导电性微观理论模型进行了分析和比较。 相似文献
4.
简要介绍了(Sr,Ca)n+1CunO2n(Cl,O)2,即三元数法的Cl-“02n”(或四元数Cl-02(n-1)n)超导系列,简称Cl-系超导体。和通常的高温超导体不同,Cl-系的电荷库由卤化物构成,而非通常的氧化物。即Cl-系的导电区和电荷库由顶角氯连接,根据这一结构特点用“顶角氧”掺杂,高压合成了Tc≈80 K的(Sr,Ca)3Cu2O4(Cl,O)2超导体。该化合物具有和全氧化物高温超导体可比的超导性能,表明高温高压合成全新的卤氧超导新材料的潜力,以及开发卤氧化物高温超导体群的研究前景。 相似文献
5.
研究了炸药爆轰合成的纳米金刚石粉在高温(约1 600 K)、高压(5.2 GPa)条件下的行为。将纳米金刚石粉与粉末合金(Ni70Mn25Co5、100#)混合、压制成圆片,与合金片 (Ni70Mn25Co5)和人造石墨片一起交替放入高温高压合成腔体内,进行高温高压实验。实验结果表明:在高温高压条件下,纳米金刚石粉不能长大,反而石墨化了;在相同的高压和保温时间条件下,随着温度的降低,纳米金刚石粉的石墨化程度减弱,纳米金刚石粉的纳米颗粒长大,可长成0.1 mm尺寸的金刚石颗粒(温度为1 070 K左右)。而在此条件下,人造石墨不能合成金刚石,一般金刚石晶体要变成石墨相。这进一步表明,纳米金刚石颗粒表面的活性使得它可以在较低的温度下长成较大颗粒的金刚石。 相似文献
6.
本文解释了La2CuO4+δ(0≤δ≤0.09)和La2-xSrxCuO4(0≤x≤0.3)两种p型系统含铜稀土氧化物中的电阻和Seebeck系数与温度的依赖关系,在室温以上,一氧大气压下的La2CuO4+δ系统趋于失氧;在500 K以上,超导样品显示出失氧的一级相变,并且恢复到反铁磁相。在转变温度T1≈300 K以下,对0<δ<0.05成份的样品,相分离成反铁磁相和超导相;而在Tcρ≈100 K的温度范围内,超导相进一步分离成富空穴和贫空穴畴。在0.04≤δ≤0.09范围内,Tc处的电阻陡降出现了台阶;我们认为,它反映了电子成对的起伏。在La2-xSrxCuO4系统中,对于成分为01≈300 K以上,空穴的运动是弥散的,但是ΔHm=0;而对于x≥0.22的样品,经历了从平滑到Fermi液态的转变。成份为0c1范围(其中空穴继续以弥散方式运动)是亚稳的,但是,在Tcρ≤150 K范围,出现了电荷起伏。当样品冷却通过T1时,对于成份为0.15≤x≤0.2的样品,经历了由弥散到强质量增强巡游电子状态的转变;在Tc处,从均匀的修饰电子的正常态凝聚成超导的载流子对。在超导成份样品的正常态中,不寻常的电子-晶格相互作用,可以归结为在CuO2面上从更离子性的到共价性的Cu:3dx2-r2─O:Pσ键合的转变;通过这种转变,轨道杂化和Hubbard U参量随Cu─O键长和Cu原子上的外表局域氧化态都产生灵敏的变化。 相似文献
7.
8.
采用纳米管制备和离子掺杂同步进行的直接水热合成方法,合成了纯钛酸盐纳米管(TNT)和Eu3+离子掺杂的纳米管(TNT-Eu);并利用X射线衍射(XRD)、透射电子显微镜(TEM)、光致发光谱仪研究了纳米管的形貌特征、物相组成、热稳定性和发光性能。结果显示:这种方法简便易行、稳定性好、产率高。钛酸盐纳米管物相可近似表示为(H,Na)2Ti3O7或(H,Na)2(Ti,Eu)3O7。高温处理对钛酸盐纳米管的结构产生很大的影响,450 ℃下纳米管的层状结构被破坏,晶体结构转化为锐钛矿型的TiO2。TNT-Eu样品的发光性能较强,出现的393.5 nm、593 nm、614 nm的谱带归属于5D0-7F1和5D0-7F2电子的跃迁。 相似文献
9.
10.
11.
A relation between a metallic film covering on diamond formed during growth and nanosized inclusions in HPHT as-grown diamond single crystals 总被引:3,自引:0,他引:3
L.-W. Yin M.-S. Li Z.-G. Gong Y.-J. Bai F.-Z. Li Z.-Y. Hao 《Applied Physics A: Materials Science & Processing》2003,76(7):1061-1065
One of the most important characteristics and basic phenomena during diamond growth from liquid metal catalyst solutions saturated
with carbon at high temperature–high pressure (HPHT) is that there exists a thin metallic film covering on the growing diamond,
through which carbon-atom clusters are delivered to the surface of the growing diamond by diffusion. A study of microstructures
of such a metallic film and a relation between the thin metallic film and the inclusions trapped in HPHT as-grown diamond
single crystals may be helpful to obtain high-purity diamond single crystals. It was found that both the metallic film and
the HPHT as-grown diamond single crystals contain some nanostructured regions. Examination by transmission electron microscopy
suggests that the microstructure of the thin metallic film is in accordance with nanosized particles contained in HPHT as-grown
diamond single crystals. The nanosized particles with several to several tens of nanometers in dimension distribute homogeneously
in the metallic film and in the diamond matrix. Generally, the size of the particles in the thin metallic film is relatively
larger than that within the diamond matrix. Selected area electron diffraction patterns suggest that the nanosized particles
in the metallic film and nanometer inclusions within the diamond are mainly composed of f.c.c. (FeNi)23C6, hexagonal graphite and cubic γ-(FeNi). The formation of the nanosized inclusions within the diamond single crystals is thought
not only to relate to the growth process and rapid quenching from high temperature after diamond synthesis, but also to be
associated with large amounts of defects in the diamond, because the free energy in these defect areas is very high. The critical
size of carbide, γ-(FeNi)and graphite particles within the diamond matrix should decrease and not increase according to thermodynamic
theory during quenching from HPHT to room temperature and ambient pressure.
Received: 13 September 2001 / Accepted: 12 June 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +86-0531/295-5081; E-mail: yinlw@sdu.edu.cn 相似文献
12.
Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy 总被引:1,自引:0,他引:1 下载免费PDF全文
High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2+ substituting Zn^2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature. 相似文献
13.
14.
15.
Effects of Al and Ti/Cu on Synthesis of Type-IIa Diamond Crystals in Ni70Mn25Co5-C System at HPHT 下载免费PDF全文
High-quality type-Ⅱa gem diamond crystals are successfully synthesized in a NiToMn25Co5-C system by temperature gradient method (TGM) at about 5.5 GPa and 1560 K. Al and Ti/Cu are used as nitrogen getters respectively. While nitrogen getter Al or Ti/Cu is added into the synthesis system, some inclusions and caves tend to be introduced into the crystals. When Al is added into the solvent alloy, we would hardly gain high-quality type-Ⅱa diamond crystals with nitrogen concentration Nc 〈 1 ppm because of the reversible reaction of Al and N at high pressure and high temperature (HPHT). Piowever, when Ti/Cu is added into the solvent alloy, high-quality type-Ⅱa diamond crystals with Nc 〈 1 ppm can be grown by decreasing the growth rate of diamonds. 相似文献
16.
Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature 下载免费PDF全文
We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development. 相似文献
17.
L.-W. Yin M.-S. Li J.-J. Cui Y.-J. Song F.-Z. Li Z.-Y. Hao 《Applied Physics A: Materials Science & Processing》2001,73(5):653-657
For understanding the mechanism of diamond growth at high temperature–high pressure (HTHP) from a metallic catalyst–graphite
system, it is of great interest to perform atomic force microscopy (AFM) experiments, which provide a unique technique different
from that of normal optical and electronic microscopy studies, to study the topography of HTHP as-grown diamond single crystals.
In the present paper, we report first AFM results on diamond single crystals grown from a Fe-Ni-C system at HTHP to reveal
the growth mechanism of diamond single crystals at HTHP. AFM images for as-grown diamond samples show dark etch pits on the
(111) surface, indicating dislocations. Some fine particles about 100–300 nm in dimension were directly observed on the (100)
diamond surface. These particles are believed to have been formed through transition of graphite to diamond under the effect
of the catalyst and to have been transported to the growing diamond surface through a metallic thin film by diffusion. The
roughness of the (100) diamond surface is found to be about several tens of nanometers through profile analysis. The diamond
growth at HTHP, in a sense, could be considered as a process of unification of these fine diamond particles or of carbon-atom-cluster
recombination on the growing diamond crystal surface. Successive growth interlayer steps on the (111) diamond surface were
systemically examined. The heights of the growth interlayer steps were measured by sectional analysis. It was shown that the
heights of the growth interlayer steps are quite different and range from about 10 to 25 nm. The source of the interlayer
steps might be dislocations. The diamond-growth mechanism at HTHP could be indicated by the AFM topography of the fine diamond
particles and the train-growth interlayer steps on the as-grown diamond surfaces.
Received: 29 March 2001 / Accepted: 20 August 2001 / Published online: 2 October 2001 相似文献